JP2011523225A - Ledモジュール - Google Patents
Ledモジュール Download PDFInfo
- Publication number
- JP2011523225A JP2011523225A JP2011513078A JP2011513078A JP2011523225A JP 2011523225 A JP2011523225 A JP 2011523225A JP 2011513078 A JP2011513078 A JP 2011513078A JP 2011513078 A JP2011513078 A JP 2011513078A JP 2011523225 A JP2011523225 A JP 2011523225A
- Authority
- JP
- Japan
- Prior art keywords
- light
- reflector
- led module
- led
- absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000005284 excitation Effects 0.000 claims description 34
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 239000006096 absorbing agent Substances 0.000 abstract description 30
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 230000009102 absorption Effects 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910015802 BaSr Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- USEGQPUGEPSVQL-UHFFFAOYSA-N [Pr].[Zr] Chemical compound [Pr].[Zr] USEGQPUGEPSVQL-UHFFFAOYSA-N 0.000 description 1
- NFRFIMNIYLSHNB-UHFFFAOYSA-N [Sr].[Ba].[Si] Chemical compound [Sr].[Ba].[Si] NFRFIMNIYLSHNB-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- NNGHIEIYUJKFQS-UHFFFAOYSA-L hydroxy(oxo)iron;zinc Chemical compound [Zn].O[Fe]=O.O[Fe]=O NNGHIEIYUJKFQS-UHFFFAOYSA-L 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- KEHCHOCBAJSEKS-UHFFFAOYSA-N iron(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Fe+2] KEHCHOCBAJSEKS-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (5)
- 第1の波長範囲における励起光を発するLEDチップと、励起光を第2の波長範囲における変換光に変換する波長変換器と、変換光を透過させると共に、励起光を前記波長変換器上に反射するリフレクタとを有する光源であって、変換されていない励起光を吸収する吸収層を有することを特徴とする光源。
- 前記リフレクタが、少なくとも2つの異なる屈折率を有する少なくとも2つの異なる材料の複数の交互の層を有する多層リフレクタである、請求項1に記載の光源。
- 前記吸収層が、前記リフレクタの層間に位置されている、請求項2に記載の光源。
- 前記波長変換器が、前記リフレクタと前記LEDチップとの間に位置されている、請求項1乃至3の何れか一項に記載の光源。
- 前記リフレクタ、前記吸収層、前記波長変換器及び前記LEDチップは、単一のスタックを形成するように接続されている、請求項4に記載の光源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08157943 | 2008-06-10 | ||
EP08157943.5 | 2008-06-10 | ||
PCT/IB2009/052264 WO2009150561A1 (en) | 2008-06-10 | 2009-05-29 | Led module |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011523225A true JP2011523225A (ja) | 2011-08-04 |
Family
ID=41057322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011513078A Pending JP2011523225A (ja) | 2008-06-10 | 2009-05-29 | Ledモジュール |
Country Status (8)
Country | Link |
---|---|
US (3) | US8410504B2 (ja) |
EP (1) | EP2289114A1 (ja) |
JP (1) | JP2011523225A (ja) |
KR (1) | KR101639789B1 (ja) |
CN (1) | CN102057510B (ja) |
RU (1) | RU2503093C2 (ja) |
TW (1) | TWI463692B (ja) |
WO (1) | WO2009150561A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014508398A (ja) * | 2010-12-29 | 2014-04-03 | スリーエム イノベイティブ プロパティズ カンパニー | リモート蛍光体led構造 |
WO2016152913A1 (ja) * | 2015-03-23 | 2016-09-29 | 株式会社 東芝 | 照明システムおよび照明方法 |
JP2019029386A (ja) * | 2017-07-25 | 2019-02-21 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012091975A1 (en) | 2010-12-29 | 2012-07-05 | 3M Innovative Properties Company | Phosphor reflector assembly for remote phosphor led device |
TWI455364B (en) * | 2011-06-01 | 2014-10-01 | Light emitting diode package with filter | |
WO2013160796A2 (en) | 2012-04-25 | 2013-10-31 | Koninklijke Philips N.V. | A lighting assembly for providing a neutral color appearance, a lamp and a luminaire |
CN103378262B (zh) * | 2012-04-26 | 2017-02-01 | 青岛青扬众创新能源科技有限公司 | 发光二极管及其封装方法 |
US10879428B2 (en) | 2012-05-17 | 2020-12-29 | Micron Technology, Inc. | Solid-state transducer devices with selective wavelength reflectors and associated systems and methods |
WO2014123544A1 (en) * | 2013-02-11 | 2014-08-14 | Halliburton Energy Services, Inc. | Fluid analysis system with integrated computation element formed using atomic layer deposition |
JP6365592B2 (ja) * | 2016-05-31 | 2018-08-01 | 日亜化学工業株式会社 | 発光装置 |
US10276743B2 (en) * | 2017-02-14 | 2019-04-30 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus and manufacturing method thereof |
US10460839B1 (en) | 2018-11-29 | 2019-10-29 | Richard Ricci | Data mining of dental images |
CN115312561A (zh) * | 2019-12-24 | 2022-11-08 | 群创光电股份有限公司 | 电子装置 |
US20230207606A1 (en) * | 2021-12-29 | 2023-06-29 | Meta Platforms Technologies, Llc | Light emitting diode with angle-dependent optical filter |
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JPH1187770A (ja) * | 1997-09-01 | 1999-03-30 | Toshiba Electron Eng Corp | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
JP2004040124A (ja) * | 1997-09-02 | 2004-02-05 | Toshiba Corp | 半導体発光装置および画像表示装置 |
JP2005347263A (ja) * | 2004-06-04 | 2005-12-15 | Lumileds Lighting Us Llc | 照明装置における離間した波長変換 |
JP2006059625A (ja) * | 2004-08-19 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Led照明装置、ペンダント照明器具および街路灯 |
JP2006520095A (ja) * | 2003-01-27 | 2006-08-31 | スリーエム イノベイティブ プロパティズ カンパニー | 高分子ロングパスリフレクターを備えた蛍燐光体系光源 |
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2009
- 2009-05-29 CN CN200980121688.6A patent/CN102057510B/zh not_active Expired - Fee Related
- 2009-05-29 RU RU2010154668/28A patent/RU2503093C2/ru not_active IP Right Cessation
- 2009-05-29 JP JP2011513078A patent/JP2011523225A/ja active Pending
- 2009-05-29 US US12/994,867 patent/US8410504B2/en not_active Expired - Fee Related
- 2009-05-29 KR KR1020117000489A patent/KR101639789B1/ko active IP Right Grant
- 2009-05-29 EP EP09762088A patent/EP2289114A1/en not_active Withdrawn
- 2009-05-29 WO PCT/IB2009/052264 patent/WO2009150561A1/en active Application Filing
- 2009-06-08 TW TW098119109A patent/TWI463692B/zh not_active IP Right Cessation
-
2013
- 2013-03-12 US US13/795,511 patent/US9082937B2/en not_active Expired - Fee Related
- 2013-03-14 US US13/802,956 patent/US20130200416A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH1187770A (ja) * | 1997-09-01 | 1999-03-30 | Toshiba Electron Eng Corp | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
JP2004040124A (ja) * | 1997-09-02 | 2004-02-05 | Toshiba Corp | 半導体発光装置および画像表示装置 |
JP2006520095A (ja) * | 2003-01-27 | 2006-08-31 | スリーエム イノベイティブ プロパティズ カンパニー | 高分子ロングパスリフレクターを備えた蛍燐光体系光源 |
JP2005347263A (ja) * | 2004-06-04 | 2005-12-15 | Lumileds Lighting Us Llc | 照明装置における離間した波長変換 |
JP2006059625A (ja) * | 2004-08-19 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Led照明装置、ペンダント照明器具および街路灯 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014508398A (ja) * | 2010-12-29 | 2014-04-03 | スリーエム イノベイティブ プロパティズ カンパニー | リモート蛍光体led構造 |
WO2016152913A1 (ja) * | 2015-03-23 | 2016-09-29 | 株式会社 東芝 | 照明システムおよび照明方法 |
JPWO2016152913A1 (ja) * | 2015-03-23 | 2017-10-26 | 株式会社東芝 | 照明システムおよび照明方法 |
US10378709B2 (en) | 2015-03-23 | 2019-08-13 | Kabushiki Kaisha Toshiba | Illumination system for reproducing the color temperature range of solar light for illuminating exhibits |
JP2019029386A (ja) * | 2017-07-25 | 2019-02-21 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP7048873B2 (ja) | 2017-07-25 | 2022-04-06 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Also Published As
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CN102057510A (zh) | 2011-05-11 |
CN102057510B (zh) | 2014-08-13 |
WO2009150561A1 (en) | 2009-12-17 |
US8410504B2 (en) | 2013-04-02 |
TW201013985A (en) | 2010-04-01 |
EP2289114A1 (en) | 2011-03-02 |
US20130200416A1 (en) | 2013-08-08 |
RU2503093C2 (ru) | 2013-12-27 |
KR101639789B1 (ko) | 2016-07-15 |
US20130193838A1 (en) | 2013-08-01 |
US9082937B2 (en) | 2015-07-14 |
US20110073898A1 (en) | 2011-03-31 |
KR20110025964A (ko) | 2011-03-14 |
RU2010154668A (ru) | 2012-07-20 |
TWI463692B (zh) | 2014-12-01 |
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