JP2012080250A - Piezoelectric device - Google Patents

Piezoelectric device Download PDF

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JP2012080250A
JP2012080250A JP2010222311A JP2010222311A JP2012080250A JP 2012080250 A JP2012080250 A JP 2012080250A JP 2010222311 A JP2010222311 A JP 2010222311A JP 2010222311 A JP2010222311 A JP 2010222311A JP 2012080250 A JP2012080250 A JP 2012080250A
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thermistor element
piezoelectric vibration
thermistor
element mounting
piezoelectric
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JP5144732B2 (en
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Atsushi Muraoka
篤 村岡
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Priority to JP2010222311A priority Critical patent/JP5144732B2/en
Priority to TW103129807A priority patent/TWI548204B/en
Priority to TW100109669A priority patent/TWI466437B/en
Priority to CN201410356066.4A priority patent/CN104124940B/en
Priority to CN201110084990.8A priority patent/CN102270963B/en
Priority to US13/074,672 priority patent/US8749123B2/en
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Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric device that prevents an oscillation frequency fluctuation by reducing noise superposition on a thermistor element and reducing a difference in temperature information.SOLUTION: The piezoelectric device includes: an element mounting member 110 comprising a substrate part 110a, a first frame part 110b disposed on one principal surface of the substrate part, and a second frame part 110c disposed on the other principal surface of the substrate part; a piezoelectric vibrator element 120 mounted on piezoelectric vibrator element mounting pads 111 disposed in a first recessed space; a thermistor element 140 mounted on thermistor element mounting pads 112 disposed in a second recessed space; a lid 130 hermetically sealing the first recessed space; and electrode terminals G for external connection comprising two paired electrode terminals for the piezoelectric vibrator element and two paired electrode terminals for the thermistor element at four corners of the second frame part. In a plan view of the piezoelectric vibrator element and the thermistor element both mounted on the element mounting member, the thermistor element is positioned within exciting electrodes of the piezoelectric vibrator element.

Description

本発明は、電子機器等に用いられる圧電デバイスに関するものである。   The present invention relates to a piezoelectric device used in electronic equipment and the like.

従来の圧電デバイスは、その例として素子搭載部材、圧電振動素子、サーミスタ素子、蓋体とから主に構成されている構造が知られている（例えば、特許文献１を参照）。
素子搭載部材は、基板部と第１の枠部と第２の枠部で構成されている。
この素子搭載部材は、前記基板部の一方の主面に前記第１の枠部と第２の枠部が設けられて第１の凹部空間が形成される。
第１の凹部空間内に露出する基板部の一方の主面には、２個一対の圧電振動素子搭載パッドが設けられている。
素子搭載部材の側面には、サーミスタ素子搭載パッドが設けられている。
また、基板部の他方の主面の４隅には、外部接続用電極端子が設けられている。
この圧電振動素子搭載パッド上には、導電性接着剤を介して電気的に接続される一対の励振用電極を表裏主面に有した圧電振動素子が搭載されている。この圧電振動素子を囲繞する素子搭載部材の第１の枠部の頂面には金属製の蓋体を被せられ、接合されている。これにより第１の凹部空間が気密封止されている。
また、サーミスタ素子搭載パッド上には、半田等の導電性接合材を介して接続されるサーミスタ素子が搭載されている。
サーミスタ素子は、電圧と温度との関係が線形を示すものであり、その温度での電圧が、外部接続用電極端子を介して圧電デバイスの外へ出力される。この出力された電圧は、例えば、電子機器等のメインＩＣ内で温度情報に換算することができる。
また、外部接続用電極端子は、２個一対の水晶振動素子用電極端子と、２個一対のサーミスタ素子用電極端子と、により構成されている。その水晶振動素子用電極端子は、対角に配置されている。また、サーミスタ素子用電極端子も同様に、対角に配置されている。 As a conventional piezoelectric device, for example, a structure mainly composed of an element mounting member, a piezoelectric vibration element, a thermistor element, and a lid is known (see, for example, Patent Document 1).
The element mounting member includes a substrate part, a first frame part, and a second frame part.
In the element mounting member, the first frame portion and the second frame portion are provided on one main surface of the substrate portion to form a first recess space.
Two pairs of piezoelectric vibration element mounting pads are provided on one main surface of the substrate portion exposed in the first recess space.
A thermistor element mounting pad is provided on the side surface of the element mounting member.
Also, external connection electrode terminals are provided at the four corners of the other main surface of the substrate portion.
On the piezoelectric vibration element mounting pad, a piezoelectric vibration element having a pair of excitation electrodes electrically connected via a conductive adhesive on the front and back main surfaces is mounted. The top surface of the first frame portion of the element mounting member that surrounds the piezoelectric vibration element is covered with a metal lid and joined. Thereby, the first recess space is hermetically sealed.
A thermistor element connected via a conductive bonding material such as solder is mounted on the thermistor element mounting pad.
The thermistor element has a linear relationship between voltage and temperature, and the voltage at that temperature is output to the outside of the piezoelectric device via the external connection electrode terminal. This output voltage can be converted into temperature information in a main IC such as an electronic device.
The external connection electrode terminal is composed of two pairs of crystal oscillation element electrode terminals and two pairs of thermistor element electrode terminals. The crystal vibration element electrode terminals are arranged diagonally. Similarly, the thermistor element electrode terminals are also arranged diagonally.

特開２００８−２０５９３８号公報JP 2008-205938 A

しかしながら、従来の圧電デバイスにおいては、素子搭載部材の側面の方に寄せてサーミスタ素子が搭載されているため、サーミスタ素子にノイズが重畳し、正確なサーミスタ素子の値を出力することができないといった課題があった。
また、サーミスタ素子からの出力値が異なってしまうことで、サーミスタ素子から出力された電圧を換算することで得られた温度情報と、実際の圧電振動素子の周囲の温度情報との差異が大きくなってしまうといった課題があった。 However, in the conventional piezoelectric device, since the thermistor element is mounted closer to the side surface of the element mounting member, noise is superimposed on the thermistor element, and an accurate value of the thermistor element cannot be output. was there.
In addition, since the output value from the thermistor element is different, the difference between the temperature information obtained by converting the voltage output from the thermistor element and the temperature information around the actual piezoelectric vibration element is increased. There was a problem such as.

本発明は上記課題に鑑みてなされたものであり、サーミスタ素子にノイズが重畳することを低減し、温度情報の差異を抑え、発振周波数が変動することを防ぐ圧電デバイスを提供することを課題とする。   The present invention has been made in view of the above problems, and it is an object of the present invention to provide a piezoelectric device that reduces noise superimposed on the thermistor element, suppresses differences in temperature information, and prevents fluctuations in oscillation frequency. To do.

本発明の圧電デバイスは、基板部と、この基板部の一方の主面に設けられる第１の枠部と、基板部の他方の主面に設けられる第２の枠部とからなる素子搭載部材と、基板部と第１の枠部とで形成される第１の凹部空間内に露出した基板部の主面に設けられた圧電振動素子搭載パッドに搭載されている圧電振動素子と、基板部と第２の枠部とで形成される第２の凹部空間内に露出した基板部の主面に設けられたサーミスタ素子搭載パッドに搭載されているサーミスタ素子と、第１の凹部空間を気密封止する蓋体と、第２の枠部の基板部の他方の主面と同一方向を向く面の４角に２個一対の圧電振動素子用電極端子と２個一対のサーミスタ素子用電極端子とから構成される外部接続用電極端子と、を備え、前記素子搭載部材に前記圧電振動素子と前記サーミスタ素子とを搭載した状態で、平面視で前記圧電振動素子に設けられる励振用電極の平面内に前記サーミスタ素子を位置させて構成されていることを特徴とするものである。   The piezoelectric device of the present invention is an element mounting member comprising a substrate portion, a first frame portion provided on one main surface of the substrate portion, and a second frame portion provided on the other main surface of the substrate portion. A piezoelectric vibration element mounted on a piezoelectric vibration element mounting pad provided on a main surface of the substrate portion exposed in the first recess space formed by the substrate portion and the first frame portion, and the substrate portion The thermistor element mounted on the thermistor element mounting pad provided on the main surface of the substrate portion exposed in the second recess space formed by the second frame portion and the first recess space are hermetically sealed A pair of piezoelectric vibration element electrode terminals and two pairs of thermistor element electrode terminals at four corners of a surface facing the same direction as the other main surface of the substrate portion of the second frame portion, An external connection electrode terminal comprising: the element mounting member and the piezoelectric vibration element; While mounting a serial thermistor element, it is characterized in that it is constituted by positioning the thermistor element in the plane of the excitation electrodes provided on the piezoelectric vibrating element in a plan view.

本発明の圧電デバイスによれば、素子搭載部材に圧電振動素子とサーミスタ素子とを搭載した状態で、平面視で圧電振動素子に設けられる励振用電極の平面内に前記サーミスタ素子を位置させていることにより、励振用電極によってサーミスタ素子を保護するため、従来の圧電デバイスに比べてサーミスタ素子にノイズが重畳することを低減し、正確なサーミスタ素子の値を出力することができる。
また、サーミスタ素子から正確な出力値を出力することができるので、サーミスタ素子から出力された電圧を換算することで得られた温度情報と、実際の圧電振動素子の周囲の温度情報との差異を低減することが可能となる。 According to the piezoelectric device of the present invention, the thermistor element is positioned in the plane of the excitation electrode provided in the piezoelectric vibration element in a plan view in a state where the piezoelectric vibration element and the thermistor element are mounted on the element mounting member. Thus, since the thermistor element is protected by the excitation electrode, it is possible to reduce the superimposition of noise on the thermistor element as compared with the conventional piezoelectric device, and to output an accurate value of the thermistor element.
In addition, since an accurate output value can be output from the thermistor element, the difference between the temperature information obtained by converting the voltage output from the thermistor element and the temperature information around the actual piezoelectric vibration element can be calculated. It becomes possible to reduce.

本発明の実施形態に係る圧電デバイスを示す分解斜視図である。1 is an exploded perspective view showing a piezoelectric device according to an embodiment of the present invention. 図１のＡ−Ａ断面図である。It is AA sectional drawing of FIG. 本発明の実施形態に係る圧電デバイスを圧電振動素子搭載側からみた平面図である。It is the top view which looked at the piezoelectric device which concerns on embodiment of this invention from the piezoelectric vibration element mounting side. 本発明の実施形態に係る圧電デバイスをサーミスタ素子搭載側からみた平面図である。It is the top view which looked at the piezoelectric device which concerns on embodiment of this invention from the thermistor element mounting side. （ａ）は、本発明の実施形態に係る圧電デバイスを構成する素子搭載部材の基板部の一方の主面からみた平面図であり、（ｂ）は、本発明の実施形態に係る圧電デバイスを構成する素子搭載部材の内層の一方の主面からみた平面図である。(A) is the top view seen from one main surface of the board | substrate part of the element mounting member which comprises the piezoelectric device which concerns on embodiment of this invention, (b) is the piezoelectric device which concerns on embodiment of this invention. It is the top view seen from one main surface of the inner layer of the element mounting member to comprise. （ａ）は、本発明の実施形態に係る圧電デバイスを構成する素子搭載部材の基板部の他方の主面からみた平面図であり、（ｂ）は、本発明の実施形態に係る圧電デバイスを構成する素子搭載部材を他方の主面からみた平面図である。(A) is the top view seen from the other main surface of the board | substrate part of the element mounting member which comprises the piezoelectric device which concerns on embodiment of this invention, (b) is a piezoelectric device which concerns on embodiment of this invention. It is the top view which looked at the element mounting member which comprises from the other main surface.

以下、本発明を添付図面に基づいて詳細に説明する。尚、圧電振動素子に水晶を用いた場合について説明する。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. A case where quartz is used for the piezoelectric vibration element will be described.

図１及び図２に示すように、本発明の実施形態に係る圧電デバイス１００は、素子搭載部材１１０と圧電振動素子１２０と蓋体１３０とサーミスタ素子１４０で主に構成されている。この圧電デバイス１００は、前記素子搭載部材１１０に形成されている第１の凹部空間Ｋ１内に圧電振動素子１２０が搭載され、第２の凹部空間Ｋ２内には、サーミスタ素子１４０が搭載されている。その第１の凹部空間Ｋ１が蓋体１３０により気密封止された構造となっている。   As shown in FIGS. 1 and 2, the piezoelectric device 100 according to the embodiment of the present invention mainly includes an element mounting member 110, a piezoelectric vibration element 120, a lid body 130, and a thermistor element 140. In the piezoelectric device 100, the piezoelectric vibration element 120 is mounted in the first recessed space K1 formed in the element mounting member 110, and the thermistor element 140 is mounted in the second recessed space K2. . The first recess space K1 is hermetically sealed by the lid 130.

圧電振動素子１２０は、図１及び図２に示すように、水晶素板１２１に励振用電極１２２を被着形成したものであり、外部からの交番電圧が励振用電極１２２を介して水晶素板１２１に印加されると、所定の振動モード及び周波数で励振を起こすようになっている。
水晶素板１２１は、人工水晶体から所定のカットアングルで切断し外形加工を施された概略平板状で平面形状が例えば四角形となっている。
励振用電極１２２は、前記水晶素板１２１の表裏両主面に金属を所定のパターンで被着・形成したものである。
このような圧電振動素子１２０は、その両主面に被着されている励振用電極１２２から延出する引き出し電極１２３と第１の凹部空間Ｋ１内底面に形成されている圧電振動素子搭載パッド１１１とを、導電性接着剤ＤＳを介して電気的且つ機械的に接続することによって第１の凹部空間Ｋ１に搭載される。このときの引き出し電極１２３が設けられた一辺とは反対側の自由端となる端辺を圧電振動素子１２０の先端部とする。 As shown in FIGS. 1 and 2, the piezoelectric vibration element 120 is formed by adhering an excitation electrode 122 to a crystal element plate 121, and an alternating voltage from the outside passes through the excitation electrode 122. When applied to 121, excitation occurs in a predetermined vibration mode and frequency.
The quartz base plate 121 is a substantially flat plate shape that is cut from an artificial crystalline lens at a predetermined cut angle and is subjected to outer shape processing, and has a planar shape of, for example, a quadrangle.
The excitation electrode 122 is formed by depositing and forming a metal in a predetermined pattern on both the front and back main surfaces of the crystal base plate 121.
Such a piezoelectric vibration element 120 includes a lead electrode 123 extending from the excitation electrode 122 attached to both main surfaces of the piezoelectric vibration element 120 and a piezoelectric vibration element mounting pad 111 formed on the inner bottom surface of the first recess space K1. Are electrically and mechanically connected via the conductive adhesive DS to be mounted in the first recess space K1. At this time, an end side that is a free end opposite to the side on which the extraction electrode 123 is provided is defined as a tip portion of the piezoelectric vibration element 120.

図１〜図４に示すサーミスタ素子１４０は、温度変化によって電気抵抗が顕著な変化を示すものであり、この抵抗値の変化から出力される電圧が変化するため、電圧と温度との関係により、出力された電圧を換算することで、温度情報を得ることができる。サーミスタ素子１４０は、電圧と温度との関係が線形を示すものであり、その温度での電圧が、外部接続用電極端子Ｇを介して圧電デバイス１００の外へ出力されることにより、例えば、電子機器等のメインＩＣ（図示せず）で出力された電圧を換算することで温度情報を得ることができる。
サーミスタ素子１４０は、図２に示すように、素子搭載部材１１０の第２の凹部空間Ｋ２内に露出した後述する基板部１１０ａに設けられたサーミスタ素子搭載パッド１１２に半田等の導電性接合材ＨＤを介して搭載されている。
また、サーミスタ素子１４０は、図３に示すように、前記素子搭載部材１１０に前記圧電振動素子１２０と前記サーミスタ素子１４０とを搭載した状態で、平面視で前記圧電振動素子１２０に設けられる励振用電極１２２の平面内に位置するように、第２の凹部空間Ｋ２内に搭載されている。つまり、図３に示すように、サーミスタ素子１４０は、圧電振動素子１２０の励振用電極１２２の直下にある第２の凹部空間Ｋ１内に搭載され、前記励振用電極１２２からはみ出ることがなく、平面視で励振用電極１２２が設けられている面積内に設けられている。
また、実際に前記素子搭載部材１１０に前記圧電振動素子１２０と前記サーミスタ素子１４０とを搭載した状態で、平面視で前記圧電振動素子１２０に設けられる励振用電極１２２の平面内に位置するようにサーミスタ素子を１４０搭載した場合には、サーミスタ素子１４０にノイズが重畳せず、正確なサーミスタ素子１４０の値を出力できることが確認された。 The thermistor element 140 shown in FIGS. 1 to 4 shows a remarkable change in electrical resistance due to a temperature change, and the voltage output from this change in resistance value changes. Therefore, depending on the relationship between voltage and temperature, Temperature information can be obtained by converting the output voltage. The thermistor element 140 has a linear relationship between voltage and temperature, and the voltage at that temperature is output to the outside of the piezoelectric device 100 via the external connection electrode terminal G. Temperature information can be obtained by converting a voltage output from a main IC (not shown) such as a device.
As shown in FIG. 2, the thermistor element 140 includes a conductive bonding material HD such as solder on a thermistor element mounting pad 112 provided on a substrate part 110a (described later) exposed in the second recessed space K2 of the element mounting member 110. It is mounted through.
Further, as shown in FIG. 3, the thermistor element 140 is for excitation provided in the piezoelectric vibration element 120 in a plan view in a state where the piezoelectric vibration element 120 and the thermistor element 140 are mounted on the element mounting member 110. It is mounted in the second recessed space K2 so as to be located in the plane of the electrode 122. That is, as shown in FIG. 3, the thermistor element 140 is mounted in the second recessed space K <b> 1 immediately below the excitation electrode 122 of the piezoelectric vibration element 120, and does not protrude from the excitation electrode 122. It is provided within the area where the excitation electrode 122 is provided as viewed.
Further, in a state where the piezoelectric vibration element 120 and the thermistor element 140 are actually mounted on the element mounting member 110, the element mounting member 110 is positioned in the plane of the excitation electrode 122 provided on the piezoelectric vibration element 120 in a plan view. It was confirmed that when the thermistor element 140 is mounted, noise is not superimposed on the thermistor element 140 and an accurate value of the thermistor element 140 can be output.

図１〜図２に示すように、素子搭載部材１１０は、基板部１１０ａと、第１の枠部１１０ｂ、第２の枠部１１０ｃとで主に構成されている。
この素子搭載部材１１０は、前記基板部１１０ａの一方の主面に第１の枠部１１０ｂが設けられて、第１の凹部空間Ｋ１が形成されている。また、素子搭載部材１１０の他方の主面に第２の枠部１１０ｃが設けられて、第２の凹部空間Ｋ２が形成されている。
尚、この素子搭載部材１１０を構成する基板部１１０ａ及び第２の枠部１１０ｃは、例えばアルミナセラミックス、ガラス−セラミックス等のセラミック材料を複数積層することよって形成されている。
第１の枠部１１０ｂは、４２アロイやコバール等の金属から成り、中心が打ち抜かれた枠状になっている。
また、第１の枠部１１０ｂは、基板部１１０ａの一方の主面の外周を囲繞するように設けられた封止用導体膜ＨＢ上にロウ付けなどにより接続される。
第１の凹部空間Ｋ１内で露出した基板部１１０ａの一方の主面には、２個一対の圧電振動素子搭載パッド１１１が設けられている。
また、図１〜図４に示すように、素子搭載部材１１０は、基板部１１０ａの他方の主面と第２の枠部１１０ｃによって第２の凹部空間Ｋ２が形成されている。
第２の凹部空間Ｋ２内で露出した基板部１１０ａの他方の主面には、サーミスタ素子搭載パッド１１２が設けられている。 As shown in FIGS. 1 to 2, the element mounting member 110 is mainly composed of a substrate portion 110 a, a first frame portion 110 b, and a second frame portion 110 c.
In the element mounting member 110, a first frame portion 110b is provided on one main surface of the substrate portion 110a to form a first recess space K1. In addition, a second frame portion 110c is provided on the other main surface of the element mounting member 110 to form a second recessed space K2.
In addition, the board | substrate part 110a and the 2nd frame part 110c which comprise this element mounting member 110 are formed by laminating | stacking multiple ceramic materials, such as an alumina ceramic and glass-ceramics, for example.
The first frame portion 110b is made of a metal such as 42 alloy or Kovar, and has a frame shape with a punched center.
The first frame portion 110b is connected to the sealing conductor film HB provided so as to surround the outer periphery of one main surface of the substrate portion 110a by brazing or the like.
Two pairs of piezoelectric vibration element mounting pads 111 are provided on one main surface of the substrate portion 110a exposed in the first recess space K1.
As shown in FIGS. 1 to 4, the element mounting member 110 has a second recessed space K2 formed by the other main surface of the substrate portion 110a and the second frame portion 110c.
A thermistor element mounting pad 112 is provided on the other main surface of the substrate portion 110a exposed in the second recess space K2.

前記素子搭載部材１１０の第２の枠部１１０ｃの基板部１１０ａの他方の主面と同一方向を向く面の４角に外部接続用電極端子Ｇとが設けられている。つまり、前記素子搭載部材１１０の第２の枠部１１０ｃの圧電振動素子搭載パッド１１１が設けられている面とは反対側の主面の４隅には、外部接続用電極端子Ｇが設けられている。
外部接続用電極端子Ｇは、２個一対の圧電振動素子用電極端子Ｇ１と２個一対のサーミスタ素子用電極端子Ｇ２により構成されている。
２個一対の圧電振動素子用電極端子Ｇ１は、前記素子搭載部材１１０の第２の枠部１１０ｃの他方の主面の対角に位置する箇所に設けられている。
また、２個一対のサーミスタ素子用電極端子Ｇ２は第２の枠部１１０ｃの前記圧電振動素子用電極端子Ｇ１が設けられている位置と異なる２つの隅部に設けられている。つまり、前記サーミスタ素子用電極端子Ｇ２は、前記圧電振動素子用電極端子Ｇ１が設けられている対角とは異なる第２の枠部１１０ｃの対角に設けられている。 External connection electrode terminals G are provided at four corners of the surface facing the same direction as the other main surface of the substrate portion 110a of the second frame portion 110c of the element mounting member 110. That is, the external connection electrode terminals G are provided at the four corners of the main surface opposite to the surface on which the piezoelectric vibration element mounting pad 111 of the second frame portion 110c of the element mounting member 110 is provided. Yes.
The external connection electrode terminal G includes two pairs of piezoelectric vibration element electrode terminals G1 and two pairs of thermistor element electrode terminals G2.
The two pairs of piezoelectric vibration element electrode terminals G1 are provided at a position located diagonally to the other main surface of the second frame portion 110c of the element mounting member 110.
The two pairs of thermistor element electrode terminals G2 are provided at two corners of the second frame 110c different from the positions where the piezoelectric vibration element electrode terminals G1 are provided. In other words, the thermistor element electrode terminal G2 is provided at a diagonal of the second frame portion 110c different from the diagonal at which the piezoelectric vibration element electrode terminal G1 is provided.

圧電振動素子搭載パッド１１１といずれかの外部接続用電極端子Ｇは、前記素子搭載部材１１０の第２の凹部空間Ｋ２内の基板部１１０ａに形成された部分を有する圧電振動素子用配線パターン１１３と、基板部１１０ａに設けられた第１のビア導体１１４と、基板部１１０ａ及び第２の枠部１１０ｃの内部に形成された第２のビア導体１１５により接続されている。
つまり、図３及び図４に示すように、圧電振動素子搭載パッド１１１は、第１のビア導体１１４を介して圧電振動素子用配線パターン１１３の一端と接続されている。また、圧電振動素子用配線パターン１１３の他端は、第２のビア導体１１５を介して圧電振動素子用電極端子Ｇ１と接続されている。よって、圧電振動素子搭載パッド１１１は、圧電振動素子用電極端子Ｇ１と電気的に接続されることになる。 The piezoelectric vibration element mounting pad 111 and any one of the external connection electrode terminals G include a piezoelectric vibration element wiring pattern 113 having a portion formed on the substrate portion 110a in the second recess space K2 of the element mounting member 110. The first via conductor 114 provided in the substrate part 110a is connected to the second via conductor 115 formed inside the substrate part 110a and the second frame part 110c.
That is, as shown in FIGS. 3 and 4, the piezoelectric vibration element mounting pad 111 is connected to one end of the piezoelectric vibration element wiring pattern 113 via the first via conductor 114. The other end of the piezoelectric vibration element wiring pattern 113 is connected to the piezoelectric vibration element electrode terminal G <b> 1 via the second via conductor 115. Therefore, the piezoelectric vibration element mounting pad 111 is electrically connected to the piezoelectric vibration element electrode terminal G1.

また、サーミスタ素子搭載パッド１１２とサーミスタ素子用電極端子Ｇ２は、前記素子搭載部材１１０の第２の凹部空間Ｋ２内の基板部１１０ａに形成された部分を有するサーミスタ素子用配線パターン１１６と第２の枠部１１０ｃの内部に形成された第３のビア導体１１７により接続されている。
つまり、図４（ａ）及び図４（ｂ）に示すようにサーミスタ素子搭載パッド１１２は、サーミスタ素子用配線パターン１１６の一端と接続されている。また、サーミスタ素子用配線パターン１１６の他端は、第３のビア導体１１７を介してサーミスタ素子用電極端子Ｇ２と接続されている。よって、サーミスタ素子用搭載パッド１１２は、サーミスタ素子用電極端子Ｇ２と電気的に接続されることになる。 Further, the thermistor element mounting pad 112 and the thermistor element electrode terminal G2 have a portion formed on the substrate portion 110a in the second recessed space K2 of the element mounting member 110 and the second wiring pattern 116 for the thermistor element. They are connected by a third via conductor 117 formed inside the frame part 110c.
That is, as shown in FIGS. 4A and 4B, the thermistor element mounting pad 112 is connected to one end of the thermistor element wiring pattern 116. The other end of the thermistor element wiring pattern 116 is connected to the thermistor element electrode terminal G <b> 2 via the third via conductor 117. Therefore, the thermistor element mounting pad 112 is electrically connected to the thermistor element electrode terminal G2.

蓋体１３０は、例えば、Ｆｅ−Ｎｉ合金（４２アロイ）やＦｅ−Ｎｉ−Ｃｏ合金（コバール）などからなる。このような蓋体１３０は、第１の凹部空間Ｋ１を、窒素ガスや真空などで気密的に封止される。具体的には、蓋体１３０は、所定雰囲気で、素子搭載部材１１０の第１の枠部１１０ｂ上に載置され、第１の枠部１１０ｂの表面の金属と蓋体１３０の金属の一部とが溶接されるように所定電流を印加してシーム溶接を行うことにより、第１の枠部１１０ｂに接合される。   The lid 130 is made of, for example, an Fe—Ni alloy (42 alloy), an Fe—Ni—Co alloy (Kovar), or the like. Such a lid 130 hermetically seals the first recessed space K1 with nitrogen gas or vacuum. Specifically, the lid body 130 is placed on the first frame portion 110b of the element mounting member 110 in a predetermined atmosphere, and a part of the metal of the surface of the first frame portion 110b and the metal of the lid body 130. By applying a predetermined current so as to be welded and performing seam welding, the first frame portion 110b is joined.

前記導電性接着剤ＤＳは、シリコーン樹脂等のバインダーの中に導電フィラーとして導電性粉末が含有されているものであり、導電性粉末としては、アルミニウム（Ａｌ）、モリブデン（Ｍｏ）、タングステン（Ｗ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銀（Ａｇ）、チタン（Ｔｉ）、ニッケル（Ｎｉ）、ニッケル鉄（ＮｉＦｅ）、のうちのいずれかまたはこれらの組み合わせを含むものが用いられている。   The conductive adhesive DS contains a conductive powder as a conductive filler in a binder such as a silicone resin. As the conductive powder, aluminum (Al), molybdenum (Mo), tungsten (W ), Platinum (Pt), palladium (Pd), silver (Ag), titanium (Ti), nickel (Ni), nickel iron (NiFe), or a combination thereof is used. .

前記導電性接合材ＨＤは、例えば、Ｓｎ（錫）、Ａｇ（銀）、Ｃｕ（銅）等のうちのいずれかまたはこれらの組み合わせを含むものにより構成されており、フラックス等を含有するペースト状に熱を印加し、前記フラックスを揮発させることによって接合されている。   The conductive bonding material HD is composed of, for example, any one of Sn (tin), Ag (silver), Cu (copper), or a combination thereof, and is a paste containing a flux or the like Is applied by applying heat to the magnetic flux to volatilize the flux.

尚、前記素子搭載部材１１０は、アルミナセラミックスから成る場合、所定のセラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面に圧電振動素子搭載パッド１１１、サーミスタ素子搭載パッド１１２、封止用導体膜ＨＢ、外部接続用電極端子Ｇ等となる導体ペーストを、また、セラミックグリーンシートに打ち抜き等を施して予め穿設しておいた貫通孔内に第１のビア導体１１４、第２のビア導体１１５、第３のビア導体１１７等となる導体ペーストを従来周知のスクリーン印刷によって塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することにより製作される。   When the element mounting member 110 is made of alumina ceramic, the piezoelectric vibration element mounting pad 111 and the thermistor element are mounted on the surface of a ceramic green sheet obtained by adding and mixing an appropriate organic solvent or the like to a predetermined ceramic material powder. A first via conductor is formed in a through-hole previously formed by punching a ceramic green sheet with a conductive paste to be used as the pad 112, the sealing conductive film HB, the electrode terminal G for external connection, etc. 114, the second via conductor 115, the third via conductor 117, etc. are manufactured by applying a conventional paste by screen printing, laminating a plurality of these, press molding, and firing at a high temperature. Is done.

本発明の圧電デバイス１００によれば、サーミスタ素子１４０は、素子搭載部材１１０に圧電振動素子１２０とサーミスタ素子１４０とを搭載した状態で、平面視で圧電振動素子１２０に設けられる励振用電極１２２の平面内に前記サーミスタ素子１４０を位置させていることにより、励振用電極１２２によってサーミスタ素子１４０を保護するため、従来の圧電デバイスに比べてサーミスタ素子１４０にノイズが重畳することを低減し、正確なサーミスタ素子１４０の値を出力することができる。
つまり、蓋部材１３０と励振用電極１２２の２つによって、サーミスタ素子がノイズから保護されるので、従来の圧電デバイスに比べてサーミスタ素子１４０にノイズが重畳することを低減し、正確なサーミスタ素子１４０の値を出力することができる。
また、サーミスタ素子１４０から正確な出力値を出力することができるので、サーミスタ素子１４０から出力された電圧を換算することで得られた温度情報と、実際の圧電振動素子１２０の周囲の温度情報との差異を低減することが可能となる。 According to the piezoelectric device 100 of the present invention, the thermistor element 140 includes the excitation electrode 122 provided on the piezoelectric vibration element 120 in a plan view in a state where the piezoelectric vibration element 120 and the thermistor element 140 are mounted on the element mounting member 110. Since the thermistor element 140 is positioned in a plane, the thermistor element 140 is protected by the excitation electrode 122, so that noise is not superimposed on the thermistor element 140 compared to the conventional piezoelectric device, and the accurate The value of the thermistor element 140 can be output.
That is, since the thermistor element is protected from noise by the cover member 130 and the excitation electrode 122, noise is superimposed on the thermistor element 140 as compared with the conventional piezoelectric device, and the thermistor element 140 is accurate. Can be output.
Further, since an accurate output value can be output from the thermistor element 140, the temperature information obtained by converting the voltage output from the thermistor element 140, the temperature information around the actual piezoelectric vibration element 120, and It is possible to reduce the difference.

また、本発明の圧電デバイス１００によれば、第１の凹部空間Ｋ１内に圧電振動素子１２０が導電性接着剤ＤＳを介して圧電振動素子搭載パッド１１１に搭載され、第２の凹部空間Ｋ２内に、サーミスタ素子１４０が導電性接合材ＨＤを介してサーミスタ素子搭載パッド１１２に搭載されているように別々の凹部空間に搭載されているため、前記導電性接合材ＨＤから発生したガスが圧電振動素子１２０に付着することがなくなる。よって、圧電デバイス１００の発振周波数が変動してしまうことを防ぐことができる。   In addition, according to the piezoelectric device 100 of the present invention, the piezoelectric vibration element 120 is mounted on the piezoelectric vibration element mounting pad 111 via the conductive adhesive DS in the first recess space K1, and the second recess space K2 In addition, since the thermistor element 140 is mounted in separate recess spaces so as to be mounted on the thermistor element mounting pad 112 via the conductive bonding material HD, the gas generated from the conductive bonding material HD is piezoelectrically oscillated. It will not adhere to the element 120. Therefore, it is possible to prevent the oscillation frequency of the piezoelectric device 100 from fluctuating.

尚、本発明は前記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。
例えば、前記した本実施形態では、圧電振動素子１２０を構成する圧電素材として水晶を用いた場合を説明したが、他の圧電素材として、ニオブ酸リチウム、タンタル酸リチウムまたは、圧電セラミックスを圧電素材として用いた圧電振動素子でも構わない。 In addition, this invention is not limited to the said embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.
For example, in the above-described embodiment, the case where crystal is used as the piezoelectric material constituting the piezoelectric vibration element 120 has been described. However, as other piezoelectric materials, lithium niobate, lithium tantalate, or piezoelectric ceramics is used as the piezoelectric material. The piezoelectric vibration element used may be used.

１１０・・・素子搭載部材
１１０ａ・・・基板部
１１０ｂ・・・第１の枠部
１１０ｃ・・・第２の枠部
１１１・・・圧電振動素子搭載パッド
１１２・・・サーミスタ素子搭載パッド
１２０・・・圧電振動素子
１２１・・・水晶素板
１２２・・・励振用電極
１２３・・・引き出し電極
１３０・・・蓋体
１４０・・・サーミスタ素子
１００・・・圧電デバイス
Ｋ１・・・第１の凹部空間
Ｋ２・・・第２の凹部空間
ＤＳ・・・導電性接着剤
ＨＤ・・・導電性接合材
ＨＢ・・・封止用導体膜
Ｇ・・・外部接続用電極端子
Ｇ１・・・圧電振動素子用電極端子
Ｇ２・・・サーミスタ素子用電極端子 DESCRIPTION OF SYMBOLS 110 ... Element mounting member 110a ... Board | substrate part 110b ... 1st frame part 110c ... 2nd frame part 111 ... Piezoelectric vibration element mounting pad 112 ... Thermistor element mounting pad 120. ..Piezoelectric vibration element 121... Quartz element plate 122... Excitation electrode 123... Extraction electrode 130 .. Lid 140 .. Thermistor element 100 ... Piezoelectric device K1. Recessed space K2 ... Second recessed space DS ... Conductive adhesive HD ... Conductive bonding material HB ... Sealing conductor film G ... External connection electrode terminal G1 ... Piezoelectric Electrode terminal for vibration element G2 ... Electrode terminal for thermistor element

Claims (1)

基板部と、この基板部の一方の主面に設けられる第１の枠部と、前記基板部の他方の主面に設けられる第２の枠部とからなる素子搭載部材と、
前記基板部と前記第１の枠部とで形成される第１の凹部空間内に露出した前記基板部の主面に設けられた圧電振動素子搭載パッドに搭載されている圧電振動素子と、
前記基板部と前記第２の枠部とで形成される第２の凹部空間内に露出した前記基板部の主面に設けられたサーミスタ素子搭載パッドに搭載されているサーミスタ素子と、
前記第１の凹部空間を気密封止する蓋体と、
前記第２の枠部の前記基板部の他方の主面と同一方向を向く面の４角に２個一対の圧電振動素子用電極端子と２個一対のサーミスタ素子用電極端子とから構成される外部接続用電極端子と、を備え、
前記素子搭載部材に前記圧電振動素子と前記サーミスタ素子とを搭載した状態で、平面視で前記圧電振動素子に設けられる励振用電極の平面内に前記サーミスタ素子を位置させて構成されていることを特徴とする圧電デバイス。 An element mounting member comprising a substrate portion, a first frame portion provided on one main surface of the substrate portion, and a second frame portion provided on the other main surface of the substrate portion;
A piezoelectric vibration element mounted on a piezoelectric vibration element mounting pad provided on the main surface of the substrate part exposed in a first recess space formed by the substrate part and the first frame part;
A thermistor element mounted on a thermistor element mounting pad provided on the main surface of the substrate part exposed in a second recessed space formed by the substrate part and the second frame part;
A lid for hermetically sealing the first recessed space;
The second frame portion is composed of two pairs of piezoelectric vibration element electrode terminals and two pairs of thermistor element electrode terminals at the four corners of the surface facing the same direction as the other main surface of the substrate portion. An electrode terminal for external connection,
In a state where the piezoelectric vibration element and the thermistor element are mounted on the element mounting member, the thermistor element is positioned in a plane of an excitation electrode provided on the piezoelectric vibration element in a plan view. A characteristic piezoelectric device.
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8754718B2 (en) 2011-03-11 2014-06-17 Seiko Epson Corporation Piezoelectric device and electronic apparatus
JP2014175998A (en) * 2013-03-12 2014-09-22 Kyocera Crystal Device Corp Crystal oscillator
US9264015B2 (en) 2013-10-30 2016-02-16 Seiko Epson Corporation Package, resonation device, oscillator, electronic device, and moving object
US9391586B2 (en) 2012-11-29 2016-07-12 Seiko Epson Corporation Resonator device, electronic device, and moving object
JP2018093551A (en) * 2018-03-19 2018-06-14 セイコーエプソン株式会社 Vibration element, vibrator, electronic device, electronic apparatus, mobile body, and manufacturing method of vibration element
JP2018093555A (en) * 2018-03-26 2018-06-14 京セラ株式会社 Crystal device and electronic equipment
US10680158B2 (en) 2012-06-06 2020-06-09 Seiko Epson Corporation Resonator element, resonator, electronic device, electronic apparatus, mobile body and method of manufacturing resonator element
CN111600600A (en) * 2014-07-30 2020-08-28 精工爱普生株式会社 Vibration device, electronic apparatus, and moving object

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145768A (en) * 1997-11-13 1999-05-28 Toyo Commun Equip Co Ltd Chip component composite piezoelectric device
JP2004320417A (en) * 2003-04-16 2004-11-11 Toyo Commun Equip Co Ltd Temperature compensated piezoelectric oscillator
JP2005286892A (en) * 2004-03-30 2005-10-13 Kyocera Kinseki Corp Piezoelectric vibrator with built-in temperature sensor and piezoelectric oscillator using the same
JP2006339943A (en) * 2005-06-01 2006-12-14 Seiko Epson Corp Piezoelectric device
JP2008205938A (en) * 2007-02-21 2008-09-04 Nippon Dempa Kogyo Co Ltd Crystal oscillator for surface mounting
JP2009005117A (en) * 2007-06-22 2009-01-08 Daishinku Corp Surface-mounting type piezoelectric vibration device
JP2010118979A (en) * 2008-11-14 2010-05-27 Nippon Dempa Kogyo Co Ltd Temperature detection type crystal oscillator for surface mounting, and mounting method with respect to set substrate
JP2010177732A (en) * 2009-01-27 2010-08-12 Epson Toyocom Corp Constant-temperature type piezoelectric oscillator

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145768A (en) * 1997-11-13 1999-05-28 Toyo Commun Equip Co Ltd Chip component composite piezoelectric device
JP2004320417A (en) * 2003-04-16 2004-11-11 Toyo Commun Equip Co Ltd Temperature compensated piezoelectric oscillator
JP2005286892A (en) * 2004-03-30 2005-10-13 Kyocera Kinseki Corp Piezoelectric vibrator with built-in temperature sensor and piezoelectric oscillator using the same
JP2006339943A (en) * 2005-06-01 2006-12-14 Seiko Epson Corp Piezoelectric device
JP2008205938A (en) * 2007-02-21 2008-09-04 Nippon Dempa Kogyo Co Ltd Crystal oscillator for surface mounting
JP2009005117A (en) * 2007-06-22 2009-01-08 Daishinku Corp Surface-mounting type piezoelectric vibration device
JP2010118979A (en) * 2008-11-14 2010-05-27 Nippon Dempa Kogyo Co Ltd Temperature detection type crystal oscillator for surface mounting, and mounting method with respect to set substrate
JP2010177732A (en) * 2009-01-27 2010-08-12 Epson Toyocom Corp Constant-temperature type piezoelectric oscillator

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685889B2 (en) 2011-03-11 2017-06-20 Seiko Epson Corporation Piezoelectric device and electronic apparatus
US9054604B2 (en) 2011-03-11 2015-06-09 Seiko Epson Corporation Piezoelectric device and electronic apparatus
US9160254B2 (en) 2011-03-11 2015-10-13 Seiko Epson Corporation Piezoelectric device and electronic apparatus
US8754718B2 (en) 2011-03-11 2014-06-17 Seiko Epson Corporation Piezoelectric device and electronic apparatus
US10715058B2 (en) 2011-03-11 2020-07-14 Seiko Epson Corporation Piezoelectric device and electronic apparatus
US10680158B2 (en) 2012-06-06 2020-06-09 Seiko Epson Corporation Resonator element, resonator, electronic device, electronic apparatus, mobile body and method of manufacturing resonator element
US11495727B2 (en) 2012-06-06 2022-11-08 Seiko Epson Corporation Resonator element, resonator, electronic device, electronic apparatus, mobile body and method of manufacturing resonator element
US9391586B2 (en) 2012-11-29 2016-07-12 Seiko Epson Corporation Resonator device, electronic device, and moving object
JP2014175998A (en) * 2013-03-12 2014-09-22 Kyocera Crystal Device Corp Crystal oscillator
US9264015B2 (en) 2013-10-30 2016-02-16 Seiko Epson Corporation Package, resonation device, oscillator, electronic device, and moving object
CN111600600A (en) * 2014-07-30 2020-08-28 精工爱普生株式会社 Vibration device, electronic apparatus, and moving object
CN111600600B (en) * 2014-07-30 2023-10-20 精工爱普生株式会社 Vibration device, electronic apparatus, and moving object
JP2018093551A (en) * 2018-03-19 2018-06-14 セイコーエプソン株式会社 Vibration element, vibrator, electronic device, electronic apparatus, mobile body, and manufacturing method of vibration element
JP2018093555A (en) * 2018-03-26 2018-06-14 京セラ株式会社 Crystal device and electronic equipment

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