JP2011032154A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011032154A5 JP2011032154A5 JP2010033955A JP2010033955A JP2011032154A5 JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5 JP 2010033955 A JP2010033955 A JP 2010033955A JP 2010033955 A JP2010033955 A JP 2010033955A JP 2011032154 A5 JP2011032154 A5 JP 2011032154A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- ammonothermal method
- nitride
- nitride crystal
- ammonia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 25
- 150000004767 nitrides Chemical class 0.000 claims 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 10
- 229910021529 ammonia Inorganic materials 0.000 claims 5
- 229910002601 GaN Inorganic materials 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 4
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims 2
- 229940107816 ammonium iodide Drugs 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- KNVXMBKPERUFEN-UHFFFAOYSA-N azane;hydroiodide Chemical compound N.N.I KNVXMBKPERUFEN-UHFFFAOYSA-N 0.000 claims 1
- PBGKVJXGTXXFLO-UHFFFAOYSA-N azanium azane bromide Chemical compound N.[NH4+].[Br-] PBGKVJXGTXXFLO-UHFFFAOYSA-N 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010033955A JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009037352 | 2009-02-20 | ||
| JP2009037352 | 2009-02-20 | ||
| JP2010033955A JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011032154A JP2011032154A (ja) | 2011-02-17 |
| JP2011032154A5 true JP2011032154A5 (OSRAM) | 2013-04-04 |
| JP5709122B2 JP5709122B2 (ja) | 2015-04-30 |
Family
ID=43761600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010033955A Active JP5709122B2 (ja) | 2009-02-20 | 2010-02-18 | アモノサーマル法および窒化物結晶 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5709122B2 (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140010134A (ko) * | 2011-03-22 | 2014-01-23 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 결정의 제조 방법 |
| JP5953943B2 (ja) * | 2011-05-31 | 2016-07-20 | 三菱化学株式会社 | 窒化物半導体結晶の製造方法、反応容器および部材 |
| JP6074959B2 (ja) * | 2011-09-08 | 2017-02-08 | 三菱化学株式会社 | Ｉｉｉ族窒化物結晶及びその製造方法 |
| EP2772570A4 (en) | 2011-10-28 | 2015-03-04 | Mitsubishi Chem Corp | METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL |
| JP2014062023A (ja) * | 2011-10-28 | 2014-04-10 | Mitsubishi Chemicals Corp | 窒化物結晶の製造方法 |
| US9976229B2 (en) | 2012-03-29 | 2018-05-22 | Mitsubishi Chemical Corporation | Method for producing nitride single crystal |
| JP6192956B2 (ja) * | 2012-03-29 | 2017-09-06 | 国立大学法人東北大学 | 窒化物単結晶の製造方法 |
| JP6024335B2 (ja) * | 2012-09-21 | 2016-11-16 | 三菱化学株式会社 | 周期表第１３属金属窒化物半導体基板の製造方法 |
| JP5929807B2 (ja) * | 2013-03-26 | 2016-06-08 | 三菱化学株式会社 | ＧａＮ多結晶およびそれを用いたＧａＮ単結晶の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4229624B2 (ja) * | 2002-03-19 | 2009-02-25 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
| US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
| US8398767B2 (en) * | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
| JP2007169075A (ja) * | 2005-12-19 | 2007-07-05 | Nippon Kasei Chem Co Ltd | 窒化物含有成型体及び単結晶窒化物の製造方法 |
| US7803344B2 (en) * | 2006-10-25 | 2010-09-28 | The Regents Of The University Of California | Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby |
| JP5066639B2 (ja) * | 2006-10-16 | 2012-11-07 | 三菱化学株式会社 | 窒化物半導体の製造方法、窒化物単結晶、ウエハ及びデバイス |
-
2010
- 2010-02-18 JP JP2010033955A patent/JP5709122B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011032154A5 (OSRAM) | ||
| JP2014090169A5 (OSRAM) | ||
| JP2013212952A5 (OSRAM) | ||
| JP2011063504A5 (OSRAM) | ||
| JP2013103863A5 (ja) | β−Ｇａ２Ｏ３単結晶及びその製造方法 | |
| WO2009039398A8 (en) | Gallium nitride bulk crystals and their growth method | |
| RU2008152451A (ru) | Кристалл sic диаметром 100 мм и способ его выращивания на внеосевой затравке | |
| EP2264223A3 (en) | Micropipe-free silicon carbide and related method of manufacture | |
| JP4811354B2 (ja) | ＳｉＣ単結晶の製造方法 | |
| JP2016056088A5 (OSRAM) | ||
| JP2010215506A5 (ja) | 単結晶ｉｉｉ−ｖ族窒化物材料とその製造方法、物品およびウエハ | |
| GB2535418A (en) | Semiconductor nanowire fabrication | |
| JP2014111527A5 (OSRAM) | ||
| JP2013155108A5 (OSRAM) | ||
| WO2010129718A3 (en) | Method and reactor for growing gallium nitride crystals using ammonia and hydrogen chloride | |
| GB201318578D0 (en) | Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates | |
| TW200427879A (en) | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride | |
| WO2008087791A1 (ja) | Ｉｉｉ族窒化物結晶の製造方法、ｉｉｉ族窒化物結晶基板およびｉｉｉ族窒化物半導体デバイス | |
| JP2012515079A5 (OSRAM) | ||
| JP2011135051A5 (OSRAM) | ||
| CN105525350A (zh) | 一种生长大尺寸低缺陷碳化硅单晶和晶片的方法 | |
| EP4403677A3 (en) | Sic seed crystal and method for producing same, sic ingot produced by growing said sic seed crystal and method for producing same, and sic wafer produced from said sic ingot and sic wafer with epitaxial film and methods respectively for producing said sic wafer and said sic wafer with epitaxial film | |
| JP2014181178A5 (OSRAM) | ||
| JP2008290919A5 (OSRAM) | ||
| EP2570521A3 (en) | Manufacturing method of group 13 nitride crystal |