JP2012033731A5 - - Google Patents

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Publication number
JP2012033731A5
JP2012033731A5 JP2010172368A JP2010172368A JP2012033731A5 JP 2012033731 A5 JP2012033731 A5 JP 2012033731A5 JP 2010172368 A JP2010172368 A JP 2010172368A JP 2010172368 A JP2010172368 A JP 2010172368A JP 2012033731 A5 JP2012033731 A5 JP 2012033731A5
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JP
Japan
Prior art keywords
conductivity type
well region
epitaxial layer
region
power semiconductor
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JP2010172368A
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English (en)
Japanese (ja)
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JP5736683B2 (ja
JP2012033731A (ja
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Priority claimed from JP2010172368A external-priority patent/JP5736683B2/ja
Publication of JP2012033731A publication Critical patent/JP2012033731A/ja
Publication of JP2012033731A5 publication Critical patent/JP2012033731A5/ja
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JP2010172368A 2010-07-30 2010-07-30 電力用半導体素子 Active JP5736683B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010172368A JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010172368A JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

Publications (3)

Publication Number Publication Date
JP2012033731A JP2012033731A (ja) 2012-02-16
JP2012033731A5 true JP2012033731A5 (sh) 2012-11-22
JP5736683B2 JP5736683B2 (ja) 2015-06-17

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ID=45846786

Family Applications (1)

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JP2010172368A Active JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

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JP (1) JP5736683B2 (sh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9525057B2 (en) * 2012-05-15 2016-12-20 Mitsubishi Electric Corporation Semiconductor device
JP2016029707A (ja) 2014-07-24 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置
DE112014006788B4 (de) 2014-10-29 2022-05-12 Hitachi, Ltd. Halbleiterbauelement, Leistungsmodul und Leistungswandler
JP6683083B2 (ja) * 2016-09-21 2020-04-15 株式会社デンソー 半導体装置およびその製造方法
JP6870547B2 (ja) 2017-09-18 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
JP7099369B2 (ja) 2018-03-20 2022-07-12 株式会社デンソー 半導体装置およびその製造方法
JP2021012996A (ja) * 2019-07-09 2021-02-04 株式会社豊田中央研究所 半導体装置
JP2024048723A (ja) * 2022-09-28 2024-04-09 株式会社 日立パワーデバイス 半導体装置
CN117153886A (zh) * 2023-10-09 2023-12-01 深圳市港祥辉电子有限公司 一种石墨烯欧姆接触的金刚石平面栅vdmos器件及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1396030B1 (en) * 2001-04-11 2011-06-29 Silicon Semiconductor Corporation Vertical power semiconductor device and method of making the same
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP2006319213A (ja) * 2005-05-13 2006-11-24 Fuji Electric Device Technology Co Ltd 半導体装置
WO2007046254A1 (ja) * 2005-10-19 2007-04-26 Mitsubishi Electric Corporation Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
JP5646139B2 (ja) * 2008-09-26 2014-12-24 株式会社東芝 半導体装置

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