JP2011086853A5 - - Google Patents
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- JP2011086853A5 JP2011086853A5 JP2009240213A JP2009240213A JP2011086853A5 JP 2011086853 A5 JP2011086853 A5 JP 2011086853A5 JP 2009240213 A JP2009240213 A JP 2009240213A JP 2009240213 A JP2009240213 A JP 2009240213A JP 2011086853 A5 JP2011086853 A5 JP 2011086853A5
- Authority
- JP
- Japan
- Prior art keywords
- light
- active layer
- wavelength light
- emitted
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004038 photonic crystal Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009240213A JP5300078B2 (ja) | 2009-10-19 | 2009-10-19 | フォトニック結晶発光ダイオード |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009240213A JP5300078B2 (ja) | 2009-10-19 | 2009-10-19 | フォトニック結晶発光ダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011086853A JP2011086853A (ja) | 2011-04-28 |
| JP2011086853A5 true JP2011086853A5 (enExample) | 2012-08-09 |
| JP5300078B2 JP5300078B2 (ja) | 2013-09-25 |
Family
ID=44079574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009240213A Expired - Fee Related JP5300078B2 (ja) | 2009-10-19 | 2009-10-19 | フォトニック結晶発光ダイオード |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5300078B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5315513B2 (ja) | 2011-07-12 | 2013-10-16 | 丸文株式会社 | 発光素子及びその製造方法 |
| WO2015008776A1 (ja) | 2013-07-17 | 2015-01-22 | 丸文株式会社 | 半導体発光素子及び製造方法 |
| KR101648079B1 (ko) | 2014-03-06 | 2016-08-12 | 마루분 가부시키가이샤 | 심자외 led 및 그 제조 방법 |
| KR101848034B1 (ko) | 2015-01-16 | 2018-04-11 | 마루분 가부시키가이샤 | 심자외 led 및 그 제조 방법 |
| KR102056414B1 (ko) | 2015-09-03 | 2020-01-22 | 마루분 가부시키가이샤 | 심자외 led 및 그 제조 방법 |
| EP3425754B1 (en) * | 2016-02-29 | 2021-03-31 | Kyoto University | Heat-radiating light source |
| CN107534072B (zh) | 2016-03-30 | 2019-04-19 | 丸文株式会社 | 深紫外led及其制造方法 |
| US11075322B2 (en) | 2017-02-28 | 2021-07-27 | Osaka University | AlInN film, two-dimensional photonic crystal resonator, method for manufacturing these, and semiconductor light-emitting element |
| JP7316610B6 (ja) | 2018-01-26 | 2024-02-19 | 丸文株式会社 | 深紫外ｌｅｄ及びその製造方法 |
| CN109037267B (zh) * | 2018-06-29 | 2021-09-14 | 天津工业大学 | 金属光子晶体耦合增强nano-LED阵列及制造方法 |
| CN109980058A (zh) * | 2019-02-28 | 2019-07-05 | 江苏大学 | 一种具有空气孔光子晶体结构的高出光效率二极管 |
| US10879217B1 (en) * | 2019-09-11 | 2020-12-29 | Jade Bird Display (shanghai) Limited | Multi-color LED pixel unit and micro-LED display panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037291A (ja) * | 2001-07-25 | 2003-02-07 | Nichia Chem Ind Ltd | 発光素子 |
| KR100674858B1 (ko) * | 2005-07-07 | 2007-01-29 | 삼성전기주식회사 | 백색 발광소자 |
| JP5242975B2 (ja) * | 2007-09-03 | 2013-07-24 | 独立行政法人科学技術振興機構 | 回折格子型発光ダイオード |
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2009
- 2009-10-19 JP JP2009240213A patent/JP5300078B2/ja not_active Expired - Fee Related
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