JP2011504291A - 制御されたドーピングを含む半導体ナノワイヤ及びその製造方法 - Google Patents
制御されたドーピングを含む半導体ナノワイヤ及びその製造方法 Download PDFInfo
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Abstract
【解決手段】 基板上の触媒粒子が反応器内の半導体材料を含有する反応物質に暴露される。一定の横方向寸法を有する真性半導体ナノワイヤは、十分に低い温度で成長させることで、真性半導体ナノワイヤの側壁上での反応物質の熱分解が抑制される。真性半導体ナノワイヤが所望の長さまで成長すると、半導体ナノワイヤの側壁上での熱分解が可能となるように反応器内の温度が高められ、その後ドーパントが反応物質を含む反応器内に供給される。内側の真性半導体ナノワイヤとドーピング半導体シェルとを有する複合半導体ナノワイヤが形成される。触媒粒子が除去され、その後アニールによってドーパントが複合半導体ナノワイヤの体積中に均一に分散され、その結果、一定の横方向寸法及び実質的に均一なドーピングを有する半導体ナノワイヤが形成される。
【選択図】 図1
Description
基板上に触媒粒子を設けるステップと、
前記触媒粒子を第1の反応物質ガスに第1の温度でさらすことにより前記触媒粒子と前記基板との間に未ドーピング半導体ナノワイヤ(undoped semiconductornanowire)を成長させるステップを含み、前記第1の温度では前記半導体ナノワイヤの側壁上での前記第1の反応物質ガスの熱分解が抑制され、
さらに、前記未ドーピング半導体ナノワイヤを第2の反応物質及びドーパントに第2の温度でさらすことにより、前記第2の反応物質及び前記ドーパントが熱分解によって取り込まれるドーピング半導体材料のシェルを前記未ドーピング半導体ナノワイヤの側壁の周囲に成長させるステップと
を含む方法が提供される。
前記触媒粒子を第1の反応物質ガスに第1の温度でさらすことによって形成される未ドーピング半導体ナノワイヤを含み、前記第1の温度では前記半導体ナノワイヤの側壁上での前記第1の反応物質ガスの熱分解が抑制され、
前記未ドーピング半導体ナノワイヤを第2の反応物質及びドーパントに第2の温度でさらすことによって形成される、前記未ドーピング半導体ナノワイヤの側壁に当接し該側壁を取り囲むドーピング半導体材料のシェルとを含み、前記第2の反応物質及び前記ドーパントは、熱分解によって前記シェルに取り込まれた
構造体が提供される。
Claims (21)
- 半導体ナノワイヤを形成する方法であって、
基板上に触媒粒子を設けるステップと、
前記触媒粒子を第1の反応物質ガスに第1の温度でさらすことにより前記触媒粒子と前記基板との間に未ドーピング半導体ナノワイヤを成長させるステップを含み、前記第1の温度では前記半導体ナノワイヤの側壁上での前記第1の反応物質ガスの熱分解が抑制され、
さらに、前記未ドーピング半導体ナノワイヤを第2の反応物質及びドーパントに第2の温度でさらすことにより、前記第2の反応物質及び前記ドーパントが熱分解によって取り込まれるドーピング半導体材料のシェルを前記未ドーピング半導体ナノワイヤの側壁の周囲に成長させるステップと
を含む方法。 - 前記未ドーピング半導体ナノワイヤは、IV族半導体材料、III‐V化合物半導体材料、II‐VI化合物半導体材料、及びそれらの合金を含む、請求項1に記載の方法。
- 前記ドーピング半導体材料は、IV族半導体材料、III‐V化合物半導体材料、II‐VI化合物半導体材料、及びそれらの合金を含む、請求項1に記載の方法。
- 前記ドーピング半導体材料は、B、Ga、In、P、As、及びSbのうちの少なくとも1つを更に含む、請求項1に記載の方法。
- 前記未ドーピング半導体ナノワイヤは、前記未ドーピング半導体ナノワイヤの全体の長さにわたって実質的に一定の断面領域を有する、請求項1に記載の方法。
- 前記未ドーピング半導体ナノワイヤの横方向寸法は、1nm〜1,000nmである、請求項5に記載の方法。
- 前記未ドーピング半導体ナノワイヤの前記横方向寸法は、30nm未満である、請求項6に記載の方法。
- 前記シェルは、前記シェルの全体の長さにわたって実質的に一定の断面領域を有する、請求項1に記載の方法。
- 前記シェルの厚さは、0.3nm〜10nmである、請求項8に記載の方法。
- 前記シェルのドーピング濃度は、1.0×1018/cm3〜5.0×1021/cm3である、請求項1に記載の方法。
- 前記触媒粒子の横方向寸法は、1nm〜1,000nmである、請求項1に記載の方法。
- 前記触媒粒子の前記横方向寸法は、30nm未満である、請求項11に記載の方法。
- 前記触媒粒子は、Au、Ag、Cu、Pt、Fe、Co、Ni、In、Ta、Ti、Zn、Cd、及びSnのうちの1つを含む、請求項1に記載の方法。
- 前記第1の反応物質は、SiH4、Si2H6、SiH2Cl2、SiHCl3、SiCl4、GeH4、Ge2H6、GeH3Cl、GeH2Cl2、GeHCl3、及びGeCl4のうちの少なくとも1つを含み、前記第1の温度は、350℃〜450℃である、請求項1に記載の方法。
- 前記第2の反応物質は、SiH4、Si2H6、SiH2Cl2、SiHCl3、SiCl4、GeH4、Ge2H6、GeH3Cl、GeH2Cl2、GeHCl3、及びGeCl4のうちの少なくとも1つを含む、請求項1に記載の方法。
- 前記ドーパントは、B2H6、GaH3、GaCl3、Ga2Cl6、PH3、POCl3、AsH3、SbH3、及びSbF3のうちの1つを含む、請求項15に記載の方法。
- 前記第2の温度は、500℃〜1,100℃である、請求項15に記載の方法。
- 前記未ドーピング半導体ナノワイヤ及び前記シェルを600℃〜1,200℃の高温でアニールするステップを更に含み、前記未ドーピング半導体ナノワイヤ及び前記シェルは、前記アニール後実質的に均一なドーピング濃度を有する、請求項1に記載の方法。
- 前記実質的に均一なドーピング濃度は、1.0×1017/cm3〜5.0×1020/cm3であり、前記シェルの体積と前記シェル及び前記未ドーピング半導体ナノワイヤの各体積の合計との比を前記シェルのドーピング濃度に乗じた積である、請求項18に記載の方法。
- 前記シェルのドーピング濃度は、処理チャンバ内のドーパント・ガスの分圧、又は前記ドーパント・ガスの分圧と反応物質の分圧との比によって設定される、請求項1に記載の方法。
- 請求項1に記載の方法によって形成される半導体ナノワイヤ。
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US11/877,016 US7915146B2 (en) | 2007-10-23 | 2007-10-23 | Controlled doping of semiconductor nanowires |
PCT/US2008/077419 WO2009055181A1 (en) | 2007-10-23 | 2008-09-24 | Controlled doping of semiconductor nanowires |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107004727A (zh) * | 2014-11-07 | 2017-08-01 | 索尔伏打电流公司 | 密堆积胶体晶体膜的壳赋能(shell‑enabled)垂直对准和精密组装 |
US10919074B2 (en) | 2016-06-21 | 2021-02-16 | Alignedbio Ab | Method for transferring nanowires from a fluid to a substrate surface |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5066164B2 (ja) * | 2009-12-07 | 2012-11-07 | シャープ株式会社 | 半導体素子の製造方法 |
US8415620B2 (en) * | 2010-01-11 | 2013-04-09 | International Business Machines Corporation | Determining doping type and level in semiconducting nanostructures |
JP2013527831A (ja) * | 2010-05-05 | 2013-07-04 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 新規な前駆体から生成されたナノワイヤおよびその製造方法 |
CN102344147B (zh) * | 2010-08-03 | 2013-10-23 | 同济大学 | 一种氧化硅纳米花的制备方法 |
US8321961B2 (en) * | 2010-10-07 | 2012-11-27 | International Business Machines Corporation | Production scale fabrication method for high resolution AFM tips |
US8940388B2 (en) | 2011-03-02 | 2015-01-27 | Micron Technology, Inc. | Insulative elements |
TWI514566B (zh) * | 2012-09-19 | 2015-12-21 | Univ Nat Chiao Tung | 半導體生物奈米線裝置及其製作方法 |
US10392725B2 (en) * | 2017-09-19 | 2019-08-27 | Frank Asbeck | Method for depositing silicon feedstock material, silicon wafer, solar cell and PV module |
US10541137B2 (en) * | 2018-06-01 | 2020-01-21 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for non line-of-sight doping |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
JP2006140293A (ja) * | 2004-11-11 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体微小構造体及びその製造方法 |
JP2009513368A (ja) * | 2005-09-23 | 2009-04-02 | ナノシス・インコーポレイテッド | ナノ構造体のドーピング方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101887935B (zh) | 2000-08-22 | 2013-09-11 | 哈佛学院董事会 | 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造 |
EP1436841A1 (en) | 2001-05-18 | 2004-07-14 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
EP1634334A1 (en) * | 2003-04-04 | 2006-03-15 | Startskottet 22286 AB | Nanowhiskers with pn junctions and methods of fabricating thereof |
KR20070011550A (ko) | 2004-04-30 | 2007-01-24 | 나노시스, 인크. | 나노와이어 성장 및 획득 시스템 및 방법 |
US7087920B1 (en) | 2005-01-21 | 2006-08-08 | Hewlett-Packard Development Company, L.P. | Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit |
WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
US7338834B2 (en) | 2006-03-17 | 2008-03-04 | Acorn Technologies, Inc. | Strained silicon with elastic edge relaxation |
-
2007
- 2007-10-23 US US11/877,016 patent/US7915146B2/en not_active Expired - Fee Related
-
2008
- 2008-09-24 TW TW097136625A patent/TW200936494A/zh unknown
- 2008-09-24 KR KR1020107009625A patent/KR20100072328A/ko not_active Application Discontinuation
- 2008-09-24 EP EP08842348A patent/EP2212240A4/en not_active Withdrawn
- 2008-09-24 JP JP2010531109A patent/JP5190516B2/ja not_active Expired - Fee Related
- 2008-09-24 WO PCT/US2008/077419 patent/WO2009055181A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
JP2006140293A (ja) * | 2004-11-11 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体微小構造体及びその製造方法 |
JP2009513368A (ja) * | 2005-09-23 | 2009-04-02 | ナノシス・インコーポレイテッド | ナノ構造体のドーピング方法 |
Non-Patent Citations (1)
Title |
---|
JPN6012036174; Lincoln J. Lauhon: 'Epitaxial core-shell and core-multishell nanowire heterostructures' Nature 420巻, 20021107, pp. 57-61 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107004727A (zh) * | 2014-11-07 | 2017-08-01 | 索尔伏打电流公司 | 密堆积胶体晶体膜的壳赋能(shell‑enabled)垂直对准和精密组装 |
JP2017539085A (ja) * | 2014-11-07 | 2017-12-28 | ソル ヴォルテイックス エービーSol Voltaics Ab | シェルで可能にされた垂直整列、および密に詰まったコロイド状結晶膜の精密集合体 |
US10692719B2 (en) | 2014-11-07 | 2020-06-23 | Alignd Systems Ab | Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film |
US10919074B2 (en) | 2016-06-21 | 2021-02-16 | Alignedbio Ab | Method for transferring nanowires from a fluid to a substrate surface |
US11364520B2 (en) | 2016-06-21 | 2022-06-21 | Alignedbio Ab | Method for transferring nanowires from a fluid to a substrate surface |
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WO2009055181A1 (en) | 2009-04-30 |
JP5190516B2 (ja) | 2013-04-24 |
TW200936494A (en) | 2009-09-01 |
US20090102019A1 (en) | 2009-04-23 |
EP2212240A1 (en) | 2010-08-04 |
EP2212240A4 (en) | 2013-02-20 |
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US7915146B2 (en) | 2011-03-29 |
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