JP2011216914A5 - - Google Patents

Download PDF

Info

Publication number
JP2011216914A5
JP2011216914A5 JP2011164402A JP2011164402A JP2011216914A5 JP 2011216914 A5 JP2011216914 A5 JP 2011216914A5 JP 2011164402 A JP2011164402 A JP 2011164402A JP 2011164402 A JP2011164402 A JP 2011164402A JP 2011216914 A5 JP2011216914 A5 JP 2011216914A5
Authority
JP
Japan
Prior art keywords
group iii
nitride semiconductor
iii nitride
degrees
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011164402A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011216914A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011164402A priority Critical patent/JP2011216914A/ja
Priority claimed from JP2011164402A external-priority patent/JP2011216914A/ja
Publication of JP2011216914A publication Critical patent/JP2011216914A/ja
Publication of JP2011216914A5 publication Critical patent/JP2011216914A5/ja
Pending legal-status Critical Current

Links

JP2011164402A 2011-07-27 2011-07-27 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Pending JP2011216914A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011164402A JP2011216914A (ja) 2011-07-27 2011-07-27 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011164402A JP2011216914A (ja) 2011-07-27 2011-07-27 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2010008414A Division JP4793494B2 (ja) 2010-01-18 2010-01-18 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法

Publications (2)

Publication Number Publication Date
JP2011216914A JP2011216914A (ja) 2011-10-27
JP2011216914A5 true JP2011216914A5 (https=) 2012-12-27

Family

ID=44946271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011164402A Pending JP2011216914A (ja) 2011-07-27 2011-07-27 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Country Status (1)

Country Link
JP (1) JP2011216914A (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4542789B2 (ja) * 2003-01-10 2010-09-15 株式会社東芝 半導体装置の製造装置及びその製造方法
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
JP2008109066A (ja) * 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
JP2009099681A (ja) * 2007-10-15 2009-05-07 Shinko Electric Ind Co Ltd 基板の個片化方法
JP4475357B1 (ja) * 2009-06-17 2010-06-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Similar Documents

Publication Publication Date Title
JP4605193B2 (ja) Ｉｉｉ族窒化物系化合物半導体素子
US8836086B2 (en) Semiconductor light emitting chip and method for processing substrate
CN102341977B (zh) Iii族氮化物半导体激光元件、及制作iii族氮化物半导体激光元件的方法
WO2007126158A1 (ja) 半導体発光素子およびウエハ
JP2010192594A5 (https=)
US20120269220A1 (en) Iii-nitride semiconductor laser device and method for fabricating iii-nitride semiconductor laser device
JP2011513954A5 (https=)
JP2009021349A (ja) 半導体発光素子の製造方法及び半導体発光素子
JP2009117641A (ja) 半導体発光素子
US20120273796A1 (en) High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate
JP2023022627A5 (https=)
JP2009239075A (ja) 発光素子
CN112134143B (zh) 氮化镓基激光器及其制备方法
JP5434573B2 (ja) Ｉｉｉ族窒化物系化合物半導体素子
JP2012124273A (ja) 半導体レーザ素子
JPWO2018020793A1 (ja) 半導体発光素子および半導体発光素子の製造方法
JP2009038293A (ja) 発光装置
JP2009088353A (ja) 発光装置
JP2011216914A5 (https=)
JP2008210992A5 (https=)
JP2012019248A5 (ja) Iii族窒化物半導体レーザ素子
JP2012015555A5 (https=)
JP2012015556A5 (ja) ＧａＮ系半導体レーザ、ＧａＮ系半導体レーザを作製する方法
JP2011211244A5 (https=)
JP2012023402A5 (ja) Iii族窒化物半導体レーザ素子