CN102446799A - Suction table - Google Patents
Suction table Download PDFInfo
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- CN102446799A CN102446799A CN2011102906553A CN201110290655A CN102446799A CN 102446799 A CN102446799 A CN 102446799A CN 2011102906553 A CN2011102906553 A CN 2011102906553A CN 201110290655 A CN201110290655 A CN 201110290655A CN 102446799 A CN102446799 A CN 102446799A
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- leak
- microscope carrier
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- absorptive table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The present invention relates to a suction table with a porous plate, which has a structure that can adjust magnitude or arrangement of an absorption force that is applied on the substrate. The suction table (10) comprises the following components: a carrier platform table (13) which is composed of a carrier platform (11) that is made of porous plate and carries the substrate (G) on an upper surface (11a) and a base, and is formed through a mode that a hollow space (14) is formed at inner part and back surface (11b) of the carrier platform faces the hollow space (14); and a vacuum exhausting mechanism (17) which decompresses the hollow space (14). The back surface (11b) of the carrier platform is covered by a non-ventilated sealing component (21). Furthermore one part of the sealing component is provided with leaking holes (22). If the hollow space (14) is changed to a decompression state, leakage occurs from the leaking holes (22) through the porous plate.
Description
Technical field
The invention relates to a kind of absorptive table flat substrate is fixing by vacuum suction, the invention relates to the absorptive table that a kind of adsorption plane is formed by porous material more in detail.
Background technology
Absorptive table substrate is fixing by vacuum suction is utilized in the base plate processing device in various fields.For example; Upward a plurality of electronic components are being carried out pattern formation at large-scale glass substrate or semiconductor substrate (so-called mother substrate); And with it by in the base plate processing device of each electronic component disjunction; By the mechanical scratching that uses break bar etc. or use the laser delineation of thunder laser beam, and carry out on substrate, forming the processing of line.At this moment, rule on desired location, forming, and position and utilize absorptive table that substrate is fixed substrate.
Be used for the absorptive table of base plate processing device, known have on metallic plate the through hole that forms a plurality of absorption usefulness and with its absorptive table as the type of adsorption plane, and with the absorptive table (with reference to patent documentation 1) of porous scutum as the type of adsorption plane.
Fig. 8 be illustrated in the through hole that is formed with a plurality of absorption usefulness on the metallic plate type absorptive table one the example profile.Absorptive table 50 is included in top 51a (becoming the microscope carrier surface of adsorption plane) and uploads the metal microscope carrier 51 that is equipped with substrate, with the base 52 of supporting microscope carrier 51 at its periphery.Microscope carrier 51 is equipped with in the zone of substrate G carrying, and is clathrate and is formed with a plurality of through holes 53.The place is close in the below of microscope carrier 51, is formed with hollow space 54, and the back side 51b of microscope carrier 51 is made as towards hollow space 54.And, each through hole 53 sensible hollow space 54.
The center of base 52 is equipped with connector 55, is formed with the stream 55a of sensible hollow space 54 in the connector 55.Connector 55 and then be connected in vacuum pump 57, air source 58 via outside stream 56 can be made as decompression state with hollow space 54 by the switching of valve 59,60, perhaps makes it be back to atmospheric pressure state.
In the absorptive table 50,, puts on microscope carrier 51 and the stronger absorption affinity of performance, stably fixing base G when blocking all through holes 53 substrate G by being carried.For example; All blocked as if all through holes 53 when utilizing vacuum pump 57 exhausts by substrate G; Near the pressure sensor 61 that utilization is arranged at the connector 55 is monitored; The pressure of hollow space 54 is decompressed to-pressure about 60KPa, if remove open all through holes 53 of substrate G then hollow space 54 become-pressure about 5KPa.Therefore, put substrate G as long as carry with the mode of blocking all through holes 53, then the pressure differential between those 2 states (about the about 55KPa of differential pressure) becomes and brings into play absorption affinity via each through hole 53.Moreover when the situation of absorptive table 50, even if if open 1 through hole 53 because of the offset of substrate G, then produce bigger leakage from the through hole of being opened, absorption affinity dies down quickly.
On the other hand, Fig. 9 shows that adsorption plane uses the profile of an example of absorptive table of type of the porous scutum of ceramic.
In absorptive table 70, use the metallic microscope carrier 51 among the microscope carrier 71 replacement Fig. 8 that constituted by the porous scutum.Contain a plurality of fine holes in the porous scutum, and have gas permeability between 71a and the following 71b in the above.Moreover the each several part except that microscope carrier 71 is the formation identical with Fig. 8, so mark same-sign and clipped explanation.
In absorptive table 70, hollow space 54 becomes decompression state if make vacuum pump 57 turn round then, produces leakage via the fine holes of whole of porous scutum, becomes the roughly whole absorption of top 71a that can microscope carrier 71.Therefore, no matter substrate G carried all absorption where that places top 71a.Yet the resistance of the gas flow through fine holes in the porous scutum is big, leakage rate is less, so can't expect bigger absorption affinity.
For example; All (adsorption plane is all) as if top 71a when utilizing vacuum pump 57 exhausts blocked by substrate G fully; Though hollow space 54 is decompressed to pressure sensor 61-pressure about 60KPa till; But removing substrate G open above during all situation of 71a, the leakage rate of fine holes is less, hollow space 54 becomes-decompression state about 55KPa.That is, the porous scutum can only be with less pressure differential (about differential pressure 5KPa) as absorption affinity.
[prior art document]
[patent documentation]
Patent documentation 1: TOHKEMY 2000-332087 communique
Summary of the invention
[problem that invention institute desire solves]
As above-mentioned, in the absorptive table 70 of the latter's use porous scutum, can't obtain as in the former absorptive table 50 via 53 obtainable strong absorption affinities of through hole.In absorptive table 70, in contact with top 71a (porous matter face) at substrate G whole, produce absorption affinity, so then absorption affinity can a little increase as long as increase the substrate area that contact with top 71a.Therefore, positively fixing for carrying the substrate G that places top 71a, must fully increase the area of substrate G so that act on all absorption affinities of substrate G greater than being the maintenance necessary power of substrate (also can be described as the substrate confining force).
For example, in absorptive table shown in Figure 9 70, in the above on the 71a; If the area that can make the zone that absorption affinity produces is as absorption effective area S; Though then also exist with ... the material of porous scutum, especially porosity, when the situation of the porous scutum of general ceramic, shown in figure 10; Do not put substrate G if do not carry, then fixing base stably with the mode of (being more than the 0.6S) more than 60% that covers absorption effective area S.
Therefore, the object of the present invention is to provide a kind of adsorption plane to use the absorptive table of porous scutum, it has can be to act on the structure that mode that the absorption affinity of carrying the substrate that places adsorption plane is better than (perhaps being weaker than on the contrary) absorption affinity is up to now adjusted.
Again, the object of the present invention is to provide a kind of absorptive table, it can obtain the stably fixing required sufficient absorption affinity of this substrate by only cover carrying 10%～30% of absorption effective area in the microscope carrier that is equipped with substrate top with substrate.
And then; The object of the present invention is to provide a kind of absorptive table from what other viewpoint researchs formed; It is in the absorptive table that uses the porous scutum; The state that flows of the leakage that results from the porous matter is changed, make absorption affinity be better than previous or absorption affinity is weaker than before, can adjust size or distribution by this absorption affinity of carrying the substrate that places absorptive table.
[means of dealing with problems]
For addressing the above problem the absorptive table of accomplishing of the present invention; It comprises by the microscope carrier that forms and put in top year substrate with porous scutum base with the peripheral part of supporting microscope carrier and constitutes, and the microscope carrier body that constitutes towards the mode of hollow space of the back side that is formed with hollow space and microscope carrier with inside, and vacuum exhaust mechanism that hollow space is reduced pressure; The back side of microscope carrier is with the containment member covering of no gas permeability and on the part of containment member, is formed with leak, then produces leakage from leak via the porous scutum if make hollow space become decompression state.
[effect of invention]
According to the present invention, if hollow space is carried out vacuum exhaust and makes it become decompression state, then the idiomorphism leak that is formed in the part of containment member produces leakage via the porous scutum.Because the part beyond the leak is blocked by containment member, thus be not as up to now, on whole of porous scutum (the whole face of microscope carrier), to produce leakage equably, but produce leakage towards the part of its upper area from leak.Its result does, the generation state (gas flow state) of the leakage in the porous scutum changes, and the size of absorption affinity or distribute changes, and obtains absorption affinity with the distribution different with absorptive table (for example with reference to Fig. 9) up to now.Particularly, the generation zone of absorption affinity is the upper area that concentrates on leak, even if be that the porous scutum also can only make near the generation absorption affinity that forms leak.
Here, but leak also the self sealss member extend and form the end of leak at the porous scutum to depth direction.
If form the end of leak at the porous scutum by deepening leak; Then leakage rate exists with ... the surface area (floor space in hole and lateralarea with) of formed leak on the porous scutum and increases; Again; The distribution of the gas flow in the porous scutum also changes, and compares with the absorptive table of the porous scutum of leak and can strengthen absorption affinity with the previous containment member that is not provided with.
Here, the degree of depth at the end of leak be preferably the porous scutum thickness of slab 10%～50%.
The degree of depth as if the leak that is formed at the porous scutum is shallow than this, though then can adjust the distribution in the zone that produces absorption affinity, leakage rate tails off and absorption affinity diminishes.If the degree of depth of leak is dark than this, then absorption affinity effect above roughly whole, it is excessive that leakage rate also becomes, different according to the kind of substrate, and strong excessively absorption affinity might be brought impact and makes a very bad impression substrate.Therefore, if the degree of depth at the end of leak be the porous scutum thickness of slab 10%～50%, just can obtain absorption affinity, and can obtain the absorption affinity of appropriateness, and become the absorptive table that absorption affinity keeps balance greater than the porous scutum that does not form leak.
In foregoing invention, be preferably leak and form a plurality of with being clathrate in the back side of microscope carrier.That by this, can spread all over microscope carrier all and roughly adsorbs substrate equably.
In foregoing invention; Leak also can form a plurality of at the back side of microscope carrier; And make in the footpath of the degree of depth, leak of number, leak of per unit area of distribution, leak of leak any one becomes inhomogeneous at least, thereby absorption affinity is acted on unevenly.
By leakage rate being made as uneven distribution, absorption affinity also can impose on microscope carrier unevenly.For example, can make absorption affinity in central authorities with change on every side, or can apply stronger absorption affinity the part of microscope carrier.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 representes the profile of an embodiment of absorptive table of the present invention.
Fig. 2 is the plane graph of the absorptive table among Fig. 1.
Fig. 3 representes to be used for the block diagram of processing sequence of the microscope carrier of absorptive table of the present invention.
Fig. 4 representes to utilize the figure of adsorbed state of the microscope carrier of leak 22.
The figure of the adsorbed state of the microscope carrier when Fig. 5 representes that the degree of depth with leak 23 is made as the 5mm left and right sides.
The figure of the adsorbed state of the microscope carrier when Fig. 6 representes that the degree of depth with leak 23 is made as the 15mm left and right sides.
The figure of the adsorbed state of the microscope carrier when Fig. 7 representes to make the degree of depth of leak 23 in about microscope carrier, to change.
Fig. 8 is illustrated in and forms the profile (first precedent) of a plurality of absorption with an example of the absorptive table of the type of through hole on the metallic plate.
Fig. 9 is illustrated in the profile (first precedent) of an example of absorptive table that adsorption plane uses the type of porous scutum.
Figure 10 is expressed as the absorptive table of the previous type of utilizing Fig. 9 and substrate is stably fixed the figure (first precedent) of required substrate area.
G: substrate P, 31,61: pressure sensor
10,50,70: absorptive table 11,51,71: microscope carrier (porous scutum)
11a, 51a, 71a: top 11b, 51b: the back side
11c, 71b: following 12,52: base
13: microscope carrier body 14,54: hollow space
15,55: connector 15a, 55a: stream
16,56: outside stream 17,57: vacuum pump (vacuum exhaust mechanism)
18,58: air source 19,30,59,60: valve
21: containment member 22,23: leak (closed hole)
53: through hole
Embodiment
Below, to the detailed content of absorptive table of the present invention, be elaborated according to expression the graphic of its example.
Fig. 1 representes the profile of an embodiment of absorptive table of the present invention, and Fig. 2 is its plane graph.
Absorptive table 10 comprises microscope carrier body 13, and this microscope carrier body 13 is by the square microscope carrier 11 that was equipped with substrate G in top 11a (microscope carrier surface) year, reaches for base 12 formations of microscope carrier 11 to support in the mode of its periphery butt.In this example, be that the following 11c by the periphery of microscope carrier 11 is supported by base 12, but also can with microscope carrier 71 illustrated in fig. 9 likewise, by the side of microscope carrier periphery by the base support.Do not produce to leak as long as make the contact-making surface adherence during arbitrary situation and just can from boundary face.
Microscope carrier 11 is to utilize the porous scutum of ceramic to form, and the last set of 11b has containment member 21 and is formed with closed hole 23 (22) with a determining deviation with being clathrate overleaf.Detailed content about those is narrated hereinafter.At the inside part except that periphery of microscope carrier 11 and base 12, by with being processed as recess above the following and base 12 of microscope carrier 11 and form hollow space 14, and the back side 11b of microscope carrier 11 (inside part following) is towards hollow space 14.Moreover hollow space 14 both can be only by having established in microscope carrier 11 side recesses machined, also can be only by establishing in base 12 side recesses machined.
At the center of base 12 connector 15 is installed, and in connector 15, is formed with the stream 15a of sensible hollow space 14.Connector 15 and then be connected in vacuum pump 17, air source 18 via outside stream 16, and can make hollow space 14 become decompression state by opening valve 19, perhaps can make it be back to atmospheric pressure state by opening valve 30.
Near connector 15 outside stream 16 is equipped with pressure sensor 31; It can monitor the pressure of hollow space 14; And can be used as vacuum switch and use,, and carry out whether can guaranteeing judgement for the required substrate confining force of fixing base G stably promptly by preestablishing threshold values.
Secondly, the processing to the back side 11b of microscope carrier 11 describes.The figure of the processing sequence of the microscope carrier 11 that Fig. 3 representes to be made up of the porous scutum.
At first, shown in Fig. 3 (a), be processed as tabular surface with carrying the surperficial 11a that is equipped with substrate, and form the recess that 11c constitutes below back side 11b and periphery at opposition side.
Then, shown in Fig. 3 (b), to cover the mode set containment member 21 of back side 11b.Particularly, be coated with epoxy resin as solid as containment member 21 with all modes of back side 11b that cover microscope carrier 11.Moreover the material that containment member 21 needs only to the gas permeability of porous member capable of blocking does not just have special qualification.
Then, shown in Fig. 3 (c), formed containment member 21 is formed leak 22.In this example, leak 22 is to spread all over all of back side 11b and be the formation of square lattice shape ground with a determining deviation.
Then, shown in Fig. 3 (d), process leak 22, form and arrive the inner leak 23 (non-through) of microscope carrier 11 towards the depth direction of microscope carrier 11.Particularly, peel off processing and the leak 23 of formation desired depth by boring processing or laser.
The preferred depths that is formed at the leak of microscope carrier 11 is 10%～50% of a thickness of slab.For example, then need only the degree of depth that leak is made as 2mm～10mm, just can be made as the preferable absorption affinity of balance if thickness of slab is made as 20mm.That is the substrate of 10%～30% area that, can positively fixedly have effective adsorption area of microscope carrier 11.
Moreover, only otherwise connect microscope carrier 11, then both can form than this dark closed hole 23, also can be made as the closed hole 22 that only connects containment member 21.Distribute with characteristic respectively and the generation absorption affinity.
Again, though the preferable aperture of leak also exists with ... other parameters such as the material, the leak degree of depth of porous scutum, as long as be 0.5mm～5mm.
Fig. 4～Fig. 6 representes the figure according to the variation of the different adsorption state of the degree of depth of leak 22,23.
Fig. 4 is the adsorbed state when forming the leak 22 that only connects containment member 21; Adsorbed state when the adsorbed state when Fig. 5 on microscope carrier 11, forming the degree of depth is the leak 23 of (thickness of slab 20mm 25%) about 5mm, Fig. 6 on microscope carrier 11, forming the degree of depth are the leak of (thickness of slab 20mm 75%) about 15mm.The aperture is 3mm.
Among arbitrary figure, (a) be the sketch map of the section of microscope carrier 11, represent to produce the scope of air current flow with solid line.(b) be the sketch map of the top 11a of microscope carrier 11, the zone of representing to produce absorption affinity with A, B, C again.
When on containment member 21, only having the situation of leak 22, as shown in Figure 4, leakage rate is restricted, absorption affinity only above leak 22 nearby regional A work.When this situation, the situation in the substrate of desiring to be highly brittle for example capable of using etc. with the absorption of more weak absorption affinity.
When at the bottom of having the hole, arriving the situation of leak 23 of porous scutum, as shown in Figure 5, it is quite wide that binding domain B becomes, and nearby the thickness of slab attenuation of position porous matter above leak 23, so mobile resistance force diminishes, absorption affinity also increases.When this situation, even if the area of substrate G also can positively adsorb for about 10%～30% of the absorption effective area S of microscope carrier 11.
When the situation of the degree of depth 50% or more of the thickness of slab of deepening to become at the bottom of leak to the hole porous scutum, as shown in Figure 6, binding domain C and then broaden adsorbs at roughly whole of the absorption effective area of microscope carrier 11 strongly.
More than, representational embodiment of the present invention is illustrated, but the wood invention reaching its purpose and not breaking away from the scope of claim, can be carried out suitable correction, change not specific to above-mentioned example.
For example; Up to now; On microscope carrier 11, on the 11a, absorption affinity is played a role with being clathrate to become equally distributed mode as far as possible, but also can be in contrast; Make the number, the degree of depth of leak, the parameters such as footpath of leak of per unit area of distribution, the leak of leak become inhomogeneous, and absorption affinity is played a role unevenly.
Fig. 7 is that the depth distribution with leak 23 is made as inhomogeneous example.In this example, be that left side half part is made as leak illustrated in fig. 5 23, right side half part is made as leak illustrated in fig. 4 22.By this, can the left side of substrate G adsorbed strongly, and process under more weak the state that adsorbs the right side, and when external force puts on the substrate G, can not apply excessive load by the right side is prone to dodge along line.
Not only can the degree of depth of leak be made as inhomogeneously, also can the aperture be made as inhomogeneously, also can hole count be made as inhomogeneous.Inhomogeneously also can obtain identical effect even if the number of the per unit area of the distribution of leak, leak is made as again.
Again, in addition, also can in the central authorities of microscope carrier 11 and the outside be made as leak inhomogeneous and absorption affinity is changed.
[utilizability on the industry]
Absorptive table of the present invention can be used as the microscope carrier of fixing base in the base plate processing device and utilizes.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (5)
1. absorptive table; It comprises by the microscope carrier that forms and put in top year substrate with porous scutum base with the peripheral part of supporting above-mentioned microscope carrier and constitutes, and is formed with microscope carrier body that the mode of the above-mentioned hollow space of rear surface faces of hollow space and above-mentioned microscope carrier constitutes, and vacuum exhaust mechanism that above-mentioned hollow space is reduced pressure with inside; It is characterized in that:
The back side of above-mentioned microscope carrier is the containment member covering by no gas permeability, and is formed with leak in the part of above-mentioned containment member;
Then produce leakage via the porous scutum if make hollow space become decompression state from above-mentioned leak.
2. absorptive table according to claim 1 is characterized in that wherein above-mentioned leak is that the self sealss member forms to the depth direction extension and at the end of porous scutum formation leak.
3. absorptive table according to claim 1, it is characterized in that the degree of depth at the end of above-mentioned leak wherein be the porous scutum thickness of slab 10%～50%.
4. absorptive table according to claim 1 is characterized in that wherein above-mentioned leak is to be clathrate ground to be formed with a plurality of at the back side of microscope carrier.
5. absorptive table according to claim 1; It is characterized in that wherein above-mentioned leak is to form a plurality of at the back side of microscope carrier; And make in the footpath of the degree of depth, leak of number, leak of per unit area of distribution, leak of leak any one becomes inhomogeneous at least, thereby absorption affinity is played a role unevenly.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-226093 | 2010-10-05 | ||
| JP2010226093A JP5092004B2 (en) | 2010-10-05 | 2010-10-05 | Suction table |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102446799A true CN102446799A (en) | 2012-05-09 |
| CN102446799B CN102446799B (en) | 2015-07-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110290655.3A Expired - Fee Related CN102446799B (en) | 2010-10-05 | 2011-09-21 | Suction table |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5092004B2 (en) |
| KR (1) | KR101242420B1 (en) |
| CN (1) | CN102446799B (en) |
| TW (1) | TWI449120B (en) |
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| JP2004154920A (en) * | 2002-11-08 | 2004-06-03 | Central Glass Co Ltd | Suction pad for suction-holding and grinding glass substrate |
| JP2005032959A (en) * | 2003-07-11 | 2005-02-03 | Nikon Corp | Vacuum chuck, polishing device, exposure device, and method for manufacturing semiconductor device |
| CN101221920A (en) * | 2007-12-25 | 2008-07-16 | 中国电子科技集团公司第四十五研究所 | Wafer adsorption mechanism |
| WO2010035786A1 (en) * | 2008-09-29 | 2010-04-01 | 日東電工株式会社 | Suction sheet |
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| JPH04142548A (en) * | 1990-10-03 | 1992-05-15 | Ricoh Co Ltd | Registration method for high-polymer film substrate |
| JPH07214442A (en) * | 1994-01-28 | 1995-08-15 | Roland D G Kk | Vacuum table |
| JP2000332087A (en) * | 1999-05-25 | 2000-11-30 | Sony Corp | Substrate vacuum chuck apparatus |
| JP5028914B2 (en) | 2006-08-28 | 2012-09-19 | パナソニック株式会社 | Pre-preg sheet fixing method and prepreg sheet fixing device used therefor |
| JP4851282B2 (en) * | 2006-09-21 | 2012-01-11 | 株式会社ディスコ | Cutting equipment |
| JP2008132562A (en) * | 2006-11-28 | 2008-06-12 | Kyocera Corp | Vacuum chuck and vacuum suction device using it |
| JP4956302B2 (en) * | 2007-07-05 | 2012-06-20 | 株式会社タンケンシールセーコウ | Carbon adsorbent and method for producing the same |
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2010
- 2010-10-05 JP JP2010226093A patent/JP5092004B2/en not_active Expired - Fee Related
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2011
- 2011-07-28 TW TW100126758A patent/TWI449120B/en not_active IP Right Cessation
- 2011-09-14 KR KR1020110092434A patent/KR101242420B1/en not_active IP Right Cessation
- 2011-09-21 CN CN201110290655.3A patent/CN102446799B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004154920A (en) * | 2002-11-08 | 2004-06-03 | Central Glass Co Ltd | Suction pad for suction-holding and grinding glass substrate |
| JP2005032959A (en) * | 2003-07-11 | 2005-02-03 | Nikon Corp | Vacuum chuck, polishing device, exposure device, and method for manufacturing semiconductor device |
| CN101221920A (en) * | 2007-12-25 | 2008-07-16 | 中国电子科技集团公司第四十五研究所 | Wafer adsorption mechanism |
| WO2010035786A1 (en) * | 2008-09-29 | 2010-04-01 | 日東電工株式会社 | Suction sheet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104858806A (en) * | 2014-02-26 | 2015-08-26 | 盛美半导体设备（上海）有限公司 | Vacuum clamp |
| CN104858806B (en) * | 2014-02-26 | 2022-03-01 | 盛美半导体设备(上海)股份有限公司 | Vacuum clamp |
| CN110386457A (en) * | 2018-04-17 | 2019-10-29 | 威光自动化设备（南京）有限公司 | Negative pressure adsorber for special-shaped sheet article |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102446799B (en) | 2015-07-15 |
| TWI449120B (en) | 2014-08-11 |
| TW201218308A (en) | 2012-05-01 |
| JP2012076204A (en) | 2012-04-19 |
| KR20120035853A (en) | 2012-04-16 |
| KR101242420B1 (en) | 2013-03-12 |
| JP5092004B2 (en) | 2012-12-05 |
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