JP2011530423A - 改良された化学的機械的研磨システムのための方法 - Google Patents

改良された化学的機械的研磨システムのための方法 Download PDF

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Publication number
JP2011530423A
JP2011530423A JP2011523023A JP2011523023A JP2011530423A JP 2011530423 A JP2011530423 A JP 2011530423A JP 2011523023 A JP2011523023 A JP 2011523023A JP 2011523023 A JP2011523023 A JP 2011523023A JP 2011530423 A JP2011530423 A JP 2011530423A
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JP
Japan
Prior art keywords
polishing
substrate
polishing surface
fluid
pressing
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Pending
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JP2011523023A
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English (en)
Japanese (ja)
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JP2011530423A5 (enExample
Inventor
ユーリン ワン，
ロイ ナンゴイ，
アルペイ ユルマズ，
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011530423A publication Critical patent/JP2011530423A/ja
Publication of JP2011530423A5 publication Critical patent/JP2011530423A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2011523023A 2008-08-14 2009-07-15 改良された化学的機械的研磨システムのための方法 Pending JP2011530423A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/191,959 US20100041316A1 (en) 2008-08-14 2008-08-14 Method for an improved chemical mechanical polishing system
US12/191,959 2008-08-14
PCT/US2009/050663 WO2010019339A2 (en) 2008-08-14 2009-07-15 Method for an improved chemical mechanical polishing system

Publications (2)

Publication Number Publication Date
JP2011530423A true JP2011530423A (ja) 2011-12-22
JP2011530423A5 JP2011530423A5 (enExample) 2012-09-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011523023A Pending JP2011530423A (ja) 2008-08-14 2009-07-15 改良された化学的機械的研磨システムのための方法

Country Status (4)

Country Link
US (1) US20100041316A1 (enExample)
JP (1) JP2011530423A (enExample)
KR (1) KR20110055617A (enExample)
WO (1) WO2010019339A2 (enExample)

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US8616935B2 (en) * 2010-06-02 2013-12-31 Applied Materials, Inc. Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
US20110300776A1 (en) * 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
KR101105264B1 (ko) * 2010-09-02 2012-01-17 (주)레이나 Ｃｍｐ 공정 중 연마 완료 시점 검출 시스템 및 방법
US20130115862A1 (en) * 2011-11-09 2013-05-09 Applied Materials, Inc. Chemical mechanical polishing platform architecture
US20140020830A1 (en) * 2012-07-19 2014-01-23 Applied Materials, Inc. Carrier Head Sweep Motor Current for In-Situ Monitoring
US20140024299A1 (en) * 2012-07-19 2014-01-23 Wen-Chiang Tu Polishing Pad and Multi-Head Polishing System
CN105164793B (zh) * 2013-03-15 2018-01-02 应用材料公司 对于利用用于化学机械抛光的晶片及晶片边缘/斜角清洁模块的盘/垫清洁的设计
US9806677B2 (en) 2015-03-16 2017-10-31 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier adapted for noise suppression
KR102591906B1 (ko) * 2017-10-31 2023-10-20 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법
JP7763244B2 (ja) 2020-09-08 2025-10-31 アプライド マテリアルズ インコーポレイテッド Ｃｍｐ処理のための基板ハンドリングシステム及び方法
KR102838644B1 (ko) 2021-03-03 2025-07-28 어플라이드 머티어리얼스, 인코포레이티드 통합된 기판 정렬 스테이지를 갖는 건조 시스템
JP7732785B2 (ja) * 2021-06-30 2025-09-02 株式会社荏原製作所 液体供給装置および研磨装置

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JP2002110598A (ja) * 2000-09-26 2002-04-12 Toshiba Corp Ｃｍｐ装置
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JP2007109767A (ja) * 2005-10-12 2007-04-26 Mitsubishi Materials Corp Ｃｍｐコンディショナおよびその製造方法
JP2007331108A (ja) * 2007-08-20 2007-12-27 Ebara Corp 基板研磨装置および基板研磨方法

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JP2002540972A (ja) * 1999-04-01 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ２重ｃｍｐパッド調整装置
JP2001054857A (ja) * 1999-08-20 2001-02-27 Okamoto Machine Tool Works Ltd 曲率表面を有する長尺状ワ−クの製造方法およびそれに用いる平面ラップ装置
JP2002075939A (ja) * 2000-08-30 2002-03-15 Jsr Corp 化学機械研磨における終点の検出方法およびそれに用いる化学機械研磨用水系分散体
JP2002110598A (ja) * 2000-09-26 2002-04-12 Toshiba Corp Ｃｍｐ装置
JP2002355748A (ja) * 2001-05-30 2002-12-10 Sony Corp 化学的機械的研磨方法及び化学的機械的研磨装置
JP2005522025A (ja) * 2002-03-29 2005-07-21 ラム　リサーチ　コーポレーション 膜変化指示のための広帯域光学終点検出のシステム及び方法
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Also Published As

Publication number Publication date
US20100041316A1 (en) 2010-02-18
WO2010019339A2 (en) 2010-02-18
KR20110055617A (ko) 2011-05-25
WO2010019339A3 (en) 2010-06-03

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