JP2011054596A - Ｃｃｄイメージセンサ - Google Patents

Ｃｃｄイメージセンサ Download PDF

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Publication number
JP2011054596A
JP2011054596A JP2009199389A JP2009199389A JP2011054596A JP 2011054596 A JP2011054596 A JP 2011054596A JP 2009199389 A JP2009199389 A JP 2009199389A JP 2009199389 A JP2009199389 A JP 2009199389A JP 2011054596 A JP2011054596 A JP 2011054596A
Authority
JP
Japan
Prior art keywords
image sensor
ccd image
pixel
transfer gate
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009199389A
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English (en)
Japanese (ja)
Other versions
JP2011054596A5 (https=
Inventor
Noboru Takatsuka
昇 高塚
Sei Kamimura
聖 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009199389A priority Critical patent/JP2011054596A/ja
Priority to US12/848,503 priority patent/US8259207B2/en
Publication of JP2011054596A publication Critical patent/JP2011054596A/ja
Publication of JP2011054596A5 publication Critical patent/JP2011054596A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009199389A 2009-08-31 2009-08-31 Ｃｃｄイメージセンサ Pending JP2011054596A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009199389A JP2011054596A (ja) 2009-08-31 2009-08-31 Ｃｃｄイメージセンサ
US12/848,503 US8259207B2 (en) 2009-08-31 2010-08-02 CCD image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009199389A JP2011054596A (ja) 2009-08-31 2009-08-31 Ｃｃｄイメージセンサ

Publications (2)

Publication Number Publication Date
JP2011054596A true JP2011054596A (ja) 2011-03-17
JP2011054596A5 JP2011054596A5 (https=) 2012-04-05

Family

ID=43624368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009199389A Pending JP2011054596A (ja) 2009-08-31 2009-08-31 Ｃｃｄイメージセンサ

Country Status (2)

Country Link
US (1) US8259207B2 (https=)
JP (1) JP2011054596A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014525673A (ja) * 2011-08-26 2014-09-29 イー・２・ブイ・セミコンダクターズ ピクセル・グループ化イメージ・センサー
JP2019046995A (ja) * 2017-09-04 2019-03-22 浜松ホトニクス株式会社 固体撮像装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175610A (ja) * 2012-02-27 2013-09-05 Toshiba Corp 固体撮像素子
JP6348272B2 (ja) * 2013-11-05 2018-06-27 浜松ホトニクス株式会社 電荷結合素子及びその製造方法、並びに固体撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283666A (ja) * 1992-03-30 1993-10-29 Sony Corp 固体撮像素子
JPH05347401A (ja) * 1992-06-15 1993-12-27 Matsushita Electron Corp 固体撮像素子
JP2002231926A (ja) * 2001-02-01 2002-08-16 Fuji Photo Film Co Ltd ラインセンサおよびそれを用いた放射線画像情報読取装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212176A (ja) * 1982-06-02 1983-12-09 Nec Corp 電荷転送装置
KR930011473B1 (ko) * 1990-10-16 1993-12-08 삼성전자 주식회사 좁은 채널효과를 가지는 의사이상 전하 결합소자
JPH05283670A (ja) 1992-04-03 1993-10-29 Sony Corp 固体撮像素子及び固体撮像素子の電荷読出し方法
KR0136934B1 (ko) 1994-02-23 1998-04-24 문정환 선형 고체영상소자
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
US6646682B1 (en) * 1998-12-18 2003-11-11 Syscan (Shenzhen) Technology Co., Limited Linear tri-color image sensors
JP4258875B2 (ja) 1999-02-15 2009-04-30 株式会社ニコン 光電変換素子及び光電変換装置
JP3928840B2 (ja) * 2001-02-01 2007-06-13 富士フイルム株式会社 固体撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283666A (ja) * 1992-03-30 1993-10-29 Sony Corp 固体撮像素子
JPH05347401A (ja) * 1992-06-15 1993-12-27 Matsushita Electron Corp 固体撮像素子
JP2002231926A (ja) * 2001-02-01 2002-08-16 Fuji Photo Film Co Ltd ラインセンサおよびそれを用いた放射線画像情報読取装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014525673A (ja) * 2011-08-26 2014-09-29 イー・２・ブイ・セミコンダクターズ ピクセル・グループ化イメージ・センサー
JP2019046995A (ja) * 2017-09-04 2019-03-22 浜松ホトニクス株式会社 固体撮像装置
US11942506B2 (en) 2017-09-04 2024-03-26 Hamamatsu Photonics K.K. Solid state imaging device

Also Published As

Publication number Publication date
US20110050971A1 (en) 2011-03-03
US8259207B2 (en) 2012-09-04

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