JP2012142584A5 - - Google Patents

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Publication number
JP2012142584A5
JP2012142584A5 JP2012030823A JP2012030823A JP2012142584A5 JP 2012142584 A5 JP2012142584 A5 JP 2012142584A5 JP 2012030823 A JP2012030823 A JP 2012030823A JP 2012030823 A JP2012030823 A JP 2012030823A JP 2012142584 A5 JP2012142584 A5 JP 2012142584A5
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JP
Japan
Prior art keywords
chamber
manufacturing process
gas
cathode structure
process according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012030823A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012142584A (ja
Filing date
Publication date
Priority claimed from US11/548,717 external-priority patent/US8052799B2/en
Application filed filed Critical
Publication of JP2012142584A publication Critical patent/JP2012142584A/ja
Publication of JP2012142584A5 publication Critical patent/JP2012142584A5/ja
Pending legal-status Critical Current

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JP2012030823A 2006-10-12 2012-02-15 クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置 Pending JP2012142584A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/548,717 2006-10-12
US11/548,717 US8052799B2 (en) 2006-10-12 2006-10-12 By-product collecting processes for cleaning processes

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009532592A Division JP5284969B2 (ja) 2006-10-12 2007-10-12 クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置

Publications (2)

Publication Number Publication Date
JP2012142584A JP2012142584A (ja) 2012-07-26
JP2012142584A5 true JP2012142584A5 (cg-RX-API-DMAC7.html) 2013-05-16

Family

ID=39283214

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009532592A Expired - Fee Related JP5284969B2 (ja) 2006-10-12 2007-10-12 クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置
JP2012030823A Pending JP2012142584A (ja) 2006-10-12 2012-02-15 クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2009532592A Expired - Fee Related JP5284969B2 (ja) 2006-10-12 2007-10-12 クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置

Country Status (5)

Country Link
US (1) US8052799B2 (cg-RX-API-DMAC7.html)
EP (1) EP2089169A4 (cg-RX-API-DMAC7.html)
JP (2) JP5284969B2 (cg-RX-API-DMAC7.html)
KR (1) KR101055956B1 (cg-RX-API-DMAC7.html)
WO (1) WO2008046035A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012090420A1 (ja) * 2010-12-28 2012-07-05 キヤノンアネルバ株式会社 カーボン膜の製造方法及びプラズマｃｖｄ方法
SG11201607719TA (en) * 2014-04-01 2016-11-29 Ev Group E Thallner Gmbh Method and device for the surface treatment of substrates
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10168626B2 (en) * 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield

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US3617459A (en) * 1967-09-15 1971-11-02 Ibm Rf sputtering method and apparatus for producing insulating films of varied physical properties
JPS601952B2 (ja) * 1980-01-25 1985-01-18 三菱電機株式会社 プラズマエツチング装置
US4357203A (en) * 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide
JPS632325A (ja) * 1986-06-20 1988-01-07 Fujitsu Ltd リアクテイブイオンエツチツング装置
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US4985372A (en) * 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JPH04259218A (ja) * 1991-02-14 1992-09-14 Matsushita Electric Ind Co Ltd 配線基板の表面処理方法
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process
JPH08124864A (ja) * 1994-10-28 1996-05-17 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH0983111A (ja) * 1995-09-13 1997-03-28 Hitachi Chem Co Ltd 半導体搭載用配線板の製造法
US5660682A (en) * 1996-03-14 1997-08-26 Lsi Logic Corporation Plasma clean with hydrogen gas
US6071372A (en) * 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6547934B2 (en) * 1998-05-18 2003-04-15 Applied Materials, Inc. Reduction of metal oxide in a dual frequency etch chamber
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
JP3675407B2 (ja) * 2001-06-06 2005-07-27 株式会社デンソー 電子装置
JP3989286B2 (ja) * 2002-04-26 2007-10-10 株式会社ルネサステクノロジ 半導体装置の製造方法
US20040045577A1 (en) * 2002-09-10 2004-03-11 Bing Ji Cleaning of processing chambers with dilute NF3 plasmas
JP2005032750A (ja) * 2003-07-07 2005-02-03 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
JP2005150399A (ja) * 2003-11-14 2005-06-09 Fuji Electric Holdings Co Ltd 半導体装置の製造方法
US7291550B2 (en) * 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US20050189075A1 (en) * 2004-02-27 2005-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean chamber with wafer heating apparatus and method of use
KR100735938B1 (ko) 2004-04-09 2007-07-06 동경 엘렉트론 주식회사 Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체
KR100712529B1 (ko) * 2005-09-02 2007-04-30 삼성전자주식회사 플라즈마 어플리케이터의 인시츄 세정 방법 및 그 세정방법을 채용한 플라즈마 어플리케이터

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