JP2012119512A - 基板の品質評価方法及びその装置 - Google Patents

基板の品質評価方法及びその装置 Download PDF

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Publication number
JP2012119512A
JP2012119512A JP2010268339A JP2010268339A JP2012119512A JP 2012119512 A JP2012119512 A JP 2012119512A JP 2010268339 A JP2010268339 A JP 2010268339A JP 2010268339 A JP2010268339 A JP 2010268339A JP 2012119512 A JP2012119512 A JP 2012119512A
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JP
Japan
Prior art keywords
substrate
image
light
quality evaluation
quality
Prior art date
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Pending
Application number
JP2010268339A
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English (en)
Japanese (ja)
Inventor
Kaoru Sakai
薫 酒井
Shigenobu Maruyama
重信 丸山
Yasuhiro Yoshitake
康裕 吉武
Kiyomi Yamaguchi
清美 山口
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010268339A priority Critical patent/JP2012119512A/ja
Priority to TW100140415A priority patent/TW201229493A/zh
Priority to KR1020110126910A priority patent/KR101295463B1/ko
Priority to CN2011103937328A priority patent/CN102543789A/zh
Publication of JP2012119512A publication Critical patent/JP2012119512A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Textile Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Recrystallisation Techniques (AREA)
JP2010268339A 2010-12-01 2010-12-01 基板の品質評価方法及びその装置 Pending JP2012119512A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010268339A JP2012119512A (ja) 2010-12-01 2010-12-01 基板の品質評価方法及びその装置
TW100140415A TW201229493A (en) 2010-12-01 2011-11-04 Substrate quality assessment method and apparatus thereof
KR1020110126910A KR101295463B1 (ko) 2010-12-01 2011-11-30 기판의 품질 평가 방법 및 그 장치
CN2011103937328A CN102543789A (zh) 2010-12-01 2011-12-01 基板的品质评价方法及其装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010268339A JP2012119512A (ja) 2010-12-01 2010-12-01 基板の品質評価方法及びその装置

Publications (1)

Publication Number Publication Date
JP2012119512A true JP2012119512A (ja) 2012-06-21

Family

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Family Applications (1)

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JP2010268339A Pending JP2012119512A (ja) 2010-12-01 2010-12-01 基板の品質評価方法及びその装置

Country Status (4)

Country Link
JP (1) JP2012119512A (ko)
KR (1) KR101295463B1 (ko)
CN (1) CN102543789A (ko)
TW (1) TW201229493A (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018154A (zh) * 2012-12-05 2013-04-03 中国电子科技集团公司第四十五研究所 一种遍历晶粒不规则区域的多区域图像检测方法
JP2015219143A (ja) * 2014-05-19 2015-12-07 コニカミノルタ株式会社 光デバイス検査装置および光デバイス検査方法
WO2018135040A1 (ja) * 2017-01-18 2018-07-26 株式会社東芝 物流管理装置、物流管理方法、およびプログラム
CN108519266A (zh) * 2018-04-16 2018-09-11 江苏美科硅能源有限公司 一种全熔高效硅锭的分级方法
CN111512424A (zh) * 2017-12-25 2020-08-07 环球晶圆日本股份有限公司 硅晶片的评价方法
WO2022168157A1 (ja) * 2021-02-02 2022-08-11 国立大学法人九州大学 機械学習方法、レーザアニールシステム、及びレーザアニール方法
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
CN116337879A (zh) * 2023-05-23 2023-06-27 青岛豪迈电缆集团有限公司 一种电缆绝缘表皮磨损缺陷快速检测方法

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KR20140101612A (ko) 2013-02-12 2014-08-20 삼성디스플레이 주식회사 결정화 검사장치 및 결정화 검사방법
KR20180085067A (ko) * 2013-02-19 2018-07-25 아사히 가라스 가부시키가이샤 광학 장치
CN105738379B (zh) * 2014-12-12 2018-10-19 上海和辉光电有限公司 一种多晶硅薄膜的检测装置及检测方法
CN105785604A (zh) * 2014-12-24 2016-07-20 台湾动力检测科技股份有限公司 显示设备的光学层件的缺陷检测方法
KR102250032B1 (ko) * 2014-12-29 2021-05-12 삼성디스플레이 주식회사 표시 장치의 검사 장치 및 표시 장치의 검사 방법
JP6424143B2 (ja) * 2015-04-17 2018-11-14 株式会社ニューフレアテクノロジー 検査方法およびテンプレート
KR101877274B1 (ko) * 2015-05-29 2018-07-12 에이피시스템 주식회사 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법
US9784570B2 (en) * 2015-06-15 2017-10-10 Ultratech, Inc. Polarization-based coherent gradient sensing systems and methods
EP3373327A4 (en) * 2015-11-05 2019-06-19 Mipox Corporation METHOD FOR EVALUATING A SUBSTRATE USING POLARIZED PARALLEL LIGHT
KR101862312B1 (ko) * 2016-01-13 2018-05-29 에이피시스템 주식회사 처리물 분석 장치 및 이를 포함하는 가공 장치, 처리물 분석 방법
US20200321363A1 (en) * 2016-05-11 2020-10-08 Ipg Photonics Corporation Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
TWI612293B (zh) 2016-11-18 2018-01-21 財團法人工業技術研究院 Ｌｔｐｓ背板結晶品質檢測裝置及其方法
CN107677686B (zh) * 2017-09-28 2021-01-26 京东方科技集团股份有限公司 光线透过窗集成装置及采用该装置的设备
CN113056742B (zh) * 2018-11-06 2022-06-07 三菱电机株式会社 设计辅助装置、设计辅助方法及机器学习装置
WO2023215046A1 (en) * 2022-05-03 2023-11-09 Veeco Instruments Inc. Scatter melt detection systems and methods of using the same

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JP3483948B2 (ja) * 1994-09-01 2004-01-06 オリンパス株式会社 欠陥検出装置
JPH08226900A (ja) * 1995-10-25 1996-09-03 Canon Inc 表面状態検査方法
KR100374762B1 (ko) * 1998-07-28 2003-03-04 히다치 덴시 엔지니어링 가부시키 가이샤 결함 검사 장치 및 그 방법
CN1397089A (zh) * 2000-02-15 2003-02-12 松下电器产业株式会社 非单晶薄膜、带非单晶薄膜的衬底、其制造方法及其制造装置、以及其检查方法及其检查装置、以及利用该非单晶薄膜的薄膜晶体管、薄膜晶体管阵列及图像显示装置
TWI254792B (en) * 2003-07-01 2006-05-11 Au Optronics Corp Detecting method and device of laser crystalline silicon
JP4537131B2 (ja) 2004-06-30 2010-09-01 友達光電股▲ふん▼有限公司 レーザー結晶シリコンの検査方法及びその装置
JP4869129B2 (ja) * 2007-03-30 2012-02-08 Ｈｏｙａ株式会社 パターン欠陥検査方法
CN102396058B (zh) * 2009-02-13 2014-08-20 恪纳腾公司 检测晶片上的缺陷

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018154A (zh) * 2012-12-05 2013-04-03 中国电子科技集团公司第四十五研究所 一种遍历晶粒不规则区域的多区域图像检测方法
JP2015219143A (ja) * 2014-05-19 2015-12-07 コニカミノルタ株式会社 光デバイス検査装置および光デバイス検査方法
WO2018135040A1 (ja) * 2017-01-18 2018-07-26 株式会社東芝 物流管理装置、物流管理方法、およびプログラム
JP2018116482A (ja) * 2017-01-18 2018-07-26 株式会社東芝 物流管理装置、物流管理方法、およびプログラム
CN111512424A (zh) * 2017-12-25 2020-08-07 环球晶圆日本股份有限公司 硅晶片的评价方法
CN108519266A (zh) * 2018-04-16 2018-09-11 江苏美科硅能源有限公司 一种全熔高效硅锭的分级方法
WO2022168157A1 (ja) * 2021-02-02 2022-08-11 国立大学法人九州大学 機械学習方法、レーザアニールシステム、及びレーザアニール方法
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
CN116337879A (zh) * 2023-05-23 2023-06-27 青岛豪迈电缆集团有限公司 一种电缆绝缘表皮磨损缺陷快速检测方法
CN116337879B (zh) * 2023-05-23 2023-08-04 青岛豪迈电缆集团有限公司 一种电缆绝缘表皮磨损缺陷快速检测方法

Also Published As

Publication number Publication date
CN102543789A (zh) 2012-07-04
KR101295463B1 (ko) 2013-08-16
KR20120060162A (ko) 2012-06-11
TW201229493A (en) 2012-07-16

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