JP2012015354A5 - - Google Patents

Download PDF

Info

Publication number
JP2012015354A5
JP2012015354A5 JP2010151007A JP2010151007A JP2012015354A5 JP 2012015354 A5 JP2012015354 A5 JP 2012015354A5 JP 2010151007 A JP2010151007 A JP 2010151007A JP 2010151007 A JP2010151007 A JP 2010151007A JP 2012015354 A5 JP2012015354 A5 JP 2012015354A5
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate electrode
terminal
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010151007A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012015354A (ja
JP5479245B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010151007A priority Critical patent/JP5479245B2/ja
Priority claimed from JP2010151007A external-priority patent/JP5479245B2/ja
Priority to US13/052,014 priority patent/US8860146B2/en
Publication of JP2012015354A publication Critical patent/JP2012015354A/ja
Publication of JP2012015354A5 publication Critical patent/JP2012015354A5/ja
Application granted granted Critical
Publication of JP5479245B2 publication Critical patent/JP5479245B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010151007A 2010-07-01 2010-07-01 半導体装置 Expired - Fee Related JP5479245B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010151007A JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置
US13/052,014 US8860146B2 (en) 2010-07-01 2011-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010151007A JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2012015354A JP2012015354A (ja) 2012-01-19
JP2012015354A5 true JP2012015354A5 (enExample) 2012-10-04
JP5479245B2 JP5479245B2 (ja) 2014-04-23

Family

ID=45399063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010151007A Expired - Fee Related JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置

Country Status (2)

Country Link
US (1) US8860146B2 (enExample)
JP (1) JP5479245B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5904905B2 (ja) * 2012-08-23 2016-04-20 株式会社東芝 半導体装置
JP2016025155A (ja) * 2014-07-17 2016-02-08 株式会社東芝 半導体装置
CN113658948B (zh) * 2021-08-12 2022-06-07 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造方法
JP7738669B2 (ja) * 2021-11-15 2025-09-12 株式会社Magnolia White 半導体装置、表示装置、及び半導体集積回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387940B2 (ja) * 1992-05-28 2003-03-17 ローム株式会社 電源バックアップ用半導体装置
US5801418A (en) * 1996-02-12 1998-09-01 International Rectifier Corporation High voltage power integrated circuit with level shift operation and without metal crossover
JP4701886B2 (ja) 2005-07-13 2011-06-15 富士電機システムズ株式会社 半導体装置
JP2008227197A (ja) 2007-03-14 2008-09-25 Toyota Motor Corp 半導体装置
JP2009032968A (ja) * 2007-07-27 2009-02-12 Toshiba Corp 半導体装置及びその製造方法
JP5385679B2 (ja) * 2008-05-16 2014-01-08 旭化成エレクトロニクス株式会社 横方向半導体デバイスおよびその製造方法
JP5578805B2 (ja) * 2008-05-19 2014-08-27 キヤノン株式会社 半導体集積回路の保護回路及びその駆動方法

Similar Documents

Publication Publication Date Title
JP2013138191A5 (enExample)
JP2012069932A5 (ja) 半導体装置
JP2012009839A5 (ja) 半導体装置
JP2014038334A5 (enExample)
JP2012199528A5 (enExample)
JP2013084941A5 (ja) 半導体装置
JP2011029635A5 (ja) 半導体装置
JP2014030185A5 (ja) 半導体装置
JP2010152347A5 (ja) 半導体装置
JP2010092037A5 (ja) 半導体装置
JP2013055651A5 (ja) 半導体装置
JP2013236068A5 (ja) 半導体装置
JP2011147121A5 (ja) 半導体装置
JP2013008937A5 (enExample)
JP2012004556A5 (ja) 半導体装置
JP2013085237A5 (enExample)
JP2011238333A5 (ja) 半導体装置
JP2010186169A5 (ja) 半導体装置及び電子機器
JP2013149970A5 (enExample)
JP2011193452A5 (ja) 半導体装置
JP2011216879A5 (enExample)
JP2014241404A5 (enExample)
JP2013127632A5 (ja) 電子装置
JP2014006516A5 (ja) 半導体装置
JP2013229588A5 (ja) 半導体装置