JP2012140620A5 - - Google Patents
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- Publication number
- JP2012140620A5 JP2012140620A5 JP2011287304A JP2011287304A JP2012140620A5 JP 2012140620 A5 JP2012140620 A5 JP 2012140620A5 JP 2011287304 A JP2011287304 A JP 2011287304A JP 2011287304 A JP2011287304 A JP 2011287304A JP 2012140620 A5 JP2012140620 A5 JP 2012140620A5
- Authority
- JP
- Japan
- Prior art keywords
- fluoroalkyl
- alkyl
- combination
- polymer unit
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 2
- 125000002733 (C1-C6) fluoroalkyl group Chemical group 0.000 claims 2
- 229920001577 copolymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical group FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- -1 olefin ester Chemical class 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201061429009P | 2010-12-31 | 2010-12-31 | |
| US61/429,009 | 2010-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012140620A JP2012140620A (ja) | 2012-07-26 |
| JP2012140620A5 true JP2012140620A5 (enExample) | 2012-12-20 |
| JP5941280B2 JP5941280B2 (ja) | 2016-06-29 |
Family
ID=45491311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011287304A Active JP5941280B2 (ja) | 2010-12-31 | 2011-12-28 | 重合性光酸発生剤 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8900792B2 (enExample) |
| EP (1) | EP2472323A3 (enExample) |
| JP (1) | JP5941280B2 (enExample) |
| KR (1) | KR101428023B1 (enExample) |
| CN (1) | CN102603579B (enExample) |
| TW (1) | TWI506013B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2472322A2 (en) * | 2010-12-31 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Photoacid generating monomer and precursor thereof |
| EP2472323A3 (en) | 2010-12-31 | 2013-01-16 | Rohm and Haas Electronic Materials LLC | Polymerizable photoacid generators |
| JP5978137B2 (ja) * | 2012-02-23 | 2016-08-24 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
| JP6297269B2 (ja) * | 2012-06-28 | 2018-03-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品 |
| JP6031420B2 (ja) * | 2012-08-31 | 2016-11-24 | ダウ グローバル テクノロジーズ エルエルシー | 光酸発生剤を含む末端基を含むポリマー、前記ポリマーを含むフォトレジストおよびデバイスの製造方法 |
| US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
| US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
| US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
| US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
| US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| JP5812030B2 (ja) * | 2013-03-13 | 2015-11-11 | 信越化学工業株式会社 | スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法 |
| US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
| JP6093614B2 (ja) * | 2013-03-25 | 2017-03-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
| US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| US9581901B2 (en) * | 2013-12-19 | 2017-02-28 | Rohm And Haas Electronic Materials Llc | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device |
| US9182669B2 (en) * | 2013-12-19 | 2015-11-10 | Rohm And Haas Electronic Materials Llc | Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device |
| US9229319B2 (en) | 2013-12-19 | 2016-01-05 | Rohm And Haas Electronic Materials Llc | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device |
| US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
| KR20150086050A (ko) * | 2014-01-17 | 2015-07-27 | 동우 화인켐 주식회사 | 신규의 설포닐이미드 염화합물, 이의 제조 방법 및 이를 포함하는 광산 발생제 및 감광성 수지 조성물 |
| DE112015000546T5 (de) * | 2014-02-25 | 2016-11-10 | Tokyo Electron Limited | Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists |
| US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
| US9244345B1 (en) | 2014-11-06 | 2016-01-26 | International Business Machines Corporation | Non-ionic photo-acid generating polymers for resist applications |
| US11613519B2 (en) | 2016-02-29 | 2023-03-28 | Rohm And Haas Electronic Materials Llc | Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition |
| JP6780602B2 (ja) * | 2017-07-31 | 2020-11-04 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP7410943B2 (ja) | 2018-11-02 | 2024-01-10 | ブルーワー サイエンス アイ エヌ シー． | Ｐａｇが固定された表面上でのボトムアップ絶縁保護コーティングおよびフォトパターニング |
| JP7226095B2 (ja) * | 2019-05-24 | 2023-02-21 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物、及びパターン形成方法 |
| CN114262404B (zh) * | 2020-09-16 | 2023-06-30 | 宁波南大光电材料有限公司 | 光敏树脂及应用该光敏树脂的光刻胶组合物 |
| WO2022056700A1 (zh) * | 2020-09-16 | 2022-03-24 | 宁波南大光电材料有限公司 | 光敏树脂及应用该光敏树脂的光刻胶组合物 |
| CN113173870A (zh) * | 2021-03-18 | 2021-07-27 | 河北凯诺中星科技有限公司 | 一种樟脑磺酸对苯碘鎓盐的制备方法 |
| US12393118B2 (en) * | 2021-05-28 | 2025-08-19 | Dupont Electronic Materials International, Llc | Composition for photoresist underlayer |
| JP2023145385A (ja) * | 2022-03-28 | 2023-10-11 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2964557A (en) | 1958-03-13 | 1960-12-13 | Rohm & Haas | Method for preparing salts of sulfoalkyl methacrylates |
| JPS4936214B1 (enExample) | 1970-01-28 | 1974-09-28 | ||
| JP3613491B2 (ja) | 1996-06-04 | 2005-01-26 | 富士写真フイルム株式会社 | 感光性組成物 |
| US7008749B2 (en) * | 2001-03-12 | 2006-03-07 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
| US7833690B2 (en) | 2001-11-05 | 2010-11-16 | The University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
| JP2006219419A (ja) | 2005-02-10 | 2006-08-24 | Asahi Kasei Corp | パーフルオロビニルエーテルモノマーの製造法 |
| EP1750176A3 (en) * | 2005-08-03 | 2011-04-20 | JSR Corporation | Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material |
| TWI416253B (zh) | 2006-11-10 | 2013-11-21 | Jsr Corp | 敏輻射線性樹脂組成物 |
| WO2008056795A1 (en) * | 2006-11-10 | 2008-05-15 | Jsr Corporation | Polymerizable sulfonic acid onium salt and resin |
| US7776510B2 (en) | 2007-06-13 | 2010-08-17 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition, method of forming resist pattern, compound and acid generator |
| JP5066405B2 (ja) | 2007-08-02 | 2012-11-07 | 富士フイルム株式会社 | 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法 |
| WO2009019793A1 (ja) * | 2007-08-09 | 2009-02-12 | Jsr Corporation | パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂 |
| JP5347349B2 (ja) * | 2007-09-18 | 2013-11-20 | セントラル硝子株式会社 | ２−ブロモ−２，２−ジフルオロエタノール及び２−（アルキルカルボニルオキシ）−１，１−ジフルオロエタンスルホン酸塩類の製造方法 |
| JP5131482B2 (ja) | 2008-02-13 | 2013-01-30 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| JP4998746B2 (ja) * | 2008-04-24 | 2012-08-15 | 信越化学工業株式会社 | スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法 |
| WO2009152276A2 (en) * | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
| JP5313579B2 (ja) | 2008-07-24 | 2013-10-09 | 関東電化工業株式会社 | 新規なフッ素化された１，２−オキサチオラン２，２−ジオキシドの製造方法 |
| JP5481046B2 (ja) | 2008-08-13 | 2014-04-23 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
| JP5841707B2 (ja) * | 2008-09-05 | 2016-01-13 | 富士フイルム株式会社 | ポジ型レジスト組成物、該組成物を用いたパターン形成方法及び該組成物に用いられる樹脂 |
| JP5401910B2 (ja) * | 2008-10-17 | 2014-01-29 | セントラル硝子株式会社 | 重合性アニオンを有する含フッ素スルホン塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法 |
| JP5417150B2 (ja) * | 2008-12-18 | 2014-02-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、それを用いたパターン形成方法、及び樹脂 |
| TWI485511B (zh) * | 2009-03-27 | 2015-05-21 | Jsr Corp | 敏輻射線性樹脂組成物及聚合物 |
| JP5851688B2 (ja) * | 2009-12-31 | 2016-02-03 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 感光性組成物 |
| JP5597460B2 (ja) * | 2010-01-05 | 2014-10-01 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物 |
| EP2472323A3 (en) | 2010-12-31 | 2013-01-16 | Rohm and Haas Electronic Materials LLC | Polymerizable photoacid generators |
-
2011
- 2011-12-23 EP EP11195707A patent/EP2472323A3/en not_active Withdrawn
- 2011-12-28 JP JP2011287304A patent/JP5941280B2/ja active Active
- 2011-12-29 US US13/339,948 patent/US8900792B2/en active Active
- 2011-12-29 TW TW100149500A patent/TWI506013B/zh active
- 2011-12-30 KR KR1020110147342A patent/KR101428023B1/ko active Active
- 2011-12-31 CN CN201110463334.9A patent/CN102603579B/zh active Active
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