JP2012089793A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2012089793A JP2012089793A JP2010237484A JP2010237484A JP2012089793A JP 2012089793 A JP2012089793 A JP 2012089793A JP 2010237484 A JP2010237484 A JP 2010237484A JP 2010237484 A JP2010237484 A JP 2010237484A JP 2012089793 A JP2012089793 A JP 2012089793A
- Authority
- JP
- Japan
- Prior art keywords
- voltage side
- low
- electrode
- source
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 230000005669 field effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- -1 gallium arsenide compound Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】高電圧側電界効果トランジスタ20aの高電圧側ドレイン電極11aと、高電圧側ドレイン電極11aの一側方に間隔をおいて形成される高電圧側ゲート電極12aと、高電圧側ゲート電極12aの一側方に間隔をおいて形成され、高電圧側電界効果トランジスタ20aのソース電極であり、低電圧側電界効果トランジスタ21aのドレイン電極であるソース兼ドレイン電極13aと、ソース兼ドレイン電極13aの一側方に間隔をおいて形成される低電圧側電界効果トランジスタ21aの低電圧側ゲート電極14aと、低電圧側ゲート電極14aの一側方に間隔をおいて形成される低電圧側電界効果トランジスタ21aの低電圧側ソース電極15aとを有する。
【選択図】図1
Description
図1は、本発明の実施形態に係る半導体装置を示す平面図、図2A〜図2Cは、それぞれ図1のI−I線、II−II線、III-III 線に沿った断面図である。
3において、電子供給層4との境界領域には自発分極とピエゾ分極により二次元電子ガス2DEGが発生する。なお、バッファ層2として例えばAlN/GaN層又はAlGaN層が形成される。
ストライプ形状を有し、それらの幅は例えば約0.5μmである。また、第1、第2高電圧側ドレイン電極11a、11b、第1、第2ソース/ドレイン電極13a、13b、低電圧側ソース電極15a〜15c、低電圧側ドレイン電極16a、16bは、ストライプ形状を有し、それらの幅は例えば約1μm〜2μmである。
配線18に近い領域には、低電圧側ソース電極15a、15b、15cのそれぞれの上面に達する複数の第3のビアホール19cが形成されている。
な回路構成を有している。その回路において、第2の高電圧側HEMT20bは、第2のソース/ドレイン電極13b、出力用配線24を介して3つの低電圧側HEMT21d〜21fに対して直列に接続される。また、それら3つの低電圧側HEMT21d〜21fは、低電圧側ソース電極15b、15c、低電圧側ドレイン電極16b、出力用配線24及び接地用配線25を介して互いに並列に接続される。
いるが、ガリウム砒素系化合物半導体、或いはインジウム砒素系化合物半導体、或いはインジウム・ガリウム砒素系化合物半導体により形成してもよい。
2 バッファ層
3 チャネル層
4 電子供給層
5 誘電体層
10a、10b バックレギュレータ回路
11a、11b 高電圧側ドレイン電極
12a、12b 高電圧側ゲート電極
13a、13b ソース兼ドレイン電極
14a〜14f 低電圧側ゲート電極
15a〜15c 低電圧側ソース電極
16a、16b 低電圧側ドレイン電極
17 高電圧側ゲート配線
18 低電圧側ゲート配線
19 絶縁層
19a〜19d ビアホール
20a、20b 高電圧側HEMT
21a〜21f、26a、26b 低電圧側HEMT
23、23a〜23c 電圧印加用配線23
24、24a、24b 出力用配線
25、25a、25b 接地用配線
Claims (9)
- 高電圧側電界効果トランジスタと低圧側電界効果トランジスタを有する半導体装置において、
前記高電圧側電界効果トランジスタの高電圧側ドレイン電極と、
前記高電圧側ドレイン電極の一側方に間隔をおいて形成される高電圧側ゲート電極と、
前記高電圧側ゲート電極の一側方に間隔をおいて形成され、前記高電圧側電界効果トランジスタのソース電極であり、前記低電圧側電界効果トランジスタのドレイン電極であるソース兼ドレイン電極と、
前記ソース兼ドレイン電極の一側方に間隔をおいて形成される前記低電圧側電界効果トランジスタの第1の低電圧側ゲート電極と、
前記第1の低電圧側ゲート電極の一側方に間隔をおいて形成される前記低電圧側電界効果トランジスタの第1の低電圧側ソース電極と、
を有する半導体装置。 - 半導体層を有し、前記高電圧側ドレイン電極、前記高電圧側ゲート電極、前記ソース兼ドレイン電極、前記低電圧側電界効果トランジスタの前記第1の低電圧側ゲート電極、及び、前記低電圧側電界効果トランジスタの前記第1の低電圧側ソース電極は前記半導体層の上に形成され、
前記半導体層上で、前記第1の低電圧側ソース電極の一側方に間隔を置いて形成される第2の低電圧側ゲート電極と、
前記半導体層上で、前記第2の低電圧側ゲート電極の一側方に間隔をおいて形成される低電圧側ドレイン電極と、
前記第1、第2の低電圧側ゲート電極、前記低電圧側ドレイン電極、前記第1の低電圧側ソース電極、前記ソース兼ドレイン電極、前記高電圧側ゲート電極、前記高電圧側ドレイン電極及び前記半導体層の上に形成される絶縁層と、
前記絶縁層のうち前記低電圧側ドレイン電極及び前記ソース兼ドレイン電極の上にそれぞれ形成される第1のホールと、
前記絶縁層上に形成されて前記第1のホールを通して前記低電圧側ドレイン電極と前記ソース兼ドレイン電極に接続される配線と、
を有することを特徴とする請求項1に記載の半導体装置。 - 前記半導体層上で、前記低電圧側ドレイン電極の一側方に間隔をおいて形成される第3の低電圧側ゲート電極と、
前記第3の低電圧側ゲート電極の一側方に間隔をおいて形成される第2の低電圧側ソース電極と、
前記絶縁層のうち前記第1、第2の低電圧側ソース電極のそれぞれの上に形成される複数の第2のホールと、
前記絶縁層の上に形成され、前記第2のホールを通して前記第1、第2の低電圧側ソース電極に接続される第2の配線と、
を有することを特徴とする請求項2に記載の半導体装置。 - 前記ドレイン電極、前記第3の低電圧側ゲート電極、前記第2の低電圧側ソース電極が形成される領域は前記一側方に線対称にさらに少なくとも1つ形成され、
前記半導体層上には、前記高電圧側ゲート電極に対して最も離れた前記第2の低電圧ソース電極を中心にして、前記第2の低電圧ソース電極から前記高電圧側ドレイン電極までが線対称に形成される回路をさらに有する特徴とする請求項3に記載の半導体装置。 - 前記半導体層上には、前記高電圧ドレイン電極を中心にして、前記高電圧側ドレイン電極から前記第2の低電圧ソース電極までが線対称に形成された回路をさらに有することを
特徴とする請求項3に記載の半導体装置。 - 前記半導体層は、チャネル層上に電子供給層を形成した積層構造を有することを特徴とする請求項1乃至請求項5のいずれか1項に記載の半導体装置。
- 前記高電圧側ソース電極、前記ソース兼ドレイン電極、前記低電圧側ドレイン電極及び前記第1の低電圧側ソース電極は、前記半導体層にオーミック接触することを特徴とする請求項1乃至請求項6のいずれか1項に記載の半導体装置。
- 前記高電圧側ゲート電極、前記第1の低電圧側ゲート電極は誘電体層を介して前記半導体層上に形成されることを特徴とする請求項1乃至請求項7のいずれか1項に記載の半導体装置。
- 前記高電圧側ゲート電極、前記第1の低電圧側ゲート電極は前記半導体層にショットキー接触することを特徴とする請求項1乃至請求項7のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010237484A JP5584090B2 (ja) | 2010-10-22 | 2010-10-22 | Dc−dcコンバータ |
US13/161,377 US8530996B2 (en) | 2010-10-22 | 2011-06-15 | Buck regulator structure comprising high-side and low-side voltage HEMT transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010237484A JP5584090B2 (ja) | 2010-10-22 | 2010-10-22 | Dc−dcコンバータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012089793A true JP2012089793A (ja) | 2012-05-10 |
JP5584090B2 JP5584090B2 (ja) | 2014-09-03 |
Family
ID=45972256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010237484A Expired - Fee Related JP5584090B2 (ja) | 2010-10-22 | 2010-10-22 | Dc−dcコンバータ |
Country Status (2)
Country | Link |
---|---|
US (1) | US8530996B2 (ja) |
JP (1) | JP5584090B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014188651A1 (ja) * | 2013-05-20 | 2014-11-27 | パナソニックIpマネジメント株式会社 | 半導体装置 |
WO2022244700A1 (ja) * | 2021-05-17 | 2022-11-24 | 株式会社村田製作所 | 半導体装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107785361B (zh) * | 2016-08-26 | 2020-06-30 | 台达电子企业管理(上海)有限公司 | 功率集成模块 |
US10629550B2 (en) * | 2012-10-31 | 2020-04-21 | Delta Electronics (Shanghai) Co., Ltd | Power integrated module |
US9646965B2 (en) | 2014-01-30 | 2017-05-09 | Texas Instruments Incorporated | Monolithically integrated transistors for a buck converter using source down MOSFET |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
US10756084B2 (en) * | 2015-03-26 | 2020-08-25 | Wen-Jang Jiang | Group-III nitride semiconductor device and method for fabricating the same |
US9818854B2 (en) * | 2015-04-30 | 2017-11-14 | Semiconductor Components Industries, Llc | Electronic device including a bidirectional HEMT |
FR3036897B1 (fr) | 2015-05-29 | 2018-06-15 | Wupatec | Bloc convertisseur continu-continu, convertisseur continu-continu le comprenant et systeme de suivi d'enveloppe associe |
US9484908B1 (en) | 2015-06-19 | 2016-11-01 | Hella Corporate Center Usa, Inc. | Gate drive circuit |
US10630285B1 (en) | 2017-11-21 | 2020-04-21 | Transphorm Technology, Inc. | Switching circuits having drain connected ferrite beads |
US10756207B2 (en) | 2018-10-12 | 2020-08-25 | Transphorm Technology, Inc. | Lateral III-nitride devices including a vertical gate module |
WO2020191357A1 (en) | 2019-03-21 | 2020-09-24 | Transphorm Technology, Inc. | Integrated design for iii-nitride devices |
US11749656B2 (en) | 2020-06-16 | 2023-09-05 | Transphorm Technology, Inc. | Module configurations for integrated III-Nitride devices |
CN116325158A (zh) | 2020-08-05 | 2023-06-23 | 创世舫科技有限公司 | 包含耗尽层的iii族氮化物器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152038A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | GaAsゲ−トアレイ集積回路 |
JPS61144843A (ja) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | 半導体集積回路装置 |
JP2005310839A (ja) * | 2004-04-16 | 2005-11-04 | Toshiba Corp | 半導体装置 |
JP2007194411A (ja) * | 2006-01-19 | 2007-08-02 | Sanyo Electric Co Ltd | スイッチ集積回路装置およびその製造方法 |
JPWO2008062800A1 (ja) * | 2006-11-20 | 2010-03-04 | パナソニック株式会社 | 半導体装置及びその駆動方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
JP4212551B2 (ja) | 2003-12-18 | 2009-01-21 | 株式会社東芝 | 半導体集積回路装置 |
KR100517822B1 (ko) * | 2003-12-26 | 2005-09-30 | 한국전자통신연구원 | 전계효과 트랜지스터의 제조 방법 |
JP2006049341A (ja) | 2004-07-30 | 2006-02-16 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7863877B2 (en) | 2006-12-11 | 2011-01-04 | International Rectifier Corporation | Monolithically integrated III-nitride power converter |
JP2009170747A (ja) | 2008-01-18 | 2009-07-30 | Toshiba Corp | 半導体装置及びその製造方法 |
US20100059795A1 (en) * | 2008-09-08 | 2010-03-11 | Firas Azrai | Vertical current transport in a power converter circuit |
-
2010
- 2010-10-22 JP JP2010237484A patent/JP5584090B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-15 US US13/161,377 patent/US8530996B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152038A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | GaAsゲ−トアレイ集積回路 |
JPS61144843A (ja) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | 半導体集積回路装置 |
JP2005310839A (ja) * | 2004-04-16 | 2005-11-04 | Toshiba Corp | 半導体装置 |
JP2007194411A (ja) * | 2006-01-19 | 2007-08-02 | Sanyo Electric Co Ltd | スイッチ集積回路装置およびその製造方法 |
JPWO2008062800A1 (ja) * | 2006-11-20 | 2010-03-04 | パナソニック株式会社 | 半導体装置及びその駆動方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014188651A1 (ja) * | 2013-05-20 | 2014-11-27 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JPWO2014188651A1 (ja) * | 2013-05-20 | 2017-02-23 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US9654001B2 (en) | 2013-05-20 | 2017-05-16 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
WO2022244700A1 (ja) * | 2021-05-17 | 2022-11-24 | 株式会社村田製作所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120098038A1 (en) | 2012-04-26 |
JP5584090B2 (ja) | 2014-09-03 |
US8530996B2 (en) | 2013-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5584090B2 (ja) | Dc−dcコンバータ | |
US10950524B2 (en) | Heterojunction semiconductor device for reducing parasitic capacitance | |
JP5608322B2 (ja) | 双方向スイッチ | |
US9654001B2 (en) | Semiconductor device | |
JP5728258B2 (ja) | 半導体装置 | |
US8536622B2 (en) | Semiconductor device and power supply apparatus | |
CA2796155C (en) | High density gallium nitride devices using island topology | |
US9691757B2 (en) | Semiconductor device including transistors and diodes and a first line extending between the transistors and diodes | |
US20160329890A1 (en) | Semiconductor device | |
US10135337B2 (en) | Semiconductor device | |
JP2006351691A (ja) | 半導体装置 | |
US20120049244A1 (en) | Semiconductor device and method of manufacturing the same, and power supply apparatus | |
US11133399B2 (en) | Semiconductor device | |
US11296601B2 (en) | Power transistor with distributed gate | |
KR102163725B1 (ko) | 반도체 소자 및 그 제조방법 | |
KR20150033553A (ko) | 반도체 장치 | |
US9324819B1 (en) | Semiconductor device | |
US20150262997A1 (en) | Switching power supply | |
US9893015B2 (en) | Semiconductor device | |
KR20150044326A (ko) | 쇼트키 배리어 다이오드가 일체화된 고전자 이동도 트랜지스터를 구비하는 반도체 소자 및 그 제조 방법 | |
US11728419B2 (en) | High electron mobility transistor | |
JP6374115B2 (ja) | 複合型半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130626 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20140428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140527 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140707 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140717 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5584090 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |