TW200633038A - Means to eliminate bubble entrapment during electrochemical processing of workpiece surface - Google Patents

Means to eliminate bubble entrapment during electrochemical processing of workpiece surface

Info

Publication number
TW200633038A
TW200633038A TW094140578A TW94140578A TW200633038A TW 200633038 A TW200633038 A TW 200633038A TW 094140578 A TW094140578 A TW 094140578A TW 94140578 A TW94140578 A TW 94140578A TW 200633038 A TW200633038 A TW 200633038A
Authority
TW
Taiwan
Prior art keywords
electrochemical processing
during electrochemical
workpiece surface
eliminate bubble
bubble entrapment
Prior art date
Application number
TW094140578A
Other languages
Chinese (zh)
Inventor
Jeffrey Bogart
Bulent M Basol
Original Assignee
Asm Nutool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Nutool Inc filed Critical Asm Nutool Inc
Publication of TW200633038A publication Critical patent/TW200633038A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04Electroplating with moving electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)

Abstract

Methods and systems are provided to eliminate bubble entrapment during electrochemical processing of a substrate, wherein a rigid plate (500) with fluid openings (520) allow process solution (505) to flow between the front surface (510) of the substrate (503) and an electrode (506). The plate (500) includes a protruding region (524). In operation, the protruding region causes a raised solution surface (526) to touch the front surface (510) of the wafer prior to complete immersion of the substrate (503) in the solution (505).
TW094140578A 2004-11-19 2005-11-18 Means to eliminate bubble entrapment during electrochemical processing of workpiece surface TW200633038A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63511204P 2004-11-19 2004-11-19

Publications (1)

Publication Number Publication Date
TW200633038A true TW200633038A (en) 2006-09-16

Family

ID=36407480

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140578A TW200633038A (en) 2004-11-19 2005-11-18 Means to eliminate bubble entrapment during electrochemical processing of workpiece surface

Country Status (3)

Country Link
CN (1) CN101056718A (en)
TW (1) TW200633038A (en)
WO (1) WO2006055766A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US9318358B2 (en) * 2011-04-28 2016-04-19 Infineon Technologies Ag Etching device and a method for etching a material of a workpiece
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
JP6494910B2 (en) * 2012-12-12 2019-04-03 ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated Enhanced electrolyte hydrodynamics for efficient mass transport during electroplating
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US9988733B2 (en) 2015-06-09 2018-06-05 Lam Research Corporation Apparatus and method for modulating azimuthal uniformity in electroplating
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
CN115044958B (en) * 2022-06-07 2024-05-28 赛莱克斯微系统科技(北京)有限公司 Wafer electroplating liquid return pipe and wafer electroplating equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus

Also Published As

Publication number Publication date
WO2006055766A1 (en) 2006-05-26
CN101056718A (en) 2007-10-17

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