TW200949912A - Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces - Google Patents

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces Download PDF

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Publication number
TW200949912A
TW200949912A TW098103901A TW98103901A TW200949912A TW 200949912 A TW200949912 A TW 200949912A TW 098103901 A TW098103901 A TW 098103901A TW 98103901 A TW98103901 A TW 98103901A TW 200949912 A TW200949912 A TW 200949912A
Authority
TW
Taiwan
Prior art keywords
workpiece
chamber
gas
plasma
film
Prior art date
Application number
TW098103901A
Other languages
English (en)
Chinese (zh)
Inventor
Shijian Li
Kartik Ramaswamy
Hiroji Hanawa
Seon-Mee Cho
Biagio Gallo
Dongwon Choi
Majeed A Foad
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200949912A publication Critical patent/TW200949912A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW098103901A 2008-02-06 2009-02-06 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces TW200949912A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/069,424 US7968439B2 (en) 2008-02-06 2008-02-06 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Publications (1)

Publication Number Publication Date
TW200949912A true TW200949912A (en) 2009-12-01

Family

ID=40932102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103901A TW200949912A (en) 2008-02-06 2009-02-06 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Country Status (6)

Country Link
US (2) US7968439B2 (https=)
JP (1) JP4926280B2 (https=)
KR (1) KR101160006B1 (https=)
CN (1) CN101939821B (https=)
TW (1) TW200949912A (https=)
WO (1) WO2009099519A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
EP2422359A4 (en) * 2009-04-20 2013-07-03 Applied Materials Inc REINFORCED ABSORPTION OF RESTFLUORRADIKALEN WITH THE HELP OF A SILICONE COATING ON PROCESS CHAMBER WALLS
US8999847B2 (en) 2010-08-16 2015-04-07 Applied Materials, Inc. a-Si seasoning effect to improve SiN run-to-run uniformity
US20130288465A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Methods for filling high aspect ratio features on substrates
CN103887135B (zh) * 2012-12-24 2016-05-18 中国科学院微电子研究所 离子注入系统
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
US9548188B2 (en) * 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6830030B2 (ja) * 2017-04-27 2021-02-17 新光電気工業株式会社 静電チャック及び基板固定装置
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10242893B2 (en) 2017-06-20 2019-03-26 Applied Materials, Inc. Method and apparatus for de-chucking a workpiece using a swing voltage sequence
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
US11430654B2 (en) * 2019-11-27 2022-08-30 Applied Materials, Inc. Initiation modulation for plasma deposition

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
JPH1197430A (ja) * 1997-07-14 1999-04-09 Applied Materials Inc 高密度プラズマプロセスチャンバ
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
WO2002015650A2 (en) * 2000-08-11 2002-02-21 Applied Materials, Inc. Externally excited torroidal plasma source
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP2004014868A (ja) * 2002-06-07 2004-01-15 Tokyo Electron Ltd 静電チャック及び処理装置
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7691755B2 (en) * 2007-05-15 2010-04-06 Applied Materials, Inc. Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Also Published As

Publication number Publication date
CN101939821B (zh) 2013-01-30
US20090197401A1 (en) 2009-08-06
KR20100120199A (ko) 2010-11-12
KR101160006B1 (ko) 2012-06-25
US7968439B2 (en) 2011-06-28
US20110207307A1 (en) 2011-08-25
CN101939821A (zh) 2011-01-05
JP4926280B2 (ja) 2012-05-09
WO2009099519A1 (en) 2009-08-13
JP2011511473A (ja) 2011-04-07
US8168519B2 (en) 2012-05-01

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