JP2011186424A - 液晶表示装置のアレイ基板及びその製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000003860 storage Methods 0.000 claims abstract description 73
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005137 deposition process Methods 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 238000006722 reduction reaction Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 abstract description 20
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005019 vapor deposition process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 80
- 239000010408 film Substances 0.000 description 33
- 239000010409 thin film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Oxide) Chemical compound 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
【解決手段】複数の第1領域及び第2領域に区分される基板の前記第1領域上にゲート電極が形成される工程と、前記第2領域の基板上に透明導電性物質で具現されるストレージ下部電極が形成される工程と、前記ゲート電極及びストレージ下部電極を含む基板上にゲート絶縁膜が形成される工程と、を含み、前記ゲート絶縁膜は第1から第3ゲート絶縁層の積層構造で具現されることを特徴とする液晶表示装置のアレイ基板製造方法。
【選択図】図1
Description
12 ゲート電極
12’ 接触電極
18 ゲート絶縁膜
18a、18c 第1ゲート絶縁層
18b 第2ゲート絶縁層
30 ストレージ下部電極
42 画素電極
Claims (14)
- 複数の第1領域及び第2領域に区分される基板の前記第1領域上にゲート電極が形成される工程と、
前記第2領域の基板上に透明導電性物質で具現されるストレージ下部電極が形成される工程と、
前記ゲート電極及びストレージ下部電極を含む基板上にゲート絶縁膜が形成される工程と、
を含み、
前記ゲート絶縁膜は第1から第3ゲート絶縁層の積層構造で具現されることを特徴とする液晶表示装置のアレイ基板製造方法。 - 前記ゲート電極と重畳される領域に半導体層が形成される工程と、
前記半導体層の端にそれぞれ電気的に連結されるようにソース及びドレイン電極が形成される工程と、
前記ドレイン電極と電気的に連結され、前記ストレージ下部電極と重畳される領域に画素電極が形成される工程と、
を含むことを特徴とする請求項1記載の液晶表示装置のアレイ基板製造方法。 - 前記第1から第3ゲート絶縁層は、同一の物質で形成され、各層が形成される際に適用される、蒸着率と蒸着工程で使用されるガスの流量とのうち、少なくともいずれかが相異することを特徴とする請求項1記載の液晶表示装置のアレイ基板製造方法。
- 前記第1及び第3ゲート絶縁層に対して同一の蒸着率を適用し、
前記第1及び第3ゲート絶縁層間に具備される第2ゲート絶縁層の蒸着率を、前記第1及び第3ゲート絶縁層に対して適用される蒸着率と異なるように適用して形成することを特徴とする請求項3記載の液晶表示装置のアレイ基板製造方法。 - 前記第1及び第3ゲート絶縁層に適用される蒸着率は、前記第2ゲート絶縁層に適用される蒸着率より小さいことを特徴とする請求項4記載の液晶表示装置のアレイ基板製造方法。
- 前記第1及び第3ゲート絶縁層の蒸着工程で使用されるガスのうち、前記透明導電性物質に具備される酸化物との還元反応を引き起こす還元性反応ガスの流量は、第2ゲート絶縁層の蒸着工程で使用される還元性反応ガスの流量より小さいことを特徴とする請求項3記載の液晶表示装置のアレイ基板製造方法。
- 前記還元性反応ガスは、NH3ガスまたはSiH4ガスであることを特徴とする請求項6記載の液晶表示装置のアレイ基板製造方法。
- 前記ストレージ下部電極と接触する前記第1ゲート絶縁層は、蒸着工程で、SiH4ガスの流量を前記第3ゲート絶縁層の蒸着工程で使用される還元性反応ガスの流量に比べて少なくして蒸着することを特徴とする請求項6記載の液晶表示装置のアレイ基板製造方法。
- 前記ストレージ下部電極及び前記画素電極は、ITO、TO、IZO、ITZOのうちいずれか一つで形成されることを特徴とする請求項2記載の液晶表示装置のアレイ基板製造方法。
- 前記ストレージ下部電極と重畳される領域下部に、前記ゲート電極と同一物質で具現される接触電極が形成される工程をさらに含むことを特徴とする請求項1記載の液晶表示装置のアレイ基板製造方法。
- 複数の第1領域及び第2領域に区分される基板と、
前記第1領域の基板上に形成されたゲート電極と、
前記第2領域の基板上に形成され、透明導電性物質で具現されるストレージ下部電極と、
前記ゲート電極及びストレージ下部電極を含む基板上に形成されたゲート絶縁膜と、
前記ゲート電極と重畳される領域に形成される半導体層と、
前記半導体層の端にそれぞれ電気的に連結されるソース及びドレイン電極と、
前記ドレイン電極と電気的に連結されて前記ストレージ下部電極と重畳される領域に形成される画素電極と、を備え、
前記ゲート絶縁膜は第1から第3ゲート絶縁層の積層構造に具現されることを特徴とする液晶表示装置のアレイ基板。 - 前記第1から第3ゲート絶縁層は、同一の物質で形成され、各層が形成される際に適用される、蒸着率と蒸着工程で使用されるガスの流量とのうち、少なくともいずれかが相異することを特徴とする請求項11記載の液晶表示装置のアレイ基板。
- 前記ストレージ下部電極及び前記画素電極は、ITO、TO、IZO、ITZOのうちいずれか一つで形成されることを特徴とする請求項11記載の液晶表示装置のアレイ基板。
- 前記ストレージ下部電極と重畳される領域下部に、前記ゲート電極と同一物質で具現される接触電極をさらに備えることを特徴とする請求項11記載の液晶表示装置のアレイ基板。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013254950A (ja) * | 2012-05-10 | 2013-12-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
TWI505477B (zh) * | 2013-05-31 | 2015-10-21 | Everdisplay Optronics Shanghai Ltd | 薄膜電晶體及其製造方法和具有該薄膜電晶體的顯示裝置 |
JP2017028311A (ja) * | 2012-05-10 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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CN104205310B (zh) * | 2012-04-06 | 2017-03-01 | 夏普株式会社 | 半导体装置及其制造方法 |
CN102683424B (zh) | 2012-04-28 | 2013-08-07 | 京东方科技集团股份有限公司 | 显示装置、阵列基板、薄膜晶体管及其制作方法 |
CN103839973B (zh) * | 2014-02-24 | 2016-05-04 | 京东方科技集团股份有限公司 | 有源矩阵有机发光二极管阵列基板及制作方法和显示装置 |
CN109616510B (zh) * | 2018-12-03 | 2020-04-14 | 惠科股份有限公司 | 薄膜晶体管结构及其制作方法、显示装置 |
CN113394235B (zh) * | 2021-05-20 | 2022-10-21 | 北海惠科光电技术有限公司 | 阵列基板及阵列基板的制造方法 |
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KR20070071777A (ko) * | 2005-12-30 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
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JP5235363B2 (ja) * | 2007-09-04 | 2013-07-10 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
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2010
- 2010-03-10 KR KR1020100021261A patent/KR101132119B1/ko active IP Right Grant
- 2010-09-07 JP JP2010199910A patent/JP5679164B2/ja not_active Expired - Fee Related
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2011
- 2011-02-24 US US13/034,611 patent/US20110220897A1/en not_active Abandoned
- 2011-03-02 TW TW100106939A patent/TWI475643B/zh not_active IP Right Cessation
- 2011-03-09 CN CN201110059284.8A patent/CN102194742B/zh not_active Expired - Fee Related
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013254950A (ja) * | 2012-05-10 | 2013-12-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2017028311A (ja) * | 2012-05-10 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9711652B2 (en) | 2012-05-10 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9831325B2 (en) | 2012-05-10 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2017228800A (ja) * | 2012-05-10 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9966475B2 (en) | 2012-05-10 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2021016008A (ja) * | 2012-05-10 | 2021-02-12 | 株式会社半導体エネルギー研究所 | トランジスタ |
TWI505477B (zh) * | 2013-05-31 | 2015-10-21 | Everdisplay Optronics Shanghai Ltd | 薄膜電晶體及其製造方法和具有該薄膜電晶體的顯示裝置 |
US9391169B2 (en) | 2013-05-31 | 2016-07-12 | Everdisplay Optronics (Shanghai) Limited | Thin film transistor and manufacturing method thereof and display comprising the same |
Also Published As
Publication number | Publication date |
---|---|
TW201138025A (en) | 2011-11-01 |
CN102194742B (zh) | 2015-11-25 |
TWI475643B (zh) | 2015-03-01 |
KR20110101905A (ko) | 2011-09-16 |
KR101132119B1 (ko) | 2012-04-05 |
JP5679164B2 (ja) | 2015-03-04 |
US20110220897A1 (en) | 2011-09-15 |
CN102194742A (zh) | 2011-09-21 |
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