JP2011243815A - 化合物半導体素子及びその製造方法 - Google Patents
化合物半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 150000001875 compounds Chemical class 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 55
- 239000011229 interlayer Substances 0.000 claims abstract description 51
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 239000003353 gold alloy Substances 0.000 claims abstract description 26
- 239000000470 constituent Substances 0.000 claims abstract description 20
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 39
- 238000007254 oxidation reaction Methods 0.000 abstract description 21
- 230000003647 oxidation Effects 0.000 abstract description 20
- 238000000034 method Methods 0.000 description 21
- 239000010931 gold Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 titanium ions Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
【解決手段】化合物半導体素子は、ゲート半導体層10と、カソード半導体層12と、カソード半導体層12上に形成されたAu合金カソード電極14と、ゲート半導体層10上に形成されたAu合金ゲート電極16と、層間絶縁膜18と、カソード電極14及びゲート電極16上のAl配線20と、保護膜22を備える。カソード電極14及びゲート電極16と層間絶縁膜18との界面に、酸化アニール処理により形成され、下地層の構成元素を主成分とする酸化膜15,17を備える。
【選択図】図1
Description
図1に、画像形成装置のプリントヘッドに搭載される自己走査型発光素子アレイ(SLED)を構成する複数の発光素子のうちの任意の発光素子の構成を示す。なお、発光素子は具体的には発光サイリスタであり、複数の発光サイリスタは組(ブロック)を単位として点灯/消灯が制御される。
図2に、Au合金のカソード電極14の拡大図を示す。カソード電極14は、AuGeNi合金からなり、カソード半導体層12上に形成される。カソード電極14の表面周囲には、酸化膜15が形成される。酸化膜15の一部、すなわちAl配線20が形成される部位は酸化膜15が除去されてAl配線20とのオーミックコンタクトが得られる。なお、酸化膜15のこの開口は、後述するように層間絶縁膜18のコンタクトホールを形成する際のエッチング処理時に同時に形成されるものである。
図3に、Au合金のゲート電極16の拡大図を示す。ゲート電極16は、AuSbZn合金からなり、ゲート半導体層10上に形成される。ゲート電極16の表面周囲には、酸化膜17が形成される。酸化膜17の一部、すなわちAl配線20が形成される部位は酸化膜17が除去されてAl配線20とのオーミックコンタクトが得られる。なお、酸化膜17のこの開口も、酸化膜15の開口と同様に層間絶縁膜18のコンタクトホールを形成する際のエッチング処理時に同時に形成されるものである。
図4に、酸化アニール処理したカソード電極14の分析結果を示す。図において、横軸はカソード電極14の表面をスパッタしたときのスパッタ時間(min)であり、カソード電極14の表面からの深さを示す。縦軸は元素濃度(%)を示す。スパッタ時間が短く、カソード電極14の表面近傍では酸素原子Oとともにアルミニウム原子Alの濃度が高い。その後、スパッタ時間が長くなるに従い、酸素原子Oとアルミニウム原子Alの濃度が低下し、金原子Auの濃度が高くなる。このことは、カソード電極14の表面にAlを主成分とする酸化膜が形成されていることを示す。
図7に、本実施形態における発光素子の製造フローチャートを示す。
次に、コンタクトホールが形成された領域に金属配線としてAl配線20を形成する(S105)。また、パッド21を形成する。
以上、本発明の実施形態について説明したが、本発明はこれに限定されるものではなく、種々の変更が可能である。
Claims (5)
- 化合物半導体上に形成された金合金電極と、
前記金合金電極上に形成された層間絶縁膜と、
前記層間絶縁膜に形成されたコンタクトホールを介して前記金合金電極に接続される金属配線と、
前記金合金電極と前記層間絶縁膜との界面に形成された、前記化合物半導体の構成元素を主成分とする酸化膜と、
を備えることを特徴とする化合物半導体素子。 - 前記化合物半導体はAlGaAsであり、
前記酸化膜は、Alを主成分とする酸化膜であることを特徴とする請求項1記載の化合物半導体素子。 - 前記化合物半導体素子はAlGaAsであり、
前記酸化膜は、Gaを主成分とする酸化膜であることを特徴とする請求項1記載の化合物半導体素子。 - 前記化合物半導体はGaAsであり、
前記酸化物は、Gaを主成分とする酸化膜であることを特徴とする請求項1記載の化合物半導体素子。 - 化合物半導体上に金合金電極を形成する工程と、
前記金合金電極を酸化性ガス存在下においてアニール処理することで前記化合物半導体の構成元素を主成分とする酸化膜を前記金合金電極の表面に形成する工程と、
アニール処理された前記金合金電極上に層間絶縁膜を形成する工程と、
前記層間絶縁膜にコンタクトホールを形成するとともに前記酸化膜の一部を除去する工程と、
前記コンタクトホールに金属配線を形成する工程と、
を備えることを特徴とする化合物半導体素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010115918A JP5482441B2 (ja) | 2010-05-20 | 2010-05-20 | 化合物半導体素子の製造方法 |
US12/901,731 US20110284917A1 (en) | 2010-05-20 | 2010-10-11 | Compound semiconductor device and method for manufacturing compound semiconductor device |
KR1020100103917A KR20110128119A (ko) | 2010-05-20 | 2010-10-25 | 화합물 반도체 소자 및 그 제조 방법 |
TW099136443A TWI440176B (zh) | 2010-05-20 | 2010-10-26 | 化合物半導體元件及其製造方法 |
CN201010560427.9A CN102254936B (zh) | 2010-05-20 | 2010-11-18 | 化合物半导体装置以及制造该化合物半导体装置的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010115918A JP5482441B2 (ja) | 2010-05-20 | 2010-05-20 | 化合物半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011243815A true JP2011243815A (ja) | 2011-12-01 |
JP5482441B2 JP5482441B2 (ja) | 2014-05-07 |
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JP2010115918A Active JP5482441B2 (ja) | 2010-05-20 | 2010-05-20 | 化合物半導体素子の製造方法 |
Country Status (5)
Country | Link |
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US (1) | US20110284917A1 (ja) |
JP (1) | JP5482441B2 (ja) |
KR (1) | KR20110128119A (ja) |
CN (1) | CN102254936B (ja) |
TW (1) | TWI440176B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102139681B1 (ko) | 2014-01-29 | 2020-07-30 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법 |
CN109716542B (zh) * | 2016-09-10 | 2023-02-07 | 苏州立琻半导体有限公司 | 半导体器件 |
DE112019007079B4 (de) * | 2019-03-25 | 2023-06-22 | Mitsubishi Electric Corporation | Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung |
CN117177554A (zh) * | 2022-05-23 | 2023-12-05 | 华为技术有限公司 | 电子器件、芯片、电路板和电子设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09167856A (ja) * | 1995-12-15 | 1997-06-24 | Sanken Electric Co Ltd | 化合物半導体素子 |
JPH09283801A (ja) * | 1996-04-10 | 1997-10-31 | Nippon Sheet Glass Co Ltd | 面発光サイリスタおよび自己走査型発光装置 |
JP2007180460A (ja) * | 2005-12-28 | 2007-07-12 | Kyocera Corp | 発光サイリスタ、発光サイリスタを用いた発光装置および画像形成装置 |
JP2008028322A (ja) * | 2006-07-25 | 2008-02-07 | Oki Data Corp | 半導体複合装置、ledプリントヘッド及び画像形成装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11265898A (ja) * | 1998-03-18 | 1999-09-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
EP1450414A3 (en) * | 2003-02-19 | 2008-12-24 | Nichia Corporation | Nitride semiconductor device |
DE112009003719T5 (de) * | 2008-12-10 | 2012-08-16 | Furukawa Electric Co., Ltd., | Halbleiterlaserelement und herstellungsverfahren dafür |
-
2010
- 2010-05-20 JP JP2010115918A patent/JP5482441B2/ja active Active
- 2010-10-11 US US12/901,731 patent/US20110284917A1/en not_active Abandoned
- 2010-10-25 KR KR1020100103917A patent/KR20110128119A/ko not_active Application Discontinuation
- 2010-10-26 TW TW099136443A patent/TWI440176B/zh active
- 2010-11-18 CN CN201010560427.9A patent/CN102254936B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09167856A (ja) * | 1995-12-15 | 1997-06-24 | Sanken Electric Co Ltd | 化合物半導体素子 |
JPH09283801A (ja) * | 1996-04-10 | 1997-10-31 | Nippon Sheet Glass Co Ltd | 面発光サイリスタおよび自己走査型発光装置 |
JP2007180460A (ja) * | 2005-12-28 | 2007-07-12 | Kyocera Corp | 発光サイリスタ、発光サイリスタを用いた発光装置および画像形成装置 |
JP2008028322A (ja) * | 2006-07-25 | 2008-02-07 | Oki Data Corp | 半導体複合装置、ledプリントヘッド及び画像形成装置 |
Also Published As
Publication number | Publication date |
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US20110284917A1 (en) | 2011-11-24 |
CN102254936A (zh) | 2011-11-23 |
JP5482441B2 (ja) | 2014-05-07 |
TW201143087A (en) | 2011-12-01 |
TWI440176B (zh) | 2014-06-01 |
KR20110128119A (ko) | 2011-11-28 |
CN102254936B (zh) | 2015-02-18 |
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