JP2011515855A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011515855A5 JP2011515855A5 JP2011500951A JP2011500951A JP2011515855A5 JP 2011515855 A5 JP2011515855 A5 JP 2011515855A5 JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011515855 A5 JP2011515855 A5 JP 2011515855A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- chamber
- bias power
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 12
- 239000010410 layer Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 239000011241 protective layer Substances 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 1
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3866408P | 2008-03-21 | 2008-03-21 | |
US61/038,664 | 2008-03-21 | ||
US4057008P | 2008-03-28 | 2008-03-28 | |
US61/040,570 | 2008-03-28 | ||
US9482008P | 2008-09-05 | 2008-09-05 | |
US61/094,820 | 2008-09-05 | ||
PCT/US2009/037647 WO2009117565A2 (fr) | 2008-03-21 | 2009-03-19 | Procédé et appareil d’un système de gravure de substrat et traitement |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011515855A JP2011515855A (ja) | 2011-05-19 |
JP2011515855A5 true JP2011515855A5 (fr) | 2012-05-10 |
JP5608157B2 JP5608157B2 (ja) | 2014-10-15 |
Family
ID=41091536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011500951A Active JP5608157B2 (ja) | 2008-03-21 | 2009-03-19 | 基板エッチングシステム及びプロセスの方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090272717A1 (fr) |
JP (1) | JP5608157B2 (fr) |
KR (1) | KR20100128333A (fr) |
CN (2) | CN102446739B (fr) |
TW (1) | TWI538045B (fr) |
WO (1) | WO2009117565A2 (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011021539A1 (fr) * | 2009-08-20 | 2011-02-24 | 東京エレクトロン株式会社 | Dispositif de traitement au plasma et procédé de traitement au plasma |
US8501629B2 (en) * | 2009-12-23 | 2013-08-06 | Applied Materials, Inc. | Smooth SiConi etch for silicon-containing films |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US9023227B2 (en) | 2011-06-30 | 2015-05-05 | Applied Materials, Inc. | Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber |
JP6068462B2 (ja) * | 2011-06-30 | 2017-01-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置 |
CN103159163B (zh) * | 2011-12-19 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法及基片处理设备 |
US9679751B2 (en) | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
US20130255784A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Gas delivery systems and methods of use thereof |
US9887095B2 (en) | 2013-03-12 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for an etch process with silicon concentration control |
US9488315B2 (en) * | 2013-03-15 | 2016-11-08 | Applied Materials, Inc. | Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber |
JP6101227B2 (ja) * | 2014-03-17 | 2017-03-22 | 株式会社東芝 | プラズマダイシング方法およびプラズマダイシング装置 |
US10100407B2 (en) * | 2014-12-19 | 2018-10-16 | Lam Research Corporation | Hardware and process for film uniformity improvement |
US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
TW201634738A (zh) * | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | 用於在空間上分離之原子層沉積腔室的經改良注射器 |
TWI701357B (zh) * | 2015-03-17 | 2020-08-11 | 美商應用材料股份有限公司 | 用於膜沉積的脈衝化電漿 |
JP6444794B2 (ja) * | 2015-03-30 | 2018-12-26 | Sppテクノロジーズ株式会社 | 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置 |
US10957561B2 (en) * | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10825659B2 (en) * | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
US10256075B2 (en) * | 2016-01-22 | 2019-04-09 | Applied Materials, Inc. | Gas splitting by time average injection into different zones by fast gas valves |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
JP6392266B2 (ja) * | 2016-03-22 | 2018-09-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6541596B2 (ja) * | 2016-03-22 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP6378234B2 (ja) * | 2016-03-22 | 2018-08-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
CN112469665B (zh) * | 2018-05-22 | 2023-10-17 | Etx公司 | 用于二维材料的转移的方法和装置 |
JP7218226B2 (ja) * | 2019-03-22 | 2023-02-06 | 株式会社アルバック | プラズマエッチング方法 |
US20210118734A1 (en) * | 2019-10-22 | 2021-04-22 | Semiconductor Components Industries, Llc | Plasma-singulated, contaminant-reduced semiconductor die |
US11342195B1 (en) | 2021-02-04 | 2022-05-24 | Tokyo Electron Limited | Methods for anisotropic etch of silicon-based materials with selectivity to organic materials |
US11940819B1 (en) * | 2023-01-20 | 2024-03-26 | Applied Materials, Inc. | Mass flow controller based fast gas exchange |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62143427A (ja) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | 処理ガス供給装置 |
DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
US6694915B1 (en) * | 2000-07-06 | 2004-02-24 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6409933B1 (en) * | 2000-07-06 | 2002-06-25 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6414648B1 (en) * | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6462481B1 (en) * | 2000-07-06 | 2002-10-08 | Applied Materials Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6593244B1 (en) * | 2000-09-11 | 2003-07-15 | Applied Materials Inc. | Process for etching conductors at high etch rates |
FR2834382B1 (fr) * | 2002-01-03 | 2005-03-18 | Cit Alcatel | Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect |
TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Ind Co Ltd | Plasma processing method and apparatus |
US6846746B2 (en) * | 2002-05-01 | 2005-01-25 | Applied Materials, Inc. | Method of smoothing a trench sidewall after a deep trench silicon etch process |
US6849554B2 (en) * | 2002-05-01 | 2005-02-01 | Applied Materials, Inc. | Method of etching a deep trench having a tapered profile in silicon |
FR2842387B1 (fr) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre |
US7074723B2 (en) * | 2002-08-02 | 2006-07-11 | Applied Materials, Inc. | Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system |
US6924235B2 (en) * | 2002-08-16 | 2005-08-02 | Unaxis Usa Inc. | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
US6900133B2 (en) * | 2002-09-18 | 2005-05-31 | Applied Materials, Inc | Method of etching variable depth features in a crystalline substrate |
US20040097077A1 (en) * | 2002-11-15 | 2004-05-20 | Applied Materials, Inc. | Method and apparatus for etching a deep trench |
US20040157457A1 (en) * | 2003-02-12 | 2004-08-12 | Songlin Xu | Methods of using polymer films to form micro-structures |
US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
KR100549204B1 (ko) * | 2003-10-14 | 2006-02-02 | 주식회사 리드시스템 | 실리콘 이방성 식각 방법 |
US20050112891A1 (en) * | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
JP4593402B2 (ja) * | 2005-08-25 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | エッチング方法およびエッチング装置 |
KR100655445B1 (ko) * | 2005-10-04 | 2006-12-08 | 삼성전자주식회사 | 플라즈마 처리 장치 및 방법, 그리고 반도체 제조 설비 |
US8088248B2 (en) * | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
JP2008205436A (ja) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | 微細構造体の製造方法 |
JP2009182059A (ja) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | ドライエッチング方法 |
-
2009
- 2009-03-19 JP JP2011500951A patent/JP5608157B2/ja active Active
- 2009-03-19 US US12/407,548 patent/US20090272717A1/en not_active Abandoned
- 2009-03-19 CN CN201110402772.4A patent/CN102446739B/zh active Active
- 2009-03-19 KR KR1020107023432A patent/KR20100128333A/ko not_active Application Discontinuation
- 2009-03-19 CN CN2009801103642A patent/CN101978479A/zh active Pending
- 2009-03-19 WO PCT/US2009/037647 patent/WO2009117565A2/fr active Application Filing
- 2009-03-20 TW TW098109255A patent/TWI538045B/zh active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011515855A5 (fr) | ||
US10832909B2 (en) | Atomic layer etch, reactive precursors and energetic sources for patterning applications | |
KR102598660B1 (ko) | 기판 에지들에서 이면 증착을 감소시키고 두께 변화들을 완화하기 위한 시스템들 및 방법들 | |
WO2009117565A3 (fr) | Procédé et appareil d’un système de gravure de substrat et traitement | |
CN102459704B (zh) | 用于蚀刻的方法和设备 | |
CN104674191B (zh) | 多模式薄膜沉积设备以及薄膜沉积方法 | |
KR102549682B1 (ko) | 펌핑 배기 시스템 내에서 폐기물 축적을 감소시키기 위한 시스템들 및 방법들 | |
CN103620734B (zh) | 用于快速气体交换、快速气体切换以及可编程的气体输送的方法与装置 | |
WO2009085564A4 (fr) | Gravure à l'aide d'un masque de réserve à vitesse de gravure élevée | |
WO2006137541A1 (fr) | Élément constituant pour dispositif de traitement de semi-conducteur et son procédé de production | |
TW201546314A (zh) | 用以降低金屬氧化物與金屬氮化物膜中的表面粗糙度之射頻循環清洗 | |
JP2011108782A5 (fr) | ||
JP2010530643A5 (fr) | ||
US20210340670A1 (en) | In situ protective coating of chamber components for semiconductor processing | |
CN102534569A (zh) | 一种常压辉光等离子体增强原子层沉积装置 | |
WO2009122113A3 (fr) | Procede de production de nanostructures sur un substrat d'oxyde metallique, et dispositif forme de couches minces | |
JP7358301B2 (ja) | ウエハガス放出のためのプラズマエンハンストアニールチャンバ | |
TW201433217A (zh) | 用以清潔沉積室的方法及設備 | |
CN102615068B (zh) | Mocvd设备的清洁方法 | |
WO2021092197A1 (fr) | Dépôt de couche atomique assisté par plasma avec augmentation de puissance de radiofréquence | |
JP2011151183A (ja) | プラズマcvd装置及びプラズマcvd成膜方法 | |
JP2009041095A (ja) | 成膜装置およびそのクリーニング方法 | |
JP2012049349A5 (ja) | 基板処理装置及び半導体装置の製造方法 | |
JP2011228546A (ja) | プラズマcvd装置およびそのクリーニング方法 | |
JP2021017651A (ja) | バッチ式基板処理装置及びその運用方法 |