JP2012104801A - GaNベースの薄膜トランジスタの製造方法 - Google Patents
GaNベースの薄膜トランジスタの製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 16
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- 239000010408 film Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 15
- -1 fluorine ions Chemical class 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910003855 HfAlO Inorganic materials 0.000 claims description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 47
- 238000010586 diagram Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000001459 lithography Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
【解決手段】GaNベースの薄膜トランジスタの製造方法は、n型GaNベースの半導体材を有する半導体エピタキシャル層を、基板上に形成する工程と、半導体エピタキシャル層上に絶縁体層を形成する工程と、絶縁体層上に、絶縁体層を部分的に露出するための開口部を有しているイオン注入マスクを形成する工程と、p型不純物を、開口部および絶縁体層を通してイオン注入して、n型GaNベースの半導体材の中にp型不純物がドーピングされた領域を形成し、その後、絶縁体層およびイオン注入マスクを除去する工程と、半導体エピタキシャル層上に誘電体層を形成する工程と、誘電体層を部分的に除去する工程と、ソース電極およびドレイン電極を形成する工程と、ゲート電極を形成する工程を含む。
【選択図】図2
Description
n型GaNベースの半導体材を有する半導体エピタキシャル層を、基板上に形成する工程と、
半導体エピタキシャル層上に絶縁体層を形成する工程と、
絶縁体層上に、絶縁体層を部分的に露出するための開口部を有しているイオン注入マスクを形成する工程と、
p型不純物を、開口部および絶縁体層を通してイオン注入して、n型GaNベースの半導体材の中にp型不純物がドーピングされた領域を形成し、その後、絶縁体層およびイオン注入マスクを除去する工程と、
半導体エピタキシャル層上に誘電体層を形成する工程と、
p型不純物がドーピングされた領域の両端に位置している半導体エピタキシャル層の2つの部分が、誘電体層から露出するように、誘電体層を部分的に除去する工程と、
半導体エピタキシャル層の2つの部分上に、それぞれ、ソース電極およびドレイン電極を形成する工程と、
誘電体層の残存部分上にゲート電極を形成する工程と、
を備えたこと、を特徴とする、GaNベースの薄膜トランジスタの製造方法である。
21 基板
22 半導体エピタキシャル層
221 第1GaNエピタキシャル膜
222 AlGaNエピタキシャル膜
223 第2GaNエピタキシャル膜
224 p型不純物がドーピングされた領域
225 絶縁体層
225a イオン注入マスク
226 開口部
241 ソース電極
242 ドレイン電極
243 ゲート電極
Claims (7)
- n型GaNベースの半導体材を有する半導体エピタキシャル層(22)を、基板(21)上に形成する工程と、
前記半導体エピタキシャル層(22)上に絶縁体層(225)を形成する工程と、
前記絶縁体層(225)上に、前記絶縁体層(225)を部分的に露出するための開口部(226)を有しているイオン注入マスク(225a)を形成する工程と、
p型不純物を、前記開口部(226)および前記前記絶縁体層(225)を通してイオン注入して、前記n型GaNベースの半導体材の中にp型不純物がドーピングされた領域(224)を形成し、その後、前記絶縁体層(225)および前記イオン注入マスク(225a)を除去する工程と、
前記半導体エピタキシャル層(22)上に誘電体層(23)を形成する工程と、
前記p型不純物がドーピングされた領域(224)の両端に位置している前記半導体エピタキシャル層(22)の2つの部分が、前記誘電体層(23)から露出するように、前記誘電体層(23)を部分的に除去する工程と、
前記半導体エピタキシャル層(22)の前記2つの部分上に、それぞれ、ソース電極(241)およびドレイン電極(242)を形成する工程と、
前記誘電体層(23)の残存部分上にゲート電極(243)を形成する工程と、
を備えたこと、を特徴とする、GaNベースの薄膜トランジスタ(2)の製造方法。 - 前記半導体エピタキシャル層(22)は、下から上に、前記基板(21)上に形成された第1GaNエピタキシャル膜(221)、AlGaNエピタキシャル膜(222)、および、第2GaNエピタキシャル膜(223)を含んでいること、を特徴とする、請求項1に記載のGaNベースの薄膜トランジスタの製造方法。
- 前記絶縁体層(225)は、前記p型不純物がドーピングされた領域(224)の深さを制限するように調整された厚さを有し、その結果、前記p型不純物がドーピングされた領域(224)は、前記第2GaNエピタキシャル膜(223)の中にだけ形成されていること、を特徴とする、請求項2に記載のGaNベースの薄膜トランジスタの製造方法。
- 前記p型不純物がドーピングされた領域(224)は、前記第2GaNエピタキシャル膜(223)の厚みの半分未満の厚みを有していること、を特徴とする、請求項3に記載のGaNベースの薄膜トランジスタの製造方法。
- 前記イオン注入の工程の前に、プラズマ処理によって、前記開口部(226)を通して前記AlGaNエピタキシャル膜(222)に、フッ素イオンを取り入れる工程を、さらに備えたこと、を特徴とする、請求項2に記載のGaNベースの薄膜トランジスタの製造方法。
- 前記絶縁体層(225)は、二酸化珪素および窒化珪素のいずれか1つからなり、50nm〜150nmの厚みを有していること、を特徴とする、請求項3に記載のGaNベースの薄膜トランジスタの製造方法。
- 前記誘電体層(23)は、Al2O3、HfO2、La2O3、CeO2、HfAlO、TiO2およびZrO2からなる群から選択された材料からなること、を特徴とする、請求項1に記載のGaNベースの薄膜トランジスタの製造方法。
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FR2998709B1 (fr) * | 2012-11-26 | 2015-01-16 | Commissariat Energie Atomique | Procede de fabrication d'un transistor a heterojonction de type normalement bloque |
US10164038B2 (en) * | 2013-01-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of implanting dopants into a group III-nitride structure and device formed |
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JP5645766B2 (ja) | 2014-12-24 |
US8420421B2 (en) | 2013-04-16 |
US20120122281A1 (en) | 2012-05-17 |
TW201220405A (en) | 2012-05-16 |
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