JP2011508429A5 - - Google Patents

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Publication number
JP2011508429A5
JP2011508429A5 JP2010539610A JP2010539610A JP2011508429A5 JP 2011508429 A5 JP2011508429 A5 JP 2011508429A5 JP 2010539610 A JP2010539610 A JP 2010539610A JP 2010539610 A JP2010539610 A JP 2010539610A JP 2011508429 A5 JP2011508429 A5 JP 2011508429A5
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JP
Japan
Prior art keywords
conduits
conduit
port
growth chamber
epitaxial growth
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Application number
JP2010539610A
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English (en)
Japanese (ja)
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JP2011508429A (ja
JP5587205B2 (ja
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Priority claimed from PCT/US2008/085715 external-priority patent/WO2009082608A1/en
Publication of JP2011508429A publication Critical patent/JP2011508429A/ja
Publication of JP2011508429A5 publication Critical patent/JP2011508429A5/ja
Application granted granted Critical
Publication of JP5587205B2 publication Critical patent/JP5587205B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010539610A 2007-12-20 2008-12-05 エピタキシャル成長基板に前駆体ガスを送出するための装置 Expired - Fee Related JP5587205B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1552407P 2007-12-20 2007-12-20
US61/015,524 2007-12-20
PCT/US2008/085715 WO2009082608A1 (en) 2007-12-20 2008-12-05 Apparatus for delivering precursor gases to an epitaxial growth substrate

Publications (3)

Publication Number Publication Date
JP2011508429A JP2011508429A (ja) 2011-03-10
JP2011508429A5 true JP2011508429A5 (https=) 2012-01-26
JP5587205B2 JP5587205B2 (ja) 2014-09-10

Family

ID=40340674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010539610A Expired - Fee Related JP5587205B2 (ja) 2007-12-20 2008-12-05 エピタキシャル成長基板に前駆体ガスを送出するための装置

Country Status (6)

Country Link
US (1) US9175419B2 (https=)
EP (1) EP2227576B1 (https=)
JP (1) JP5587205B2 (https=)
KR (1) KR101579217B1 (https=)
CN (1) CN101849042B (https=)
WO (1) WO2009082608A1 (https=)

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KR101094913B1 (ko) * 2006-06-09 2011-12-16 소이텍 Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
KR101379410B1 (ko) 2006-11-22 2014-04-11 소이텍 3-5족 반도체 재료들의 대량생산을 위한 설비
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
EP2094406B1 (en) 2006-11-22 2015-10-14 Soitec Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
US8382898B2 (en) * 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
KR101330156B1 (ko) * 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
SG173052A1 (en) * 2009-03-03 2011-08-29 Soitec Silicon On Insulator Gas injectors for cvd systems with the same
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
FR2968678B1 (fr) 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
FR2968830B1 (fr) 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
US20120225203A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
FR2979637B1 (fr) * 2011-09-07 2015-02-20 Soitec Silicon On Insulator Systemes de depot comprenant un four de gaz precurseur a l'interieur d'une chambre de reaction et procedes relatifs
CN103732791B (zh) * 2011-08-22 2016-04-27 Soitec公司 包括反应室内的前体气体炉的沉积系统及相关方法
US20130047918A1 (en) * 2011-08-22 2013-02-28 Soitec Deposition systems including a precursor gas furnace within a reaction chamber, and related methods
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
US20130145989A1 (en) * 2011-12-12 2013-06-13 Intermolecular, Inc. Substrate processing tool showerhead
US20150099065A1 (en) * 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
DE102018130140A1 (de) * 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
CN111172595A (zh) * 2020-03-06 2020-05-19 帝尔激光科技(无锡)有限公司 管用进气排气装置
US12456614B2 (en) * 2022-05-27 2025-10-28 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability

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KR101330156B1 (ko) 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
SG173052A1 (en) 2009-03-03 2011-08-29 Soitec Silicon On Insulator Gas injectors for cvd systems with the same

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