JP2011100822A5 - - Google Patents
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- Publication number
- JP2011100822A5 JP2011100822A5 JP2009253910A JP2009253910A JP2011100822A5 JP 2011100822 A5 JP2011100822 A5 JP 2011100822A5 JP 2009253910 A JP2009253910 A JP 2009253910A JP 2009253910 A JP2009253910 A JP 2009253910A JP 2011100822 A5 JP2011100822 A5 JP 2011100822A5
- Authority
- JP
- Japan
- Prior art keywords
- processing method
- semiconductor element
- gas
- film
- work function
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 238000003672 processing method Methods 0.000 claims 15
- 238000001312 dry etching Methods 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000000463 material Substances 0.000 claims 5
- 238000001039 wet etching Methods 0.000 claims 5
- 239000000126 substance Substances 0.000 claims 4
- 229910004200 TaSiN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009253910A JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
| TW099100923A TW201117291A (en) | 2009-11-05 | 2010-01-14 | Method for processing semiconductor device |
| US12/694,394 US8501608B2 (en) | 2009-11-05 | 2010-01-27 | Method for processing semiconductor device |
| KR1020100007842A KR101133697B1 (ko) | 2009-11-05 | 2010-01-28 | 반도체소자 가공방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009253910A JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011100822A JP2011100822A (ja) | 2011-05-19 |
| JP2011100822A5 true JP2011100822A5 (https=) | 2013-07-04 |
Family
ID=43925879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009253910A Pending JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8501608B2 (https=) |
| JP (1) | JP2011100822A (https=) |
| KR (1) | KR101133697B1 (https=) |
| TW (1) | TW201117291A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104053626B (zh) * | 2011-10-28 | 2017-06-30 | 意法半导体股份有限公司 | 用于制造针对氢氟酸蚀刻的保护层的方法、设置有该保护层的半导体器件及制造该半导体器件的方法 |
| JP6163446B2 (ja) * | 2014-03-27 | 2017-07-12 | 株式会社東芝 | 半導体装置の製造方法 |
| IT202100022511A1 (it) | 2021-08-30 | 2023-03-02 | St Microelectronics Srl | Procedimento di fabbricazione di un sistema integrato includente un sensore di pressione capacitivo e un sensore inerziale, e sistema integrato |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800326B1 (en) * | 1997-01-14 | 2004-10-05 | Seiko Epson Corporation | Method of treating a surface of a surface of a substrate containing titanium for an ornament |
| US6245684B1 (en) * | 1998-03-13 | 2001-06-12 | Applied Materials, Inc. | Method of obtaining a rounded top trench corner for semiconductor trench etch applications |
| JP2000252259A (ja) | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
| JP4152271B2 (ja) | 2003-07-24 | 2008-09-17 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| WO2005013374A1 (ja) * | 2003-08-05 | 2005-02-10 | Fujitsu Limited | 半導体装置および半導体装置の製造方法 |
| US20050081781A1 (en) * | 2003-10-17 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Fully dry, Si recess free process for removing high k dielectric layer |
| US20050260804A1 (en) * | 2004-05-24 | 2005-11-24 | Tae-Wook Kang | Semiconductor device and method of fabricating the same |
| JP2007115732A (ja) * | 2005-10-18 | 2007-05-10 | Renesas Technology Corp | エッチング液およびそれを用いた半導体装置の製造方法 |
| KR20080018711A (ko) | 2006-08-25 | 2008-02-28 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
| JP5329294B2 (ja) * | 2009-04-30 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2009
- 2009-11-05 JP JP2009253910A patent/JP2011100822A/ja active Pending
-
2010
- 2010-01-14 TW TW099100923A patent/TW201117291A/zh unknown
- 2010-01-27 US US12/694,394 patent/US8501608B2/en not_active Expired - Fee Related
- 2010-01-28 KR KR1020100007842A patent/KR101133697B1/ko not_active Expired - Fee Related
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