JP5724256B2 - 記憶素子、メモリ装置 - Google Patents

記憶素子、メモリ装置 Download PDF

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Publication number
JP5724256B2
JP5724256B2 JP2010205086A JP2010205086A JP5724256B2 JP 5724256 B2 JP5724256 B2 JP 5724256B2 JP 2010205086 A JP2010205086 A JP 2010205086A JP 2010205086 A JP2010205086 A JP 2010205086A JP 5724256 B2 JP5724256 B2 JP 5724256B2
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JP
Japan
Prior art keywords
layer
magnetization
memory
storage
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010205086A
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English (en)
Japanese (ja)
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JP2012064611A5 (enExample
JP2012064611A (ja
Inventor
細見　政功
政功 細見
別所　和宏
和宏 別所
大森　広之
広之 大森
肥後　豊
豊 肥後
一陽 山根
一陽 山根
裕行 内田
裕行 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010205086A priority Critical patent/JP5724256B2/ja
Priority to US13/226,953 priority patent/US8693239B2/en
Priority to CN201110264219.9A priority patent/CN102403031B/zh
Publication of JP2012064611A publication Critical patent/JP2012064611A/ja
Publication of JP2012064611A5 publication Critical patent/JP2012064611A5/ja
Application granted granted Critical
Publication of JP5724256B2 publication Critical patent/JP5724256B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2010205086A 2010-09-14 2010-09-14 記憶素子、メモリ装置 Expired - Fee Related JP5724256B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010205086A JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
US13/226,953 US8693239B2 (en) 2010-09-14 2011-09-07 Memory element and memory device
CN201110264219.9A CN102403031B (zh) 2010-09-14 2011-09-07 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010205086A JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Publications (3)

Publication Number Publication Date
JP2012064611A JP2012064611A (ja) 2012-03-29
JP2012064611A5 JP2012064611A5 (enExample) 2015-02-05
JP5724256B2 true JP5724256B2 (ja) 2015-05-27

Family

ID=45806597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010205086A Expired - Fee Related JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US8693239B2 (enExample)
JP (1) JP5724256B2 (enExample)
CN (1) CN102403031B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
JP5777588B2 (ja) 2012-09-21 2015-09-09 株式会社東芝 磁気抵抗効果素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP4970113B2 (ja) * 2007-03-30 2012-07-04 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP2008252037A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP4538614B2 (ja) * 2007-10-12 2010-09-08 株式会社東芝 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Also Published As

Publication number Publication date
CN102403031A (zh) 2012-04-04
JP2012064611A (ja) 2012-03-29
CN102403031B (zh) 2016-08-17
US8693239B2 (en) 2014-04-08
US20120063217A1 (en) 2012-03-15

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