JP2011507272A - 簡易な光抽出方式の下方変換発光ダイオード - Google Patents

簡易な光抽出方式の下方変換発光ダイオード Download PDF

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Publication number
JP2011507272A
JP2011507272A JP2010538013A JP2010538013A JP2011507272A JP 2011507272 A JP2011507272 A JP 2011507272A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A JP2011507272 A JP 2011507272A
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Japan
Prior art keywords
led
wafer
wavelength converter
light
wavelength
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JP2010538013A
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Japanese (ja)
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JP2011507272A5 (https=
Inventor
エル． スミス，テリー
ダブリュ． ケリー，トミー
エー． ハーセ，マイケル
エー． レザーデール，キャサリン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2011507272A publication Critical patent/JP2011507272A/ja
Publication of JP2011507272A5 publication Critical patent/JP2011507272A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
JP2010538013A 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード Pending JP2011507272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10
PCT/US2008/082766 WO2009075972A2 (en) 2007-12-10 2008-11-07 Down-converted light emitting diode with simplified light extraction

Publications (2)

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JP2011507272A true JP2011507272A (ja) 2011-03-03
JP2011507272A5 JP2011507272A5 (https=) 2011-12-22

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JP2010538013A Pending JP2011507272A (ja) 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード

Country Status (7)

Country Link
US (1) US20100295075A1 (https=)
EP (1) EP2232591A4 (https=)
JP (1) JP2011507272A (https=)
KR (1) KR20100097205A (https=)
CN (1) CN101897038B (https=)
TW (1) TWI453943B (https=)
WO (1) WO2009075972A2 (https=)

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JP2019508732A (ja) * 2016-01-27 2019-03-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 変換要素、および、このタイプの変換要素を備えた放射放出半導体装置
US12389717B2 (en) 2021-02-26 2025-08-12 Nichia Corporation Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

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US8338838B2 (en) * 2007-12-28 2012-12-25 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
KR20110031953A (ko) * 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체
CN102124582B (zh) 2008-06-26 2013-11-06 3M创新有限公司 半导体光转换构造
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
DE102009020127B4 (de) * 2009-03-25 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiode
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009048401A1 (de) * 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
CN102270724B (zh) * 2010-06-01 2014-04-09 陈文彬 发光二极管晶片级色彩纯化的方法
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
CN102593269A (zh) * 2011-01-11 2012-07-18 旭明光电股份有限公司 白光led装置及其制造方法
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
JP6396419B2 (ja) 2013-03-29 2018-09-26 フィリップス ライティング ホールディング ビー ヴィ 波長変換素子を有する発光装置
JP2015072751A (ja) * 2013-10-01 2015-04-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
WO2015112946A1 (en) 2014-01-27 2015-07-30 Osram Sylvania Inc. Ceramic wavelength converter having a high reflectivity reflector
US9529969B2 (en) * 2014-01-27 2016-12-27 RDFISolutions, LLC Event based tracking, health management, and patient and treatment monitoring system
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

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KR101515319B1 (ko) 2011-03-23 2015-04-24 오스람 옵토 세미컨덕터스 게엠베하 발광 반도체 소자
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Also Published As

Publication number Publication date
EP2232591A4 (en) 2013-12-25
WO2009075972A3 (en) 2009-08-20
US20100295075A1 (en) 2010-11-25
TWI453943B (zh) 2014-09-21
TW200939538A (en) 2009-09-16
CN101897038A (zh) 2010-11-24
WO2009075972A2 (en) 2009-06-18
CN101897038B (zh) 2012-08-29
EP2232591A2 (en) 2010-09-29
KR20100097205A (ko) 2010-09-02

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