JP2011044663A - 加熱処理装置 - Google Patents
加熱処理装置 Download PDFInfo
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- JP2011044663A JP2011044663A JP2009193386A JP2009193386A JP2011044663A JP 2011044663 A JP2011044663 A JP 2011044663A JP 2009193386 A JP2009193386 A JP 2009193386A JP 2009193386 A JP2009193386 A JP 2009193386A JP 2011044663 A JP2011044663 A JP 2011044663A
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- cooling gas
- temperature
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- cooling
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 113
- 239000000112 cooling gas Substances 0.000 claims abstract description 153
- 238000012545 processing Methods 0.000 claims abstract description 81
- 238000001816 cooling Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000011282 treatment Methods 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 101
- 230000008569 process Effects 0.000 description 87
- 239000010410 layer Substances 0.000 description 79
- 239000007789 gas Substances 0.000 description 58
- 238000012986 modification Methods 0.000 description 34
- 230000004048 modification Effects 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 21
- 239000012530 fluid Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
Abstract
【解決手段】基板Wを載置し加熱する熱板50と、熱板50上に載置された基板Wを覆い処理室41を形成する蓋体60と、蓋体60の温度を計測する温度センサ100とを有する。蓋体60は、上面と下面との間に形成された空間層74、75を有し、蓋体60を冷却するときに、空間層74、75に冷却用気体を通流させて、温度センサ100の出力信号に基づいて、冷却用気体の流量を制御する。
【選択図】図3
Description
(第1の実施の形態)
始めに、図1から図5を参照し、第1の実施の形態に係る加熱処理装置について説明する。
(第1の実施の形態の第1の変形例)
次に、図6及び図7を参照し、第1の実施の形態の第1の変形例に係る加熱処理装置について説明する。
(第1の実施の形態の第2の変形例)
次に、図8を参照し、第1の実施の形態の第2の変形例に係る加熱処理装置について説明する。図8は、本変形例に係る加熱処理装置の構成を示す概略縦断面図である。
(第2の実施の形態)
次に、図9及び図10を参照し、第2の実施の形態に係る加熱処理装置について説明する。
(第2の実施の形態の変形例)
次に、図11及び図12を参照し、第2の実施の形態の変形例に係る加熱処理装置について説明する。
(第3の実施の形態)
次に、図13及び図14を参照し、第3の実施の形態に係る加熱処理装置について説明する。
16 主搬送装置
41、41a〜41e 加熱処理装置(処理室)
50 熱板
60 蓋体
71 第2の空間層
74 上面側空間層(第1の空間層)
75 下面側空間層(第1の空間層)
76 仕切板
80、80c、80d 冷却用気体供給系
85、98、112 開閉バルブ
85d、98a 調整バルブ
90、90c 冷却用気体排出系
92 冷却用気体排出部(エジェクタ)
100 温度センサ
101、101a、101c、101d、101e 制御部
Claims (7)
- 基板の表面に塗布膜が形成された基板を処理室内で加熱処理する加熱処理装置において、
基板を載置し加熱する熱板と、
前記熱板上に載置された前記基板を覆い前記処理室を形成する蓋体と、
前記蓋体の温度を計測する温度センサと
を有し、
前記蓋体は、上面と下面との間に形成された空間層を有し、
前記蓋体を冷却するときに、
前記空間層に冷却用気体を通流させて、前記温度センサの出力信号に基づいて、前記冷却用気体の流量を制御することを特徴とする加熱処理装置。 - 前記空間層から前記冷却用気体を排出する排出部を有し、
前記温度センサの出力信号に基づいて、前記排出部からの前記冷却用気体の排出量を制御することを特徴とする請求項1に記載の加熱処理装置。 - 前記排出部からの前記冷却用気体の排出量をオンオフ制御することを特徴とする請求項2に記載の加熱処理装置。
- 前記排出部は、エジェクタを有することを特徴とする請求項2又は請求項3に記載の加熱処理装置。
- 前記空間層は、複数層であることを特徴とする請求項1から請求項4のいずれかに記載の加熱処理装置。
- 前記空間層に前記冷却用気体を供給する供給部を有し、
前記温度センサの出力信号に基づいて、前記供給部からの前記冷却用気体の供給量を制御することを特徴とする請求項1から請求項5のいずれかに記載の加熱処理装置。 - 前記蓋体は、前記上面と前記下面との間に形成された第2の空間層を有し、
前記第2の空間層は、前記処理室の内部と外部とを連通し、
前記第2の空間層に第2の冷却用気体を通流させて、前記温度センサの出力信号に基づいて、前記第2の冷却用気体の流量を制御することを特徴とする請求項1から請求項6のいずれかに記載の加熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009193386A JP5107318B2 (ja) | 2009-08-24 | 2009-08-24 | 加熱処理装置 |
KR1020100078229A KR101578670B1 (ko) | 2009-08-24 | 2010-08-13 | 가열 처리 장치 및 가열 처리 장치의 냉각 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009193386A JP5107318B2 (ja) | 2009-08-24 | 2009-08-24 | 加熱処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011044663A true JP2011044663A (ja) | 2011-03-03 |
JP5107318B2 JP5107318B2 (ja) | 2012-12-26 |
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JP2009193386A Active JP5107318B2 (ja) | 2009-08-24 | 2009-08-24 | 加熱処理装置 |
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JP (1) | JP5107318B2 (ja) |
KR (1) | KR101578670B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019225319A1 (ja) * | 2018-05-21 | 2019-11-28 | 東京エレクトロン株式会社 | 基板処理装置 |
CN111430267A (zh) * | 2019-01-09 | 2020-07-17 | 东京毅力科创株式会社 | 热板的冷却方法和加热处理装置 |
JP2022189772A (ja) * | 2021-06-11 | 2022-12-22 | セメス カンパニー,リミテッド | 基板処理装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5856890B2 (ja) * | 2012-03-29 | 2016-02-10 | 株式会社Screenホールディングス | 熱処理装置 |
KR101948084B1 (ko) | 2018-12-04 | 2019-02-14 | 홍석진 | 반도체 웨이퍼 제조용 온도편차 유량 제어 시스템 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822973A (ja) * | 1994-07-05 | 1996-01-23 | Hitachi Ltd | 加熱処理装置の筐体構造 |
JPH094953A (ja) * | 1995-06-21 | 1997-01-10 | Dainippon Screen Mfg Co Ltd | 基板冷却装置 |
JP2002228375A (ja) * | 2001-01-26 | 2002-08-14 | Tokyo Electron Ltd | 加熱処理装置 |
JP2004304104A (ja) * | 2003-04-01 | 2004-10-28 | Tokyo Electron Ltd | 熱処理装置および熱処理装置内温度制御方法 |
-
2009
- 2009-08-24 JP JP2009193386A patent/JP5107318B2/ja active Active
-
2010
- 2010-08-13 KR KR1020100078229A patent/KR101578670B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822973A (ja) * | 1994-07-05 | 1996-01-23 | Hitachi Ltd | 加熱処理装置の筐体構造 |
JPH094953A (ja) * | 1995-06-21 | 1997-01-10 | Dainippon Screen Mfg Co Ltd | 基板冷却装置 |
JP2002228375A (ja) * | 2001-01-26 | 2002-08-14 | Tokyo Electron Ltd | 加熱処理装置 |
JP2004304104A (ja) * | 2003-04-01 | 2004-10-28 | Tokyo Electron Ltd | 熱処理装置および熱処理装置内温度制御方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019225319A1 (ja) * | 2018-05-21 | 2019-11-28 | 東京エレクトロン株式会社 | 基板処理装置 |
JPWO2019225319A1 (ja) * | 2018-05-21 | 2021-05-27 | 東京エレクトロン株式会社 | 基板処理装置 |
CN111430267A (zh) * | 2019-01-09 | 2020-07-17 | 东京毅力科创株式会社 | 热板的冷却方法和加热处理装置 |
CN111430267B (zh) * | 2019-01-09 | 2024-04-19 | 东京毅力科创株式会社 | 热板的冷却方法和加热处理装置 |
JP2022189772A (ja) * | 2021-06-11 | 2022-12-22 | セメス カンパニー,リミテッド | 基板処理装置 |
JP7377916B2 (ja) | 2021-06-11 | 2023-11-10 | セメス カンパニー,リミテッド | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5107318B2 (ja) | 2012-12-26 |
KR101578670B1 (ko) | 2015-12-18 |
KR20110020734A (ko) | 2011-03-03 |
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