TWI453943B - 具簡化之光擷取的降頻轉換發光二極體 - Google Patents

具簡化之光擷取的降頻轉換發光二極體 Download PDF

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Publication number
TWI453943B
TWI453943B TW097145372A TW97145372A TWI453943B TW I453943 B TWI453943 B TW I453943B TW 097145372 A TW097145372 A TW 097145372A TW 97145372 A TW97145372 A TW 97145372A TW I453943 B TWI453943 B TW I453943B
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TW
Taiwan
Prior art keywords
led
wavelength converter
light
wavelength
layer
Prior art date
Application number
TW097145372A
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English (en)
Chinese (zh)
Other versions
TW200939538A (en
Inventor
李 史密斯 泰瑞
艾爾伯特 赫斯 麥克
威爾森 凱莉 湯米
安 麗瑟戴爾 凱瑟琳
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３Ｍ新設資產公司
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Filing date
Publication date
Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW200939538A publication Critical patent/TW200939538A/zh
Application granted granted Critical
Publication of TWI453943B publication Critical patent/TWI453943B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Landscapes

  • Led Device Packages (AREA)
  • Optical Filters (AREA)
TW097145372A 2007-12-10 2008-11-24 具簡化之光擷取的降頻轉換發光二極體 TWI453943B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10

Publications (2)

Publication Number Publication Date
TW200939538A TW200939538A (en) 2009-09-16
TWI453943B true TWI453943B (zh) 2014-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097145372A TWI453943B (zh) 2007-12-10 2008-11-24 具簡化之光擷取的降頻轉換發光二極體

Country Status (7)

Country Link
US (1) US20100295075A1 (https=)
EP (1) EP2232591A4 (https=)
JP (1) JP2011507272A (https=)
KR (1) KR20100097205A (https=)
CN (1) CN101897038B (https=)
TW (1) TWI453943B (https=)
WO (1) WO2009075972A2 (https=)

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CN102124582B (zh) 2008-06-26 2013-11-06 3M创新有限公司 半导体光转换构造
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
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DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
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DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
CN102270724B (zh) * 2010-06-01 2014-04-09 陈文彬 发光二极管晶片级色彩纯化的方法
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
CN102593269A (zh) * 2011-01-11 2012-07-18 旭明光电股份有限公司 白光led装置及其制造方法
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
JP6396419B2 (ja) 2013-03-29 2018-09-26 フィリップス ライティング ホールディング ビー ヴィ 波長変換素子を有する発光装置
JP2015072751A (ja) * 2013-10-01 2015-04-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
WO2015112946A1 (en) 2014-01-27 2015-07-30 Osram Sylvania Inc. Ceramic wavelength converter having a high reflectivity reflector
US9529969B2 (en) * 2014-01-27 2016-12-27 RDFISolutions, LLC Event based tracking, health management, and patient and treatment monitoring system
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
EP4050666A1 (en) 2021-02-26 2022-08-31 Nichia Corporation Semiconductor light emitting element and method of manufacturing the same

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TW465130B (en) * 1999-12-03 2001-11-21 Cree Lighting Co Enchanced light extraction through the use of micro-led arrays
US20050224835A1 (en) * 2002-02-04 2005-10-13 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
US20060124917A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Comapany Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission
US20070045609A1 (en) * 2005-06-16 2007-03-01 Cree, Inc. Quantum wells for light conversion
US20070200492A1 (en) * 2006-02-24 2007-08-30 Eastman Kodak Company Top-emitter OLED device structure and method

Also Published As

Publication number Publication date
EP2232591A4 (en) 2013-12-25
WO2009075972A3 (en) 2009-08-20
US20100295075A1 (en) 2010-11-25
JP2011507272A (ja) 2011-03-03
TW200939538A (en) 2009-09-16
CN101897038A (zh) 2010-11-24
WO2009075972A2 (en) 2009-06-18
CN101897038B (zh) 2012-08-29
EP2232591A2 (en) 2010-09-29
KR20100097205A (ko) 2010-09-02

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