JP2011502923A5 - - Google Patents
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- Publication number
- JP2011502923A5 JP2011502923A5 JP2010532073A JP2010532073A JP2011502923A5 JP 2011502923 A5 JP2011502923 A5 JP 2011502923A5 JP 2010532073 A JP2010532073 A JP 2010532073A JP 2010532073 A JP2010532073 A JP 2010532073A JP 2011502923 A5 JP2011502923 A5 JP 2011502923A5
- Authority
- JP
- Japan
- Prior art keywords
- acetonitrile
- layer
- hexane
- solution
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims 48
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 11
- CBWJKNQKWLEEPG-UHFFFAOYSA-N dihydridoborate(1-) Chemical compound [BH2-] CBWJKNQKWLEEPG-UHFFFAOYSA-N 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000002904 solvent Substances 0.000 claims 5
- 230000002194 synthesizing effect Effects 0.000 claims 5
- 238000005406 washing Methods 0.000 claims 5
- 239000000203 mixture Substances 0.000 claims 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims 3
- 230000002378 acidificating effect Effects 0.000 claims 3
- 230000002051 biphasic effect Effects 0.000 claims 3
- 239000003456 ion exchange resin Substances 0.000 claims 3
- 229920003303 ion-exchange polymer Polymers 0.000 claims 3
- 239000012046 mixed solvent Substances 0.000 claims 3
- 239000011541 reaction mixture Substances 0.000 claims 3
- 239000011877 solvent mixture Substances 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 2
- 229920001429 chelating resin Polymers 0.000 claims 2
- 239000013557 residual solvent Substances 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US168507P | 2007-11-02 | 2007-11-02 | |
| US61/001,685 | 2007-11-02 | ||
| PCT/US2008/012470 WO2009058406A1 (en) | 2007-11-02 | 2008-11-03 | Methods of preparing clusterboron |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011502923A JP2011502923A (ja) | 2011-01-27 |
| JP2011502923A5 true JP2011502923A5 (cg-RX-API-DMAC7.html) | 2011-12-15 |
| JP5710975B2 JP5710975B2 (ja) | 2015-04-30 |
Family
ID=40591391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532073A Expired - Fee Related JP5710975B2 (ja) | 2007-11-02 | 2008-11-03 | クラスターボロンの調製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8673251B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2212251B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5710975B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101510914B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN103922359A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009058406A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007027798A2 (en) | 2005-08-30 | 2007-03-08 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| KR20150108947A (ko) * | 2007-11-02 | 2015-09-30 | 세미이큅, 인코포레이티드 | 클러스터붕소를 제조하는 방법 |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8796131B2 (en) | 2009-10-27 | 2014-08-05 | Advanced Technology Materials, Inc. | Ion implantation system and method |
| US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| TWI585042B (zh) | 2010-02-26 | 2017-06-01 | 恩特葛瑞斯股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
| US9598352B2 (en) | 2011-11-18 | 2017-03-21 | The Curators Of The University Of Missouri | Process and device for the production of polyhedral boranes |
| SG11201601015RA (en) | 2013-08-16 | 2016-03-30 | Entegris Inc | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| US11651957B2 (en) | 2015-05-28 | 2023-05-16 | SemiNuclear, Inc. | Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization |
| US9972489B2 (en) * | 2015-05-28 | 2018-05-15 | SemiNuclear, Inc. | Composition and method for making picocrystalline artificial borane atoms |
| RU2744435C2 (ru) * | 2016-11-29 | 2021-03-09 | Семиньюклиар, Инк. | Композиция и способ получения пикокристаллических искусственных атомов борана |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3577679B2 (ja) * | 1995-03-24 | 2004-10-13 | 日本化学工業株式会社 | メソポーラスアルミノシリケートの製造方法 |
| US6086837A (en) * | 1997-04-24 | 2000-07-11 | Bechtel Bwxt Idaho, Llc | Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals |
| US6525224B1 (en) * | 1999-06-08 | 2003-02-25 | Northern Illinois University | Fused polyhedron borane dianion |
| KR100788472B1 (ko) * | 2002-06-26 | 2007-12-24 | 세미이큅, 인코포레이티드 | 이온 소스용 증기 소스 |
| TWI375660B (en) * | 2004-01-22 | 2012-11-01 | Semequip Inc | Isotopically-enriched boranes and methods of preparing them |
| US7524477B2 (en) * | 2004-02-02 | 2009-04-28 | Semequip Inc. | Method of production of B10H102− ammonium salts and methods of production of B18H22 |
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2008
- 2008-11-03 KR KR20107010912A patent/KR101510914B1/ko not_active Expired - Fee Related
- 2008-11-03 EP EP08843579.7A patent/EP2212251B1/en not_active Not-in-force
- 2008-11-03 CN CN201410102721.3A patent/CN103922359A/zh active Pending
- 2008-11-03 US US12/741,201 patent/US8673251B2/en not_active Expired - Fee Related
- 2008-11-03 CN CN200880114580A patent/CN101848863A/zh active Pending
- 2008-11-03 JP JP2010532073A patent/JP5710975B2/ja not_active Expired - Fee Related
- 2008-11-03 WO PCT/US2008/012470 patent/WO2009058406A1/en not_active Ceased