JP2012084558A - Dicing/die-bonding tape - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a dicing/die-bonding tape capable of surely splitting a die-bonding layer in an X-direction and a Y-direction even when stress expanding outward in a radial direction is applied to a dicing tape.SOLUTION: There is provided a dicing/die-bonding tape 1 in which a circular dicing tape 5 is directly or indirectly stacked on a circular die-bonding layer 3 formed from a viscous adhesive layer and a plurality of missing parts 3a are formed on or near an outer peripheral edge of the die-bonding layer 3. Each of the missing parts 3a is provided on or inside of the outer peripheral edge of the die-bonding layer 3 at a position where a third straight line intersects with the outer peripheral edge so as to suppress extension of the die-bonding layer 3 in a direction along the third straight line extending in a direction between a first straight line and a second straight line, when tensile stress expanding outward in a radial direction is applied to the dicing tape in a direction parallel to the first straight line passing through the center of the dicing tape 5 and when tensile stress expanding outward in a radial direction is applied to the dicing tape in a direction parallel to the second straight line orthogonal to the first straight line and passing through the center of the dicing tape 5.

Description

  The present invention relates to a dicing die bonding tape used for picking up individual semiconductor chips together with a die bonding layer from a semiconductor wafer, and more particularly, a die bonding layer laminated on a dicing tape by expanding the dicing tape. The present invention relates to a dicing die bonding tape for dividing a die bonding layer into pieces by splitting.

  As a method for cutting a semiconductor chip from a semiconductor wafer, a dicing method called a first dicing method is used. For example, Patent Document 1 below discloses an example of a prior dicing method.

  In the tip dicing method described in Patent Document 1, first, a cut is formed from one surface of a circular semiconductor wafer. This cut is formed so as to extend in the X direction, which is an arbitrary direction in the plane of the semiconductor wafer, and in the Y direction, which is a direction orthogonal to the X direction. Next, a protective sheet is affixed on the semiconductor wafer surface on which the cuts are formed. After that, grinding is performed from the surface opposite to the surface on which the protective sheet of the semiconductor wafer is pasted to the portion where the cut is formed. In this way, the semiconductor wafer is divided into individual semiconductor chips. Thereby, a large number of thin semiconductor chips can be formed.

  On the other hand, as described in Patent Document 2 below, there is also known a method of irradiating a pulse laser while focusing on a region of a semiconductor wafer to be diced. In this case, the laser beam is applied to the dividing lines extending in the X direction and the Y direction for modification. Since the strength of the modified region decreases, the semiconductor wafer can be divided into individual semiconductor chips by applying an external force in the surface direction.

  By the way, as described in Patent Document 2, in order to mount individual semiconductor chips on a substrate from a semiconductor wafer that has been diced in advance or a semiconductor wafer in which a divided region has been modified by irradiation with the laser beam, Conventionally, an adhesive film called a bonding film has been used.

  That is, a die bonding film is laminated on the back surface of a semiconductor wafer that has been diced in advance or a semiconductor wafer on which the altered region is formed, and an expandable dicing tape is laminated on the opposite surface of the die bonding film. Next, an annular dicing ring is attached to the dicing tape. Then, the dicing tape is pushed up by a cylindrical split jig to expand the dicing tape. Thereby, the semiconductor wafer is divided into individual semiconductor chips by expanding the space between the semiconductor chips of the semiconductor wafer previously diced or by applying an external force to the semiconductor wafer having the altered layer provided on the dividing line. Due to this external force, the die bonding film is also divided together with the semiconductor chip. Thereby, the die bonding film is also singulated. Therefore, the semiconductor chip can be taken out together with the individual die bonding film on the lower surface of the semiconductor chip, and can be mounted on the substrate.

  Patent Document 2 discloses a method of irradiating an electromagnetic wave such as infrared light to a die bonding film in order to facilitate the division of the die bonding film by the external force.

  Patent Document 3 below discloses a method of cooling the die bonding film below the glass transition temperature of the resin constituting the film in order to facilitate the splitting of the die bonding film. .

JP 2006-245467 A JP 2006-80142 A JP 2007-27250 A

  As described above, when picking up the semiconductor chip together with the die bonding film from the structure in which the die bonding film is laminated on the semiconductor wafer having been diced in advance or the semiconductor wafer on which the altered layer is formed, the dicing tape is expanded It was necessary to split the die bonding film. In this case, the cylindrical split jig is brought into pressure contact with the dicing tape, and the dicing tape is pulled radially outward. Thereby, the die bonding film is split along the dicing lines and splitting lines extending in the X direction and the Y direction.

  In this case, as shown in a schematic plan view in FIG. 13, in the structure in which the die bonding layer 102 is laminated on the lower surface of the dicing tape 101, a stress spreading radially outward is applied to the dicing tape 101. This stress is given by pressing the dicing tape 101 with a cylindrical split jig. Therefore, as indicated by the arrows in the figure, the tensile stress acts radially outward from the center of the circular dicing tape 101.

  On the other hand, the line to be split in the die bonding layer 102 extends in the X direction and the Y direction as described above. Therefore, the tensile stress applied to the dicing tape may not surely split the die bonding layer along the line to be split. That is, when the arrow X direction and the Y direction in FIG. 9 are the directions of the lines to be split in the die bonding layer 102, the portions on both sides of the line to be split extending in the Y direction are applied in the portion where the stress applied in the direction indicated by X1 acts. The die bonding layer is reliably split. On the other hand, as shown by an arrow A, for example, in a portion where stress is applied in a direction crossing the X direction or Y direction obliquely, die bonding on both sides of the cut extending in the X direction or Y direction by the tensile stress. The layer sometimes did not split well. For this reason, a pickup failure of the semiconductor chip may occur.

  An object of the present invention is to provide a dicing die bonding tape capable of reliably splitting a die bonding layer along a split direction extending in the X direction and the Y direction when a tensile stress is applied to the dicing tape by a split jig. It is in.

  The present invention is a dicing die bonding tape used for picking up a semiconductor chip together with a die bonding layer from a semiconductor wafer. A dicing die bonding tape according to the present invention comprises a die bonding layer made of an adhesive and having a circular planar shape and a dicing tape layer laminated on one surface side of the die bonding layer.

  In the present invention, a plurality of missing portions are formed on the outer peripheral edge of the die bonding layer. The plurality of missing portions are formed on the outer peripheral edge of the die bonding layer or inside thereof, and the plurality of missing portions are first straight lines passing through the center of the circular dicing tape layer. When a tensile stress outward in the radial direction is applied in a direction parallel to the surface, and a tensile stress outward in the radial direction in a direction perpendicular to the first straight line and parallel to the second straight line passing through the center of the dicing tape Is added, the first dicing tape layer is passed through the center of the circular dicing tape layer and extends in a direction along the third straight line extending in the direction between the first straight line and the second straight line. The three straight lines are provided at the outer peripheral edge or inside thereof at a position where the straight line intersects the die bonding layer.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the said missing part is the notch or notch provided in the outer periphery of the said die-bonding layer. In this case, a notch or a notch can be easily formed at the outer peripheral edge of the die bonding layer. The missing portion may be a through hole provided inside the outer peripheral edge of the die bonding layer. By forming such a through hole as a missing portion, similarly, extension of the die bonding layer in the direction along the third straight line can be suppressed.

  In a specific aspect of the dicing-die bonding tape according to the present invention, the extending direction of the third straight line is a direction that forms an angle of 45 ° with the first and second straight lines. In this case, when the dicing tape layer is expanded radially outward by the split jig in a state where the X direction and the Y direction of the semiconductor wafer coincide with the first straight line and the second straight line, It is possible to more reliably suppress the extension of the die bonding layer in the portion where the notch or the notch is formed. That is, since a plurality of notches or notches are provided at the above-described positions, extension of the die bonding layer in directions other than the first and second directions is further reliably suppressed.

  In another specific aspect of the dicing die bonding tape according to the present invention, the dicing layer further includes a base material layer laminated between the die bonding layer and the dicing tape layer, and the die bonding layer of the base material layer. The part in contact with is made of a non-adhesive material. In this case, after splitting the die bonding layer, the semiconductor chip and the die bonding layer can be easily separated from the base material layer made of a non-adhesive material and picked up.

  In the dicing die bonding tape according to the present invention, since the plurality of missing portions are formed in the die bonding layer, when a tensile stress is applied to the dicing tape in the radially outer side, the die bonding layer is It is difficult to extend in the direction between the straight line and the second straight line. Therefore, the die bonding layer extends relatively greatly in a direction parallel to the first straight line and the second straight line. Therefore, by matching the first straight line and the second straight line with the X direction and the Y direction of the semiconductor wafer, the die bonding layer can be reliably split into individual semiconductor chips. Therefore, it becomes possible to remarkably reduce the pick-up failure of the semiconductor chip.

(A) is a top view of the dicing die-bonding tape which concerns on one Embodiment of this invention, (b) is the front sectional drawing. It is a top view which shows the dicing die-bonding tape row | line | column in which multiple dicing die-bonding tapes of this invention are formed. It is a schematic plan view for demonstrating the semiconductor wafer diced first. (A) And (b) is a typical top view and front sectional view showing the state where a dicing die bonding tape was laminated on a semiconductor wafer, and a dicing ring was made to contact a dicing tape. It is front sectional drawing for demonstrating the process of splitting the die-bonding layer of a semiconductor chip lower surface using the dicing die-bonding tape of one Embodiment of this invention. (A) And (b) is each front sectional drawing for demonstrating the process of splitting the die-bonding layer of a semiconductor chip lower surface using the dicing die-bonding tape of one Embodiment of this invention. It is front sectional drawing which shows the state which split the die-bonding layer when picking up a semiconductor chip using the dicing die-bonding tape of one Embodiment of this invention. It is a schematic plan view for demonstrating the dicing die-bonding tape which concerns on other embodiment of this invention. It is a schematic plan view for demonstrating the dicing die-bonding tape which concerns on further another embodiment of this invention. It is a schematic plan view for demonstrating the dicing die-bonding tape which concerns on further another embodiment of this invention. It is a schematic plan view for demonstrating the dicing die-bonding tape which concerns on further another embodiment of this invention. It is a schematic plan view for demonstrating the dicing die-bonding tape which concerns on further another embodiment of this invention. It is a typical top view for demonstrating the problem of the conventional dicing die-bonding tape.

  Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.

  FIG.1 (b) is front sectional drawing which shows the dicing die-bonding tape which concerns on one Embodiment of this invention. The dicing die bonding tape 1 has a long release layer 2. The release layer 2 is made of an appropriate synthetic resin such as polyethylene terephthalate. The surface of the release layer 2 may be subjected to a release treatment.

  A die bonding layer 3 is formed on the release layer 2. The die bonding layer 3 is a layer used as a die bonding material for a semiconductor chip. That is, the die bonding layer 3 is used for bonding a semiconductor chip to a substrate or another semiconductor chip. The die bonding layer 3 is made of an appropriate adhesive.

  As will be described later, the die bonding layer 3 is a portion to which a circular semiconductor wafer is attached. In this embodiment, the die bonding layer 3 has a substantially circular planar shape. However, the die bonding layer 3 may have a shape other than a circle.

  A base material layer 4 is laminated so as to cover the die bonding layer 3. The base material layer 4 can be formed using, for example, an active energy ray-curable or thermosetting adhesive composition. In order for the base material layer 4 to have non-adhesiveness, the irradiation amount of the active energy rays may be increased. In order to make the base material layer 4 have adhesiveness, it is only necessary not to irradiate active energy rays or to reduce the irradiation amount of active energy rays.

  The base material layer 4 is preferably formed of a composition containing an acrylic polymer. The base material layer 4 is preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. Further, the polarity, storage elastic modulus, or elongation at break of the base material layer 4 can be easily controlled and designed.

  The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is suitably used. By using the (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layer 4 can be made sufficiently low, and the surface energy of the base material layer 4 can be made low. And the peelability from the base material layer 4 of the adhesive layer 3 can be made high.

  The composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably contains an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

  The active energy rays include ultraviolet rays, electron rays, α rays, β rays, γ rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are hardly deteriorated.

  As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. Examples of the thermal reaction initiator include a thermal radical generator. An isocyanate-based crosslinking agent may be added to the composition in order to control the adhesive force.

  A dicing tape 5 is laminated so as to cover the base material layer 4. The dicing tape 5 has a tape body layer 5a and an adhesive layer 5b provided on the lower surface of the tape body layer 5a.

  The tape body layer 5a is made of an appropriate synthetic resin such as polyethylene or polypropylene. However, polyolefin such as polyethylene and polypropylene is suitable because it has excellent expandability during dicing, which will be described later, and has a low environmental load.

  The dicing-die bonding tape 1 of the present embodiment is characterized in that a plurality of notches 3a shown in FIG. 1A are formed as missing portions in the die bonding layer 3. The notch 3a is formed by cutting the die bonding layer 3 at the outer peripheral edge.

  In the present embodiment, the base layer 4 laminated on the die bonding layer 3 is also formed so that the plurality of notches have the same planar shape at the same position as the plurality of notches 3 a of the die bonding layer 3. Has been.

  In FIG. 1A, four notches 3a are arranged at equal intervals in the circumferential direction of the outer peripheral edge of the die bonding layer 3. But the number of the some notches 3a is arbitrary if it is two or more.

  As will be described later, the die bonding layer 3 is split in the X direction and the Y direction orthogonal to the X direction. Thereby, the die bonding layer 3 can be separated into pieces. This splitting direction is shown as an X direction and a Y direction in FIG.

  Specifically, the dicing tape 5 is expanded radially outward using a split jig. In this case, the notch 3a is formed so that the stretching force acts preferentially in the X direction, -X direction, Y direction, and -Y direction in FIG. .

  That is, a straight line extending in the X direction in FIG. 1A and passing through the center O of the dicing tape 5 is defined as a first straight line L1. A straight line that is orthogonal to the first straight line L1 and passes through the center O is defined as a second straight line L2. The plurality of notches 3 a are formed on the outer peripheral edge of the die bonding layer 3 between the portions where the first and second straight lines L 1 and L 2 intersect the outer peripheral edge of the die bonding layer 3.

  More specifically, in this embodiment, two pairs of notches 3a, 3a, 3a, 3a are formed so as to face each other with the center O therebetween. Taking a pair of notches 3a and 3a facing each other through the center O, a straight line connecting the pair of notches 3a and 3a and passing through the center O is defined as a third straight line L3. . The pair of notches 3a, 3a is provided at a position where the third straight line L3 and the outer peripheral edge of the die bonding layer 3 intersect in the direction in which the third straight line L3 extends.

  In the present embodiment, the third straight line L3 is positioned so as to form an angle of 45 ° with each of the first straight line L1 and the second straight line L2. Therefore, the notch 3a is provided at the center between the adjacent intersecting portions in a plurality of portions where the first straight line L1 and the second straight line L2 intersect the outer peripheral edge of the die bonding layer 3. .

  The other pair of notches 3a and 3a is also die-bonded so that the third straight line connecting the other pair of notches 3a and 3a and passing through the center O intersects the first and second straight lines L1 and L2. It is provided on the outer peripheral edge of the layer 3.

  Therefore, in the dicing die bonding tape 1 of the present embodiment, when the dicing tape 5 is uniformly expanded radially outward as will be described later, the tensile stress is transmitted to the die bonding layer 3, but the die bonding layer 3. Is not effective in the direction connecting the notches 3a, 3a facing each other through the center O. Therefore, the extending direction of the die bonding layer 3 is dominant between the notches 3a and 3a, more specifically, the X direction, -X direction, Y direction, and -Y direction in FIG. The die bonding layer 3 can be elongated. Thereby, as will be described later, the die bonding layer 3 can be reliably split in the X direction and the Y direction.

  In the present embodiment, as described above, since the notch having the same planar shape as the notch 3a is also formed in the same position in the base material layer, the base material layer 4 is also formed with the die bonding layer 3. Similarly, the film is stretched so that the X direction, the −X direction, the Y direction, and the −Y direction are dominant. Therefore, the die bonding layer 3 can be reliably split in the X direction and the Y direction.

  In the actual product, a plurality of the dicing-die bonding tape laminated structure shown in FIG. 1B is formed on the long release layer 2 as shown in FIG. 2, the positions of the dicing tape 5 and the die bonding layer 3 are schematically shown in the same manner as in FIG. 1A, and the base material layer 4 is omitted.

  A method of picking up a semiconductor chip using the dicing die bonding tape 1 will be described with reference to FIGS.

  FIG. 3 is a schematic plan view for explaining the pre-diced semiconductor wafer. A disk-shaped semiconductor wafer 7 is laminated on a protective sheet 8. The surface of the protective sheet 8 on which the semiconductor wafer 7 is bonded has adhesiveness. Due to this adhesiveness, the semiconductor wafer 7 is attached to the protective sheet 8.

  The material constituting the protective sheet 8 is not particularly limited, and an appropriate synthetic resin film such as polyethylene terephthalate provided with an adhesive layer on one side can be used. Further, the protective sheet 8 itself may be formed of an acrylic adhesive film.

  The disk-shaped semiconductor wafer 7 laminated on the protective sheet 8 is diced by a known tip dicing method. That is, the semiconductor wafer 7 is cut along a plurality of dicing lines X1 extending in the X direction and a plurality of dicing lines Y1 extending in the Y direction. As a result, the semiconductor wafer 7 is an aggregate of a plurality of individual semiconductor chips 7a.

  As shown in FIG. 4, a laminated body in which a semiconductor wafer 7 that has been diced in advance is laminated on the upper surface of the protective sheet 8 is disposed on the stage 10. A dicing ring 11 is arranged on the stage 10 so as to surround the semiconductor wafer 7.

  On the other hand, in the dicing die bonding tape 1 shown in FIG. 1B, the release layer 2 is peeled off, and the die bonding layer 3 is bonded to the semiconductor wafer 7 so that the dicing shown in FIG. -The die bonding tape 1 is laminated on the semiconductor wafer 7. Thereby, the die bonding layer 3 is bonded to the semiconductor wafer 7. In this case, the adhesive force between the die bonding layer 3 and the semiconductor wafer 7 is higher than the adhesive force between the die bonding layer 3 and the base material layer 4. The dicing tape 5 is attached to the dicing ring 11.

  The relationship between the dicing ring 11 in FIG. 4B, the semiconductor wafer 7, the die bonding layer 3, the base material layer 4 and the dicing tape 5 is shown in a bottom view in FIG. That is, when viewed from below, the semiconductor wafer 7 is first diced along dicing lines extending in the X direction and the Y direction to form a plurality of semiconductor chips 7a. That is, the semiconductor wafer 7 is in a state where a plurality of semiconductor chips 7a are gathered. The die bonding layer 3 described above is laminated on the upper surface of the semiconductor wafer 7. A dicing tape 5 is attached to the upper surface of the dicing ring 11.

  Thereafter, the laminated body having the semiconductor wafer 7 and the dicing die bonding tape 1 is separated from the stage 10 together with the dicing ring 11. Then, the laminate is turned upside down and placed above the cylindrical split jig 13 as shown in FIG.

  Thereafter, the protective sheet 8 bonded to the semiconductor wafer 7 is peeled off. As a result, as shown in FIGS. 6A and 6B, the surface of the semiconductor wafer 7 is exposed. In this case, FIG. 6A is a cross-sectional view corresponding to a portion along the direction extending along the first straight line L1 in FIG. FIG. 6B is a cross-sectional view of a portion corresponding to the portion along the third straight line L3 in FIG. Accordingly, in FIG. 6B, the notches 3 a, 3 a, 4 a, and 4 a that face each other in the die bonding layer 3 and the base material layer 4 are illustrated.

  Next, the cylindrical split jig 13 is moved upward as indicated by the arrows in FIGS. 6A and 6B, and the dicing tape 5 is pushed up. Accordingly, as shown in FIG. 7, tensile stress extending radially outward from the center of the dicing tape 5 is applied to the dicing tape 5. As a result, in the semiconductor wafer 7 stacked on the dicing tape 5 and the die bonding layer 3, the interval between the adjacent semiconductor chips 7a is widened. In other words, the semiconductor chips on both sides of the dicing line extending in the X direction and the Y direction are separated from each other. At the same time, the die bonding layer 3 located on the upper surface of the base material layer 4 is split into a plurality of die bonding layer portions along the dicing lines extending in the X direction and the Y direction.

  In the present embodiment, the splitting in the die bonding layer 3 is reliably performed. As described above, in the conventional dicing-die bonding tape shown in FIG. 13, the die bonding layer may not be split reliably depending on the direction of the stress applied to the outside in the radial direction. On the other hand, in the dicing die bonding tape 1 of the present embodiment, the die bonding layer 3 and the base material layer 4 have the plurality of notches 3a, 3a, 4a, 4a. Therefore, even if a tensile stress toward the radially outer side of the dicing tape 5 is uniformly generated at each position in the radial direction of the dicing tape 5, the direction in which the die bonding layer 3 extends in the die bonding layer 3 is as shown in FIG. The directions indicated by arrows X, -X and Y, -Y are dominant.

  Therefore, even if the dicing tape 5 is pushed up by the split jig 13 and a tensile stress is applied, in the die bonding layer 3, the tensile stress mainly acts radially outward in the X direction and the Y direction.

  Therefore, when the dicing line of the semiconductor wafer 7 and the splitting direction of the die bonding layer are the X direction and the Y direction, the extending direction of the third straight line connecting the notches 3a and 3a facing each other of the die bonding layer 3 is defined. If the direction intersects the X direction and the Y direction, the die bonding layer 3 can be reliably split along the X direction and the Y direction.

  Therefore, in the pickup method of the present embodiment, the semiconductor chip 7a can be reliably picked up together with the split die bonding layer 3 and bonded onto the substrate or another semiconductor chip. Therefore, it is possible to significantly reduce pickup defects.

  In the above embodiment, the direction in which the notches 3a and 3a that face each other extend, that is, the direction in which the third straight line L3 extends, forms a 45 ° angle with the first straight line L1 and the second straight line L2. However, this angle is not limited to 45 °. That is, in the range of 45 ° ± 10 °, the extending force in the X direction and the Y direction can be made dominant. However, the angle is preferably close to 45 °. Thereby, the die bonding layer 3 can be more reliably split along the X direction and the Y direction.

  In the above embodiment, the notch 3a has an arc shape, but as shown in FIG. 8, a curved portion 3b1 parallel to the outer peripheral edge of the die bonding layer 3, both ends of the curved portion 3b1, and die bonding. The shape which connected the outer periphery of the layer 3 and connected the linear part 3b2, 3b3 extended in a X direction or a Y direction may be sufficient.

  Moreover, as shown in FIG. 9, you may form the notch 3c whose connection part with the outer periphery of the die-bonding layer 3 is curvilinear.

  Further, as shown in FIG. 10, the notch may be formed so as to form a straight line portion 3 d connecting two points on the outer peripheral edge of the die bonding layer 3.

  Further, as shown in FIG. 11, instead of the notches, a plurality of through holes 3f may be formed in the vicinity of the outer peripheral edge of the die bonding layer 3, thereby forming the die bonding layer 3 missing portion.

  In this case, the through hole 3f may have a circular planar shape as shown in FIG. 11, or may be an elliptical planar through hole 3g as shown in FIG.

  In addition, in the said embodiment, although the base material layer 4 was provided, the base material layer 4 does not necessarily need to be provided. In the case where the base material layer 4 is not provided, it is sufficient that the missing portion is provided only in the die bonding layer 3. In this case, the die bonding layer 3 is directly attached to the dicing tape 5.

  In addition, when the base material layer 4 is provided like the said embodiment, although it is desirable to provide a missing part also in the base material layer 4 as mentioned above, the material which the base material layer 4 can expand | extend easily When it consists of, it is not necessary to necessarily provide a missing part in the base material layer 4.

  In the above embodiment, the semiconductor wafer 7 that has been diced, that is, the semiconductor wafer 7 that is diced along dicing lines extending in the X direction and the Y direction is used. However, as described in Patent Document 2, the present invention may use a semiconductor wafer in which an altered layer extending in the X direction and the Y direction, that is, a splitting induction line is formed. Similar to the above embodiment, the dicing die bonding tape 1 is laminated on such a semiconductor wafer, the dicing tape 5 is pushed up by a cylindrical split jig, and the dicing tape 5 is pulled radially outward. The bonding layer 3 can be reliably split along the X direction and the Y direction. In this case, simultaneously with the splitting of the die bonding layer 3, the semiconductor wafer is also split along the splitting induction lines extending in the X direction and the Y direction.

DESCRIPTION OF SYMBOLS 1 ... Dicing-die bonding tape 2 ... Release layer 3 ... Die bonding layer 3a, 3c ... Notch 3b ... Straight line part 3b1 ... Curve part 3b2, 3b3 ... Straight line part 3d ... Straight line part 3f ... Through-hole 4 ... Base material layer 4a ... Notch 5 ... Dicing tape 5a ... Tape body layer 5b ... Adhesive layer 7 ... Semiconductor wafer 7a ... Semiconductor chip 8 ... Protection sheet 10 ... Stage 11 ... Dicing ring 13 ... Splitting jig

Claims (5)

A dicing die bonding tape used for taking out a semiconductor chip together with a die bonding layer from a semiconductor wafer,
A die bonding layer having a circular planar shape made of an adhesive, and
It is laminated on one surface side of the die bonding layer, and includes a dicing tape layer having a circular planar shape, and a plurality of missing portions are formed on the outer periphery or the inner periphery of the die bonding layer, The plurality of missing portions are perpendicular to the first straight line when a radially outward tensile stress is applied in a direction parallel to the first straight line passing through the center of the circular dicing tape layer, and the dicing tape is perpendicular to the first straight line. When a radially outward tensile stress is applied in a direction parallel to the second straight line passing through the center of the circular dicing tape layer, it passes through the center of the circular dicing tape layer and is between the first straight line and the second straight line. In order to suppress the extension of the die bonding layer in the direction along the third straight line extending in the direction, the third straight line may be on the outer peripheral edge or on the inner side at a position intersecting the outer peripheral edge of the die bonding layer. Dicing die bonding tape provided.   The dicing die bonding tape according to claim 1, wherein the missing portion is a notch or a notch provided in an outer peripheral edge of the die bonding layer.   The dicing die bonding tape according to any one of claims 1 to 3, wherein the missing portion is formed of a through hole provided inside an outer peripheral edge of the die bonding layer.   2. The dicing die bonding tape according to claim 1, wherein the extending direction of the third straight line is a direction that forms an angle of 45 ° with the first and second straight lines.   The base material layer laminated | stacked between the said die bonding layer and the said dicing tape layer is further provided, The part which is in contact with the said die bonding layer of this base material layer consists of non-adhesive material. The dicing die bonding tape according to any one of 4.

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