JP2012009544A - 基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000003672 processing method Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 35
- 150000002500 ions Chemical class 0.000 claims description 133
- 238000000992 sputter etching Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 9
- 150000001450 anions Chemical class 0.000 abstract 5
- 150000001768 cations Chemical class 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 19
- 230000006870 function Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
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- 230000007246 mechanism Effects 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
【解決手段】プラズマRF及びバイアスRFをそれぞれパルス波として印加し、プラズマRF及びバイアスRFを共に印加してプラズマ中の正イオンによって基板にエッチング処理を施す正イオンエッチングステップ3bと、プラズマRF及びバイアスRFの印加を共に停止して処理室内で負イオンを発生させる負イオン生成ステップ3cと、プラズマRFの印加を停止し、バイアスRFを印加して負イオンを基板に引き込む負イオン引き込みステップ3aとを順次繰り返し、バイアスRFのデューティー比をプラズマRFのデューティー比よりも大きくする。
【選択図】図3
Description
11 処理室
12 サセプタ
30 シャワーヘッド
60 対象膜
61 ホール
62 正イオン
63 正イオン
64 負イオン
Claims (6)
- 内部にプラズマが生じる処理室と、該処理室内に配置され基板を載置する載置台と、該載置台に対向配置された電極と、を備える基板処理装置の、前記処理室内にプラズマ生成用の高周波電力を印加し、前記載置台に前記プラズマ生成用の高周波電力よりも周波数が低いバイアス用の高周波電力を印加して前記基板にプラズマエッチング処理を施す基板処理方法であって、
前記プラズマ生成用の高周波電力及び前記バイアス用の高周波電力をそれぞれパルス波として印加し、
前記プラズマ生成用の高周波電力及び前記バイアス用の高周波電力を共に印加して前記プラズマ中の正イオンによって前記基板にエッチング処理を施す正イオンエッチングステップと、
前記プラズマ生成用の高周波電力及び前記バイアス用の高周波電力の印加を共に停止して前記処理室内で負イオンを発生させる負イオン生成ステップと、
前記プラズマ生成用の高周波電力の印加を停止し、前記バイアス用の高周波電力を印加して前記負イオンを前記基板に引き込む負イオン引き込みステップと、を有し、
前記バイアス用の高周波電力のデューティー比を前記プラズマ生成用の高周波電力のデューティー比よりも大きくすることを特徴とする基板処理方法。 - 前記バイアス用の高周波電力のデューティー比は0.7〜0.8、前記プラズマ生成用の高周波電力のデューティー比は0.5〜0.6であることを特徴とする請求項1記載の基板処理方法。
- 前記正イオンエッチングステップを前記パルス波の1/2周期以上に亘って継続することを特徴とする請求項1又は2記載の基板処理方法。
- 前記負イオン生成ステップを前記パルス波の1/4周期以上に亘って継続することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記負イオン生成ステップを10〜30μsec間に亘って継続することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記正イオンエッチングステップ、前記負イオン生成ステップ及び前記負イオン引き込みステップを順次繰り返すことを特徴とする請求項1乃至5のいずれか1項に記載の基板処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010142740A JP5558224B2 (ja) | 2010-06-23 | 2010-06-23 | 基板処理方法 |
KR1020110060614A KR101807558B1 (ko) | 2010-06-23 | 2011-06-22 | 기판 처리 방법 |
CN201110176702.1A CN102299068B (zh) | 2010-06-23 | 2011-06-22 | 基板处理方法 |
US13/165,951 US8685267B2 (en) | 2010-06-23 | 2011-06-22 | Substrate processing method |
TW100121732A TWI515789B (zh) | 2010-06-23 | 2011-06-22 | Substrate handling method |
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JP2010142740A JP5558224B2 (ja) | 2010-06-23 | 2010-06-23 | 基板処理方法 |
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JP2012009544A true JP2012009544A (ja) | 2012-01-12 |
JP5558224B2 JP5558224B2 (ja) | 2014-07-23 |
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US (1) | US8685267B2 (ja) |
JP (1) | JP5558224B2 (ja) |
KR (1) | KR101807558B1 (ja) |
CN (1) | CN102299068B (ja) |
TW (1) | TWI515789B (ja) |
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KR20150041752A (ko) | 2013-10-09 | 2015-04-17 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
KR20150051897A (ko) | 2013-11-05 | 2015-05-13 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
KR20150051879A (ko) | 2013-11-05 | 2015-05-13 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
JP2015095493A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
KR20160033034A (ko) | 2014-09-17 | 2016-03-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
KR20160052173A (ko) * | 2014-11-04 | 2016-05-12 | 삼성전자주식회사 | 펄스 플라즈마의 고속 광학적 진단 시스템 |
KR20160102892A (ko) | 2015-02-23 | 2016-08-31 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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- 2011-06-22 KR KR1020110060614A patent/KR101807558B1/ko active IP Right Grant
- 2011-06-22 CN CN201110176702.1A patent/CN102299068B/zh active Active
- 2011-06-22 US US13/165,951 patent/US8685267B2/en active Active
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US8685267B2 (en) | 2014-04-01 |
TW201216356A (en) | 2012-04-16 |
CN102299068A (zh) | 2011-12-28 |
KR20110139660A (ko) | 2011-12-29 |
JP5558224B2 (ja) | 2014-07-23 |
KR101807558B1 (ko) | 2017-12-11 |
US20110318933A1 (en) | 2011-12-29 |
CN102299068B (zh) | 2014-07-23 |
TWI515789B (zh) | 2016-01-01 |
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