JP2011512007A - プラズマチャンバの電極用の多相rf電力 - Google Patents
プラズマチャンバの電極用の多相rf電力 Download PDFInfo
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- JP2011512007A JP2011512007A JP2010545239A JP2010545239A JP2011512007A JP 2011512007 A JP2011512007 A JP 2011512007A JP 2010545239 A JP2010545239 A JP 2010545239A JP 2010545239 A JP2010545239 A JP 2010545239A JP 2011512007 A JP2011512007 A JP 2011512007A
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- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
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Abstract
Description
Claims (16)
- RF電力をプラズマチャンバに結合するための装置であって、
複数のRF接続点を備える電極を備えたプラズマチャンバと、
第1のRF電源を含む複数のRF電源であって、各RF電源が、前記RF接続点のうちそれぞれに対応するRF接続点に接続された出力端を有する、複数のRF電源と、を備え、
前記第1のRF電源が、その出力端に第1のRF電力信号を生成し、
前記第1のRF電源以外の各RF電源が、そのそれぞれの出力端に、前記第1のRF電力信号と同じ周波数、および前記第1のRF電力信号に対して相対的な、異なる非ゼロ位相オフセットを有するそれぞれのRF電力信号を生成する、装置。 - RF発振器と、
複数の位相シフタと、をさらに備え、
各位相シフタが、前記RF発振器の出力端に接続された入力端を有し、
各RF電源が、同期入力端を有し、
前記第1のRF電源以外の各RF電源の前記同期入力端が、前記位相シフタのうちそれぞれに対応する位相シフタの出力端に接続され、
前記第1のRF電源の前記同期入力端が、前記RF発振器の前記出力端に接続される、請求項1に記載の装置。 - 前記RF発振器の前記出力端と前記第1のRF電源の前記同期入力端との間に接続された位相シフタをさらに備える、請求項2に記載の装置。
- RF接続点の数およびRF電源の数が、少なくとも4である、請求項1に記載の装置。
- RF接続点の数およびRF電源の数が、少なくとも4であり、
前記RF接続点が、前記電極の2次元表面上に配置され、
前記RF接続点の位置が、前記表面の両次元に沿って分配される、請求項1に記載の装置。 - 前記RF接続点が、前記電極の矩形表面上に配置され、
前記RF接続点の位置が、前記矩形表面のX軸およびY軸の両方に沿って分配される、請求項1に記載の装置。 - 前記電極が、マニホルド後壁と、シャワーヘッドと、前記シャワーヘッドを前記マニホルド後壁に接続するサスペンションとを備えるガス入口マニホルドであり、
前記RF接続点が、前記マニホルド後壁上にある、請求項1に記載の装置。 - 複数のインピーダンス整合回路網をさらに備え、
各インピーダンス整合回路網が、前記RF電源のうちそれぞれに対応するRF電源の前記出力端と、前記RF接続点のうちそれぞれに対応するRF接続点との間に接続される、請求項1に記載の装置。 - RF電力をプラズマチャンバに結合するための装置であって、
複数のRF接続点を備える電極を備えたプラズマチャンバと、
第1のRF電源を含む複数のRF電源であって、各RF電源が、前記RF接続点のうちそれぞれに対応するRF接続点に接続された出力端を有する、複数のRF電源と、を備え、
前記第1のRF電源が、その出力端に第1のRF電力信号を生成し、
前記第1のRF電源以外の各RF電源が、そのそれぞれの出力端に、前記第1のRF電力信号と同じ周波数、および前記第1のRF電力信号に対して相対的な、調整可能な位相オフセットを有するそれぞれのRF電力信号を生成する、装置。 - RF発振器と、
複数の位相シフタと、をさらに備え、
各位相シフタが、前記RF発振器の出力端に接続された入力端を有し、
各RF電源が、同期入力端を有し、
前記第1のRF電源以外の各RF電源の前記同期入力端が、前記位相シフタのうちそれぞれに対応する位相シフタの出力端に接続され、
前記第1のRF電源の前記同期入力端が、前記RF発振器の前記出力端に接続される、請求項9に記載の装置。 - 前記RF発振器の前記出力端と前記第1のRF電源の前記同期入力端との間に接続された位相シフタをさらに備える、請求項10に記載の装置。
- RF接続点の数およびRF電源の数が、少なくとも4である、請求項9に記載の装置。
- RF接続点の数およびRF電源の数が、少なくとも4であり、
前記RF接続点が、前記電極の2次元表面上に配置され、
前記RF接続点の位置が、前記表面の両次元に沿って分配される、請求項9に記載の装置。 - 前記RF接続点が、前記電極の矩形表面上に配置され、
前記RF接続点の位置が、前記矩形表面のX軸およびY軸の両方に沿って分配される、請求項9に記載の装置。 - 前記電極が、マニホルド後壁と、シャワーヘッドと、前記シャワーヘッドを前記マニホルド後壁に接続するサスペンションとを備えるガス入口マニホルドであり、
前記RF接続点が、前記マニホルド後壁上にある、請求項9に記載の装置。 - 複数のインピーダンス整合回路網をさらに備え、
各インピーダンス整合回路網が、前記RF電源のうちそれぞれに対応するRF電源の前記出力端と、前記RF接続点のうちそれぞれに対応するRF接続点との間に接続される、請求項9に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US2511108P | 2008-01-31 | 2008-01-31 | |
US61/025,111 | 2008-01-31 | ||
PCT/US2009/032776 WO2010044895A2 (en) | 2008-01-31 | 2009-01-31 | Multiple phase rf power for electrode of plasma chamber |
Publications (3)
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JP2011512007A true JP2011512007A (ja) | 2011-04-14 |
JP2011512007A5 JP2011512007A5 (ja) | 2012-07-12 |
JP5749020B2 JP5749020B2 (ja) | 2015-07-15 |
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JP2010545239A Active JP5749020B2 (ja) | 2008-01-31 | 2009-01-31 | Rf電力をプラズマチャンバに結合するための装置 |
Country Status (7)
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US (1) | US8298625B2 (ja) |
EP (1) | EP2245912A2 (ja) |
JP (1) | JP5749020B2 (ja) |
KR (1) | KR101199644B1 (ja) |
CN (1) | CN101933402B (ja) |
TW (1) | TWI435660B (ja) |
WO (1) | WO2010044895A2 (ja) |
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- 2009-01-31 KR KR1020107019116A patent/KR101199644B1/ko active IP Right Grant
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JP2001284271A (ja) * | 2000-01-20 | 2001-10-12 | Applied Materials Inc | プラズマチャンバ用の可撓的に吊り下げられたガス分配マニホールド |
JP2001274099A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
JP2005220368A (ja) * | 2004-02-03 | 2005-08-18 | Ulvac Japan Ltd | プラズマcvd装置及び成膜方法 |
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JP2017199694A (ja) * | 2011-11-16 | 2017-11-02 | 東京エレクトロン株式会社 | 複数の高周波(rf)電力結合素子を利用してプラズマ特性を制御するrf電力結合システム |
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TWI435660B (zh) | 2014-04-21 |
JP5749020B2 (ja) | 2015-07-15 |
WO2010044895A2 (en) | 2010-04-22 |
KR101199644B1 (ko) | 2012-11-08 |
US8298625B2 (en) | 2012-10-30 |
EP2245912A2 (en) | 2010-11-03 |
TW200944064A (en) | 2009-10-16 |
CN101933402B (zh) | 2013-03-27 |
US20090202741A1 (en) | 2009-08-13 |
CN101933402A (zh) | 2010-12-29 |
KR20100105898A (ko) | 2010-09-30 |
WO2010044895A3 (en) | 2010-06-10 |
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