TWI518201B - 沉積二氧化矽薄膜的方法 - Google Patents
沉積二氧化矽薄膜的方法 Download PDFInfo
- Publication number
- TWI518201B TWI518201B TW099144743A TW99144743A TWI518201B TW I518201 B TWI518201 B TW I518201B TW 099144743 A TW099144743 A TW 099144743A TW 99144743 A TW99144743 A TW 99144743A TW I518201 B TWI518201 B TW I518201B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- teos
- deposited
- plasma treatment
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 58
- 238000000151 deposition Methods 0.000 title claims description 47
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 80
- 238000009832 plasma treatment Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 31
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 15
- 238000011282 treatment Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 13
- 230000009103 reabsorption Effects 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000009102 absorption Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0922647.3A GB0922647D0 (en) | 2009-12-24 | 2009-12-24 | Methods of depositing SiO² films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201139719A TW201139719A (en) | 2011-11-16 |
| TWI518201B true TWI518201B (zh) | 2016-01-21 |
Family
ID=41716978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099144743A TWI518201B (zh) | 2009-12-24 | 2010-12-20 | 沉積二氧化矽薄膜的方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2362003B1 (enExample) |
| JP (1) | JP6058876B2 (enExample) |
| KR (1) | KR101472733B1 (enExample) |
| CN (1) | CN102108497B (enExample) |
| GB (1) | GB0922647D0 (enExample) |
| TW (1) | TWI518201B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8329575B2 (en) * | 2010-12-22 | 2012-12-11 | Applied Materials, Inc. | Fabrication of through-silicon vias on silicon wafers |
| GB201207448D0 (en) | 2012-04-26 | 2012-06-13 | Spts Technologies Ltd | Method of depositing silicon dioxide films |
| JP2015029004A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社アルバック | プラズマｃｖｄ装置及び成膜方法 |
| GB201410317D0 (en) * | 2014-06-10 | 2014-07-23 | Spts Technologies Ltd | Substrate |
| US9390910B2 (en) * | 2014-10-03 | 2016-07-12 | Applied Materials, Inc. | Gas flow profile modulated control of overlay in plasma CVD films |
| KR101772772B1 (ko) * | 2015-12-08 | 2017-08-29 | 주식회사 포스코 | 표면 처리된 기판 및 이의 제조방법 |
| US20180223413A1 (en) * | 2015-09-21 | 2018-08-09 | Posco | Color-treated substrate and color treatment method therefor |
| GB201522552D0 (en) * | 2015-12-21 | 2016-02-03 | Spts Technologies Ltd | Method of improving adhesion |
| CN106783535A (zh) * | 2016-11-28 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | 一种改善peteos薄膜缺陷的方法和半导体结构 |
| CN108018538A (zh) * | 2017-11-24 | 2018-05-11 | 中航（重庆）微电子有限公司 | 采用pe-teos工艺制备二氧化硅薄膜的方法及设备 |
| CN111235547B (zh) * | 2020-04-27 | 2020-08-07 | 上海陛通半导体能源科技股份有限公司 | 化学气相沉积方法 |
| CN114000123A (zh) * | 2021-11-02 | 2022-02-01 | 浙江光特科技有限公司 | 一种制备SiO2薄膜的方法、芯片及装置 |
| CN116479405A (zh) * | 2023-06-08 | 2023-07-25 | 上海陛通半导体能源科技股份有限公司 | 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356722A (en) * | 1992-06-10 | 1994-10-18 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
| DE19523442A1 (de) * | 1995-06-28 | 1997-01-02 | Antec Angewandte Neue Technolo | Verfahren zur Beschichtung von Gegenständen aus Metall oder Metall-Legierungen oder entsprechenden Oberflächen |
| JP2973905B2 (ja) * | 1995-12-27 | 1999-11-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6028014A (en) * | 1997-11-10 | 2000-02-22 | Lsi Logic Corporation | Plasma-enhanced oxide process optimization and material and apparatus therefor |
| JP3933793B2 (ja) * | 1998-06-16 | 2007-06-20 | 富士通株式会社 | シリコン酸化膜の形成方法及び薄膜磁気ヘッドの製造方法 |
| JP3248492B2 (ja) * | 1998-08-14 | 2002-01-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP3184177B2 (ja) * | 1999-03-26 | 2001-07-09 | キヤノン販売株式会社 | 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置 |
| US7247252B2 (en) * | 2002-06-20 | 2007-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of avoiding plasma arcing during RIE etching |
| JP2005150299A (ja) * | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | 半導体チップ、半導体装置及び半導体装置の製造方法、回路基板及び電子機器 |
| US7888273B1 (en) * | 2006-11-01 | 2011-02-15 | Novellus Systems, Inc. | Density gradient-free gap fill |
| JP4985411B2 (ja) * | 2008-01-08 | 2012-07-25 | 住友電気工業株式会社 | 半導体光素子を作製する方法 |
-
2009
- 2009-12-24 GB GBGB0922647.3A patent/GB0922647D0/en not_active Ceased
-
2010
- 2010-12-20 TW TW099144743A patent/TWI518201B/zh active
- 2010-12-20 EP EP10275131.0A patent/EP2362003B1/en active Active
- 2010-12-22 JP JP2010286580A patent/JP6058876B2/ja active Active
- 2010-12-24 KR KR1020100134279A patent/KR101472733B1/ko active Active
- 2010-12-24 CN CN201010615668.9A patent/CN102108497B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6058876B2 (ja) | 2017-01-11 |
| EP2362003B1 (en) | 2017-07-05 |
| GB0922647D0 (en) | 2010-02-10 |
| EP2362003A3 (en) | 2011-09-07 |
| CN102108497A (zh) | 2011-06-29 |
| TW201139719A (en) | 2011-11-16 |
| JP2011135084A (ja) | 2011-07-07 |
| KR101472733B1 (ko) | 2014-12-15 |
| CN102108497B (zh) | 2015-07-15 |
| KR20110074478A (ko) | 2011-06-30 |
| EP2362003A2 (en) | 2011-08-31 |
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