RU2010154668A - Сид-модуль - Google Patents

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Publication number
RU2010154668A
RU2010154668A RU2010154668/28A RU2010154668A RU2010154668A RU 2010154668 A RU2010154668 A RU 2010154668A RU 2010154668/28 A RU2010154668/28 A RU 2010154668/28A RU 2010154668 A RU2010154668 A RU 2010154668A RU 2010154668 A RU2010154668 A RU 2010154668A
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RU
Russia
Prior art keywords
reflector
light source
light
absorbing layer
wavelength converter
Prior art date
Application number
RU2010154668/28A
Other languages
English (en)
Other versions
RU2503093C2 (ru
Inventor
СПРАНГ Хендрик А. ВАН (NL)
СПРАНГ Хендрик А. ВАН
Хендрик Й. Б. Ягт (NL)
Хендрик Й. Б. ЯГТ
Берно ХУНШЕ (NL)
Берно ХУНШЕ
Томас ДИДЕРИХ (NL)
Томас ДИДЕРИХ
Original Assignee
Конинклейке Филипс Электроникс Н.В. (Nl)
Конинклейке Филипс Электроникс Н.В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Конинклейке Филипс Электроникс Н.В. (Nl), Конинклейке Филипс Электроникс Н.В. filed Critical Конинклейке Филипс Электроникс Н.В. (Nl)
Publication of RU2010154668A publication Critical patent/RU2010154668A/ru
Application granted granted Critical
Publication of RU2503093C2 publication Critical patent/RU2503093C2/ru

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Filters (AREA)

Abstract

1. Источник света, который содержит ! - СИД-кристалл (20, 120, 220, 320, 420), приспособленный для излучения света возбуждения в первом диапазоне длин волн; ! - преобразователь длины волны (24, 124, 224, 324, 424), приспособленный для преобразования света возбуждения в преобразованный свет во втором диапазоне длин волн; ! - отражатель (26, 126, 226, 326, 426), приспособленный для пропускания преобразованного света и для отражения света возбуждения на преобразователь длины волны (24, 124, 224, 324, 424), отражатель (124, 224, 324) представляет собой многослойный отражатель и содержит несколько чередующихся слоев по меньшей мере из двух различных веществ по меньшей мере с двумя различными показателями преломления; и ! - поглощающий слой (28, 428), приспособленный для поглощения непреобразованного света возбуждения, источник света отличается тем, что поглощающий слой расположен между слоями отражателя (124, 224, 324). ! 2. Источник света по п.1, где преобразователь длины волны (24, 124, 224) расположен между отражателем (26, 126, 226) и СИД-кристаллом (20, 120, 220). ! 3. Источник света по п.2, где отражатель (126), поглощающий слой, преобразователь длины волны (124) и СИД-кристалл (120) соединены так, чтобы образовать единую стопку (112). ! 4. Источник света по любому из предыдущих пунктов, где по меньшей мере одна четвертая от общего числа отражающих слоев расположена на каждой стороне поглощающего слоя.

Claims (4)

1. Источник света, который содержит
- СИД-кристалл (20, 120, 220, 320, 420), приспособленный для излучения света возбуждения в первом диапазоне длин волн;
- преобразователь длины волны (24, 124, 224, 324, 424), приспособленный для преобразования света возбуждения в преобразованный свет во втором диапазоне длин волн;
- отражатель (26, 126, 226, 326, 426), приспособленный для пропускания преобразованного света и для отражения света возбуждения на преобразователь длины волны (24, 124, 224, 324, 424), отражатель (124, 224, 324) представляет собой многослойный отражатель и содержит несколько чередующихся слоев по меньшей мере из двух различных веществ по меньшей мере с двумя различными показателями преломления; и
- поглощающий слой (28, 428), приспособленный для поглощения непреобразованного света возбуждения, источник света отличается тем, что поглощающий слой расположен между слоями отражателя (124, 224, 324).
2. Источник света по п.1, где преобразователь длины волны (24, 124, 224) расположен между отражателем (26, 126, 226) и СИД-кристаллом (20, 120, 220).
3. Источник света по п.2, где отражатель (126), поглощающий слой, преобразователь длины волны (124) и СИД-кристалл (120) соединены так, чтобы образовать единую стопку (112).
4. Источник света по любому из предыдущих пунктов, где по меньшей мере одна четвертая от общего числа отражающих слоев расположена на каждой стороне поглощающего слоя.
RU2010154668/28A 2008-06-10 2009-05-29 Сид-модуль RU2503093C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08157943.5 2008-06-10
EP08157943 2008-06-10
PCT/IB2009/052264 WO2009150561A1 (en) 2008-06-10 2009-05-29 Led module

Publications (2)

Publication Number Publication Date
RU2010154668A true RU2010154668A (ru) 2012-07-20
RU2503093C2 RU2503093C2 (ru) 2013-12-27

Family

ID=41057322

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2010154668/28A RU2503093C2 (ru) 2008-06-10 2009-05-29 Сид-модуль

Country Status (8)

Country Link
US (3) US8410504B2 (ru)
EP (1) EP2289114A1 (ru)
JP (1) JP2011523225A (ru)
KR (1) KR101639789B1 (ru)
CN (1) CN102057510B (ru)
RU (1) RU2503093C2 (ru)
TW (1) TWI463692B (ru)
WO (1) WO2009150561A1 (ru)

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Also Published As

Publication number Publication date
CN102057510A (zh) 2011-05-11
JP2011523225A (ja) 2011-08-04
EP2289114A1 (en) 2011-03-02
US8410504B2 (en) 2013-04-02
US20110073898A1 (en) 2011-03-31
WO2009150561A1 (en) 2009-12-17
CN102057510B (zh) 2014-08-13
KR101639789B1 (ko) 2016-07-15
US20130193838A1 (en) 2013-08-01
KR20110025964A (ko) 2011-03-14
TW201013985A (en) 2010-04-01
TWI463692B (zh) 2014-12-01
US9082937B2 (en) 2015-07-14
US20130200416A1 (en) 2013-08-08
RU2503093C2 (ru) 2013-12-27

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Effective date: 20190530