JP2011135084A5 - - Google Patents

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Publication number
JP2011135084A5
JP2011135084A5 JP2010286580A JP2010286580A JP2011135084A5 JP 2011135084 A5 JP2011135084 A5 JP 2011135084A5 JP 2010286580 A JP2010286580 A JP 2010286580A JP 2010286580 A JP2010286580 A JP 2010286580A JP 2011135084 A5 JP2011135084 A5 JP 2011135084A5
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JP
Japan
Prior art keywords
frequency component
film
driven
precursor
deposited
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JP2010286580A
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English (en)
Japanese (ja)
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JP6058876B2 (ja
JP2011135084A (ja
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Priority claimed from GBGB0922647.3A external-priority patent/GB0922647D0/en
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Publication of JP2011135084A5 publication Critical patent/JP2011135084A5/ja
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Publication of JP6058876B2 publication Critical patent/JP6058876B2/ja
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JP2010286580A 2009-12-24 2010-12-22 ＳｉＯ２膜を堆積する方法 Active JP6058876B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0922647.3A GB0922647D0 (en) 2009-12-24 2009-12-24 Methods of depositing SiO² films
GB0922647.3 2009-12-24

Publications (3)

Publication Number Publication Date
JP2011135084A JP2011135084A (ja) 2011-07-07
JP2011135084A5 true JP2011135084A5 (enExample) 2013-04-11
JP6058876B2 JP6058876B2 (ja) 2017-01-11

Family

ID=41716978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010286580A Active JP6058876B2 (ja) 2009-12-24 2010-12-22 ＳｉＯ２膜を堆積する方法

Country Status (6)

Country Link
EP (1) EP2362003B1 (enExample)
JP (1) JP6058876B2 (enExample)
KR (1) KR101472733B1 (enExample)
CN (1) CN102108497B (enExample)
GB (1) GB0922647D0 (enExample)
TW (1) TWI518201B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329575B2 (en) * 2010-12-22 2012-12-11 Applied Materials, Inc. Fabrication of through-silicon vias on silicon wafers
GB201207448D0 (en) 2012-04-26 2012-06-13 Spts Technologies Ltd Method of depositing silicon dioxide films
JP2015029004A (ja) * 2013-07-30 2015-02-12 株式会社アルバック プラズマｃｖｄ装置及び成膜方法
GB201410317D0 (en) * 2014-06-10 2014-07-23 Spts Technologies Ltd Substrate
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
KR101772772B1 (ko) * 2015-12-08 2017-08-29 주식회사 포스코 표면 처리된 기판 및 이의 제조방법
US20180223413A1 (en) * 2015-09-21 2018-08-09 Posco Color-treated substrate and color treatment method therefor
GB201522552D0 (en) * 2015-12-21 2016-02-03 Spts Technologies Ltd Method of improving adhesion
CN106783535A (zh) * 2016-11-28 2017-05-31 武汉新芯集成电路制造有限公司 一种改善peteos薄膜缺陷的方法和半导体结构
CN108018538A (zh) * 2017-11-24 2018-05-11 中航（重庆）微电子有限公司 采用pe-teos工艺制备二氧化硅薄膜的方法及设备
CN111235547B (zh) * 2020-04-27 2020-08-07 上海陛通半导体能源科技股份有限公司 化学气相沉积方法
CN114000123A (zh) * 2021-11-02 2022-02-01 浙江光特科技有限公司 一种制备SiO2薄膜的方法、芯片及装置
CN116479405A (zh) * 2023-06-08 2023-07-25 上海陛通半导体能源科技股份有限公司 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356722A (en) * 1992-06-10 1994-10-18 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
DE19523442A1 (de) * 1995-06-28 1997-01-02 Antec Angewandte Neue Technolo Verfahren zur Beschichtung von Gegenständen aus Metall oder Metall-Legierungen oder entsprechenden Oberflächen
JP2973905B2 (ja) * 1995-12-27 1999-11-08 日本電気株式会社 半導体装置の製造方法
US6028014A (en) * 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
JP3933793B2 (ja) * 1998-06-16 2007-06-20 富士通株式会社 シリコン酸化膜の形成方法及び薄膜磁気ヘッドの製造方法
JP3248492B2 (ja) * 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
JP3184177B2 (ja) * 1999-03-26 2001-07-09 キヤノン販売株式会社 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
JP2005150299A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp 半導体チップ、半導体装置及び半導体装置の製造方法、回路基板及び電子機器
US7888273B1 (en) * 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
JP4985411B2 (ja) * 2008-01-08 2012-07-25 住友電気工業株式会社 半導体光素子を作製する方法

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