CN102057510B - Led模块 - Google Patents

Led模块 Download PDF

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CN102057510B
CN102057510B CN200980121688.6A CN200980121688A CN102057510B CN 102057510 B CN102057510 B CN 102057510B CN 200980121688 A CN200980121688 A CN 200980121688A CN 102057510 B CN102057510 B CN 102057510B
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light
reflector
led
absorber
led module
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CN102057510A (zh
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H·A·范斯普拉格
H·J·B·贾格特
B·亨斯奇
T·迪德里奇
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Koninklijke Philips NV
Signify Holding BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

本发明涉及一种LED模块，所述模块将来自LED芯片(120)的泵浦光转换为另一波长的光，其从模块发出。转换在发光材料(124)的一部分中进行。LED模块的色纯度通过使用与吸收体相结合的反射体来减少泵浦光的任何泄漏而得以提高。在一个实施方式中，吸收体作为一个或几个薄吸收层集成于多层反射滤光体(126)的层之间；这可以产生对来自模块的泵浦光泄漏的更高的减少。

Description

LED模块
技术领域
本发明涉及光源，所述光源包括LED芯片，适合于发射在第一波长范围中的激发光；波长转换体，适合于将激发光转换为在第二波长范围中的经转换的光；以及反射体，适合于透射经转换的光，并且适合于将激发光反射至波长转换体上。
背景技术
US 7,245,072B2公开了一种LED模块，所述LED模块包括LED、荧光材料层以及双折射聚合物多层反射滤光体。位于反射滤光体与LED之间的荧光材料在LED所发出的紫外(UV)激发光的照射下发出可见光，而滤光体则起到从LED模块的光输出中去除剩余的、未被转换的UV光的作用。通过在反射体层中使用双折射聚合物，报告了对具有到滤光体上的倾斜入射角的UV光的更好的过滤。
然而，在反射体中使用多个双折射层会导致器件和/或制造方法变得复杂。
US-2007/0023762-A1公开了LED发光器件的另一示例，其中使用染料来吸收发出的蓝色光谱的一部分。
发明内容
本发明的一个目标是提供用于从LED模块的光输出中去除激发光的更为简单的技术。为此，提供了一种光源，所述光源包括：LED芯片，适合于发出在第一波长范围中的激发光；波长转换体，适合于将激发光转换为在第二波长范围中的经转换的光；反射体，适合于透射经转换的光，并且适合于将激发光反射至波长转换体上；以及吸收层，布置用于吸收未被转换的激发光。吸收层协助降低发射的激发光的量。
反射体是包括具有至少两种不同折射率的至少两种不同材料的多个交替层的多层反射体。这样的反射体可被赋予在基本上垂直的光入射角上的高波长选择性。
吸收层位于反射体的层之间。这一配置可以更进一步地减少以偏离反射滤光体的表面法线的入射角撞击到反射体上的透射的激发光的量，并且/或者减少在高效滤光体的制造中所需的处理步骤的数量。
优选地，反射体层的总数的至少四分之一位于吸收体的每一侧上。
优选地，波长转换体位于反射体与LED芯片之间，因为这一配置从转换效率的角度看是有益的。优选地，反射体、吸收层、波长转换体以及LED芯片共同形成单个器件。这是制造成本低廉的非常紧凑和高效的配置。
优选地，多层反射体和吸收体具有小于2000nm的总厚度。
附图说明
现在将参考示出本发明的当前优选实施方式的附图来更加详细地描述本发明的这一和其他方面。
图1是包括LED芯片、发光转换体、反射体以及吸收体的LED模块的示意剖视图。
图2是图1中的LED和发光转换体的示意剖视图。
图3是具有与LED芯片相集成的发光转换体、反射体以及吸收体的LED模块的示意剖视图。
图4是图3中的LED的示意剖视图。
图5是示例说明了多层反射体的透射率的图表。
图6是示例说明了包含有吸收体层的多层反射体的透射率的图表。
图7是LED模块的示意剖视图，其示出了发光转换体和反射体的一个备选几何配置。
图8是图7中的LED、发光转换体和反射体的示意剖视图。
图9是LED模块的示意剖视图，其示出了发光转换体和反射体的又一备选几何配置。
图10是图9中的LED和反射体的示意剖视图。
图11是LED模块的示意剖视图，其示出了发光转换体和反射体的另一备选几何配置。
图12是图11中的LED和反射体的示意剖视图。
具体实施方式
发光二极管，即LED，被广泛用于多种应用。通常，在LED模块中集成发光转换体，用以产生色彩与最初从LED发出的光不同的光。
为了使用发光转换获得发射自LED模块的光的纯正色彩，重要的是不允许任何激发光从LED模块出射。这在其中所需色温被标准和规定所指定的应用中尤为重要。为此，有时在LED模块中安置滤光体，以从LED模块输出中过滤掉任何剩余的激发光。
图1示意性地示例说明了包括LED 12的LED模块10的一个示例性实施方式。LED 12经由端子14、16被供应以电流，并且LED 12的输出光经由基本上为半球形的透镜18耦合到LED模块10之外。LED被布置用以发出紫外(UV)光，而荧光剂层24则将UV光转换为白光，即转换为红、绿和蓝光的混合。UV光的完全转换并未实现，因为这样的话荧光剂层将过厚，导致对红、绿和蓝光的高重吸收。因此，为了减少UV光从模块10的发射，透镜18包括反射体26，其反射UV光并透射可见光。透镜表面上的波长选择性吸收层28显著减少UV光的任何泄漏。吸收层28的波长选择性是这样的：其吸收在UV波长范围中比在可见波长范围中更高。在整个这一公开内容中，吸收层被定义为包括具有在激发波长范围中大于0.005的消光系数k的一种或多种材料的层。吸收层拟位于从LED芯片和/或发光转换体的发光面到LED模块光输出面的光路之中；在此意义上而言，诸如电接线、不透明LED芯片底座等结构不被认为是吸收体层。
图2更为详细地示出图1的LED 12和荧光剂层24。LED芯片20位于底座22上。电流通过导线30被提供到LED芯片20的上部电极。
图3示意性地示例说明了包括LED 112的LED模块110的一个示例性实施方式。
图4更为详细地示出了图3的LED 112。LED芯片120倒装芯片地安装在底座122上。电流通过通路孔中的导体130被供应到LED芯片120的上部电极。LED芯片120发射出在400-470nm的波长范围中并具有大约450nm的峰值波长的蓝色激发光。激发光由附着到LED芯片120或沉积于其上的发光荧光材料层124转换为大约在600nm的琥珀色光；在这一特定例子中，荧光材料为其包含(BaSr)2Si5N8:Eu，即掺杂以铕的钡锶硅氮化物。其发射波长特性可通过改变钡与锶之间的比率而变化；在此例中，使用了85％的Ba和15％的Sr。在层124之上有多层反射体涂层126，所述涂层126合并有吸收层。将反射体直接置于层之上具有将未被转换的激发光的更大部分反射回层并从而提高转换效率的优点。
多层反射体是一种类型的干涉滤光体，其包括几个具有不同折射率的交替层；它们的波长响应可以相对自由地设计，并且它们可被设计用以产生对激发光的高度抑制。多层反射体因此非常适合于从LED模块输出中去除激发光。
然而，因为典型的干涉滤光体涂层的透明度随撞击在干涉滤光体涂层上的光的入射角而变化，所以一些激发光将会由于LED与波长转换体通常不产生准直输出的事实而通过滤光体泄漏。
表1给出了未装设内部吸收体层的多层反射体的结构的一个例子；其对应的作为相对于反射体表面法线的入射角的函数的透射率在图5中给出。滤光体由具有大约为1.46的折射率的SiO2和具有大约为2.39的折射率的Nb2O5的交替层所构成。第1层相邻于转换体，而第41层则相邻于具有大约为1.5的折射率的透镜；d表示各层以纳米为单位的厚度。
层   材料    d(nm)
1    Nb2O5   22.43
2    SiO2    47.46
3    Nb2O5   58.51
4    SiO2    37.19
5    Nb2O5   56.08
6    SiO2    58.00
7    Nb2O5   167.17
8    SiO2    61.99
9    Nb2O5   163.83
10   SiO2    62.79
11   Nb2O5   164.02
12   SiO2    86.66
13   Nb2O5   31.59
14   SiO2    86.17
15   Nb2O5   38.59
16   SiO2    78.94
17   Nb2O5   56.06
18   SiO2    32.39
19   Nb2O5   81.56
20   SiO2    39.43
21   Nb2O5   179.54
22   SiO2    55.61
23   Nb2O5   164.17
24   SiO2    67.07
25   Nb2O5   162.12
26   SiO2    60.98
27   Nb2O5   74.36
28   SiO2    21.77
29   Nb2O5   63.28
30   SiO2    52.35
31   Nb2O5   295.69
32   SiO2    51.12
33   Nb2O5   159.13
34   SiO2    71.99
35   Nb2O5   154.03
36   SiO2    72.77
37   Nb2O5   153.48
38   SiO2    63.71
39   Nb2O5   146.28
40   SiO2    77.15
41   Nb2O5   5.71
总厚度       3583.18
表1
表2给出了以上参照图2-图3描述的LED模块的多层反射体126的结构的一个例子，其中滤光体合并有集成的Fe2O3吸收体层。滤光体的作为入射角的函数的透射率在图6中给出。第1层相邻于转换体124，而第17层则相邻于包含有SiO2的透镜18。注意：该反射滤光体的厚度大约为表1的反射滤光体的厚度的三分之一。同样，吸收体层是反射体的组成部分并且贡献于器件的反射特性，因为Fe2O3具有3.11的折射率，显著不同于相邻的Nb2O5层的折射率。另一方面，在薄吸收Fe2O3层周围的反射滤光体多层结构提高了薄Fe2O3层的吸收。
层   材料     d(nm)
1    Nb2O5    149.61
2    SiO2     46.59
3    Nb2O5    162.56
4    SiO2     59.38
5    Nb2O5    160.02
6    SiO2     62.68
7    Nb2O5    78.00
8    Fe2O3    8.40
9    Nb2O5    80.66
10   SiO2     64.37
11   Nb2O5    46.08
12   SiO2     72.79
13   Nb2O5    31.75
14   SiO2     95.16
15   Nb2O5    44.42
16   SiO2     53.56
17   Nb2O5    31.17
总厚度        1247.19
表2
图5-图6中的图表的两个滤光体的角度依赖性的显著差异令人印象深刻。通过在滤光体中集成仅一个薄吸收体层，不仅可以使用更少的处理步骤来制作滤光体并将滤光体制作的更薄；还可以显著减少蓝光的透射率的角度依赖性，并且去除在低角度上的较高阶透射尖刺。
图7示意性地示例说明了包括LED 212以及单独的荧光剂/反射体/吸收体部分224/226的LED模块210的一个示例性实施方式。在图8中更为详细地示例说明了LED 212和荧光剂/反射体/吸收体部分的配置，其示出多层反射体226，所述多层反射体226包括沉积于荧光剂层224之上的多个透明的、交替的反射体层以及多个集成吸收体层。
图9和图10示例说明了LED模块的一个备选几何结构，其中LED芯片320和发光转换体324并排安装在底座322上。来自LED芯片的激发光由也并入了吸收体层的基本上为抛物面形的多层反射体326反射至发光转换体324上。反射体326被布置用以透射来自发光转换体的经转换的光，而吸收层则减少反射体326对任何以大幅度倾斜角度撞击到反射体326上的激发光的透射。
LED芯片320与发光转换体324的几何分离还使得以下情况成为可能：围绕发光转换体安置并延伸单独的半球形吸收体(未示出)，使得来自发光转换体的经转换的光将以垂直入射角穿过单独的吸收体，而通过反射体泄漏的激发光则将以倾斜角度穿过单独的吸收体。这将使激发光通过吸收体的路径比经转换的光更长。
图11和图12示出了这样一个实施方式：其示例说明LED芯片与发光转换体的几何分离如何分别实现激发光与经转换的光的不同吸收水平并从而贡献于LED模块的色温的改善。波长选择性反射体426将来自LED芯片420的光反射至发光转换体424上。来自发光转换体的经转换的光穿过反射体，并于随后以垂直入射角通过吸收体428。任何可能通过波长选择性反射体426泄漏的来自LED芯片420的激发光将以倾斜角度穿过吸收体428。这将使激发光通过吸收体428的路径比经转换的光更长。
概括而言，本发明涉及将来自LED芯片的泵浦光转换为从LED模块发射的另一波长的光的LED模块。转换在发光材料的一部分中进行。LED模块的色纯度通过使用与吸收体相结合的反射体来减少泵浦光的任何泄漏而得以提高。在一个实施方式中，吸收体作为一个或几个薄吸收层集成于多层干涉滤光体的层之间；这可以产生对来自模块的泵浦光泄漏的更高的减少。
本领域中的技术人员认识到，本发明绝不仅限于上述优选实施方式。相反，在随附权利要求书的范围内可以有许多改进和改变。例如，本发明不限于Fe2O3吸收层；也可以使用在激发波长范围中具有吸收特征的其他材料，例如但不限于：锌铁氧化物、钛铁氧化物、钒氧化物、铋氧化物、铜氧化物、钒酸铋、硅酸锆镨或者其任何混合物等。
本发明既不限于的发光层，也不限于其他磷光材料；可以使用任何将入射电磁辐射的至少一部分转换为具有标志特征的电磁辐射的原子或分子种类或者固态化合物，诸如荧光染料或者发光量子点等。
在以上的例子中，多层反射体包括Nb2O5和SiO2的交替层。随附权利要求书可以使用和涵盖其他具有不同折射率的两种或多种不同材料的组合。此外，反射体不限于多层反射体；可以使用任何类型的能够反射激发波长并于此同时透射经转换的波长的波长选择性反射体。吸收体可以包括集成于反射体中的一个或几个吸收层，或者其可以是位于LED模块中的其他位置处的单独的吸收体。尽管整个LED模块优选地包含于单个壳体之中，但其也可以在多个单独的壳体之间划分。器件的不同部分可以在不同模块之间划分，这些不同模块在协同工作时获得与所请求保护的功能相同的功能。此外，尽管在以上例子中使用蓝色或UV光来生成琥珀色或白色光，但随附权利要求书也涵盖其他组合。本发明不限于发出可见光的LED芯片或者发光转换体；它们也可以在IR和UV区域中发光。本发明也不限于以宽带光谱发出激发光的LED。并入了任何类型的光反馈和受激发射的窄带LED，诸如二极管激光器等，也在权利要求书的范围之内。可以有利地结合公开于以上描述中的不同实施方式中的特征。
在本公开内容中所使用的量词“一个”、“一种”等不排除复数。权利要求书中的任何附图标记都不应解释为对范围的限制。

Claims (1)

1.一种光源，包括：
LED芯片，适合于发出在第一波长范围中的激发光；
波长转换体，适合于将激发光转换为在第二波长范围中的经转换的光；
反射体，适合于透射经转换的光，并且适合于将激发光反射至所述波长转换体上，所述反射体是多层反射体并包括具有至少两种不同折射率的至少两种不同材料的多个交替层，
其中所述光源还包括单独的吸收体，使得来自所述波长转换体的经转换的光将以垂直入射角穿过所述单独的吸收体，通过所述反射体泄漏的激发光将以倾斜角度穿过所述单独的吸收体。
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