JP2012064783A - 微細パターンの形成方法 - Google Patents
微細パターンの形成方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
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- G—PHYSICS
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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Abstract
【解決手段】基板上にハードマスクを形成する工程と、ハードマスク上にマスク補助材を形成する工程と、マスク補助材上に海島構造を有するジブロックコポリマー層を形成する工程と、ジブロックコポリマー層に前記海島構造の島部が凸部となる凹凸状構造のパターンを形成する工程と、ジブロックコポリマー層に形成されたパターンをマスクとしてマスク補助材およびハードマスクをエッチングし、ハードマスクにパターンを転写する工程と、を備え、マスク補助材はエッチング速度が、ハードマスクのエッチング速度より大きく、ジブロックコポリマーの海島構造の海の部分のエッチング速度より小さい材料である。
【選択図】図1
Description
本実施形態の微細パターンの形成方法を説明する前に、その概要を説明する。本発明者達は、パターンを転写するハードマスクと配列構造を有するジブロックコポリマー層との間に、適切なマスク補助材を挿入することで、ハードマスクにパターンを転写した際に、形状ラフネスの変化が小さくなることを見出した。この方法を用いることにより、マスク補助材のパターンをハードマスクへ転写することが可能となり、ハードマスクへのパターン転写において、サイドエッチングされるポリマーの影響を受けなくすることができる。
実施例1による微細パターンの形成方法を図1(a)乃至図1(e)を参照して説明する。
上述した実施例1の比較例として、マスク補助材6を形成しない以外は、実施例1と同様の工程を用いてパターンを転写し、測定を行った。転写後の基板2をSEMで測定し、パターンサイズの平均値を見積もった結果、直径は約13nmであり、標準偏差は3.4nmであった。その結果、マスク補助材6を形成しないでパターン転写した場合、パターンの変動係数は24%であることがわかった。
次に、実施例2として、マスク補助材6の膜厚と転写されたパターンの変動係数との関係およびマスク補助材6の膜厚とハードマスクの凹凸との関係について説明する。
次に、実施例3による微細パターンの形成方法について図1(a)乃至図1(e)を参照して説明する。
次に、実施例4による微細パターンの形成方法について図1(a)乃至図1(e)を参照して説明する。
次に、実施例5による微細パターンの形成方法について図1(a)乃至図1(e)を参照して説明する。
次に、実施例6による微細パターンの形成方法について図5(a)乃至図6(c)を参照して説明する。この実施例6の微細パターンの形成方法は、垂直磁気記録方式のパターンドメディアを形成するのに用いられる。
次に、実施例6の比較例として、マスク補助材6を形成する工程を行わず、それ以外の工程は実施例6と同様にして垂直磁気記録媒体を形成した。パターニングされたCoPtからなる強磁性層のパターンをSEMで測定し、変動係数を測定したところ33%であった。
次に、実施例7による微細パターンの形成方法について図7(a)乃至図7(c)を参照して説明する。
次に、実施例8による微細パターンの形成方法について図9(a)乃至図9(e)を参照して説明する。
3 垂直磁気記録層
4 ハードマスク
4a 第一のハードマスク
4b 第二のハードマスク
4c 第三のハードマスク
6 マスク補助材
8 ジブロックコポリマー
8a ポリマー相X(海)
8b ポリマー相Y(島)
Claims (9)
- 基板上にハードマスクを形成する工程と、
前記ハードマスク上にマスク補助材を形成する工程と、
前記マスク補助材上に海島構造を有するジブロックコポリマー層を形成する工程と、
前記ジブロックコポリマー層に前記海島構造の島部が凸部となる凹凸状構造のパターンを形成する工程と、
前記ジブロックコポリマー層に形成されたパターンをマスクとして前記マスク補助材および前記ハードマスクをエッチングし、前記ハードマスクにパターンを転写する工程と、
を備え、
前記マスク補助材はエッチング速度が、前記ハードマスクのエッチング速度より大きく、前記ジブロックコポリマーの海島構造の海の部分のエッチング速度より小さい材料であることを特徴とする微細パターンの形成方法。 - 前記ジブロックコポリマー層の前記海島構造を構成する島部の直径をd(nm)とし、前記マスク補助材の膜厚をt(nm)とすると、0<t<dの条件を満たすことを特徴とする請求項1記載の微細パターンの形成方法。
- 前記マスク補助材は、ポリビニルナフタレン(PVN)、ポリヒドロスチレン(PHS)、ポリビニルビフェニル(PVB)、ポリスチレン(PS)、ポリジメチルシクロヘキサン(PDMS)のいずれか一つもしくは、それらの組み合わせからなることを特徴とする請求項1または2記載の微細パターンの形成方法。
- 前記ジブロックコポリマー層の前記海島構造を構成する島部の材料と、前記マスク補助材とが同一材料であることを特徴とする請求項1乃至3のいずれかに記載の微細パターンの形成方法。
- 前記ジブロックコポリマー層がポリスチレンとポリジメチルシクロヘキサンとの共重合体であり、前記マスク補助材がポリジメチルシクロヘキサンであることを特徴とする請求項1に記載の微細パターンの形成方法。
- パターンが転写された前記ハードマスクを用いて前記基板をエッチングし、前記基板にパターンを転写する工程を更に備えていることを特徴とする請求項1乃至5のいずれかに記載の微細パターンの形成方法。
- 前記ハードマスクが、カーボンを含む第一のハードマスク、シリコンを含む第二のハードマスク、カーボンを含む第三のハードマスクを順次積層した構造であることを特徴とする請求項1乃至6のいずれかに記載の微細パターンの形成方法。
- 前記基板には強磁性層が形成されており、パターンが転写された前記ハードマスクを用いて前記強磁性層をエッチングし、前記強磁性層にパターンを転写する工程を更に備えていることを特徴とする請求項1乃至5のいずれかに記載の微細パターンの形成方法。
- 前記マスク補助材および前記ハードマスクのエッチングは、酸素を用いて行うことを特徴とする請求項1乃至8のいずれかに記載の微細パターンの形成方法。
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