JP2011525985A - 光学検査システムにおける動的照明 - Google Patents
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Abstract
【選択図】図3
Description
112 周縁部区域
114 アレイ区域
Claims (24)
- 半導体物体の少なくとも一部分を撮像するように構成された撮像システムと、
前記半導体物体の少なくとも一部分を照明するように構成された照明源と、
制御システムと、
を含み、
検査前設定シーケンス中に前記制御システムによって集光されたデータに基づく検査中に前記撮像システムに到達する照明を動的に調節するように構成され、
前記半導体物体のそれぞれの部分に対する1つ又はそれよりも多くの照明レベルを判断するために、該半導体物体が少なくとも一度撮像される検査前設定シーケンスを実行するように構成される、
ことを特徴とする光学検査ツール。 - 前記照明の動的な調節が、該照明の強度の変更を含むことを特徴とする請求項1に記載のツール。
- 前記照明の動的な調節が、該照明の偏光状態の変更を含むことを特徴とする請求項1に記載のツール。
- 前記照明の動的な調節が、該照明のスペクトルの変更を含むことを特徴とする請求項1に記載のツール。
- 前記半導体物体に到達する前記照明を調節するのに用いられる少なくとも1つの減衰器を更に含むことを特徴とする請求項1に記載のツール。
- 前記減衰器は、電気光学結晶を含むことを特徴とする請求項5に記載のツール。
- 前記照明源の少なくとも1つの特性は、調整することができ、前記照明は、該照明源を調整することによって調節されることを特徴とする請求項1に記載のツール。
- 少なくとも2つの異なる強度を利用して前記検査前設定シーケンス中に前記物体を照明するように構成されることを特徴とする請求項1に記載のツール。
- ツールが、前記半導体物体の各部分をフレーム単位で照明して撮像し、該照明の動的な調節が、少なくとも2つのフレーム間の該照明の変更を含むことを特徴とする請求項1に記載のツール。
- 前記照明は、前記フレームにおける1つ又はそれよりも多くの特徴の評価に基づいて調節されることを特徴とする請求項9に記載のツール。
- 前記検査前設定シーケンスは、
(i)初期照明レベルで前記半導体物体を走査する段階、
(ii)前記半導体物体の画像を作成する段階、
(iii)前記画像における飽和の量を評価する段階、及び
前記飽和の量に基づいて、前記画像における該飽和の量が所定の閾値未満になるまで段階(i)、(ii)、及び(iii)を繰り返す段階、
を含む、
ことを特徴とする請求項1に記載のツール。 - 撮像及び照明経路の少なくとも一方に制御可能な偏光子を更に含むことを特徴とする請求項1に記載のツール。
- 前記撮像及び照明経路の少なくとも一方に光の異なるスペクトル部分を減衰するように構成可能な制御可能減衰器を更に含むことを特徴とする請求項1に記載のツール。
- 複数の検出器を含み、複数のフレームを用いて半導体物体の少なくとも一部分を撮像するように構成された撮像システムと、
前記半導体物体の少なくとも一部分を照明するように構成された照明源と、
制御システムと、
を含み、
複数の検出器を用いて検査中に撮像される少なくとも1つのフレームに対して、該フレームに撮像された前記物体の第1の部分が第1の照明レベルを受け取り、かつ同じフレームに撮像された該物体の第2の部分が第2の照明レベルを受け取るように、検査中に前記撮像システムに到達する照明を動的に調節するように構成される、
ことを特徴とする光学検査ツール。 - 前記半導体物体のそれぞれの部分に対する特定の照明レベルを判断するために該半導体物体が少なくとも一度撮像される検査前設定シーケンスを実行するように構成されることを特徴とする請求項14に記載のツール。
- 前記半導体物体の前記照明の動的な調節が、照明光の光路内への制御可能な空間マスクの挿入を含むことを特徴とする請求項14に記載のツール。
- 前記空間マスクは、前記照明経路内に置かれ、かつ焦点外の前記物体上に結像されることを特徴とする請求項16に記載のツール。
- 前記空間マスクは、前記撮像経路内に置かれ、かつ焦点外の前記検出器上に結像されることを特徴とする請求項16に記載のツール。
- (i)第1の照明で検査ツール内の半導体物体の関連の区域を照明する段階、
(ii)前記関連の区域の画像を取得する段階、
(iii)前記画像の少なくとも1つの品質特性を評価する段階、
(iv)前記少なくとも1つの品質特性が1つ又はそれよりも多くの品質基準を満たすまで、異なる照明を用いて段階(i)、(ii)、及び(iii)を繰り返す段階、
(v)前記関連の区域を検査しながら、前記検査ツールの撮像システムに到達する照明を異なる照明による撮像中に得られた画像に基づいて動的に調節する段階を含む、前記半導体物体の検査を実行する段階、
を含むことを特徴とする電気光学検査方法。 - 少なくとも1つの品質特性が、前記画像における飽和の量を含み、前記第1及び異なる照明は、異なる強度の照明を含み、少なくとも1つの品質基準が、該画像における該飽和の量に対する許容可能な閾値を含むことを特徴とする請求項19に記載の方法。
- 段階(i)、(ii)、及び(iii)を1回又はそれよりも多く実行した後に得られる1つ又はそれよりも多くの画像から前記関連の区域のダイナミックレンジ画像を作成する段階を更に含み、
前記ダイナミックレンジ画像は、前記関連の区域の検査中に用いる照明のレベルを調節するのに用いられる、
ことを特徴とする請求項20に記載の方法。 - 前記関連の区域は、半導体ウェーハのダイを含み、
前記半導体物体の検査を実行する段階は、前記ダイに対するダイナミックレンジ画像に基づいて複数のダイを検査する段階を含む、
ことを特徴とする請求項19に記載の方法。 - 前記関連の区域のダイナミックレンジ画像を作成する段階は、
前記得られた画像内の前記関連の区域の各領域に対して、該画像において飽和状態にない該領域が撮像された最高照明強度を判断する段階、及び
各領域に対して、該領域が飽和状態になかったそれぞれの最高強度値によって該領域に対するピクセル値を分割する段階、
を含む、
ことを特徴とする請求項21に記載の方法。 - 前記照明を動的に調節する段階は、
前記半導体物体の所定の領域に対して、前記ダイナミックレンジ画像から該所定の領域の最大区域の反射率を判断する段階、及び
前記反射率に基づいて前記所定の領域に対する照明レベルを判断する段階、
を含む、
ことを特徴とする請求項21に記載の方法。
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US12/145,708 US7973921B2 (en) | 2008-06-25 | 2008-06-25 | Dynamic illumination in optical inspection systems |
US12/145,708 | 2008-06-25 | ||
PCT/IL2009/000572 WO2009156981A1 (en) | 2008-06-25 | 2009-06-09 | Dynamic illumination in optical inspection systems |
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JP2011525985A true JP2011525985A (ja) | 2011-09-29 |
JP2011525985A5 JP2011525985A5 (ja) | 2012-07-26 |
JP5211242B2 JP5211242B2 (ja) | 2013-06-12 |
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JP (1) | JP5211242B2 (ja) |
KR (1) | KR101258510B1 (ja) |
WO (1) | WO2009156981A1 (ja) |
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Also Published As
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US7973921B2 (en) | 2011-07-05 |
KR101258510B1 (ko) | 2013-04-26 |
KR20110034005A (ko) | 2011-04-04 |
US20090323052A1 (en) | 2009-12-31 |
WO2009156981A1 (en) | 2009-12-30 |
JP5211242B2 (ja) | 2013-06-12 |
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