JP2012076204A - Suction table - Google Patents

Suction table Download PDF

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JP2012076204A
JP2012076204A JP2010226093A JP2010226093A JP2012076204A JP 2012076204 A JP2012076204 A JP 2012076204A JP 2010226093 A JP2010226093 A JP 2010226093A JP 2010226093 A JP2010226093 A JP 2010226093A JP 2012076204 A JP2012076204 A JP 2012076204A
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stage
leak
suction
substrate
porous plate
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JP5092004B2 (en
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Yasutomo Okajima
康智 岡島
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to TW100126758A priority patent/TWI449120B/en
Priority to KR1020110092434A priority patent/KR101242420B1/en
Priority to CN201110290655.3A priority patent/CN102446799B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a suction table using a porous plate which can adjust the magnitude and distribution of a suction force acting on a substrate.SOLUTION: The suction table 10 includes: a table body 13 which is constituted of a stage 11 which is formed of a porous plate and on the upper surface 11a of which a substrate G is placed and a base 12, in which a hollow space 14 is formed, and which is configured so that the rear surface 11b of the stage faces the hollow space 14; and an evacuation mechanism 17 for reducing the pressure in the hollow space 14. The rear surface 11b of the stage is covered by a nonpermeable seal member 21 and leak holes 22 are formed at parts of the seal member 21. When the hollow space 14 is depressurized, leak occurs through the leak holes 22 and the porous plate.

Description

本発明は、真空吸着によって平板状の基板を固定する吸着テーブルに関し、さらに詳細には吸着面が多孔質材料で形成された吸着テーブルに関する。   The present invention relates to a suction table for fixing a flat substrate by vacuum suction, and more particularly to a suction table having a suction surface formed of a porous material.

真空吸着によって基板を固定する吸着テーブルは、さまざまな分野の基板加工装置で利用されている。例えば、大型のガラス基板や半導体基板（いわゆるマザー基板）の上に多数の電子部品をパターン形成し、これを個々の電子部品ごとに分断する基板加工装置では、カッターホイール等を用いたメカニカルスクライブやレーザビームを用いたレーザスクライブによって、基板にスクライブラインを形成する加工が行われる。その際に、所望の位置にスクライブラインを形成するために基板を位置決めして吸着テーブルで固定するようにしている。   A suction table for fixing a substrate by vacuum suction is used in substrate processing apparatuses in various fields. For example, in a substrate processing apparatus for patterning a large number of electronic components on a large glass substrate or semiconductor substrate (so-called mother substrate) and dividing the pattern into individual electronic components, mechanical scribing using a cutter wheel or the like Processing for forming a scribe line on the substrate is performed by laser scribing using a laser beam. At that time, in order to form a scribe line at a desired position, the substrate is positioned and fixed by a suction table.

基板加工装置に用いる吸着テーブルには、金属板に多数の吸着用の貫通孔を形成して吸着面としたタイプのテーブルと、多孔質板を吸着面としたタイプのテーブルとが知られている（特許文献１参照）。   As a suction table used for a substrate processing apparatus, a table having a suction surface by forming a large number of suction through holes in a metal plate and a table having a porous plate as a suction surface are known. (See Patent Document 1).

図８は金属板に多数の吸着用の貫通孔を形成したタイプの吸着テーブルの一例を示す断面図である。吸着テーブル５０は、上面５１ａ（吸着面となるステージ表面）に基板が載置される金属製のステージ５１と、ステージ５１をその周縁で支持するベース５２とを備えている。ステージ５１は、基板Ｇが載置される領域に、多数の貫通孔５３が格子状に形成してある。ステージ５１の直下には、中空空間５４が形成してあり、ステージ５１の裏面５１ｂが中空空間５４に面するようにしてある。そして、各貫通孔５３が中空空間５４に通じるようにしてある。   FIG. 8 is a cross-sectional view showing an example of a suction table of a type in which a large number of through holes for suction are formed on a metal plate. The suction table 50 includes a metal stage 51 on which a substrate is placed on an upper surface 51a (stage surface serving as a suction surface), and a base 52 that supports the stage 51 at its periphery. The stage 51 has a large number of through-holes 53 formed in a lattice pattern in the region where the substrate G is placed. A hollow space 54 is formed immediately below the stage 51, and the back surface 51 b of the stage 51 faces the hollow space 54. Each through hole 53 communicates with the hollow space 54.

ベース５２の中心にはプラグ５５が取り付けてあり、プラグ５５には中空空間５４に通じる流路５５ａが形成してある。プラグ５５は、さらに外部流路５６を介して真空ポンプ５７、エアー源５８に接続され、弁５９，６０の開閉によって中空空間５４を減圧状態にしたり、大気圧状態に戻したりできるようにしてある。   A plug 55 is attached to the center of the base 52, and a flow path 55 a communicating with the hollow space 54 is formed in the plug 55. The plug 55 is further connected to a vacuum pump 57 and an air source 58 via an external flow path 56 so that the hollow space 54 can be decompressed or returned to atmospheric pressure by opening and closing the valves 59 and 60. .

吸着テーブル５０では、基板Ｇがステージ５１上に載置されることによってすべての貫通孔５３が塞がれているときに強い吸着力が働くようになり、基板Ｇを安定して固定することができる。例えば、真空ポンプ５７で排気したときに貫通孔５３がすべて基板Ｇで塞がれると、中空空間５４の圧力はプラグ５５近傍に設けた圧力センサ６１でモニタすると、−６０ＫＰａ程度の圧力まで減圧されるが、基板Ｇを取り去ってすべての貫通孔５３を開放すると中空空間５４は−５ＫＰａ程度の圧力になる。したがってすべての貫通孔５３を塞ぐように基板Ｇを載置すれば、これら２つの状態間の圧力差（差圧約５５ＫＰａ程度）が各貫通孔５３を介して吸着力として働くようになる。なお、吸着テーブル５０の場合は、基板Ｇの位置がずれて貫通孔５３が１つでも開放されると、その開放された貫通孔から大きなリークが生じることになり、吸着力は一挙に弱まることになる。   In the suction table 50, when the substrate G is placed on the stage 51, a strong suction force works when all the through holes 53 are closed, and the substrate G can be stably fixed. it can. For example, if all the through holes 53 are closed by the substrate G when evacuated by the vacuum pump 57, the pressure in the hollow space 54 is reduced to a pressure of about −60 KPa when monitored by the pressure sensor 61 provided near the plug 55. However, when the substrate G is removed and all the through holes 53 are opened, the pressure in the hollow space 54 is about −5 KPa. Therefore, if the substrate G is placed so as to block all the through holes 53, a pressure difference between these two states (a differential pressure of about 55 KPa) will work as an adsorption force through each through hole 53. In the case of the suction table 50, if the position of the substrate G is shifted and even one through hole 53 is opened, a large leak will be generated from the opened through hole, and the suction force will be weakened at once. become.

一方、図９はセラミック製の多孔質板を吸着面に用いたタイプの吸着テーブルの一例を示す断面図である。
吸着テーブル７０では、図８における金属製のステージ５１に代えて、多孔質板からなるステージ７１が用いられる。多孔質板には多数の微細孔が含まれており、上面７１ａと下面７１ｂとの間で通気性を有している。なお、ステージ７１以外の各部分は、図５と同じ構成であるので、同符号を付して説明の一部を省略する。 On the other hand, FIG. 9 is a cross-sectional view showing an example of a suction table using a ceramic porous plate as a suction surface.
In the suction table 70, a stage 71 made of a porous plate is used instead of the metal stage 51 in FIG. The porous plate includes a large number of micropores and has air permeability between the upper surface 71a and the lower surface 71b. Since each part other than the stage 71 has the same configuration as in FIG. 5, the same reference numerals are given and a part of the description is omitted.

吸着テーブル７０では、真空ポンプ５７を作動すると中空空間５４が減圧状態になり、多孔質板全面の微細孔を介してリークが発生し、ステージ７１における上面７１ａのほぼ全面にて吸着できるようになる。そのため、上面７１ａのどこに基板Ｇを載置しても吸着する。しかし、多孔質板では微細孔を通過する気体の流れの抵抗が大きく、リーク量は小さいため、大きな吸着力は望めない。   In the suction table 70, when the vacuum pump 57 is operated, the hollow space 54 is in a reduced pressure state, a leak is generated through the fine holes on the entire surface of the porous plate, and suction can be performed on almost the entire upper surface 71 a of the stage 71. . Therefore, the substrate G is adsorbed wherever it is placed on the upper surface 71a. However, since the porous plate has a large resistance to the flow of gas passing through the micropores and a small leak amount, a large adsorption force cannot be expected.

例えば、真空ポンプ５７で排気したときに上面７１ａ全体（すなわち吸着面全体）を基板Ｇによって完全に塞ぐと、中空空間５４は圧力センサ６１で−６０ＫＰａ程度の圧力まで減圧されるが、基板Ｇを取り去って上面７１ａ全体を開放した場合でも微細孔によるリーク量は小さく、中空空間５４は−５５ＫＰａ程度の減圧状態になる。すなわち、多孔質板では小さな圧力差（差圧５ＫＰａ程度）しか吸着力として利用できないことになる。   For example, when the entire upper surface 71a (that is, the entire adsorption surface) is completely covered with the substrate G when the vacuum pump 57 is evacuated, the hollow space 54 is reduced to a pressure of about −60 KPa by the pressure sensor 61. Even when the entire upper surface 71a is removed, the amount of leakage due to the micropores is small, and the hollow space 54 is in a reduced pressure state of about -55 KPa. That is, only a small pressure difference (differential pressure of about 5 KPa) can be used as the adsorption force in the porous plate.

特開２０００−３３２０８７号公報JP 2000-332087 A

上述したように、後者の多孔質板を用いた吸着テーブル７０では、前者の吸着テーブル５０で貫通孔５３を介して得られるような強い吸着力を得ることはできない。吸着テーブル７０では、上面７１ａ（多孔質面）と基板Ｇとが接する面全体で吸着力が生じるので、上面７１ａと接する基板面積が増えれば吸着力は少しずつ増大する。そのため、上面７１ａに載置した基板Ｇを確実に固定するには、基板Ｇの面積を十分に大きくして基板Ｇ全体に働く吸着力が、基板を保持するために必要な力（基板保持力ともいう）よりも大きくなるようにしなければならなかった。   As described above, in the suction table 70 using the latter porous plate, it is not possible to obtain a strong suction force that can be obtained by the former suction table 50 through the through hole 53. In the adsorption table 70, an adsorption force is generated on the entire surface where the upper surface 71a (porous surface) and the substrate G are in contact with each other. Therefore, as the substrate area in contact with the upper surface 71a increases, the adsorption force gradually increases. Therefore, in order to securely fix the substrate G placed on the upper surface 71a, the adsorption force acting on the entire substrate G by sufficiently increasing the area of the substrate G is a force necessary for holding the substrate (substrate holding force). I had to make it bigger than that.

例えば、図９で示した吸着テーブル７０では、上面７１ａの上で、吸着力を発生させることができる領域の面積を吸着有効面積Ｓとすると、多孔質板の材質、特に気孔率にも依存するが、一般的なセラミック製の多孔質板の場合には、図１０に示すように、吸着有効面積Ｓの６０％以上（すなわち０．６Ｓ以上）を覆うように基板Ｇを載置しなければ、安定して基板を固定することができなかった。   For example, in the suction table 70 shown in FIG. 9, if the area of the region where the suction force can be generated on the upper surface 71a is the suction effective area S, it also depends on the material of the porous plate, particularly the porosity. However, in the case of a general ceramic porous plate, as shown in FIG. 10, the substrate G must be placed so as to cover 60% or more (that is, 0.6S or more) of the adsorption effective area S. The substrate could not be fixed stably.

そこで、本発明は多孔質板を吸着面に用いた吸着テーブルであって、これまでよりも吸着面に載置した基板に働く吸着力が強くなるように（あるいは逆に弱くなるように）調整することができるようにした構造の吸着テーブルを提供することを目的とする。   Therefore, the present invention is an adsorption table using a porous plate as an adsorption surface, and is adjusted so that the adsorption force acting on the substrate placed on the adsorption surface becomes stronger (or conversely weaker) than before. An object of the present invention is to provide a suction table having a structure that can be used.

また、本発明は、基板が載置されるステージの上面における吸着有効面積の１０％〜３０％を基板で覆うだけで、当該基板を安定して固定するのに十分な吸着力を得ることができる吸着テーブルを提供することを目的とする。   In addition, the present invention can obtain a sufficient suction force to stably fix the substrate only by covering 10% to 30% of the suction effective area on the upper surface of the stage on which the substrate is placed. An object of the present invention is to provide a suction table that can be used.

さらに、別の観点からなされた本発明は、多孔質板を用いた吸着テーブルで、多孔質内に生じるリークの流れの状態を変化させて、従来よりも吸着力を強めたり、逆に弱めたりすることで、吸着テーブルに載置した基板に対する吸着力の大きさや分布を調整することができるようにした吸着テーブルを提供することを目的とする。   Furthermore, the present invention made from a different point of view is an adsorption table using a porous plate, which changes the state of the flow of leaks generated in the porous material, so that the adsorption force can be strengthened or weakened compared to the conventional one. Thus, an object of the present invention is to provide a suction table capable of adjusting the magnitude and distribution of the suction force with respect to the substrate placed on the suction table.

上記課題を解決するためになされた本発明の吸着テーブルは、多孔質板で形成され上面に基板が載置されるステージと、ステージの周縁部分を支持するベースとからなり、内部に中空空間が形成されるとともに、ステージの裏面が中空空間に面するように構成されたテーブル本体と、中空空間を減圧する真空排気機構とを備えた吸着テーブルであって、ステージの裏面は、通気性のないシール部材で覆われるとともにシール部材の一部にリーク穴が形成され、中空空間を減圧状態にするとリーク穴から多孔質板を介してリークが生じるようにしてある。   The suction table of the present invention made to solve the above problems comprises a stage formed of a porous plate on which a substrate is placed, and a base that supports the peripheral portion of the stage, and has a hollow space inside. An adsorption table that is formed and includes a table body configured such that the back surface of the stage faces the hollow space and a vacuum exhaust mechanism that decompresses the hollow space, and the back surface of the stage has no air permeability While being covered with the seal member, a leak hole is formed in a part of the seal member, and when the hollow space is decompressed, a leak is generated from the leak hole through the porous plate.

本発明によれば、中空空間を真空排気して減圧状態にすると、シール部材の一部に形成されたリーク穴から多孔質板を介してリークが生じるようになる。リーク穴以外はシール部材で塞がれているので、これまでのように多孔質板全面（ステージ全面）で均一にリークが生じるのではなく、リーク穴からその上方領域に向かう局所的なリークが生じるようになる。その結果、多孔質板内のリークの発生状態（気体の流れ状態）が変化し、吸着力の大きさや分布が変化するようになって、これまでの吸着テーブル（例えば図９参照）と異なる分布で吸着力が得られるようになる。具体的には、吸着力が発生する領域はリーク穴の上方領域に集中するようになり、多孔質板であってもリーク穴を形成した近傍だけに吸着力を発生させることができるようになる。   According to the present invention, when the hollow space is evacuated to a reduced pressure state, a leak occurs from the leak hole formed in a part of the seal member through the porous plate. Since the seal holes other than the leak holes are closed, leaks do not occur uniformly over the entire porous plate (the entire stage surface) as before, but local leaks from the leak holes toward the upper region occur. It comes to occur. As a result, the leak generation state (gas flow state) in the porous plate changes, and the magnitude and distribution of the adsorption force change, so that the distribution differs from the conventional adsorption table (see, for example, FIG. 9). The adsorption power can be obtained. Specifically, the region where the adsorption force is generated is concentrated in the upper region of the leak hole, and even if it is a porous plate, the adsorption force can be generated only in the vicinity where the leak hole is formed. .

ここで、リーク穴はシール部材から深さ方向に延伸されて多孔質板にリーク穴の底が形成されるようにしてもよい。
リーク穴を深くすることで、リーク穴の底が多孔質板に形成されるようになると、多孔質板に形成されるリーク穴の表面積（穴の底面積と側面面積との和）に依存してリーク量が増大するようになり、また、多孔質板内での気体の流れの分布も変化するようになり、従来のシール部材とリーク穴とを設けていない多孔質板による吸着テーブルよりも吸着力を強くすることができる。 Here, the leak hole may be extended from the seal member in the depth direction so that the bottom of the leak hole is formed in the porous plate.
If the bottom of the leak hole is formed in the porous plate by deepening the leak hole, it depends on the surface area of the leak hole formed in the porous plate (the sum of the bottom area and the side area of the hole). As a result, the amount of leakage increases, and the distribution of gas flow in the porous plate also changes. Compared to the conventional suction table using a porous plate that does not have a sealing member and leak holes The adsorption power can be increased.

ここで、リーク穴の底の深さは多孔質板の板厚の１０％〜５０％であるのが好ましい。
多孔質板に形成されるリーク穴の深さがこれより浅いと、吸着力が生じる領域の分布を調整することはできるがリーク量が少なくなって吸着力は小さくなる。リーク穴の深さがこれより深いと、ほぼ上面全体で吸着力が働くようになるが、リーク量も過大になり、基板の種類によっては強すぎる吸着力が基板に衝撃を与えたりして悪影響を与えてしまうおそれがある。それゆえ、リーク穴の底の深さは多孔質板の板厚の１０％〜５０％であれば、リーク穴を形成していない多孔質板に比べて大きな吸着力が得られるとともに適度な吸着力が得られるようになり、バランスがとれた吸着力の吸着テーブルとなる。 Here, the depth of the bottom of the leak hole is preferably 10% to 50% of the thickness of the porous plate.
If the depth of the leak hole formed in the porous plate is shallower than this, the distribution of the region in which the suction force is generated can be adjusted, but the leak amount is reduced and the suction force is reduced. If the depth of the leak hole is deeper than this, the adsorption force will work on almost the entire top surface, but the leak amount will be excessive, and depending on the type of substrate, the adsorption force that is too strong will impact the substrate and adversely affect it. There is a risk of giving. Therefore, if the depth of the bottom of the leak hole is 10% to 50% of the plate thickness of the porous plate, a large adsorbing force can be obtained and a moderate adsorption can be obtained compared to a porous plate in which no leak hole is formed. As a result, a suction table with a balanced suction force can be obtained.

上記発明において、リーク穴はステージの裏面に格子状に複数形成されるのが好ましい。これにより、ステージの全体にわたってほぼ均一に基板を吸着することができる。   In the above invention, it is preferable that a plurality of leak holes are formed in a lattice pattern on the back surface of the stage. Thereby, a board | substrate can be adsorb | sucked substantially uniformly over the whole stage.

上記発明において、リーク穴はステージの裏面に複数形成されるとともに、リーク穴の分布、リーク穴の単位面積当たりの数、リーク穴の深さ、リーク穴の径の少なくともいずれかが不均一になるようにして、吸着力が不均一に働くようにしてもよい。
リーク量を不均一な分布にすることで、吸着力もステージに対し不均一に与えることができるようになる。例えば、中央と周囲とで吸着力を変化させたり、ステージの一部に強い吸着力を与えたりすることができるようになる。 In the above invention, a plurality of leak holes are formed on the back surface of the stage, and at least one of the distribution of leak holes, the number of leak holes per unit area, the depth of leak holes, and the diameter of leak holes becomes non-uniform. In this way, the suction force may work unevenly.
By making the leak amount non-uniformly distributed, the suction force can be applied non-uniformly to the stage. For example, the suction force can be changed between the center and the periphery, or a strong suction force can be applied to a part of the stage.

本発明にかかる吸着テーブルの一実施例を示す断面図である。It is sectional drawing which shows one Example of the adsorption | suction table concerning this invention. 図１における吸着テーブルの平面図である。It is a top view of the adsorption | suction table in FIG. 本発明の吸着テーブルに用いるステージの加工手順を示す工程図である。It is process drawing which shows the process sequence of the stage used for the adsorption | suction table of this invention. リーク穴２２によるステージの吸着状態を模式的に示した図である。It is the figure which showed typically the adsorption state of the stage by the leak hole. リーク穴２３の深さを５ｍｍ程度にしたときのステージの吸着状態を模式的に示した図である。It is the figure which showed typically the adsorption state of the stage when the depth of the leak hole 23 was about 5 mm. リーク穴２３の深さを１５ｍｍ程度にしたときのステージの吸着状態を模式的に示した図である。It is the figure which showed typically the adsorption state of the stage when the depth of the leak hole 23 was about 15 mm. リーク穴２３の深さをステージの左右で変化させたときのステージの吸着状態を模式的に示した図である。It is the figure which showed typically the adsorption state of the stage when the depth of the leak hole 23 is changed on the right and left of the stage. 金属板に多数の吸着用の貫通孔を形成したタイプの吸着テーブルの一例を示す断面図である（従来例）。It is sectional drawing which shows an example of the type of adsorption table which formed many through-holes for adsorption | suction in the metal plate (conventional example). 多孔質板を吸着面に用いたタイプの吸着テーブルの一例を示す断面図である（従来例）。It is sectional drawing which shows an example of the type of adsorption table which used the porous board for the adsorption | suction surface (conventional example). 図９の従来型の吸着テーブルで基板を安定して固定するために必要な基板面積を示す図である（従来例）。It is a figure which shows a board | substrate area required in order to fix a board | substrate stably with the conventional suction table of FIG. 9 (conventional example).

以下において本発明にかかる吸着テーブルの詳細をその実施の形態を示す図面に基づいて詳細に説明する。
図１は、本発明にかかる吸着テーブルの一実施例を示す断面図であり、図２はその平面図である。 Details of the suction table according to the present invention will be described below in detail with reference to the drawings showing embodiments thereof.
FIG. 1 is a sectional view showing an embodiment of a suction table according to the present invention, and FIG. 2 is a plan view thereof.

吸着テーブル１０は、上面１１ａ（ステージ表面）に基板Ｇが載置される方形のステージ１１と、ステージ１１をその周縁で当接するようにして支持するベース１２とからなるテーブル本体１３を備えている。本実施形態ではステージ１１の周縁の下面１１ｃでベース１２に支持されているが、図９で説明したステージ７１と同様に、ステージ周縁の側面がベースに支持されるようにしてもよい。いずれの場合も接触面は密着するようにして境界面からリークが生じないようにしてあればよい。   The suction table 10 includes a table body 13 including a rectangular stage 11 on which a substrate G is placed on an upper surface 11a (stage surface), and a base 12 that supports the stage 11 so as to abut on the periphery thereof. . In this embodiment, the lower surface 11c of the peripheral edge of the stage 11 is supported by the base 12, but the side surface of the peripheral edge of the stage may be supported by the base in the same manner as the stage 71 described in FIG. In any case, it is sufficient that the contact surface is in close contact so that no leakage occurs from the boundary surface.

ステージ１１はセラミック製の多孔質板で形成され、裏面１１ｂにはシール部材２１が固着されるとともにシール穴２３（２２）が一定ピッチで格子状に形成されている。これらの詳細については後述する。ステージ１１およびベース１２の周縁を除いた内側部分には、ステージ１１の下面およびベース１２の上面に凹部が加工されることによって中空空間１４が形成してあり、ステージ１１の裏面１１ｂ（内側部分の下面）が中空空間１４に面するようにしてある。なお中空空間１４はステージ１１側だけに凹部を加工するようにして設けてもよいし、ベース１２側だけに凹部を加工するようにして設けてもよい。   The stage 11 is formed of a ceramic porous plate, and a seal member 21 is fixed to the back surface 11b and seal holes 23 (22) are formed in a lattice pattern at a constant pitch. Details of these will be described later. A hollow space 14 is formed in the inner portion excluding the peripheral edges of the stage 11 and the base 12 by processing recesses on the lower surface of the stage 11 and the upper surface of the base 12. The lower surface faces the hollow space 14. The hollow space 14 may be provided so as to process a recess only on the stage 11 side, or may be provided so as to process a recess only on the base 12 side.

ベース１２の中心にはプラグ１５が取り付けてあり、プラグ１５には中空空間１４に通じる流路１５ａが形成してある。プラグ１５はさらに外部流路１６を介して真空ポンプ１７、エアー源１８に接続され、弁１９を開くことによって中空空間１４を減圧状態にしたり、弁３０を開くことによって大気圧状態に戻したりできるようにしてある。   A plug 15 is attached to the center of the base 12, and a flow path 15 a communicating with the hollow space 14 is formed in the plug 15. The plug 15 is further connected to a vacuum pump 17 and an air source 18 via an external flow path 16, and the hollow space 14 can be reduced in pressure by opening the valve 19, or returned to atmospheric pressure by opening the valve 30. It is like that.

プラグ１５の近傍の外部流路１６には圧力センサ３１が取り付けてあり、中空空間１４の圧力がモニタできるとともに、予め閾値を設定しておくことで、基板Ｇを安定して固定するために必要な基板保持力が確保できているか否かの判定を行う真空スイッチとして使用できるようにしてある。   A pressure sensor 31 is attached to the external flow path 16 in the vicinity of the plug 15 so that the pressure in the hollow space 14 can be monitored and a threshold value is set in advance so that the substrate G can be stably fixed. It can be used as a vacuum switch for determining whether or not a sufficient substrate holding force can be secured.

次に、ステージ１１の裏面１１ｂの加工について説明する。図３は多孔質板からなるステージ１１の加工手順を示す図である。
まず、図３（ａ）に示すように、基板が載置される表面１１ａは平坦面になるように加工し、反対側には裏面１１ｂと周縁の下面１１ｃとからなる凹部を形成する。
続いて、図３（ｂ）に示すように、裏面１１ｂを覆うようにシール部材２１を固着する。具体的には、ステージ１１の裏面１１ｂ全体を覆うように、接着剤として用いられるエポキシ樹脂をシール部材２１として塗布する。なお、シール部材２１は多孔質部材の通気性を遮断できる材料であれば特に限定されない。
続いて、図３（ｃ）に示すように、形成されたシール部材２１に対し、リーク穴２２を形成する。本実施形態ではリーク穴２２は一定ピッチで裏面１１ｂの全体にわたって正方格子状に形成する。
続いて、図３（ｄ）に示すように、リーク穴２２をステージ１１の深さ方向に向けて加工し、ステージ１１の内部に達するリーク穴２３（貫通はしない）を形成する。具体的にはドリル加工やレーザアブレーション加工により、所望の深さのリーク穴２３を形成する。 Next, processing of the back surface 11b of the stage 11 will be described. FIG. 3 is a diagram showing a processing procedure of the stage 11 made of a porous plate.
First, as shown in FIG. 3A, the front surface 11a on which the substrate is placed is processed so as to be a flat surface, and a recess composed of a back surface 11b and a peripheral lower surface 11c is formed on the opposite side.
Subsequently, as shown in FIG. 3B, the seal member 21 is fixed so as to cover the back surface 11b. Specifically, an epoxy resin used as an adhesive is applied as the seal member 21 so as to cover the entire back surface 11 b of the stage 11. The seal member 21 is not particularly limited as long as it is a material that can block the air permeability of the porous member.
Subsequently, as shown in FIG. 3C, a leak hole 22 is formed in the formed seal member 21. In the present embodiment, the leak holes 22 are formed in a square lattice shape over the entire back surface 11b at a constant pitch.
Subsequently, as shown in FIG. 3D, the leak hole 22 is processed in the depth direction of the stage 11 to form a leak hole 23 (not penetrating) reaching the inside of the stage 11. Specifically, the leak hole 23 having a desired depth is formed by drilling or laser ablation.

ステージ１１に形成されるリーク穴の好ましい深さは、板厚の１０％〜５０％である。例えば板厚が２０ｍｍであるとすると２ｍｍ〜１０ｍｍの深さにすれば、バランスのよい吸着力にすることができる。すなわち、ステージ１１の有効吸着面積の１０％〜３０％の面積を有する基板を、確実に固定することができるようになる。   A preferable depth of the leak hole formed in the stage 11 is 10% to 50% of the plate thickness. For example, if the plate thickness is 20 mm, a well-balanced adsorption force can be obtained by setting the depth to 2 mm to 10 mm. That is, the substrate having an area of 10% to 30% of the effective adsorption area of the stage 11 can be fixed securely.

なお、ステージ１１を貫通しないようにする限り、これよりも深いシール穴２３を形成してもよいし、シール部材２１だけを貫通するシール穴２２にしてもよい。それぞれ特徴のある分布で吸着力を生じるようになる。
また、リーク穴の好ましい穴径は、多孔質板の材質、リーク穴深さなどの他のパラメータにも依存するが、０．５ｍｍ〜５ｍｍであればよい。 In addition, as long as it does not penetrate the stage 11, the seal hole 23 deeper than this may be formed, or the seal hole 22 that penetrates only the seal member 21 may be formed. Adsorption force is generated with a characteristic distribution.
Moreover, although the preferable hole diameter of a leak hole is dependent also on other parameters, such as a material of a porous board and leak hole depth, it should just be 0.5 mm-5 mm.

図４〜図６はリーク穴２２，２３の深さの違いによる吸着状態の変化を模式的に示した図である。   4 to 6 are diagrams schematically showing changes in the adsorption state due to differences in the depths of the leak holes 22 and 23. FIG.

図４は、シール部材２１だけを貫通するリーク穴２２を形成したときの吸着状態であり、図５はステージ１１で深さ５ｍｍ程度（板厚２０ｍｍの２５％）のリーク穴２３を形成したときの吸着状態であり、図６はステージ１１で深さ１５ｍｍ程度（板厚２０ｍｍの７５％）のリーク穴を形成したときの吸着状態である。穴径はいずれも３ｍｍである。
いずれも、（ａ）はステージ１１の断面の模式図であり、気流の流れが生じている範囲を実線で示している。また、（ｂ）はステージ１１の上面１１ａの模式図であり、吸着力が生じている領域をＡ，Ｂ，Ｃで示している。 FIG. 4 shows the suction state when the leak hole 22 penetrating only the seal member 21 is formed, and FIG. 5 shows the case where the leak hole 23 having a depth of about 5 mm (25% of the plate thickness of 20 mm) is formed on the stage 11. FIG. 6 shows the suction state when a leak hole having a depth of about 15 mm (75% of the plate thickness of 20 mm) is formed on the stage 11. Both hole diameters are 3 mm.
In either case, (a) is a schematic diagram of a cross section of the stage 11, and the range in which airflow is generated is indicated by a solid line. Moreover, (b) is a schematic diagram of the upper surface 11a of the stage 11, and regions A, B, and C in which an attractive force is generated are indicated.

シール部材２１にリーク穴２２を開けただけの場合は、図４で示されるように、リーク量が限られ、リーク穴２２の直上の領域Ａだけに吸着力が作用する。この場合は、例えば非常に脆い基板を弱い吸着力で吸着させたい場合などに利用できる。   When only the leak hole 22 is opened in the seal member 21, as shown in FIG. 4, the leak amount is limited, and the adsorption force acts only on the region A immediately above the leak hole 22. In this case, for example, it can be used when a very fragile substrate is to be adsorbed with a weak adsorbing force.

穴底が多孔質板に至るリーク穴２３をあけた場合は、図５に示されるように、吸着領域Ｂはかなり広がり、しかもリーク穴２３の直上の位置では多孔質の板厚が薄くなっているので流れの抵抗が小さくなって吸着力も増大している。この場合は、基板Ｇの面積がステージ１１の吸着有効面積Ｓの１０％〜３０％程度であっても確実に吸着できるようになっている。   When the leak hole 23 where the hole bottom reaches the porous plate is formed, as shown in FIG. 5, the adsorption region B is considerably widened, and the porous plate thickness is thin at a position immediately above the leak hole 23. As a result, the flow resistance is reduced and the attractive force is also increased. In this case, even if the area of the substrate G is about 10% to 30% of the adsorption effective area S of the stage 11, it can be reliably adsorbed.

穴底が多孔質板の板厚の５０％以上の深さになるまでリーク穴を深くした場合は、図６に示されるように、吸着領域Ｃはさらに広がり、ステージ１１の吸着有効面積のほぼ全面で強く吸着されるようになっている。   When the leak hole is deepened until the hole bottom reaches a depth of 50% or more of the thickness of the porous plate, the adsorption region C further expands as shown in FIG. It is strongly adsorbed on the entire surface.

以上本発明の代表的な実施例について説明したが、本発明は必ずしも上記の実施形態に特定されるものでなく、その目的を達成し、請求の範囲を逸脱しない範囲内で適宜修正、変更することが可能である。   Although typical examples of the present invention have been described above, the present invention is not necessarily limited to the above-described embodiments. The present invention achieves its purpose and appropriately modifies and changes within the scope of the claims. It is possible.

例えば、これまでは、ステージ１１の上面１１ａで，できるだけ均一な分布になるように格子状に吸着力が働くようにしていたが、これとは反対に、リーク穴の分布、リーク穴の単位面積当たりの数、リーク穴の深さ、リーク穴の径などのパラメータが不均一になるようにして、吸着力が不均一に働くようにすることもできる。
図７は、リーク穴２３の深さ分布を不均一にした例である。本実施形態では左側半分を図５で説明したリーク穴２３とし、右側半分を図４で説明したリーク穴２２としている。これにより、スクライブラインに沿って基板Ｇの左側を強く吸着し、右側を弱く吸着させた状態で加工することができるようになり、基板Ｇに外力が加わったときに右側が逃げやすくすることで過大な負荷がかからないようにすることができる。
リーク穴の深さを不均一にするだけではなく、穴径を不均一にしてもよいし、穴数を不均一にしてもよい。また、リーク穴の分布、リーク穴の単位面積当たりの数を不均一にしても同様の効果を得ることができるようになる。 For example, up to now, the suction force is applied in a lattice shape so as to be as uniform as possible on the upper surface 11a of the stage 11, but on the contrary, the distribution of leak holes and the unit area of the leak holes Parameters such as the number of hits, the depth of the leak hole, the diameter of the leak hole, and the like can be made non-uniform so that the suction force works non-uniformly.
FIG. 7 shows an example in which the depth distribution of the leak holes 23 is not uniform. In the present embodiment, the left half is the leak hole 23 described in FIG. 5, and the right half is the leak hole 22 described in FIG. As a result, the left side of the substrate G can be strongly adsorbed along the scribe line and the right side can be weakly adsorbed so that the right side can easily escape when an external force is applied to the substrate G. An excessive load can be avoided.
In addition to making the depth of the leak hole non-uniform, the hole diameter may be made non-uniform and the number of holes may be made non-uniform. Further, even if the distribution of leak holes and the number of leak holes per unit area are not uniform, the same effect can be obtained.

また、これ以外にも、ステージ１１の中央と、外側とでリーク穴を不均一にして吸着力を変化させたりしてもよい。   In addition, the suction force may be changed by making the leak holes non-uniform between the center and the outside of the stage 11.

本発明の吸着テーブルは、基板加工装置で基板を固定するテーブルとして利用することができる。   The suction table of the present invention can be used as a table for fixing a substrate by a substrate processing apparatus.

Ｇ 基板
１０ 吸着テーブル
１１ ステージ（多孔質板）
１１ａ 上面
１１ｂ 裏面
１２ ベース
１３ テーブル本体
１４ 中空空間
１５ プラグ
１６ 外部流路
１７ 真空ポンプ（真空排気機構）
１８ エアー源
２１ シール部材
２２ リーク穴
２３ リーク穴
３１ 圧力センサ G substrate 10 suction table 11 stage (porous plate)
11a Upper surface 11b Back surface 12 Base 13 Table body 14 Hollow space 15 Plug 16 External flow path 17 Vacuum pump (evacuation mechanism)
18 Air source 21 Seal member 22 Leak hole 23 Leak hole 31 Pressure sensor

Claims (5)

多孔質板で形成され上面に基板が載置されるステージと、前記ステージの周縁部分を支持するベースとからなり、内部に中空空間が形成されるとともに、前記ステージの裏面が前記中空空間に面するように構成されたテーブル本体と、
前記中空空間を減圧する真空排気機構とを備えた吸着テーブルであって、
前記ステージの裏面は、通気性のないシール部材で覆われるとともに前記シール部材の一部にリーク穴が形成され、
中空空間を減圧状態にすると前記リーク穴から多孔質板を介してリークが生じるようにしたことを特徴とする吸着テーブル。 It comprises a stage formed of a porous plate and on which a substrate is placed, and a base that supports the peripheral portion of the stage. A hollow space is formed inside, and the back surface of the stage faces the hollow space. A table body configured to, and
An adsorption table comprising a vacuum exhaust mechanism for depressurizing the hollow space,
The back surface of the stage is covered with a non-breathable sealing member and a leak hole is formed in a part of the sealing member,
An adsorption table characterized in that when the hollow space is decompressed, a leak occurs from the leak hole through a porous plate. 前記リーク穴はシール部材から深さ方向に延伸されて多孔質板にリーク穴の底が形成されてなる請求項１に記載の吸着テーブル。 The suction table according to claim 1, wherein the leak hole is extended in a depth direction from the seal member, and a bottom of the leak hole is formed in the porous plate. 前記リーク穴の底の深さは多孔質板の板厚の１０％〜５０％である請求項１に記載の吸着テーブル。 The suction table according to claim 1, wherein the depth of the bottom of the leak hole is 10% to 50% of the thickness of the porous plate. 前記リーク穴はステージの裏面に格子状に複数形成される請求項１に記載の吸着テーブル。 The suction table according to claim 1, wherein a plurality of the leak holes are formed in a lattice shape on the back surface of the stage. 前記リーク穴はステージの裏面に複数形成されるとともに、リーク穴の分布、リーク穴の単位面積当たりの数、リーク穴の深さ、リーク穴の径の少なくともいずれかが不均一になるようにして、吸着力を不均一に働かせるようにした請求項１に記載の吸着テーブル。   A plurality of the leak holes are formed on the back surface of the stage, and at least one of the distribution of leak holes, the number of leak holes per unit area, the depth of the leak holes, and the diameter of the leak holes is not uniform. The suction table according to claim 1, wherein the suction force is applied unevenly.
JP2010226093A 2010-10-05 2010-10-05 Suction table Expired - Fee Related JP5092004B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010226093A JP5092004B2 (en) 2010-10-05 2010-10-05 Suction table
TW100126758A TWI449120B (en) 2010-10-05 2011-07-28 Adsorption platform
KR1020110092434A KR101242420B1 (en) 2010-10-05 2011-09-14 Suction table
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JP2014203904A (en) * 2013-04-03 2014-10-27 株式会社ナノテム Vacuum suction device and suction plate
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JP2014203904A (en) * 2013-04-03 2014-10-27 株式会社ナノテム Vacuum suction device and suction plate
JP2015217415A (en) * 2014-05-16 2015-12-07 川崎重工業株式会社 Suction surface plate and weld robot system
JP2018041799A (en) * 2016-09-06 2018-03-15 株式会社ディスコ Chuck table, method of forming porous ceramic constituting chuck table, and suction holding system
JP2019016627A (en) * 2017-07-03 2019-01-31 日本特殊陶業株式会社 Vacuum suction member
JP2020115238A (en) * 2020-04-17 2020-07-30 堺ディスプレイプロダクト株式会社 Manufacturing method and manufacturing apparatus for flexible light emitting device
JP2023029222A (en) * 2021-08-18 2023-03-03 トゥエンティファーストティーエイチ センチュリー カンパニー リミテッド Method for machining micro-holes in thin-film-sheet-stacking upper mold by using femtosecond laser
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TWI449120B (en) 2014-08-11
KR20120035853A (en) 2012-04-16

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