CN101849042B - 向外延生长基片输送前体气体的装置 - Google Patents

向外延生长基片输送前体气体的装置 Download PDF

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Publication number
CN101849042B
CN101849042B CN200880114701.0A CN200880114701A CN101849042B CN 101849042 B CN101849042 B CN 101849042B CN 200880114701 A CN200880114701 A CN 200880114701A CN 101849042 B CN101849042 B CN 101849042B
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China
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gas
ports
growth chamber
conduits
injector
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Expired - Fee Related
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CN200880114701.0A
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English (en)
Chinese (zh)
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CN101849042A (zh
Inventor
尚塔尔·艾尔纳
克里斯蒂安·J·韦尔克霍芬
罗纳德·托马斯·小伯特伦
埃德·林多
丹尼斯·L·古德温
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Soitec SA
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Soitec SA
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200880114701.0A 2007-12-20 2008-12-05 向外延生长基片输送前体气体的装置 Expired - Fee Related CN101849042B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1552407P 2007-12-20 2007-12-20
US61/015,524 2007-12-20
PCT/US2008/085715 WO2009082608A1 (en) 2007-12-20 2008-12-05 Apparatus for delivering precursor gases to an epitaxial growth substrate

Publications (2)

Publication Number Publication Date
CN101849042A CN101849042A (zh) 2010-09-29
CN101849042B true CN101849042B (zh) 2014-06-18

Family

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CN200880114701.0A Expired - Fee Related CN101849042B (zh) 2007-12-20 2008-12-05 向外延生长基片输送前体气体的装置

Country Status (6)

Country Link
US (1) US9175419B2 (https=)
EP (1) EP2227576B1 (https=)
JP (1) JP5587205B2 (https=)
KR (1) KR101579217B1 (https=)
CN (1) CN101849042B (https=)
WO (1) WO2009082608A1 (https=)

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KR101094913B1 (ko) * 2006-06-09 2011-12-16 소이텍 Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
KR101379410B1 (ko) 2006-11-22 2014-04-11 소이텍 3-5족 반도체 재료들의 대량생산을 위한 설비
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
EP2094406B1 (en) 2006-11-22 2015-10-14 Soitec Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
US8382898B2 (en) * 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
KR101330156B1 (ko) * 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
SG173052A1 (en) * 2009-03-03 2011-08-29 Soitec Silicon On Insulator Gas injectors for cvd systems with the same
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
FR2968678B1 (fr) 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
FR2968830B1 (fr) 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
US20120225203A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
FR2979637B1 (fr) * 2011-09-07 2015-02-20 Soitec Silicon On Insulator Systemes de depot comprenant un four de gaz precurseur a l'interieur d'une chambre de reaction et procedes relatifs
CN103732791B (zh) * 2011-08-22 2016-04-27 Soitec公司 包括反应室内的前体气体炉的沉积系统及相关方法
US20130047918A1 (en) * 2011-08-22 2013-02-28 Soitec Deposition systems including a precursor gas furnace within a reaction chamber, and related methods
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
US20130145989A1 (en) * 2011-12-12 2013-06-13 Intermolecular, Inc. Substrate processing tool showerhead
US20150099065A1 (en) * 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
DE102018130140A1 (de) * 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
CN111172595A (zh) * 2020-03-06 2020-05-19 帝尔激光科技(无锡)有限公司 管用进气排气装置
US12456614B2 (en) * 2022-05-27 2025-10-28 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability

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US20010047764A1 (en) * 1997-08-11 2001-12-06 Robert C. Cook Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
CN2568672Y (zh) * 2002-09-05 2003-08-27 西安电子科技大学 光化学气相沉积设备
US20040129215A1 (en) * 2001-04-11 2004-07-08 Johannes Kaeppeler Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
CN1865497A (zh) * 2006-06-10 2006-11-22 中国科学技术大学 一种连续化学气相淀积的方法与装置
CN101090998A (zh) * 2004-08-02 2007-12-19 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器

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US20010047764A1 (en) * 1997-08-11 2001-12-06 Robert C. Cook Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
US20040129215A1 (en) * 2001-04-11 2004-07-08 Johannes Kaeppeler Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
CN2568672Y (zh) * 2002-09-05 2003-08-27 西安电子科技大学 光化学气相沉积设备
CN101090998A (zh) * 2004-08-02 2007-12-19 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
CN1865497A (zh) * 2006-06-10 2006-11-22 中国科学技术大学 一种连续化学气相淀积的方法与装置

Also Published As

Publication number Publication date
JP2011508429A (ja) 2011-03-10
JP5587205B2 (ja) 2014-09-10
WO2009082608A1 (en) 2009-07-02
EP2227576B1 (en) 2015-06-03
US9175419B2 (en) 2015-11-03
KR20100100975A (ko) 2010-09-15
KR101579217B1 (ko) 2015-12-21
EP2227576A1 (en) 2010-09-15
US20100258053A1 (en) 2010-10-14
CN101849042A (zh) 2010-09-29

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