JP2012064611A5 - - Google Patents

Download PDF

Info

Publication number
JP2012064611A5
JP2012064611A5 JP2010205086A JP2010205086A JP2012064611A5 JP 2012064611 A5 JP2012064611 A5 JP 2012064611A5 JP 2010205086 A JP2010205086 A JP 2010205086A JP 2010205086 A JP2010205086 A JP 2010205086A JP 2012064611 A5 JP2012064611 A5 JP 2012064611A5
Authority
JP
Japan
Prior art keywords
layer
group
magnetization
memory
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010205086A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012064611A (ja
JP5724256B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010205086A priority Critical patent/JP5724256B2/ja
Priority claimed from JP2010205086A external-priority patent/JP5724256B2/ja
Priority to US13/226,953 priority patent/US8693239B2/en
Priority to CN201110264219.9A priority patent/CN102403031B/zh
Publication of JP2012064611A publication Critical patent/JP2012064611A/ja
Publication of JP2012064611A5 publication Critical patent/JP2012064611A5/ja
Application granted granted Critical
Publication of JP5724256B2 publication Critical patent/JP5724256B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2010205086A 2010-09-14 2010-09-14 記憶素子、メモリ装置 Expired - Fee Related JP5724256B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010205086A JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
US13/226,953 US8693239B2 (en) 2010-09-14 2011-09-07 Memory element and memory device
CN201110264219.9A CN102403031B (zh) 2010-09-14 2011-09-07 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010205086A JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Publications (3)

Publication Number Publication Date
JP2012064611A JP2012064611A (ja) 2012-03-29
JP2012064611A5 true JP2012064611A5 (enExample) 2015-02-05
JP5724256B2 JP5724256B2 (ja) 2015-05-27

Family

ID=45806597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010205086A Expired - Fee Related JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US8693239B2 (enExample)
JP (1) JP5724256B2 (enExample)
CN (1) CN102403031B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
JP5777588B2 (ja) 2012-09-21 2015-09-09 株式会社東芝 磁気抵抗効果素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP4970113B2 (ja) * 2007-03-30 2012-07-04 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP2008252037A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP4538614B2 (ja) * 2007-10-12 2010-09-08 株式会社東芝 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Similar Documents

Publication Publication Date Title
US9515254B2 (en) Storage element, memory and electronic apparatus
JP5867030B2 (ja) 記憶素子、記憶装置
CN101202325B (zh) 存储元件和存储器
US8436438B2 (en) Memory element and memory device
CN105684178B (zh) 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头
JP2009094104A (ja) 磁気抵抗素子
US8743594B2 (en) Memory element and memory device
TW200828304A (en) Storage element and memory
JP5987613B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP2018157108A (ja) 磁気メモリ
JP6427396B2 (ja) 磁気抵抗素子及び磁気メモリ
CN103137855A (zh) 存储元件和存储设备
CN102610270A (zh) 存储元件和存储器装置
JP2012064611A5 (enExample)
JP2012059878A (ja) 記憶素子、メモリ装置
TW201222546A (en) Memory element and memory device
JP5724256B2 (ja) 記憶素子、メモリ装置
JP2012059879A (ja) 記憶素子、メモリ装置
JP2018157033A (ja) 磁気抵抗素子および磁気メモリ
JP2007317734A (ja) 記憶素子及びメモリ
JP2008300622A (ja) 磁気抵抗効果素子および磁気メモリ装置
JP7398770B2 (ja) 磁気抵抗効果素子及び磁気メモリ
JP2017212464A (ja) 記憶素子、記憶装置、磁気ヘッド
JP5641026B2 (ja) メモリ