JP5479245B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5479245B2
JP5479245B2 JP2010151007A JP2010151007A JP5479245B2 JP 5479245 B2 JP5479245 B2 JP 5479245B2 JP 2010151007 A JP2010151007 A JP 2010151007A JP 2010151007 A JP2010151007 A JP 2010151007A JP 5479245 B2 JP5479245 B2 JP 5479245B2
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Japan
Prior art keywords
source
region
semiconductor device
drain region
channel region
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Expired - Fee Related
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JP2010151007A
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English (en)
Japanese (ja)
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JP2012015354A (ja
JP2012015354A5 (enExample
Inventor
有希 中邑
岳人 壱岐村
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010151007A priority Critical patent/JP5479245B2/ja
Priority to US13/052,014 priority patent/US8860146B2/en
Publication of JP2012015354A publication Critical patent/JP2012015354A/ja
Publication of JP2012015354A5 publication Critical patent/JP2012015354A5/ja
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Publication of JP5479245B2 publication Critical patent/JP5479245B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2010151007A 2010-07-01 2010-07-01 半導体装置 Expired - Fee Related JP5479245B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010151007A JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置
US13/052,014 US8860146B2 (en) 2010-07-01 2011-03-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010151007A JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2012015354A JP2012015354A (ja) 2012-01-19
JP2012015354A5 JP2012015354A5 (enExample) 2012-10-04
JP5479245B2 true JP5479245B2 (ja) 2014-04-23

Family

ID=45399063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010151007A Expired - Fee Related JP5479245B2 (ja) 2010-07-01 2010-07-01 半導体装置

Country Status (2)

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US (1) US8860146B2 (enExample)
JP (1) JP5479245B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5904905B2 (ja) * 2012-08-23 2016-04-20 株式会社東芝 半導体装置
JP2016025155A (ja) * 2014-07-17 2016-02-08 株式会社東芝 半導体装置
CN113658948B (zh) * 2021-08-12 2022-06-07 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造方法
JP7738669B2 (ja) * 2021-11-15 2025-09-12 株式会社Magnolia White 半導体装置、表示装置、及び半導体集積回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387940B2 (ja) * 1992-05-28 2003-03-17 ローム株式会社 電源バックアップ用半導体装置
US5801418A (en) * 1996-02-12 1998-09-01 International Rectifier Corporation High voltage power integrated circuit with level shift operation and without metal crossover
JP4701886B2 (ja) 2005-07-13 2011-06-15 富士電機システムズ株式会社 半導体装置
JP2008227197A (ja) 2007-03-14 2008-09-25 Toyota Motor Corp 半導体装置
JP2009032968A (ja) * 2007-07-27 2009-02-12 Toshiba Corp 半導体装置及びその製造方法
JP5385679B2 (ja) * 2008-05-16 2014-01-08 旭化成エレクトロニクス株式会社 横方向半導体デバイスおよびその製造方法
JP5578805B2 (ja) * 2008-05-19 2014-08-27 キヤノン株式会社 半導体集積回路の保護回路及びその駆動方法

Also Published As

Publication number Publication date
US20120001269A1 (en) 2012-01-05
US8860146B2 (en) 2014-10-14
JP2012015354A (ja) 2012-01-19

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