JP2011511473A5 - - Google Patents
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- Publication number
- JP2011511473A5 JP2011511473A5 JP2010545860A JP2010545860A JP2011511473A5 JP 2011511473 A5 JP2011511473 A5 JP 2011511473A5 JP 2010545860 A JP2010545860 A JP 2010545860A JP 2010545860 A JP2010545860 A JP 2010545860A JP 2011511473 A5 JP2011511473 A5 JP 2011511473A5
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- support surface
- chamber
- plasma
- seasoning film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000011194 food seasoning agent Nutrition 0.000 claims 17
- 238000000034 method Methods 0.000 claims 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 10
- 238000000151 deposition Methods 0.000 claims 6
- 238000006243 chemical reaction Methods 0.000 claims 4
- 238000005468 ion implantation Methods 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910001423 beryllium ion Inorganic materials 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 238000007654 immersion Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/069,424 | 2008-02-06 | ||
| US12/069,424 US7968439B2 (en) | 2008-02-06 | 2008-02-06 | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
| PCT/US2009/000369 WO2009099519A1 (en) | 2008-02-06 | 2009-01-19 | Plasma immersion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011511473A JP2011511473A (ja) | 2011-04-07 |
| JP2011511473A5 true JP2011511473A5 (https=) | 2011-10-06 |
| JP4926280B2 JP4926280B2 (ja) | 2012-05-09 |
Family
ID=40932102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545860A Expired - Fee Related JP4926280B2 (ja) | 2008-02-06 | 2009-01-19 | チャンバ内面上に純粋またはほぼ純粋なシリコンのシーズニング層を用いるプラズマ浸漬イオン注入方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7968439B2 (https=) |
| JP (1) | JP4926280B2 (https=) |
| KR (1) | KR101160006B1 (https=) |
| CN (1) | CN101939821B (https=) |
| TW (1) | TW200949912A (https=) |
| WO (1) | WO2009099519A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
| EP2422359A4 (en) * | 2009-04-20 | 2013-07-03 | Applied Materials Inc | REINFORCED ABSORPTION OF RESTFLUORRADIKALEN WITH THE HELP OF A SILICONE COATING ON PROCESS CHAMBER WALLS |
| US8999847B2 (en) | 2010-08-16 | 2015-04-07 | Applied Materials, Inc. | a-Si seasoning effect to improve SiN run-to-run uniformity |
| US20130288465A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Methods for filling high aspect ratio features on substrates |
| CN103887135B (zh) * | 2012-12-24 | 2016-05-18 | 中国科学院微电子研究所 | 离子注入系统 |
| US9745658B2 (en) | 2013-11-25 | 2017-08-29 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ALD films |
| US9548188B2 (en) * | 2014-07-30 | 2017-01-17 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
| US10325800B2 (en) * | 2014-08-26 | 2019-06-18 | Applied Materials, Inc. | High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials |
| US9828672B2 (en) * | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| US10023956B2 (en) * | 2015-04-09 | 2018-07-17 | Lam Research Corporation | Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems |
| US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
| JP6830030B2 (ja) * | 2017-04-27 | 2021-02-17 | 新光電気工業株式会社 | 静電チャック及び基板固定装置 |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US10242893B2 (en) | 2017-06-20 | 2019-03-26 | Applied Materials, Inc. | Method and apparatus for de-chucking a workpiece using a swing voltage sequence |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| US11761079B2 (en) | 2017-12-07 | 2023-09-19 | Lam Research Corporation | Oxidation resistant protective layer in chamber conditioning |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| US12371781B2 (en) | 2018-10-19 | 2025-07-29 | Lam Research Corporation | In situ protective coating of chamber components for semiconductor processing |
| US11430654B2 (en) * | 2019-11-27 | 2022-08-30 | Applied Materials, Inc. | Initiation modulation for plasma deposition |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
| JPH1197430A (ja) * | 1997-07-14 | 1999-04-09 | Applied Materials Inc | 高密度プラズマプロセスチャンバ |
| US7288491B2 (en) | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US7183177B2 (en) * | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
| US7037813B2 (en) | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
| WO2002015650A2 (en) * | 2000-08-11 | 2002-02-21 | Applied Materials, Inc. | Externally excited torroidal plasma source |
| US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| JP2004014868A (ja) * | 2002-06-07 | 2004-01-15 | Tokyo Electron Ltd | 静電チャック及び処理装置 |
| US20050260354A1 (en) * | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
| US7767561B2 (en) * | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
| US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
| US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
-
2008
- 2008-02-06 US US12/069,424 patent/US7968439B2/en not_active Expired - Fee Related
-
2009
- 2009-01-19 KR KR1020107019876A patent/KR101160006B1/ko active Active
- 2009-01-19 CN CN2009801042371A patent/CN101939821B/zh not_active Expired - Fee Related
- 2009-01-19 JP JP2010545860A patent/JP4926280B2/ja not_active Expired - Fee Related
- 2009-01-19 WO PCT/US2009/000369 patent/WO2009099519A1/en not_active Ceased
- 2009-02-06 TW TW098103901A patent/TW200949912A/zh unknown
-
2011
- 2011-05-05 US US13/101,843 patent/US8168519B2/en active Active
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