JP2011138913A - 半導体発光素子とその製造方法 - Google Patents
半導体発光素子とその製造方法 Download PDFInfo
- Publication number
- JP2011138913A JP2011138913A JP2009297736A JP2009297736A JP2011138913A JP 2011138913 A JP2011138913 A JP 2011138913A JP 2009297736 A JP2009297736 A JP 2009297736A JP 2009297736 A JP2009297736 A JP 2009297736A JP 2011138913 A JP2011138913 A JP 2011138913A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bump
- gold
- semiconductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010931 gold Substances 0.000 claims abstract description 68
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052737 gold Inorganic materials 0.000 claims abstract description 38
- 238000009713 electroplating Methods 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 230000005496 eutectics Effects 0.000 abstract description 16
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009297736A JP2011138913A (ja) | 2009-12-28 | 2009-12-28 | 半導体発光素子とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009297736A JP2011138913A (ja) | 2009-12-28 | 2009-12-28 | 半導体発光素子とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011138913A true JP2011138913A (ja) | 2011-07-14 |
| JP2011138913A5 JP2011138913A5 (enExample) | 2012-07-19 |
Family
ID=44350055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009297736A Pending JP2011138913A (ja) | 2009-12-28 | 2009-12-28 | 半導体発光素子とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011138913A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8922008B2 (en) | 2012-05-07 | 2014-12-30 | Samsung Electronics Co., Ltd. | Bump structure, having concave lateral sides, semiconductor package having the bump structure, and method of forming the bump structure |
| JP2016526797A (ja) * | 2013-07-03 | 2016-09-05 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | メタライゼーション層の下に応力緩和層を有するled |
| CN106298719A (zh) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | 金属凸块结构及其形成方法 |
| CN108538998A (zh) * | 2018-03-30 | 2018-09-14 | 扬州乾照光电有限公司 | 一种led芯片及其制作方法 |
| WO2020138278A1 (ja) * | 2018-12-26 | 2020-07-02 | 京セラ株式会社 | 電子部品の接合方法および接合構造体 |
| CN111606301A (zh) * | 2020-04-22 | 2020-09-01 | 诺思(天津)微系统有限责任公司 | 器件结构及封装方法、滤波器、电子设备 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159173A (en) * | 1978-06-07 | 1979-12-15 | Hitachi Ltd | Construction of bump electrode |
| JPS57188848A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Circuit element |
| JPH01166542A (ja) * | 1987-12-22 | 1989-06-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH05315338A (ja) * | 1992-05-06 | 1993-11-26 | Sumitomo Electric Ind Ltd | 半導体チップ |
| JP2002111113A (ja) * | 2000-09-28 | 2002-04-12 | Hitachi Ltd | 光モジュール |
| JP2002190490A (ja) * | 2000-12-20 | 2002-07-05 | Denso Corp | バンプを有する電子部品 |
| JP2007173269A (ja) * | 2005-12-19 | 2007-07-05 | Showa Denko Kk | フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ |
-
2009
- 2009-12-28 JP JP2009297736A patent/JP2011138913A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159173A (en) * | 1978-06-07 | 1979-12-15 | Hitachi Ltd | Construction of bump electrode |
| JPS57188848A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Circuit element |
| JPH01166542A (ja) * | 1987-12-22 | 1989-06-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH05315338A (ja) * | 1992-05-06 | 1993-11-26 | Sumitomo Electric Ind Ltd | 半導体チップ |
| JP2002111113A (ja) * | 2000-09-28 | 2002-04-12 | Hitachi Ltd | 光モジュール |
| JP2002190490A (ja) * | 2000-12-20 | 2002-07-05 | Denso Corp | バンプを有する電子部品 |
| JP2007173269A (ja) * | 2005-12-19 | 2007-07-05 | Showa Denko Kk | フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8922008B2 (en) | 2012-05-07 | 2014-12-30 | Samsung Electronics Co., Ltd. | Bump structure, having concave lateral sides, semiconductor package having the bump structure, and method of forming the bump structure |
| JP2016526797A (ja) * | 2013-07-03 | 2016-09-05 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | メタライゼーション層の下に応力緩和層を有するled |
| CN106298719A (zh) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | 金属凸块结构及其形成方法 |
| CN108538998A (zh) * | 2018-03-30 | 2018-09-14 | 扬州乾照光电有限公司 | 一种led芯片及其制作方法 |
| WO2020138278A1 (ja) * | 2018-12-26 | 2020-07-02 | 京セラ株式会社 | 電子部品の接合方法および接合構造体 |
| CN111606301A (zh) * | 2020-04-22 | 2020-09-01 | 诺思(天津)微系统有限责任公司 | 器件结构及封装方法、滤波器、电子设备 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080136019A1 (en) | Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications | |
| CN100416784C (zh) | 形成无铅凸点互连的方法 | |
| US7179670B2 (en) | Flip-chip light emitting diode device without sub-mount | |
| US7098126B2 (en) | Formation of electroplate solder on an organic circuit board for flip chip joints and board to board solder joints | |
| CN101350381B (zh) | 凸点发光二极管及其制造方法 | |
| US8581285B2 (en) | Semiconductor light-emitting element for flip-chip mounting | |
| CN101740709B (zh) | 光半导体装置及其制造方法 | |
| CN100470779C (zh) | 电子部件搭载用基板和电子部件 | |
| CN108183155B (zh) | 半导体发光器件 | |
| JP2011138913A (ja) | 半導体発光素子とその製造方法 | |
| WO2006098454A1 (ja) | サブマウントおよびその製造方法 | |
| JP2016134497A (ja) | 配線基板積層体及びこれを用いた半導体装置の製造方法 | |
| CN106663732A (zh) | 倒装芯片led封装 | |
| US8399969B2 (en) | Chip package and fabricating method thereof | |
| JP2008028112A (ja) | 半導体装置の製造方法 | |
| JP6702108B2 (ja) | 端子構造、半導体装置、電子装置及び端子の形成方法 | |
| EP1322146A1 (en) | Method of electroplating solder bumps on an organic circuit board | |
| JP2006278463A (ja) | サブマウント | |
| KR100744149B1 (ko) | 은 범프를 이용한 반도체 패키지 구조 및 형성 방법 | |
| JP2009135345A (ja) | 半導体装置及びその製造方法 | |
| JP2014036165A (ja) | 半導体装置 | |
| JP5235796B2 (ja) | 電子部品 | |
| KR100726059B1 (ko) | 플립칩 조인트 및 보드대면형 솔더 조인트를 위한유기회로보드 상의 전기도금 솔더 형성 | |
| JP2009289804A (ja) | 半導体素子の線路面の入出力パッド上に金属バンプを形成する方法 | |
| JP2021158141A (ja) | 半導体装置、配線基板、半導体装置の製造方法、及び配線基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120601 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120601 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130130 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130401 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130806 |