JP2011032154A5 - - Google Patents

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Publication number
JP2011032154A5
JP2011032154A5 JP2010033955A JP2010033955A JP2011032154A5 JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5 JP 2010033955 A JP2010033955 A JP 2010033955A JP 2010033955 A JP2010033955 A JP 2010033955A JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5
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JP
Japan
Prior art keywords
crystal
ammonothermal method
nitride
nitride crystal
ammonia
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Application number
JP2010033955A
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English (en)
Japanese (ja)
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JP2011032154A (ja
JP5709122B2 (ja
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Priority claimed from JP2010033955A external-priority patent/JP5709122B2/ja
Publication of JP2011032154A publication Critical patent/JP2011032154A/ja
Publication of JP2011032154A5 publication Critical patent/JP2011032154A5/ja
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JP2010033955A 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶 Active JP5709122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010033955A JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009037352 2009-02-20
JP2009037352 2009-02-20
JP2010033955A JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Publications (3)

Publication Number Publication Date
JP2011032154A JP2011032154A (ja) 2011-02-17
JP2011032154A5 true JP2011032154A5 (enrdf_load_stackoverflow) 2013-04-04
JP5709122B2 JP5709122B2 (ja) 2015-04-30

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JP2010033955A Active JP5709122B2 (ja) 2009-02-20 2010-02-18 アモノサーマル法および窒化物結晶

Country Status (1)

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JP (1) JP5709122B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140010134A (ko) * 2011-03-22 2014-01-23 미쓰비시 가가꾸 가부시키가이샤 질화물 결정의 제조 방법
JP5953943B2 (ja) * 2011-05-31 2016-07-20 三菱化学株式会社 窒化物半導体結晶の製造方法、反応容器および部材
JP6074959B2 (ja) * 2011-09-08 2017-02-08 三菱化学株式会社 Ｉｉｉ族窒化物結晶及びその製造方法
WO2013062042A1 (ja) 2011-10-28 2013-05-02 三菱化学株式会社 窒化物結晶の製造方法および窒化物結晶
JP2014062023A (ja) * 2011-10-28 2014-04-10 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
US9976229B2 (en) 2012-03-29 2018-05-22 Mitsubishi Chemical Corporation Method for producing nitride single crystal
JP6192956B2 (ja) * 2012-03-29 2017-09-06 国立大学法人東北大学 窒化物単結晶の製造方法
JP6024335B2 (ja) * 2012-09-21 2016-11-16 三菱化学株式会社 周期表第１３属金属窒化物半導体基板の製造方法
JP5929807B2 (ja) * 2013-03-26 2016-06-08 三菱化学株式会社 ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229624B2 (ja) * 2002-03-19 2009-02-25 三菱化学株式会社 窒化物単結晶の製造方法
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
PL1769105T3 (pl) * 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
JP2007169075A (ja) * 2005-12-19 2007-07-05 Nippon Kasei Chem Co Ltd 窒化物含有成型体及び単結晶窒化物の製造方法
JP5066639B2 (ja) * 2006-10-16 2012-11-07 三菱化学株式会社 窒化物半導体の製造方法、窒化物単結晶、ウエハ及びデバイス
WO2008051589A2 (en) * 2006-10-25 2008-05-02 The Regents Of The University Of California Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby

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