JP2011216914A - Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 - Google Patents
Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Download PDFInfo
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- JP2011216914A JP2011216914A JP2011164402A JP2011164402A JP2011216914A JP 2011216914 A JP2011216914 A JP 2011216914A JP 2011164402 A JP2011164402 A JP 2011164402A JP 2011164402 A JP2011164402 A JP 2011164402A JP 2011216914 A JP2011216914 A JP 2011216914A
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- nitride semiconductor
- group iii
- iii nitride
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 304
- 150000004767 nitrides Chemical class 0.000 title claims description 201
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 113
- 229910002601 GaN Inorganic materials 0.000 claims description 52
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 50
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011164402A JP2011216914A (ja) | 2011-07-27 | 2011-07-27 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2011164402A JP2011216914A (ja) | 2011-07-27 | 2011-07-27 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010008414A Division JP4793494B2 (ja) | 2010-01-18 | 2010-01-18 | Ｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2011216914A true JP2011216914A (ja) | 2011-10-27 |
| JP2011216914A5 JP2011216914A5 (https=) | 2012-12-27 |
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| JP2011164402A Pending JP2011216914A (ja) | 2011-07-27 | 2011-07-27 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235626A (ja) * | 2003-01-10 | 2004-08-19 | Toshiba Corp | 半導体装置の製造装置及びその製造方法 |
| JP2008109066A (ja) * | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
| JP2008543089A (ja) * | 2005-06-01 | 2008-11-27 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
| JP2009099681A (ja) * | 2007-10-15 | 2009-05-07 | Shinko Electric Ind Co Ltd | 基板の個片化方法 |
| JP4475357B1 (ja) * | 2009-06-17 | 2010-06-09 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
-
2011
- 2011-07-27 JP JP2011164402A patent/JP2011216914A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235626A (ja) * | 2003-01-10 | 2004-08-19 | Toshiba Corp | 半導体装置の製造装置及びその製造方法 |
| JP2008543089A (ja) * | 2005-06-01 | 2008-11-27 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
| JP2008109066A (ja) * | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
| JP2009099681A (ja) * | 2007-10-15 | 2009-05-07 | Shinko Electric Ind Co Ltd | 基板の個片化方法 |
| JP4475357B1 (ja) * | 2009-06-17 | 2010-06-09 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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