CN102403031B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

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Publication number
CN102403031B
CN102403031B CN201110264219.9A CN201110264219A CN102403031B CN 102403031 B CN102403031 B CN 102403031B CN 201110264219 A CN201110264219 A CN 201110264219A CN 102403031 B CN102403031 B CN 102403031B
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China
Prior art keywords
layer
magnetization
storage
storage layer
group
Prior art date
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Active
Application number
CN201110264219.9A
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English (en)
Chinese (zh)
Other versions
CN102403031A (zh
Inventor
细见政功
别所和宏
大森广之
肥后丰
山根阳
山根一阳
内田裕行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102403031A publication Critical patent/CN102403031A/zh
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Publication of CN102403031B publication Critical patent/CN102403031B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201110264219.9A 2010-09-14 2011-09-07 存储元件和存储装置 Active CN102403031B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010205086A JP5724256B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
JP2010-205086 2010-09-14

Publications (2)

Publication Number Publication Date
CN102403031A CN102403031A (zh) 2012-04-04
CN102403031B true CN102403031B (zh) 2016-08-17

Family

ID=45806597

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110264219.9A Active CN102403031B (zh) 2010-09-14 2011-09-07 存储元件和存储装置

Country Status (3)

Country Link
US (1) US8693239B2 (enExample)
JP (1) JP5724256B2 (enExample)
CN (1) CN102403031B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
JP5777588B2 (ja) 2012-09-21 2015-09-09 株式会社東芝 磁気抵抗効果素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071628A (zh) * 2006-05-12 2007-11-14 索尼株式会社 存储元件和存储器
CN101212018A (zh) * 2006-12-26 2008-07-02 索尼株式会社 存储元件和存储器
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP4970113B2 (ja) * 2007-03-30 2012-07-04 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP2008252037A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP4538614B2 (ja) * 2007-10-12 2010-09-08 株式会社東芝 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071628A (zh) * 2006-05-12 2007-11-14 索尼株式会社 存储元件和存储器
CN101212018A (zh) * 2006-12-26 2008-07-02 索尼株式会社 存储元件和存储器
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

Also Published As

Publication number Publication date
CN102403031A (zh) 2012-04-04
JP2012064611A (ja) 2012-03-29
US8693239B2 (en) 2014-04-08
US20120063217A1 (en) 2012-03-15
JP5724256B2 (ja) 2015-05-27

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