CN102446799B - Suction table - Google Patents
Suction table Download PDFInfo
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- CN102446799B CN102446799B CN201110290655.3A CN201110290655A CN102446799B CN 102446799 B CN102446799 B CN 102446799B CN 201110290655 A CN201110290655 A CN 201110290655A CN 102446799 B CN102446799 B CN 102446799B
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- leak
- microscope carrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The present invention relates to a suction table with a porous plate, which has a structure that can adjust magnitude or arrangement of an absorption force that is applied on the substrate. The suction table (10) comprises the following components: a carrier platform table (13) which is composed of a carrier platform (11) that is made of porous plate and carries the substrate (G) on an upper surface (11a) and a base, and is formed through a mode that a hollow space (14) is formed at inner part and back surface (11b) of the carrier platform faces the hollow space (14); and a vacuum exhausting mechanism (17) which decompresses the hollow space (14). The back surface (11b) of the carrier platform is covered by a non-ventilated sealing component (21). Furthermore one part of the sealing component is provided with leaking holes (22). If the hollow space (14) is changed to a decompression state, leakage occurs from the leaking holes (22) through the porous plate.
Description
Technical field
The invention relates to a kind of by vacuum suction by absorptive table fixing for flat substrate, more specifically the invention relates to the absorptive table that a kind of adsorption plane is formed by porous material.
Background technology
The absorptive table fixed by substrate by vacuum suction utilizes in the base plate processing device in various field.Such as, large-scale glass substrate or semiconductor substrate (so-called mother substrate) are carrying out pattern formation to multiple electronic component, and pressed in the base plate processing device of each electronic component disjunction, by using the mechanical scratching of break bar etc. or using the laser of thunder laser beam to delineate, and carry out the processing forming line on substrate.Now, for forming line in desired location, and substrate is positioned and utilizes absorptive table to be fixed by substrate.
For in the absorptive table of base plate processing device, there will be a known the through hole that forms multiple absorption on a metal plate and it can be used as the type of adsorption plane absorptive table and using the absorptive table (with reference to patent documentation 1) of porous scutum as the type of adsorption plane.
Fig. 8 represents the profile of an example of the absorptive table of the type of the through hole being formed with multiple absorption on a metal plate.Absorptive table 50 is included in the metal microscope carrier 51 51a above (becoming the microscope carrier surface of adsorption plane) being placed with substrate, with the base 52 supporting microscope carrier 51 at its periphery.Microscope carrier 51, in the region being placed with substrate G, is formed with multiple through hole 53 in clathrate.Place is close in the below of microscope carrier 51, is formed with hollow space 54, is set to the back side 51b of microscope carrier 51 towards hollow space 54.And, the sensible hollow space 54 of each through hole 53.
The center of base 52 is provided with connector 55, is formed with the stream 55a of sensible hollow space 54 in connector 55.Connector 55 and then be connected to vacuum pump 57, air-source 58 via outside stream 56, can be set to decompression state by the opening and closing of valve 59,60, or make it be back to atmospheric pressure state by hollow space 54.
In absorptive table 50, play stronger absorption affinity by when being positioned in by substrate G and microscope carrier 51 blocking all through holes 53, Absorbable organic halogens ground fixing base G.Such as, if all through holes 53 are all blocked by substrate G when utilizing vacuum pump 57 to be vented, the pressure sensor 61 be arranged near connector 55 is utilized to monitor, the pressure of hollow space 54 is to the pressure of about-60KPa, if the open all through holes 53 of removing substrate G, hollow space 54 becomes the pressure of about-5KPa.Therefore, as long as load substrate G in the mode of blocking all through holes 53, then the pressure differential (differential pressure is about about 55KPa) between those 2 states becomes via each through hole 53 and plays absorption affinity.Moreover when the situation of absorptive table 50, if even if open 1 through hole 53 because of the position skew of substrate G, then produce larger leakage from the through hole opened, absorption affinity dies down quickly.
On the other hand, Fig. 9 is the profile that display adsorption plane uses an example of the absorptive table of the type of the porous scutum of pottery system.
In absorptive table 70, use the metal microscope carrier 51 that the microscope carrier 71 be made up of porous scutum replaces in Fig. 8.Containing multiple fine holes in porous scutum, and above 71a and between 71b, there is gas permeability below.Moreover each several part except microscope carrier 71 is the formation identical with Fig. 8, therefore mark same-sign and clipped explanation.
In absorptive table 70, if make vacuum pump 57 operate, hollow space 54 becomes decompression state, produces leakage via the fine holes of whole of porous scutum, and becoming can roughly whole the absorption of 71a above of microscope carrier 71.Therefore, no matter where substrate G being placed in 71a above is all adsorbed.But, comparatively large by the resistance of the flowing of the gas of fine holes in porous scutum, leakage rate is less, therefore larger absorption affinity cannot be expected.
Such as, if the entirety (adsorption plane is all) of 71a is blocked by substrate G completely above when utilizing vacuum pump 57 to be vented, although hollow space 54 is with pressure sensor 61 till being decompressed to the pressure of about-60KPa, but above open removing substrate G during the situation of 71a entirety, the leakage rate of fine holes is less, and hollow space 54 becomes the decompression state of about-55KPa.That is, porous scutum can only by less pressure differential (about differential pressure 5KPa) as absorption affinity.
[prior art document]
[patent documentation]
Patent documentation 1: Japanese Unexamined Patent Publication 2000-332087 publication
Summary of the invention
[invention institute for solution problem]
As above, in the absorptive table 70 of the use porous scutum of the latter, cannot obtain as in the former absorptive table 50 via the obtainable strong absorption affinity of through hole 53.In absorptive table 70, because producing absorption affinity above in substrate G is with whole that 71a (Porous face) contacts, as long as therefore increase the substrate area that contact with 71a above then absorption affinity understand a little and increase.Therefore, for positively being fixed by the substrate G being placed in 71a above, the area that fully must increase substrate G is greater than for keeping the necessary power of substrate (also can be described as substrate confining force) to make the absorption affinity acting on substrate G entirety.
Such as, in the absorptive table 70 shown in Fig. 9, on 71a above, if the area in the region that absorption affinity can be made to produce is as absorption effective area S, though then also depend on the material of porous scutum, especially porosity, when the situation of the porous scutum of general pottery, as shown in Figure 10, if do not load substrate G in the mode of more than 60% (i.e. more than the 0.6S) covering absorption effective area S, then cannot stably fixing base.
Therefore, the object of the present invention is to provide a kind of adsorption plane to use the absorptive table of porous scutum, it has the structure that the mode that can be better than (or being weaker than on the contrary) absorption affinity up to now with the absorption affinity acting on the substrate being placed in adsorption plane carries out adjusting.
Again, the object of the present invention is to provide a kind of absorptive table, its by only with substrate cover be placed with the microscope carrier of substrate above in absorption effective area 10% ~ 30% can obtain the sufficient absorption affinity of stably fixing needed for this substrate.
And then, a kind of absorptive table is the object of the present invention is to provide from other viewpoint researchs, it is in the absorptive table using porous scutum, the state of the flowing of the leakage resulted from Porous is changed, make absorption affinity be better than previously or make absorption affinity be weaker than previously on the contrary, adjustable is to the size of absorption affinity of substrate or the distribution that are placed in absorptive table by this.
[means of dealing with problems]
For solving the problem and the absorptive table of the present invention completed, it comprises by be formed with porous scutum and the microscope carrier loading substrate is above formed with the base of the peripheral part supporting microscope carrier, and is formed with hollow space with inside and the microscope carrier body that formed towards the mode of hollow space of the back side of microscope carrier and the vacuum exhaust mechanism that reduces pressure to hollow space; The back side of microscope carrier covers with the containment member without gas permeability and be formed with leak in a part for containment member, if make hollow space become decompression state, produces leakage from leak via porous scutum.
[effect of invention]
According to the present invention, if carry out vacuum exhaust to hollow space and become decompression state, then the leak that idiomorphism is formed in a part for containment member produces leakage via porous scutum.Because the part beyond leak is blocked by containment member, therefore not as up to now, on whole of porous scutum (the whole face of microscope carrier), produce leakage equably, but produce towards the leakage of the local of its upper area from leak.Its result is, the generation state (flow regime of gas) of the leakage in porous scutum changes, and the size of absorption affinity or distribution change, and obtain absorption affinity with the distribution different from absorptive table (such as with reference to Fig. 9) up to now.Specifically, the generation region of absorption affinity is the upper area concentrating on leak, even if be the neighbouring generation absorption affinity that porous scutum also only can make formation leak.
Herein, leak also can extend to depth direction and forms the end of leak at porous scutum by self sealss component.
If form the end of leak at porous scutum by deepening leak, then leakage rate depends on the surface area (floor space in hole and lateralarea and) of the leak that porous scutum is formed and increases, again, the distribution of the flowing of the gas in porous scutum also changes, and does not arrange containment member can strengthen absorption affinity with previous compared with the absorptive table of the porous scutum of leak.
Herein, the degree of depth at the end of leak is preferably 10% ~ 50% of the thickness of slab of porous scutum.
If the degree of depth being formed at the leak of porous scutum is shallow compared with this, though then adjustable produces the distribution in the region of absorption affinity, leakage rate tails off and absorption affinity diminishes.If the degree of depth of leak is dark compared with this, then absorption affinity acts on above roughly whole, and leakage rate also becomes excessive, and different according to the kind of substrate, excessively strong absorption affinity is likely brought impact to substrate and makes a very bad impression.Therefore, as long as the degree of depth at the end of leak is 10% ~ 50% of the thickness of slab of porous scutum, just can obtain the absorption affinity being greater than the porous scutum not forming leak, and the absorption affinity of appropriateness can be obtained, and become the absorptive table of absorption affinity maintenance balance.
In the present invention as stated above, being preferably leak is formed multiple in the back side of microscope carrier in lattice shape.By this, can throughout the entirety of microscope carrier sorbing substrate roughly equably.
In the present invention as stated above, leak also can be formed multiple at the back side of microscope carrier, and make in the footpath of the distribution of leak, the number of the per unit area of leak, the degree of depth of leak, leak at least any one becomes uneven, thus absorption affinity is acted on unevenly.
Be set to uneven distribution by by leakage rate, absorption affinity also can be applied to microscope carrier unevenly.Such as, absorption affinity can be made to change in central authorities with surrounding or stronger absorption affinity can be applied to a part for microscope carrier.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Fig. 1 represents the profile of an embodiment of absorptive table of the present invention.
Fig. 2 is the plane graph of the absorptive table in Fig. 1.
Fig. 3 represents the block diagram of the processing sequence of the microscope carrier for absorptive table of the present invention.
Fig. 4 represents the figure of the adsorbed state of the microscope carrier utilizing leak 22.
Fig. 5 represents the figure of the adsorbed state of the microscope carrier when degree of depth of leak 23 being set to about 5mm.
Fig. 6 represents the figure of the adsorbed state of the microscope carrier when degree of depth of leak 23 being set to about 15mm.
Fig. 7 represents the figure of the adsorbed state making the microscope carrier of the degree of depth of leak 23 when the left and right of microscope carrier changes.
Fig. 8 represents the profile (first precedent) of an example of the absorptive table of the type forming multiple absorption through hole on a metal plate.
Fig. 9 represents the profile (first precedent) using an example of the absorptive table of the type of porous scutum at adsorption plane.
Figure 10 is expressed as the figure (first precedent) utilizing the absorptive table of the previous types of Fig. 9 substrate stably to be fixed required substrate area.
G: substrate P, 31,61: pressure sensor
10,50,70: absorptive table 11,51,71: microscope carrier (porous scutum)
11a, 51a, 71a: 11b, 51b above: the back side
11c, 71b: below 12,52: base
13: microscope carrier body 14,54: hollow space
15,55: connector 15a, 55a: stream
16,56: outside stream 17,57: vacuum pump (vacuum exhaust mechanism)
18,58: air-source 19,30,59,60: valve
21: containment member 22,23: leak (closed hole)
53: through hole
Embodiment
Below, for the detailed content of absorptive table of the present invention, be described in detail according to representing the graphic of its example.
Fig. 1 represents the profile of an embodiment of absorptive table of the present invention, and Fig. 2 is its plane graph.
Absorptive table 10 comprises microscope carrier body 13, and this microscope carrier body 13 is placed with the square microscope carrier 11 of substrate G by 11a above (microscope carrier surface) and is formed for the base 12 that microscope carrier 11 carries out supporting in the mode abutted at its periphery.In this example, be supported by base 12 by 11c below the periphery of microscope carrier 11, but also in the same manner as microscope carrier 71 illustrated in fig. 9, can be supported by base by the side of microscope carrier periphery.As long as make contact-making surface adherence during arbitrary situation and just can not from boundary face generation leakage.
Microscope carrier 11 utilizes the porous scutum of pottery system to be formed, and overleaf 11b be fixed with containment member 21 and be formed with closed hole 23 (22) in lattice shape with a determining deviation.About those detailed content in description.In the inboard portion except periphery of microscope carrier 11 and base 12, by by below microscope carrier 11 and being processed as recess above of base 12 and form hollow space 14, and the back side 11b (below inboard portion) of microscope carrier 11 is towards hollow space 14.Moreover hollow space 14 both can only be established by microscope carrier 11 side recesses machined, also can only establish by base 12 side recesses machined.
At the center of base 12, connector 15 is installed, and in connector 15, is formed with the stream 15a of sensible hollow space 14.Connector 15 and then be connected to vacuum pump 17, air-source 18 via outside stream 16, and hollow space 14 can be made to become decompression state by opening valve 19, or it can be made to be back to atmospheric pressure state by opening valve 30.
Outside stream 16 near connector 15 is provided with pressure sensor 31, it can monitor the pressure of hollow space 14, and can be used as vacuum switch and use, namely by presetting threshold values, and carrying out the judgement of the substrate confining force that whether can ensure stably needed for fixing base G.
Secondly, the processing of the back side 11b of microscope carrier 11 is described.Fig. 3 represents the figure of the processing sequence of the microscope carrier 11 be made up of porous scutum.
First, as shown in Fig. 3 (a), the surperficial 11a being placed with substrate is processed as tabular surface, and forms the recess be made up of 11c below back side 11b and periphery in opposition side.
Then, as shown in Fig. 3 (b), to cover the mode set containment member 21 of back side 11b.Specifically, epoxy resin as solid is coated with as containment member 21 in the mode of the back side 11b entirety covering microscope carrier 11.Moreover, as long as the material that containment member 21 is the gas permeability of porous member capable of blocking is just not particularly limited.
Then, as shown in Fig. 3 (c), leak 22 is formed to formed containment member 21.In this example, leak 22 is formed in square lattice shape throughout the entirety of back side 11b with a determining deviation.
Then, as shown in Fig. 3 (d), towards microscope carrier 11 depth direction and process leak 22, formed and arrive the leak 23 (non-through) of microscope carrier 11 inside.Specifically, peel off processing by Drilling operation or laser and form the leak 23 of desired depth.
The preferred depths being formed at the leak of microscope carrier 11 is 10% ~ 50% of thickness of slab.Such as, if thickness of slab is set to 20mm, as long as leak to be set to the degree of depth of 2mm ~ 10mm, just can be set to and to balance preferably absorption affinity.That is, the substrate of the area of 10% ~ 30% of effective adsorption area of microscope carrier 11 can positively fixedly be had.
Moreover, only otherwise through microscope carrier 11, then both can form the closed hole 23 dark compared with this, also can be set to the closed hole 22 of only through containment member 21.Absorption affinity is produced respectively with characteristic distribution.
Again, though the better aperture of leak also depends on other parameters such as material, the leak degree of depth of porous scutum, as long as be 0.5mm ~ 5mm.
Fig. 4 ~ Fig. 6 represents the figure of the change of the different adsorbed state of the degree of depth according to leak 22,23.
Adsorbed state when Fig. 4 is the leak 22 forming only through containment member 21, Fig. 5 is adsorbed state when Formation Depth is the leak 23 of about 5mm (25% of thickness of slab 20mm) on microscope carrier 11, and Fig. 6 is adsorbed state when Formation Depth is the leak of about 15mm (75% of thickness of slab 20mm) on microscope carrier 11.Aperture is 3mm.
In arbitrary figure, (a) is the schematic diagram of the section of microscope carrier 11, represents the scope producing air current flow with solid line.Again, (b) is the schematic diagram of the 11a above of microscope carrier 11, represents the region producing absorption affinity with A, B, C.
When containment member 21 only has the situation of leak 22, as shown in Figure 4, leakage rate is restricted, absorption affinity only above leak 22 region A nearby work.When this situation, such as, can be used in for the situation etc. to adsorb the substrate be highly brittle compared with weakly stable power.
When having the situation of the leak 23 arriving porous scutum at the bottom of hole, as shown in Figure 5, binding domain B becomes quite wide, and the thickness of slab of position Porous is nearby thinning above leak 23, therefore the resistance of flowing diminishes, and absorption affinity also increases.When this situation, also can positively adsorb even if the area of substrate G is about 10% ~ 30% of the absorption effective area S of microscope carrier 11.
When deepening to become the situation of the degree of depth of more than 50% of the thickness of slab of porous scutum at the bottom of leak to hole, as shown in Figure 6, binding domain C and then broaden, adsorbs strongly at roughly whole of absorption effective area of microscope carrier 11.
Above, representational embodiment of the present invention is illustrated, but wood invention is not specific to above-mentioned example, reaching its object and not departing from the scope of claim, can carry out suitable correction, change.
Such as, up to now, on microscope carrier 11 on 11a, to become equally distributed mode as far as possible, absorption affinity is played a role in lattice shape, but also can be in contrast to this, make the distribution of leak, the parameter such as number, the degree of depth of leak, the footpath of leak of the per unit area of leak becomes uneven, and absorption affinity is played a role unevenly.
The depth distribution of leak 23 is set to uneven example by Fig. 7.In this example, be left hand half is divided into leak 23 illustrated in fig. 5, right hand half be divided into leak 22 illustrated in fig. 4.By this, along line, the left side of substrate G can adsorbed strongly, and process under the state of weaker adsorbing right side, and easily can dodge by right side when external force puts on substrate G and excessive load can not be applied.
Not only can the degree of depth of leak be set to uneven, also aperture can be set to uneven, also hole count can be set to uneven.Again, unevenly also identical effect can be obtained even if be set to by the number of the distribution of leak, the per unit area of leak.
Again, in addition, also can leak be set to uneven in the central authorities of microscope carrier 11 and outside and absorption affinity is changed.
[utilizability in industry]
Absorptive table of the present invention can be used as the microscope carrier of fixing base in base plate processing device and utilizes.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be the content not departing from technical solution of the present invention, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (2)
1. an absorptive table, it comprises by be formed with porous scutum and the microscope carrier loading substrate is above formed with the base of the peripheral part supporting above-mentioned microscope carrier, and is formed with hollow space with inside and the microscope carrier body that formed towards the mode of above-mentioned hollow space of the back side of above-mentioned microscope carrier and the vacuum exhaust mechanism that reduces pressure to above-mentioned hollow space; It is characterized in that:
The back side of above-mentioned microscope carrier is covered by the containment member without gas permeability, and be formed with leak in a part for above-mentioned containment member;
Above-mentioned leak does not run through above-mentioned microscope carrier;
Above-mentioned leak is that self sealss component extends to depth direction and forms at the end of porous scutum formation leak;
Above-mentioned leak is formed multiple in lattice shape at the back side of microscope carrier;
If make hollow space become decompression state, produce leakage from above-mentioned leak via porous scutum.
2. absorptive table according to claim 1, is characterized in that the degree of depth at the end of wherein above-mentioned leak is 10% ~ 50% of the thickness of slab of porous scutum.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010226093A JP5092004B2 (en) | 2010-10-05 | 2010-10-05 | Suction table |
| JP2010-226093 | 2010-10-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102446799A CN102446799A (en) | 2012-05-09 |
| CN102446799B true CN102446799B (en) | 2015-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110290655.3A Expired - Fee Related CN102446799B (en) | 2010-10-05 | 2011-09-21 | Suction table |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5092004B2 (en) |
| KR (1) | KR101242420B1 (en) |
| CN (1) | CN102446799B (en) |
| TW (1) | TWI449120B (en) |
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| JP5943742B2 (en) | 2012-07-04 | 2016-07-05 | 三菱電機株式会社 | Semiconductor test jig and semiconductor test method using the same |
| JP5899423B2 (en) * | 2012-11-30 | 2016-04-06 | パナソニックＩｐマネジメント株式会社 | Component mounting apparatus and suction tool |
| JP6154173B2 (en) * | 2013-04-03 | 2017-06-28 | 株式会社ナノテム | Vacuum suction device and suction plate |
| KR101468664B1 (en) * | 2013-07-18 | 2014-12-04 | 에버테크노 주식회사 | Substrate sucking device of exposure apparatus for printed circuit board |
| CN104858806B (en) * | 2014-02-26 | 2022-03-01 | 盛美半导体设备(上海)股份有限公司 | Vacuum clamp |
| JP6474205B2 (en) * | 2014-05-16 | 2019-02-27 | 川崎重工業株式会社 | Adsorption surface plate and welding robot system |
| CN204137371U (en) * | 2014-09-18 | 2015-02-04 | 弘森电子(上海)有限公司 | A kind of screen type film sticking apparatus |
| JP6815138B2 (en) * | 2016-09-06 | 2021-01-20 | 株式会社ディスコ | Suction retention system |
| JP6934335B2 (en) * | 2017-07-03 | 2021-09-15 | 日本特殊陶業株式会社 | Vacuum suction member |
| TWI638759B (en) * | 2018-04-17 | 2018-10-21 | 威光自動化科技股份有限公司 | Negative pressure adsorber for shaped sheet objects |
| JP2020115238A (en) * | 2020-04-17 | 2020-07-30 | 堺ディスプレイプロダクト株式会社 | Manufacturing method and manufacturing apparatus for flexible light emitting device |
| KR102363046B1 (en) * | 2021-08-18 | 2022-02-15 | 주식회사 21세기 | A method for processing micro-hole of upper mold used for laminating a thin film sheet using femtosecond pulsed laser |
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| CN101221920A (en) * | 2007-12-25 | 2008-07-16 | 中国电子科技集团公司第四十五研究所 | Wafer adsorption mechanism |
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- 2010-10-05 JP JP2010226093A patent/JP5092004B2/en not_active Expired - Fee Related
-
2011
- 2011-07-28 TW TW100126758A patent/TWI449120B/en not_active IP Right Cessation
- 2011-09-14 KR KR1020110092434A patent/KR101242420B1/en not_active IP Right Cessation
- 2011-09-21 CN CN201110290655.3A patent/CN102446799B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221920A (en) * | 2007-12-25 | 2008-07-16 | 中国电子科技集团公司第四十五研究所 | Wafer adsorption mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5092004B2 (en) | 2012-12-05 |
| TW201218308A (en) | 2012-05-01 |
| JP2012076204A (en) | 2012-04-19 |
| CN102446799A (en) | 2012-05-09 |
| KR101242420B1 (en) | 2013-03-12 |
| TWI449120B (en) | 2014-08-11 |
| KR20120035853A (en) | 2012-04-16 |
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