JP2011186453A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2011186453A JP2011186453A JP2011027107A JP2011027107A JP2011186453A JP 2011186453 A JP2011186453 A JP 2011186453A JP 2011027107 A JP2011027107 A JP 2011027107A JP 2011027107 A JP2011027107 A JP 2011027107A JP 2011186453 A JP2011186453 A JP 2011186453A
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011027107A JP2011186453A (ja) | 2010-02-12 | 2011-02-10 | 液晶表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010029292 | 2010-02-12 | ||
| JP2010029292 | 2010-02-12 | ||
| JP2011027107A JP2011186453A (ja) | 2010-02-12 | 2011-02-10 | 液晶表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094501A Division JP6117849B2 (ja) | 2010-02-12 | 2015-05-05 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011186453A true JP2011186453A (ja) | 2011-09-22 |
| JP2011186453A5 JP2011186453A5 (enrdf_load_stackoverflow) | 2014-02-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011027107A Withdrawn JP2011186453A (ja) | 2010-02-12 | 2011-02-10 | 液晶表示装置 |
| JP2015094501A Expired - Fee Related JP6117849B2 (ja) | 2010-02-12 | 2015-05-05 | 液晶表示装置 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094501A Expired - Fee Related JP6117849B2 (ja) | 2010-02-12 | 2015-05-05 | 液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP2011186453A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013250458A (ja) * | 2012-06-01 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2018132770A (ja) * | 2012-10-12 | 2018-08-23 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP2020181003A (ja) * | 2019-04-23 | 2020-11-05 | シャープ株式会社 | 液晶表示装置 |
| US11809047B2 (en) | 2015-11-13 | 2023-11-07 | Dai Nippon Printing Co., Ltd. | Light transmission control film and laminated glass |
| JP7629496B2 (ja) | 2015-08-28 | 2025-02-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101959488B1 (ko) * | 2015-09-08 | 2019-03-18 | 주식회사 엘지화학 | 광학 소자의 제조 방법 |
| CN106597759B (zh) * | 2017-02-24 | 2019-06-28 | 京东方科技集团股份有限公司 | 隔垫物、显示基板及其制作方法、显示面板 |
| CN109932843B (zh) * | 2017-12-15 | 2023-09-29 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
| CN115202106A (zh) * | 2022-07-18 | 2022-10-18 | 华映科技（集团）股份有限公司 | 一种彩膜基板及液晶显示面板 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04127128A (ja) * | 1990-09-18 | 1992-04-28 | Sharp Corp | アクティブマトリクス表示装置 |
| JPH04301621A (ja) * | 1991-03-29 | 1992-10-26 | Casio Comput Co Ltd | 液晶表示素子 |
| JPH05158053A (ja) * | 1991-12-05 | 1993-06-25 | Sharp Corp | 液晶表示装置の製造方法 |
| JPH1195194A (ja) * | 1997-09-24 | 1999-04-09 | Toshiba Electronic Engineering Corp | 液晶表示素子およびその製造方法 |
| JP2004069957A (ja) * | 2002-08-06 | 2004-03-04 | Fujitsu Ltd | 液晶表示素子 |
| JP2004295109A (ja) * | 2003-03-07 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
| JP2007232839A (ja) * | 2006-02-28 | 2007-09-13 | Epson Imaging Devices Corp | 液晶装置 |
| JP2009237010A (ja) * | 2008-03-26 | 2009-10-15 | Epson Imaging Devices Corp | 液晶パネル |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006072388A (ja) * | 1995-08-18 | 2006-03-16 | Toshiba Electronic Engineering Corp | 液晶表示素子 |
| JP3255107B2 (ja) * | 1998-02-27 | 2002-02-12 | 東レ株式会社 | カラーフィルター及びこれを用いた液晶表示装置 |
| JP2001242467A (ja) * | 2000-02-29 | 2001-09-07 | Sanyo Electric Co Ltd | 液晶表示装置及びその製造方法 |
| JP2002350863A (ja) * | 2001-05-24 | 2002-12-04 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
| JP2003140159A (ja) * | 2001-11-02 | 2003-05-14 | Sony Corp | 液晶表示素子およびその製造方法 |
| JP5046005B2 (ja) * | 2007-03-29 | 2012-10-10 | 大日本印刷株式会社 | 液晶表示装置用素子の製造方法 |
-
2011
- 2011-02-10 JP JP2011027107A patent/JP2011186453A/ja not_active Withdrawn
-
2015
- 2015-05-05 JP JP2015094501A patent/JP6117849B2/ja not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04127128A (ja) * | 1990-09-18 | 1992-04-28 | Sharp Corp | アクティブマトリクス表示装置 |
| JPH04301621A (ja) * | 1991-03-29 | 1992-10-26 | Casio Comput Co Ltd | 液晶表示素子 |
| JPH05158053A (ja) * | 1991-12-05 | 1993-06-25 | Sharp Corp | 液晶表示装置の製造方法 |
| JPH1195194A (ja) * | 1997-09-24 | 1999-04-09 | Toshiba Electronic Engineering Corp | 液晶表示素子およびその製造方法 |
| JP2004069957A (ja) * | 2002-08-06 | 2004-03-04 | Fujitsu Ltd | 液晶表示素子 |
| JP2004295109A (ja) * | 2003-03-07 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
| JP2007232839A (ja) * | 2006-02-28 | 2007-09-13 | Epson Imaging Devices Corp | 液晶装置 |
| JP2009237010A (ja) * | 2008-03-26 | 2009-10-15 | Epson Imaging Devices Corp | 液晶パネル |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013250458A (ja) * | 2012-06-01 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2018132770A (ja) * | 2012-10-12 | 2018-08-23 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US10401662B2 (en) | 2012-10-12 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and touch panel |
| JP2021103313A (ja) * | 2012-10-12 | 2021-07-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP7629496B2 (ja) | 2015-08-28 | 2025-02-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US11809047B2 (en) | 2015-11-13 | 2023-11-07 | Dai Nippon Printing Co., Ltd. | Light transmission control film and laminated glass |
| JP2020181003A (ja) * | 2019-04-23 | 2020-11-05 | シャープ株式会社 | 液晶表示装置 |
| JP7204573B2 (ja) | 2019-04-23 | 2023-01-16 | シャープ株式会社 | 液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015135530A (ja) | 2015-07-27 |
| JP6117849B2 (ja) | 2017-04-19 |
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