JP2011049598A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2011049598A
JP2011049598A JP2010267184A JP2010267184A JP2011049598A JP 2011049598 A JP2011049598 A JP 2011049598A JP 2010267184 A JP2010267184 A JP 2010267184A JP 2010267184 A JP2010267184 A JP 2010267184A JP 2011049598 A JP2011049598 A JP 2011049598A
Authority
JP
Japan
Prior art keywords
dummy patterns
length
dummy
pattern
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010267184A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011049598A5 (enExample
Inventor
Hiroyasu Yoshimune
弘安 能宗
Hiroki Shinkawata
裕樹 新川田
Shinya Soeda
真也 添田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2010267184A priority Critical patent/JP2011049598A/ja
Publication of JP2011049598A publication Critical patent/JP2011049598A/ja
Publication of JP2011049598A5 publication Critical patent/JP2011049598A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2010267184A 2010-11-30 2010-11-30 半導体装置及びその製造方法 Pending JP2011049598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010267184A JP2011049598A (ja) 2010-11-30 2010-11-30 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010267184A JP2011049598A (ja) 2010-11-30 2010-11-30 半導体装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP33843799A Division JP4703807B2 (ja) 1999-11-29 1999-11-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2011049598A true JP2011049598A (ja) 2011-03-10
JP2011049598A5 JP2011049598A5 (enExample) 2011-04-21

Family

ID=43835550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010267184A Pending JP2011049598A (ja) 2010-11-30 2010-11-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2011049598A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111259613A (zh) * 2018-11-14 2020-06-09 华邦电子股份有限公司 电子装置及集成电路的布局方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661230A (ja) * 1992-05-28 1994-03-04 Nec Corp 半導体集積回路装置
JPH08306771A (ja) * 1995-04-27 1996-11-22 Yamaha Corp 半導体装置とその製造方法
JP2000114258A (ja) * 1998-09-29 2000-04-21 Toshiba Corp 半導体装置
JP4703807B2 (ja) * 1999-11-29 2011-06-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661230A (ja) * 1992-05-28 1994-03-04 Nec Corp 半導体集積回路装置
JPH08306771A (ja) * 1995-04-27 1996-11-22 Yamaha Corp 半導体装置とその製造方法
JP2000114258A (ja) * 1998-09-29 2000-04-21 Toshiba Corp 半導体装置
JP4703807B2 (ja) * 1999-11-29 2011-06-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111259613A (zh) * 2018-11-14 2020-06-09 华邦电子股份有限公司 电子装置及集成电路的布局方法
CN111259613B (zh) * 2018-11-14 2023-08-15 华邦电子股份有限公司 电子装置及集成电路的布局方法

Similar Documents

Publication Publication Date Title
CN110223982B (zh) 动态随机存取存储器及其制作方法
CN110581103B (zh) 半导体元件及其制作方法
CN110634869B (zh) 存储器阵列及其制造方法
US8691680B2 (en) Method for fabricating memory device with buried digit lines and buried word lines
KR101186038B1 (ko) 반도체 소자의 제조 방법
CN110707085B (zh) 半导体装置及其形成方法
TWI565002B (zh) 具有用於嵌入式動態隨機存取記憶體之積成雙壁電容器的半導體結構及其形成方法
US8716777B2 (en) Semiconductor device and method for manufacturing the same
CN108231769B (zh) 半导体元件及其制作方法
US6960808B2 (en) Semiconductor device having a lower parasitic capacitance
CN108573971B (zh) 半导体存储器结构
US9601588B2 (en) Method for fabricating semiconductor device
US11610611B2 (en) Dynamic random access memory and method for manufacturing the dram having a bottom surface of a bit line contact structure higher than a top surface of a dielectric layer formed on a buried word line
US11830567B2 (en) Integrated circuit device
TW201947707A (zh) 記憶體裝置及其製造方法
TWI455250B (zh) 動態隨機存取記憶體低寄生電容接觸層及閘極結構及其製程
CN111640750A (zh) 存储器及其形成方法
JP4703807B2 (ja) 半導体装置及びその製造方法
US8148250B2 (en) Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug
US20240284664A1 (en) Semiconductor device
KR20120126433A (ko) 반도체 소자 및 그 제조 방법
CN108615732B (zh) 半导体元件及其制作方法
US20150214234A1 (en) Semiconductor device and method for fabricating the same
TW201322255A (zh) 動態隨機存取記憶體結構及其製作方法
CN110246841A (zh) 半导体元件及其制作方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130903