JP2012044035A - 半導体製造装置 - Google Patents

半導体製造装置 Download PDF

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Publication number
JP2012044035A
JP2012044035A JP2010184889A JP2010184889A JP2012044035A JP 2012044035 A JP2012044035 A JP 2012044035A JP 2010184889 A JP2010184889 A JP 2010184889A JP 2010184889 A JP2010184889 A JP 2010184889A JP 2012044035 A JP2012044035 A JP 2012044035A
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JP
Japan
Prior art keywords
power
manufacturing apparatus
semiconductor manufacturing
chamber
plasma
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Pending
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JP2010184889A
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English (en)
Japanese (ja)
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JP2012044035A5 (enExample
Inventor
Tetsuo Ono
哲郎 小野
Masaru Izawa
勝 伊澤
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010184889A priority Critical patent/JP2012044035A/ja
Publication of JP2012044035A publication Critical patent/JP2012044035A/ja
Publication of JP2012044035A5 publication Critical patent/JP2012044035A5/ja
Pending legal-status Critical Current

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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010184889A 2010-08-20 2010-08-20 半導体製造装置 Pending JP2012044035A (ja)

Priority Applications (1)

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JP2010184889A JP2012044035A (ja) 2010-08-20 2010-08-20 半導体製造装置

Applications Claiming Priority (1)

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JP2010184889A JP2012044035A (ja) 2010-08-20 2010-08-20 半導体製造装置

Publications (2)

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JP2012044035A true JP2012044035A (ja) 2012-03-01
JP2012044035A5 JP2012044035A5 (enExample) 2013-09-05

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JP2010184889A Pending JP2012044035A (ja) 2010-08-20 2010-08-20 半導体製造装置

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JP (1) JP2012044035A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021220329A1 (ja) * 2020-04-27 2021-11-04 株式会社日立ハイテク プラズマ処理装置
CN116390320A (zh) * 2023-05-30 2023-07-04 安徽农业大学 一种电子回旋共振放电装置及应用
US12444575B2 (en) 2022-10-19 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065386A (ja) * 1992-06-19 1994-01-14 Kobe Steel Ltd 電子サイクロトロン共鳴装置
JPH09289099A (ja) * 1996-02-20 1997-11-04 Hitachi Ltd プラズマ処理方法および装置
JP2000331998A (ja) * 1999-05-21 2000-11-30 Hitachi Ltd プラズマ処理装置
JP2005019346A (ja) * 2003-06-30 2005-01-20 Tokyo Electron Ltd プラズマ処理装置、これに用いるプラズマ放射アンテナ及び導波管
JP2006190877A (ja) * 2005-01-07 2006-07-20 Tokyo Electron Ltd プラズマ処理方法
JP2008130904A (ja) * 2006-11-22 2008-06-05 Tokyo Electron Ltd 太陽電池の製造方法及び太陽電池の製造装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065386A (ja) * 1992-06-19 1994-01-14 Kobe Steel Ltd 電子サイクロトロン共鳴装置
JPH09289099A (ja) * 1996-02-20 1997-11-04 Hitachi Ltd プラズマ処理方法および装置
JP2000331998A (ja) * 1999-05-21 2000-11-30 Hitachi Ltd プラズマ処理装置
JP2005019346A (ja) * 2003-06-30 2005-01-20 Tokyo Electron Ltd プラズマ処理装置、これに用いるプラズマ放射アンテナ及び導波管
JP2006190877A (ja) * 2005-01-07 2006-07-20 Tokyo Electron Ltd プラズマ処理方法
JP2008130904A (ja) * 2006-11-22 2008-06-05 Tokyo Electron Ltd 太陽電池の製造方法及び太陽電池の製造装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021220329A1 (ja) * 2020-04-27 2021-11-04 株式会社日立ハイテク プラズマ処理装置
WO2021220551A1 (ja) * 2020-04-27 2021-11-04 株式会社日立ハイテク プラズマ処理装置
JPWO2021220551A1 (enExample) * 2020-04-27 2021-11-04
KR20210134602A (ko) * 2020-04-27 2021-11-10 주식회사 히타치하이테크 플라스마 처리 장치
CN113874978A (zh) * 2020-04-27 2021-12-31 株式会社日立高新技术 等离子处理装置
JP7139528B2 (ja) 2020-04-27 2022-09-20 株式会社日立ハイテク プラズマ処理装置
TWI800798B (zh) * 2020-04-27 2023-05-01 日商日立全球先端科技股份有限公司 電漿處理裝置
KR102749255B1 (ko) * 2020-04-27 2025-01-03 주식회사 히타치하이테크 플라스마 처리 장치
CN113874978B (zh) * 2020-04-27 2025-03-18 株式会社日立高新技术 等离子处理装置
US12444575B2 (en) 2022-10-19 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus
CN116390320A (zh) * 2023-05-30 2023-07-04 安徽农业大学 一种电子回旋共振放电装置及应用

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